JPS60110021A - Voltage stabilizing circuit provided with low voltage detecting circuit - Google Patents

Voltage stabilizing circuit provided with low voltage detecting circuit

Info

Publication number
JPS60110021A
JPS60110021A JP21731783A JP21731783A JPS60110021A JP S60110021 A JPS60110021 A JP S60110021A JP 21731783 A JP21731783 A JP 21731783A JP 21731783 A JP21731783 A JP 21731783A JP S60110021 A JPS60110021 A JP S60110021A
Authority
JP
Japan
Prior art keywords
voltage
circuit
transistor
current
current mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21731783A
Other languages
Japanese (ja)
Other versions
JPH0576044B2 (en
Inventor
Katsuharu Kimura
克治 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP21731783A priority Critical patent/JPS60110021A/en
Publication of JPS60110021A publication Critical patent/JPS60110021A/en
Publication of JPH0576044B2 publication Critical patent/JPH0576044B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor

Abstract

PURPOSE:To simplify the constitution of a circuit which detects the drop of the input voltage by using a current mirror circuit to detect and compare the base current of a control transistor constituting a voltage stabilizing circuit. CONSTITUTION:A current mirror circuit consisting of transistors (TR) Q3 and Q8, resistances R1 and R2 and TRs Q4 and Q5 and another current mirror circuit consisting of TRs Q6 and Q7 are provided to a power supply voltage stabilizing circuit containing an error voltage amplifying circuit 1, a start-up circuit 2, a reference voltage generator 3, etc. The base current of a TRQ1 is detected by a current mirror circuit consisting of TRs Q2 and Q3, and the TRQ8 is turned on and off in accordance with the difference between the base current of the TRQ1 and the collector current of the TRQ7. Then a low level of voltage can be detected by the collector voltage V3 of the TRQ8. The collector current I1 of the TRQ7 is varied with variation of the resistance R1. Then the detection current value can be varied for the base current of the TRQ1.

Description

【発明の詳細な説明】 不発明は電源電圧の低下全検出する低電圧検出回路を有
する電源電圧安定化回路に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a power supply voltage stabilizing circuit having a low voltage detection circuit for detecting any drop in power supply voltage.

従来、電池で動作する電源装置は、電池電圧の変動が大
きいために、その電源に安定化回路を設けて装置に供給
する電源電圧全安定化することにより装置の動作の安定
化が図らnている場合が多い。この場合、電池セル数を
少なくして電池容積を小さくシ、シかも電源安定化回路
の安定化さルうる入力電源電圧の最低電圧との電圧差を
小さくするために、′電源安定化回路の出カド2/ジス
タにはPNP )ランジスタ金用いることが多い。また
、この電池容量は有限であるので、電池容量が圓下し装
置の正常動作が困難となる前に、その電源電圧低下τ検
出し、利用者に知らしめて電池容量のある電池に交換し
てもらうか、あるいは電池を充電してもらう刀)して電
池容量を装置の動作に必要となる電池容量に常に保つ必
要がある。また、装置の正常動作を維持できないような
電源電圧にまで電圧が低下した場合には、そnを検出し
て装置自体の動作を停止しなけ詐ばならない。通常、こ
の電池電圧の低下ケ検出することによp電池容量の低下
を知ることが出来る。
Conventionally, power supply devices that operate on batteries have large fluctuations in battery voltage, so it has not been possible to stabilize the operation of the device by installing a stabilization circuit in the power supply to fully stabilize the power supply voltage supplied to the device. There are many cases. In this case, the number of battery cells can be reduced to reduce the battery capacity, and the power supply stabilization circuit can be stabilized. For output 2/distor, PNP) transistor gold is often used. In addition, since this battery capacity is limited, the power supply voltage drop τ is detected and the user is notified and replaced with a battery with a higher capacity before the battery capacity decreases and the normal operation of the device becomes difficult. It is necessary to always maintain the battery capacity at the level required for the operation of the device (either by receiving a battery or having the battery charged). Furthermore, if the power supply voltage drops to such a level that normal operation of the device cannot be maintained, this must be detected and the operation of the device itself must be stopped. Normally, by detecting this decrease in battery voltage, it is possible to know the decrease in p battery capacity.

