JPS60107868A - Semiconductor device - Google Patents

Abstract

PURPOSE:To eliminate the phase difference between unit transistors while avoiding reduction of gain or output by a method wherein pectinated structure microwave transistors are divided into groups containing multiple units of these transistors to be mutually connected with the central part of the group so far divided utilizing connecting conductors with the same length. CONSTITUTION:Pectinated structure microwave transistors composed of unit transistors 14a, 14b are divided into groups of multiple units of transistor regions 16, 17. Next these groups of transistors are fixed on a substrate composed of a gate bonding pad 11, drain bonding pads 12 and a source bonding pad 13 while the transistors 14a, 14b and the pads 11, 12 and 13 are mutually connected utilizing connecting conductors 15a, 15b with the same length. Through these procedures, the transistors 14a, 14b and the pads 11, 12 and 13 regardless of their distance from one another may mutually be connected utilizing the connecting conductors 15a, 15b with the same length to eliminate the phase difference between the unit transistors.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and more particularly to a microwave transistor such as a GaAs FF1T having a comb-shaped structure.

Many microwave transistors such as GaAsPET have a comb-shaped structure in order to increase their output. Figure 1 (A) shows microwave Ga with a conventional comb-shaped structure.
An example of an AsPET pattern is shown. In Figure 1 (A), 1 is a gate bonding pad (input terminal), 2 is a pad for gate bonding (input terminal);
3 indicates a drain bonding pad (output terminal), and 3 indicates a source bonding pad. 4.5 is one gate each.

Unit transistors A and B formed from a drain and a source are shown, and each unit transistor has a gate power supply conductor 6. A drain power supply conductor 7 and a source power supply conductor 8 are connected in parallel, and the gate power supply conductor is further connected to the gate bonding pad 1 by a connection conductor 9. Figure 1 (B) shows x − in Figure 1 (A).
An x' cross section is shown. In Figure 1 (B), 1 is game) (A
℃), 2 is the drain (AuGe), 3 is the source (
4 is an n-type OaAs epitaxial layer, and 5 is a semi-insulating GaAs substrate.

However, when microwave operation is performed using the transistors shown in FIGS. 1(A) and 1(B), unit transistor A (4) and unit transistor B (5) in the pattern are
Since the distances between the transistor A and the gate bonding pad 1 are different, the electrical lengths are different, and a phase difference occurs between the unit transistor A and the unit transistor B, resulting in a gain or output power that is smaller than the originally expected value. There is a drawback that there is no

An object of the present invention is to provide a power supply method that eliminates the phase difference between unit transistors in a comb-shaped microwave transistor and prevents a decrease in output power and gain.

The present invention provides a comb-shaped microwave transistor in which a plurality of unit transistors, each of which is supplied with power from one bonding pad at least one of the gate or drain, is divided into a plurality of groups, and the divided transistors are divided from the bonding pad. Connection is made approximately at the center of each group using connection conductors having the same electrical length to eliminate phase differences between unit transistors.

Embodiments of the semiconductor device according to the present invention will be described in detail below with reference to the drawings. FIG. 2 shows an embodiment of a semiconductor device according to the present invention. FIG. 2 shows a comb-shaped GaAs PBT lc consisting of 12 unit transistors. 11
1 is a pad for gate bonding, and 12 is a pad for drain bonding.

13 is a source bonding pad. In this embodiment, the group 14a is made up of 12 even unit transistors each of which is supplied with power from one gate bonding pad 11, each consisting of 6 unit transistors.

A connection to a gate bonding pad is made by connection conductors 15a and 15b from a middle position of the group divided into 14b.

By adopting the structure as shown in Fig. 2, unit transistor A' (16) & unit transistor B' (
17), and the original high frequency characteristics can be easily brought out.

Another embodiment is shown in FIG. In FIG. 3, 21 is a gate bonding pad, 22 is a drain bonding pad, and 23 is a source bonding pad.

In this embodiment, 16 unit transistors connected in parallel are divided into 8 regions, and connection to the gate bonding pad 21 is made by the connection conductor 25 from the middle position of each divided unit transistor region 24. being done.

In the embodiment shown in FIG. 2, a plurality of unit transistors connected in parallel are divided into t-2 parts, and the connection from the gate bonding pad 11 is made by connecting conductors 15a and 15b, but the connection to the drain bonding pad is made by connecting conductors 15a and 15b. Of course, the same effect can be expected even if the connection is divided into sections. Also, it goes without saying that the number of divisions into one is not limited to two. In the embodiment, there is one pad each for gate and drain bonding, but it is clear that the same effect can be obtained even if there is a plurality of pads for bonding ink.

As explained in detail above, according to the present invention, it is possible to reduce the electrical phase difference in each part of the pattern by using an extremely simple pattern configuration, and it is possible to avoid a decrease in gain or output power due to the phase difference. The effects of the present invention are particularly significant in microwave transistors having a comb-shaped structure.

[Brief explanation of drawings]

FIG. 1 shows an example of a semiconductor device having a conventional structure. FIG. 2 shows one embodiment of a semiconductor device according to the present invention. FIG. 3 shows another embodiment of the semiconductor device according to the present invention. In the drawing, 11.21 is a gate bonding pad, 12.22 is a drain bonding pad, and 13.
23 are source bonding pads, 15a, 15b,
Reference numeral 25 indicates a connecting conductor, and reference numerals 16, 17, and 24 indicate unit transistor regions, respectively.

Claims (1)

[Claims] 1. A plurality of unit transistor regions each consisting of a drain, a source, and a gate sandwiched therebetween are formed, and each of the unit transistor regions is multiplied by a gate power supply conductor, a drain power supply conductor, and a source power supply conductor. A plurality of power supply conductors connected in parallel in parallel, each having a comb-shaped structure in which each of the power supply conductors is connected to a bonding pad by a connection conductor, and is supplied with power from one bonding pad of at least one of the gate and the drain. A semiconductor device characterized in that the unit transistors are divided into a plurality of groups, and the bonding pad and approximately the center of each of the divided unit transistor groups are connected by a connecting conductor having a short electrical length. . 2. The semiconductor device according to claim 1, wherein the semiconductor device is divided into a plurality of unit transistors fi-2n groups that are supplied with power from one bonding pad.