JPS6011501U - Signal-to-noise ratio improvement element - Google Patents

Signal-to-noise ratio improvement element

Info

Publication number
JPS6011501U
JPS6011501U JP10142483U JP10142483U JPS6011501U JP S6011501 U JPS6011501 U JP S6011501U JP 10142483 U JP10142483 U JP 10142483U JP 10142483 U JP10142483 U JP 10142483U JP S6011501 U JPS6011501 U JP S6011501U
Authority
JP
Japan
Prior art keywords
noise ratio
signal
microstrip lines
ratio improvement
improvement element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10142483U
Other languages
Japanese (ja)
Inventor
修三 和高
幸一郎 三須
武田 文雄
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP10142483U priority Critical patent/JPS6011501U/en
Publication of JPS6011501U publication Critical patent/JPS6011501U/en
Pending legal-status Critical Current

Links

Landscapes

  • Waveguide Connection Structure (AREA)
  • Waveguides (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、従来の信号対雑音比改善素子を示す図、第2
図は、この考案に係る信号対雑音比改善素子の一実施例
を示す図である。 図中、1は誘電体基板、2はマイクロストリップ線路、
3は側面、4は静磁波伝ばん媒体、5はマイクロストリ
ップ線路2の端、6はダミーである。なお、図中、同一
あるいは相当部分には同一符号を付して示しである。
Figure 1 shows a conventional signal-to-noise ratio improvement element, Figure 2 shows a conventional signal-to-noise ratio improvement element;
The figure is a diagram showing an embodiment of the signal-to-noise ratio improving element according to the invention. In the figure, 1 is a dielectric substrate, 2 is a microstrip line,
3 is a side surface, 4 is a magnetostatic wave propagation medium, 5 is an end of the microstrip line 2, and 6 is a dummy. In the drawings, the same or corresponding parts are designated by the same reference numerals.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 誘電体基板上に、複数本のマイクロストリップ線路を形
成し、上記マイクロストリップ線路の−2本をマイクロ
波信号の伝送線路として用い、残りのマイクロストリッ
プ線路の両端にはすべてダミーを設け、静磁波伝ばん媒
体を上記複数本のマイクロストリップ線路に接するよう
にして構成したことを特徴とする信号対雑音比改善素子
A plurality of microstrip lines are formed on a dielectric substrate, -2 of the microstrip lines are used as transmission lines for microwave signals, and dummies are provided at both ends of the remaining microstrip lines to transmit magnetostatic waves. A signal-to-noise ratio improving element characterized in that a propagation medium is configured to be in contact with the plurality of microstrip lines.
JP10142483U 1983-06-30 1983-06-30 Signal-to-noise ratio improvement element Pending JPS6011501U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10142483U JPS6011501U (en) 1983-06-30 1983-06-30 Signal-to-noise ratio improvement element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10142483U JPS6011501U (en) 1983-06-30 1983-06-30 Signal-to-noise ratio improvement element

Publications (1)

Publication Number Publication Date
JPS6011501U true JPS6011501U (en) 1985-01-26

Family

ID=30239507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10142483U Pending JPS6011501U (en) 1983-06-30 1983-06-30 Signal-to-noise ratio improvement element

Country Status (1)

Country Link
JP (1) JPS6011501U (en)

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