このように電池で動作する装置には、電源安定化回路と
、低電圧検出回路と、低電圧警報回路あるいは低電圧強
制gJ換何回路持つ場合が多い。こnらの回路は各々の
回路を個別に持ってい゛るので、電源電圧安定化回路の
出力電圧の設定と、低電圧検出回路の検出電圧の設定と
を別々に行っている。
Devices that operate on batteries as described above often have a power supply stabilization circuit, a low voltage detection circuit, a low voltage alarm circuit, or a low voltage forced gJ conversion circuit. Since each of these circuits has its own circuit, the output voltage of the power supply voltage stabilization circuit and the detection voltage of the low voltage detection circuit are set separately.

この電源電圧安定化回路の出力電圧の設定電圧と、低電
圧検出回路の検出電圧の設定電圧とは、設定精度を要求
さ扛る場合が多いが、このようなときには両者ともに調
整する必要があp1ボリウム等の可変抵抗素子やあるい
は調整工数がかかるという欠点があった。
Setting accuracy is often required for the output voltage setting voltage of the power supply voltage stabilization circuit and the detection voltage setting voltage of the low voltage detection circuit, but in such cases, it is necessary to adjust both. This has the disadvantage that it requires a variable resistance element such as a p1 volume or a lot of adjustment work.

本発明の目的は、このような欠点を除き、検出用電圧の
調整が容易で簡単な回路を付加するだけで電圧低下を検
出できる電圧安定化回路を提供することにある。
An object of the present invention is to eliminate such drawbacks and provide a voltage stabilization circuit that can easily adjust the detection voltage and detect a voltage drop by simply adding a simple circuit.

本発明の低電圧検出回路つき電圧安定化回路の構成は、
ベース電流を制御さ几ることにより入力電圧を安定化し
た出力電圧を得る第1のトランジスタと、前記入力電圧
から基準電圧を得る基準電圧回路と、前記基準電圧と前
記出力電圧の分圧電圧との差を増幅する誤差増幅回路と
、この誤差増幅回路の出力により前記mlのトランジス
タのベース電流を制御する第2のトランジスタと、この
第2のトランジスタとベースが共通接続さnて第1のカ
レントイ2−回路を形成する第3のトランジスタと、こ
の第3のトランジスタのコレクタと接続σnこの第3の
トランジス夛と逆の導電型の一対のトランジスタからな
る第2のカレントミラー回路と、この第2のカレントミ
ラー回路と接続さf前記mlのカレントミラー回路と同
じ導電型の一対のトランジスタからなる第3のカレント
ミラー回路と、こnら第2′s?よび第3のカレントミ
ラー回路の接続点に接続さn前記入力電圧のレベル低下
金示す検出出力全出力する出力回路と、この出力回路の
接続点とならない側の前記第3のカレントミラー回路の
トランジスタのコレクタに負荷電圧金介して接続さnる
負荷手段とを備え、前記負荷手段の抵抗値あるいは前記
負荷電圧を変えることにより検出すべき前記電圧レベル
を設定することを特徴とする。
The configuration of the voltage stabilizing circuit with low voltage detection circuit of the present invention is as follows:
a first transistor that obtains an output voltage with a stabilized input voltage by controlling a base current; a reference voltage circuit that obtains a reference voltage from the input voltage; and a divided voltage of the reference voltage and the output voltage; an error amplification circuit for amplifying the difference between the two transistors; a second transistor for controlling the base current of the ml transistor by the output of the error amplification circuit; 2 - a third transistor forming a circuit; a second current mirror circuit consisting of a pair of transistors of a conductivity type opposite to that of the third transistor; connected to the collector of this third transistor; A third current mirror circuit consisting of a pair of transistors of the same conductivity type as the current mirror circuit of ml is connected to the current mirror circuit of f, and these are the 2's? and an output circuit connected to the connection point of the third current mirror circuit to output a full detection output indicating the level drop of the input voltage, and a transistor of the third current mirror circuit on the side that is not the connection point of the output circuit. The present invention is characterized in that it comprises a load means connected to the collector of the load means via a load voltage, and the voltage level to be detected is set by changing the resistance value of the load means or the load voltage.

本発明に2いては、電圧安定化回路を構成する制?ll
](電力)トランジスタのベースt 流k iJX 1
のカレントミラー回路で検出し、この検出電流と第3の
カレントミラー回路で設定さnた電流とを第2のカレン
トミラー回路ICオいて比較して出力することにより、
入力電圧の低下を検出できる低電圧検出回路を簡単に付
加することが出来る。
Part 2 of the present invention is the system for configuring the voltage stabilizing circuit. ll
] (Power) Transistor base t Current k iJX 1
By detecting this current with a current mirror circuit, comparing this detected current with a current set by a third current mirror circuit, and outputting the result from a second current mirror circuit IC,
A low voltage detection circuit that can detect a drop in input voltage can be easily added.

以下、不発明を図面により詳細に説明する。Hereinafter, the invention will be explained in detail with reference to the drawings.

第1図は従来の出力にi’NP)ランジスタを用いた低
電圧検出[gl路と電源電圧安定化回路の回路図である
。図中、lは誤差電圧増幅器、2は入力電圧VBから所
定電圧を供給するスタートアップ回路% 3.4は基準
電圧発生器、5はコンパレータ、6は電源電圧VBを供
給する電池、7は負荷、8は電圧検出の出力端子である
。電池6からの入力電源電圧VBは、出力のPNPI−
ランジスタQlの工ばツタに印加さnると共に、スター
トアップ回路2を立ち上げ電源電圧安定化回路を動作さ
せている。すなわち、誤差電圧増幅器lは、PNPトラ
ンジスタQlのコレクタ電圧V out k抵抗比3−
皮土一 と抵抗R4で分圧した電圧R3+R4・700丁 と基
準電圧発生器3の出力電圧VRmF とを比較して。
FIG. 1 is a circuit diagram of a conventional low voltage detection gl path and power supply voltage stabilization circuit using an i'NP transistor for output. In the figure, l is an error voltage amplifier, 2 is a startup circuit that supplies a predetermined voltage from the input voltage VB, 3.4 is a reference voltage generator, 5 is a comparator, 6 is a battery that supplies power supply voltage VB, 7 is a load, 8 is an output terminal for voltage detection. The input power supply voltage VB from the battery 6 is the output PNPI-
At the same time, the voltage is applied to the transistor Ql, and the startup circuit 2 is started up to operate the power supply voltage stabilization circuit. That is, the error voltage amplifier l has the collector voltage V out k of the PNP transistor Ql, and the resistance ratio 3-
Compare the voltage R3+R4.700 divided by the resistor R4 and the output voltage VRmF of the reference voltage generator 3.

両者が一致する様1にトランジスタQ2を介してPNP
 l−ランジスタQtのベース電流IB f制御し、P
NPI−ランジスタQ1 のエミッタ・コレク夕闇電圧
Voi+ (=VB−VOUT)を変化させている。
PNP via transistor Q2 in 1 so that both match.
l- base current IB f of transistor Qt is controlled, P
The emitter-collect dusk voltage Voi+ (=VB-VOUT) of the NPI transistor Q1 is changed.

しかし、PNPトランジスタQ1のエミッタに印加さn
る電圧■Bが低下してPNP)ランジスタQ1のコレク
タ電圧V OUT に近づいてPNP トランジスタQ
lのエミッタ・コレクタ間電圧VOIの埴がPNP ト
ランジスタQlのエミッタ・コレクタ間飽和電圧 Va
n(sA・T)vcなってしまうと、PNPトランジス
タQ1のペース電流IBが急激に増加するが、エミッタ
・コレクタ間飽和電圧Vog(sA丁)はほぼ一定値と
なり、電源電圧Vmがそル以下に低下すると、電源電圧
安定化回路の出力電圧VOUTは一定値に保たnなくな
ジ、電源電圧VBの低下に伴い出力電圧■oUT も低
下していく。また、次式の電源電圧Vlに2いてPNP
トランジスタQ1ノヘース電流が急激に増加する。
However, if n applied to the emitter of PNP transistor Q1
The voltage B decreases and becomes PNP) as it approaches the collector voltage V OUT of transistor Q1 and becomes PNP transistor Q.
The value of the emitter-collector voltage VOI of transistor Ql is PNP.The emitter-collector saturation voltage of transistor Ql is Va
When n(sA・T)vc, the pace current IB of the PNP transistor Q1 increases rapidly, but the emitter-collector saturation voltage Vog(sA-T) remains almost constant, and the power supply voltage Vm remains below it. When the power supply voltage VB decreases, the output voltage VOUT of the power supply voltage stabilizing circuit can no longer be maintained at a constant value, and as the power supply voltage VB decreases, the output voltage VOUT also decreases. Also, if the power supply voltage Vl is 2 and the PNP
The current flowing through transistor Q1 increases rapidly.

V 1= (1+e) VRgy+Vom(sAt) 
++−+++(1)こnはPINi’トランジスタQt
が飽和してしまい、PNPトランジスタQlの直流電流
増幅度hFIlは思@、 vc減少するが、PNP)ラ
ンジスタQlのコレクタ電流loが定負荷(7)ではほ
とんど変化しないので、PNP)ランジスタQlのベー
ス電流IBが急激に増加するからである。この様子は。
V 1= (1+e) VRgy+Vom(sAt)
++-+++ (1) This is PINi' transistor Qt
saturates, and the DC current amplification hFIl of the PNP transistor Ql decreases, but since the collector current lo of the PNP transistor Ql hardly changes under constant load (7), the base of the PNP transistor Ql This is because the current IB increases rapidly. What does this look like?

第2図の特性図に示すと′s?シである。As shown in the characteristic diagram in Figure 2, 's? It is shi.

また、第1図に示さ扛る低電圧検出回路は、入力電源電
圧VBを抵抗R5と抵抗ub で分圧した電圧VRB、
/とをコンパレータ5で比較して、低電圧検出回路の出
力端子8に出力している。
In addition, the low voltage detection circuit shown in FIG.
/ is compared by the comparator 5 and output to the output terminal 8 of the low voltage detection circuit.

また、電源電圧安定化回路の出力電圧voU丁は次式で
示さfる。
Further, the output voltage voUd of the power supply voltage stabilizing circuit is expressed by the following equation.

この回路は、基準電圧発生器3の出方電圧VBIFのバ
ラツキと抵抗R3,抵抗几4のバラツキがあシ、出力電
圧VO[IT を−足側差内に入nるためには抵抗R3
と抵抗R4の比を調整設定する場脅が多くある。また、
低電圧検出回路の検出電圧■2は次式で示さnる。
This circuit suffers from variations in the output voltage VBIF of the reference voltage generator 3 and variations in the resistors R3 and 4. In order to bring the output voltage VO[IT within the - side difference, the resistor R3 is required.
There are many opportunities to adjust and set the ratio of resistor R4 and resistor R4. Also,
The detection voltage (2) of the low voltage detection circuit is expressed by the following equation.

この式においては、基31!電圧発生器4の出方電圧■
B11y/のバラツキと抵抗R5と抵抗R6のバラツキ
かめ、0、低電圧検出回路の検出電圧■2を一定偏差内
に入社るためには抵抗1−L5と抵抗ル6の比を調整設
定することが必要となり、調歪工数がかかる欠点がめっ
た。
In this formula, the group 31! Output voltage of voltage generator 4■
Variations in B11y/ and variations in resistors R5 and R6 In order to keep the detection voltage ■2 of the low voltage detection circuit within a certain deviation, adjust the ratio of resistors 1-L5 and resistors R6. The disadvantage is that it requires a lot of man-hours for adjustment.

第3図は本発明の一実施例の回路図である。この実施例
は、第1図の電源電圧安定化回路にトランジスタQ3.
 Q8と、抵抗R1,kL+2と、トランジスタQ4.
 Qsからなる第2のカレントミラー回路と、トランジ
スタQs、Q7からなる第3のカレントミラー回路とを
追加したものである。トランジスタQsのベースはトラ
ンジスタQ2のベースに接続され、こnらトランジスタ
Q2. Q3は第1のカレントミラー回路全構成してい
る。このトランジスタQ3のコレクタは、第2のカレン
トミラー回路のトランジスタQ4のベース、コレクタお
よヒトランジスタQsのベースに接続さtl トランジ
スタQ5のコレクタは、第3のカレントミラー回路のト
ランジスタQ6のコレクタに接続さ几、同時にトランジ
スタQa、Q7の各ベースと接続さn1抵抗几xk介し
て電圧が供給さnている。トランジスタQs のベース
は第2のカレントソースを構成するトランジスタQ5の
コレクタにWiden、。
FIG. 3 is a circuit diagram of one embodiment of the present invention. In this embodiment, transistor Q3.
Q8, resistor R1, kL+2, and transistor Q4.
A second current mirror circuit consisting of Qs and a third current mirror circuit consisting of transistors Qs and Q7 are added. The base of transistor Qs is connected to the base of transistor Q2, and these transistors Q2. Q3 constitutes the entire first current mirror circuit. The collector of this transistor Q3 is connected to the base and collector of transistor Q4 of the second current mirror circuit and the base of transistor Qs. The collector of transistor Q5 is connected to the collector of transistor Q6 of the third current mirror circuit. At the same time, a voltage is supplied through the n1 resistor xk connected to the bases of the transistors Qa and Q7. The base of transistor Qs is connected to the collector of transistor Q5, which constitutes a second current source.

トランジスタQ8のコレクタは抵抗R2′に介して電圧
が供給さn、このコレクタが低電圧検出回路の出力端子
8となっている。
A voltage is supplied to the collector of the transistor Q8 via a resistor R2', and this collector serves as the output terminal 8 of the low voltage detection circuit.

今、第1のカレントミラー回路のトランジスタQz、Q
3のエミツタ面積比im:lとし、第2のカレントミラ
ー回路のFランジスタQ4.Q5 のエミツタ面積比i
n:lとし、第3のカレントミラー回路のトランジスタ
Qs、 Q7のエミツタ面積比et: 1とすると、ト
ランジスタQ7 (Dコレクタ電流I工とPNP トラ
ンジスタQ1のベース電流IB との大小間係によシ、
トランジスタQ8がオンあるいはオフし、トランジスタ
Q8のコレクタ電圧■3により低電圧検出ができる。す
なわち■Bくml1n0t″11のときV3=VOIJ
T1B≧mlInl1t・■1のときV a w Oと
な5.PNPI−ラ/ジスタQ1のベース電流IBがm
sn*te11よシ大きくなった時を検出できる。また
、抵抗Rx’を変えると、トランジスタQ7のコレクタ
電流11 が変わるから、PNPトランジスタQ1のベ
ース電流IBの検出電流値も俊えらしる。
Now, the transistors Qz, Q of the first current mirror circuit
3 with an emitter area ratio im:l, and the F transistor Q4 of the second current mirror circuit. Emitter area ratio i of Q5
If n: l and the emitter area ratio of the transistor Qs and Q7 of the third current mirror circuit is 1, then the difference between the magnitude of the transistor Q7 (D collector current I and the base current IB of the PNP transistor Q1) is ,
Transistor Q8 is turned on or off, and low voltage can be detected based on the collector voltage (3) of transistor Q8. In other words, when ■Bkuml1n0t″11, V3=VOIJ
When T1B≧mlInl1t・■1, V a w O 5. The base current IB of the PNPI resistor Q1 is m
It is possible to detect when sn*te11 becomes larger. Furthermore, since the collector current 11 of the transistor Q7 changes when the resistor Rx' is changed, the detected current value of the base current IB of the PNP transistor Q1 is also likely to be improved.

このと!PNP )ランジスタQzのベース電流■Bと
PNP トランジスタQ1のエミッタに供給さルる電源
電圧Vβとの関係が、第4図の特性図に示さ扛る。第4
図に3いて、負荷電流ILの大小によってベース電流が
曲線A、 Bのように変化する。こnら曲線A、Bと抵
抗比1によシ設定さnたN 流ItのレベルC(m−n
−t−Il)とを比較すると、負荷電源の大きい時(A
) にはベース電圧v2′で出力電圧v3が電圧■oU
Tを出力し、(−曲線F)1負荷電流の少い時(B)に
はベース電圧v2で出力電圧v3が電圧Vour’Th
出力し、(曲線H)こ扛らは曲線F、Hにより示さ1し
る。また。
Konoto! The relationship between the base current B of the PNP transistor Qz and the power supply voltage Vβ supplied to the emitter of the PNP transistor Q1 is shown in the characteristic diagram of FIG. Fourth
In Figure 3, the base current changes as shown by curves A and B depending on the magnitude of the load current IL. These curves A, B and the resistance ratio 1 are set to the level C (m-n
-t-Il), when the load power is large (A
), the base voltage v2' and the output voltage v3 are the voltage ■oU
(-curve F) 1 When the load current is small (B), the output voltage v3 is the voltage Vour'Th at the base voltage v2.
(Curve H) These outputs are shown by curves F and H. Also.

抵抗1(1の抵抗値を大きくして設定電流lx”fir
少くして(レベルm−nat・I 1/ )比較すると
、負荷電流の大きい時(A)にはベース電圧■2″′で
出力電圧VOLIT k出力しく曲線E)、負荷電流の
小さい時(B)にはベース電圧v2″で出力電圧voU
丁を出力する(曲線G)。
Resistor 1 (increase the resistance value of 1 to set the current lx”fir
If we compare the output voltage (VOLIT k) at a base voltage of 2'' when the load current is large (A), and when the load current is small (B), ) has a base voltage v2″ and an output voltage voU
output (curve G).

なお、曲線J、 Kは負荷電流の大きい、ひよび小さい
時の出力電圧V OUT を示している。
Note that curves J and K show the output voltage V OUT when the load current is large and small.

このように抵抗R1の値を調整してトランジスタQ7の
コレクタ電流11 が設定さn、この設定電流レベルを
変えることにより低電圧検出回路の検出レベルを調整す
ることが出来る。
In this way, the collector current 11 of the transistor Q7 is set by adjusting the value of the resistor R1, and by changing this set current level, the detection level of the low voltage detection circuit can be adjusted.

本発明によnば、電圧安定化回路に、3個のカレントミ
ラー回路と、出力回路となる1個のトランジスタおよび
1個の抵抗とを追加するだけで低電圧検出回路が得らn
る。
According to the present invention, a low voltage detection circuit can be obtained by simply adding three current mirror circuits, one transistor serving as an output circuit, and one resistor to a voltage stabilizing circuit.
Ru.

第5図は本発明の第2の実施例の部分回路図でめる。こ
の回路は第3図IC′i?ける第3のカレントミラー回
路の抵抗比IVc供給さnる電圧を二段階に切換えらn
るようにして、1氏電圧の検出電圧を二段階にしたもの
である。このために、第2図の入力電圧vnと抵抗kL
lとの間に、順方向に接続したダイオードDIとこのダ
イオードD1の両端全短絡できるトランジスタQ9との
並列接続回路を挿入し、このトランジスタQ9は、抵抗
比5を弁じて電圧VDDの供給さ扛るトランジスタQt
oにより駆動して切換えている。丁なわち、電圧VII
Dのハイ(iV以上)かロウ(0,5V以下)でトラン
ジスタQ9が93換えら几、順方向電圧V?の電圧差の
ある出力電圧を得ることが出来る。なお、この電圧■D
Dは入力電源電圧Va抵抗分割などをした電圧検出回路
9vcよシ抽出丁nばよい。
FIG. 5 shows a partial circuit diagram of a second embodiment of the present invention. This circuit is shown in Figure 3 IC'i? The resistance ratio IVc of the third current mirror circuit to be supplied is switched in two stages.
In this way, the detection voltage of the 1°C voltage is divided into two stages. For this purpose, input voltage vn and resistance kL shown in FIG.
A parallel connection circuit consisting of a diode DI connected in the forward direction and a transistor Q9 that can short-circuit both ends of the diode D1 is inserted between the transistor Q9 and the transistor Q9. transistor Qt
It is driven and switched by o. That is, voltage VII
When D is high (more than iV) or low (less than 0.5V), the transistor Q9 changes 93 times, and the forward voltage V? It is possible to obtain an output voltage with a voltage difference of . In addition, this voltage ■D
D may be extracted from the voltage detection circuit 9vc which is divided by the input power supply voltage Va by resistors.

このように検出電圧を二段階に検出できることは、例え
ば第1段階の検出電圧で警報信号を出力し、第2段階の
恢出電圧で強制切換を行うような制御が可能となる。こ
のような回路は、簡単な論理回路で容易に構成すること
ができる。また5例えばスタンドバイ時と正常動作時の
ように、負荷電流が2段階の動作状態にある装置や、あ
るいは送受信機のめるシステムで、受信機のみ動作の状
態と、送受信機両者が動作状態とのめる装置においては
、2段階の検出電圧値の電圧差を大きく出来る。こnら
の装置全構成する場合に同一〇電圧検出回路で対応でき
るという利点がある。
The fact that the detection voltage can be detected in two stages in this manner enables control such as outputting an alarm signal at the first stage detection voltage and performing forced switching at the second stage detection voltage, for example. Such a circuit can be easily constructed using a simple logic circuit. 5 For example, in devices where the load current is in two operating states, such as during standby and normal operation, or in systems that include a transmitter and receiver, the receiver may be in an operating state and both the transmitter and receiver may be in an operating state. In the device, the voltage difference between two levels of detected voltage values can be increased. There is an advantage that the same voltage detection circuit can be used for all of these devices.

さらに、低電圧検出回路の検出電圧は電源電圧安定化回
路の出力電圧と、出力の負荷電流と、前記抵抗値で決定
さnるので、2段階以上の電圧検出を行う場曾でも各検
出電圧の電圧値の大小が逆転することがないように設定
出来、従って各検出電圧を別々に設定する必要がなく、
調整部品と調整工数も省くことが出来る。′!1′た、
3糺のカレントミラー回路の構成によシ、低電圧検出回
路部の駆動回路電流も小さく出来、しかも回路も簡単で
あるなどの利点が大きい。
Furthermore, since the detection voltage of the low voltage detection circuit is determined by the output voltage of the power supply voltage stabilization circuit, the output load current, and the resistance value, each detection voltage can be set so that the magnitude of the voltage value will not be reversed, so there is no need to set each detection voltage separately.
Adjustment parts and adjustment man-hours can also be omitted. ′! 1'
The structure of the three-wire current mirror circuit has great advantages such as the drive circuit current of the low voltage detection circuit can be made small and the circuit is simple.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の低電圧検出回路と電源電圧安定化回路の
回路図、第2図は第1図の動作を説明する入力電圧vn
に対するベース電流Inおよび出力電圧■oU丁 の特
性図、第3図は本発明の第1の実施例の回路図、第4図
は第3図の動作fr、説明する入力電圧VBに対するベ
ース電流layよび出力′電圧VOUT の特性図、第
5図は本発明の第2の実施例の部分回路図である。図に
おいてl・・・・・・誤差電圧増幅器、2・・・・・・
スタートアップ回J 3.4・・・・・・基準電圧発生
器、5・・・・・・コンパレータ、6・・・・・・電池
、7・・・・・・負荷、8・旧・・出方端子、9・・・
・・・電圧検出回路、 Qto Q4s Q5# Q9
・・・・・・NPN l−ランジスタ、Q2. Q3.
 Q6. Q7. Qto・−・PNPI−7ンジスタ
、R1,1−L2.几3. R4,几5 ”’ ”。 抵抗である。 ′¥′−1個 茅2回 v3珊 aVeu 卒24−口
Figure 1 is a circuit diagram of a conventional low voltage detection circuit and power supply voltage stabilization circuit, and Figure 2 is an input voltage vn explaining the operation of Figure 1.
3 is a circuit diagram of the first embodiment of the present invention, FIG. 4 is the operation fr of FIG. 3, and the base current lay with respect to the input voltage VB to be explained. FIG. 5 is a partial circuit diagram of a second embodiment of the present invention. In the figure, l...error voltage amplifier, 2...
Startup time J 3.4...Reference voltage generator, 5...Comparator, 6...Battery, 7...Load, 8.Old...Output terminal, 9...
...Voltage detection circuit, Qto Q4s Q5# Q9
...NPN l-transistor, Q2. Q3.
Q6. Q7. Qto--PNPI-7 register, R1,1-L2. 3. R4, 几5 ”' ”. It is resistance. '¥'-1 piece 2 times v3 Sana Veu Graduation 24-mouth

Claims (1)

【特許請求の範囲】 ベース電流を制御さnることによシ入ヵ電圧を安定化し
た出力電圧を得る第1のトランジスタと、前記入力電圧
から基準電圧を得る基準電圧回路と、前記基準電圧と前
記出力電圧の分圧電圧との差を増幅する誤差増幅回路と
、この誤差増幅回路の出力により前記第1のトランジス
タのペース電流全制御する第2のトランジスタと、この
第2のトランジスタとベースが共通接続さfて第1のカ
レントミラー回路全形成する第3のトランジスタト、こ
の第3のトランジスタのコレクタと接続さnこの第3の
トランジスタと逆の導電型の一対のトランジスタからな
る第2のカレントミラー回路と。 この第2のカレントミラー回路と接続さ几前記第1のカ
レントミラー回路と同じ導電型の一対のトランジスタか
らなる@3のカレントミラー回路と、こ1.ら第22よ
び第3の力Vントミラー回路の接続点に接続さn@記大
入力電圧レベル低下を示す検出出力を出力する出力回路
と、この出力回路の接続点とならない側の前記第3のカ
レントミラー回路のトランジスタのコレクタに負荷電圧
を介して接続さfる負荷手段とを備え、前記負荷手段の
抵抗値あるいは前記負荷電圧を変えることにより検出す
べき前記電圧レベルを設定すること全特徴とする低電圧
検出回路つき電圧安定化回路。
[Scope of Claims] A first transistor that obtains an output voltage with a stabilized input voltage by controlling a base current, a reference voltage circuit that obtains a reference voltage from the input voltage, and a reference voltage circuit that obtains a reference voltage from the input voltage. and a divided voltage of the output voltage; a second transistor that fully controls the pace current of the first transistor by the output of the error amplification circuit; are commonly connected to a third transistor forming the first current mirror circuit, and connected to the collector of the third transistor, which is a second transistor consisting of a pair of transistors of the opposite conductivity type to the third transistor. with a current mirror circuit. A current mirror circuit @3 is connected to the second current mirror circuit and is composed of a pair of transistors of the same conductivity type as the first current mirror circuit. an output circuit that outputs a detection output indicating a large input voltage level drop, which is connected to the connection point of the 22nd and third voltage mirror circuits; and a load means connected to the collector of the transistor of the current mirror circuit via a load voltage, and the voltage level to be detected is set by changing the resistance value of the load means or the load voltage. Voltage stabilization circuit with low voltage detection circuit.
JP21731783A 1983-11-18 1983-11-18 Voltage stabilizing circuit provided with low voltage detecting circuit Granted JPS60110021A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21731783A JPS60110021A (en) 1983-11-18 1983-11-18 Voltage stabilizing circuit provided with low voltage detecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21731783A JPS60110021A (en) 1983-11-18 1983-11-18 Voltage stabilizing circuit provided with low voltage detecting circuit

Publications (2)

Publication Number Publication Date
JPS60110021A true JPS60110021A (en) 1985-06-15
JPH0576044B2 JPH0576044B2 (en) 1993-10-21

Family

ID=16702269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21731783A Granted JPS60110021A (en) 1983-11-18 1983-11-18 Voltage stabilizing circuit provided with low voltage detecting circuit

Country Status (1)

Country Link
JP (1) JPS60110021A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105223412A (en) * 2014-05-30 2016-01-06 展讯通信(上海)有限公司 A kind of current detection circuit and power management chip
CN105223518A (en) * 2014-05-30 2016-01-06 展讯通信(上海)有限公司 A kind of power detection system based on Buck circuit and power management chip
CN106300248A (en) * 2016-08-31 2017-01-04 电子科技大学 A kind of under-voltage protecting circuit of current control mode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105223412A (en) * 2014-05-30 2016-01-06 展讯通信(上海)有限公司 A kind of current detection circuit and power management chip
CN105223518A (en) * 2014-05-30 2016-01-06 展讯通信(上海)有限公司 A kind of power detection system based on Buck circuit and power management chip
CN105223518B (en) * 2014-05-30 2018-12-21 展讯通信(上海)有限公司 A kind of power detection system and power management chip based on Buck circuit
CN106300248A (en) * 2016-08-31 2017-01-04 电子科技大学 A kind of under-voltage protecting circuit of current control mode

Also Published As

Publication number Publication date
JPH0576044B2 (en) 1993-10-21

Similar Documents

Publication Publication Date Title
US5589759A (en) Circuit for detecting voltage variations in relation to a set value, for devices comprising error amplifiers
US6177785B1 (en) Programmable voltage regulator circuit with low power consumption feature
US6815938B2 (en) Power supply unit having a soft start functionality and portable apparatus equipped with such power supply unit
US7106034B2 (en) Voltage regulator circuit with a low quiescent current
JPH02292906A (en) Error amplifier for parallel operation type self-contained current or voltage regulator using transconductance type power amplifier
US7622901B2 (en) System power supply apparatus and operational control method
US20040135567A1 (en) Switching regulator and slope correcting circuit
US6522114B1 (en) Noise reduction architecture for low dropout voltage regulators
JP3610556B1 (en) Constant voltage power supply
US10656664B1 (en) Voltage generator
US5883504A (en) Power supply unit
US6570443B2 (en) Amplitude control of an alternating signal generated by an electronic device such as an oscillator circuit
JPS60110021A (en) Voltage stabilizing circuit provided with low voltage detecting circuit
JP2003216251A (en) Direct current stabilization power supply
EP0620513B1 (en) Balanced voltage-to-current converter with quiescent current control
US6175226B1 (en) Differential amplifier with common-mode regulating circuit
EP0377978B1 (en) A PLL control apparatus
JP2001216037A (en) Regulator
JPH04295222A (en) Stabilized power supply circuit
KR0154842B1 (en) Current detecting circuit for sensor transistor with temperature compensation
KR0154843B1 (en) Minimum power consumption current detecting circuit with temperature compensation
JPH0744248A (en) Constant voltage circuit
SU1589377A1 (en) Power amplifyer
JP2762466B2 (en) Variable attenuation circuit
JP2661138B2 (en) Current amplifier circuit