JPS60106968A - Heating mechanism for appratus for forming film in vacuum - Google Patents

Heating mechanism for appratus for forming film in vacuum

Info

Publication number
JPS60106968A
JPS60106968A JP21401583A JP21401583A JPS60106968A JP S60106968 A JPS60106968 A JP S60106968A JP 21401583 A JP21401583 A JP 21401583A JP 21401583 A JP21401583 A JP 21401583A JP S60106968 A JPS60106968 A JP S60106968A
Authority
JP
Japan
Prior art keywords
substrate holder
temperature
heaters
heater
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21401583A
Other languages
Japanese (ja)
Inventor
Yutaka Saito
裕 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21401583A priority Critical patent/JPS60106968A/en
Publication of JPS60106968A publication Critical patent/JPS60106968A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To heat uniformly a sample on a substrate holder by placing plural temp. sensors among the lines of plural heaters arranged in the holder so as to control separately the heaters. CONSTITUTION:Plural heaters 30a-30i are arranged in a substrate holder 22 set in a vacuum vessel 21 in the diametral direction of the holder 22 at intervals. Plural temp. sensors 31a, 31b are placed among the lines of the heaters 30a-30i, and the leads 33a, 33b, 35a, 35b of the heaters 30a-30i and the sensors 31a, 31b are taken out of the vessel 21 through the rotating shaft 25 of the holder 22. The heaters 30a-30i are separately controlled, and the sample on the holder 22 is uniformly heated.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、真空蒸着装置、スパッタリング装置、プラズ
マCVD装置等の真空成膜装置用の加熱機構に係り、特
に基板ホルダ上の試料基板を均一に加熱するために好適
な真空成膜装置用の加熱機構に関する。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a heating mechanism for a vacuum film forming apparatus such as a vacuum evaporation apparatus, a sputtering apparatus, a plasma CVD apparatus, etc., and particularly relates to a heating mechanism for uniformly heating a sample substrate on a substrate holder. The present invention relates to a heating mechanism for a vacuum film forming apparatus suitable for heating.

〔発明の背景〕[Background of the invention]

第1因に従来の真空成膜装置用の加熱機構の一列を示す
The first factor is a row of heating mechanisms for a conventional vacuum film forming apparatus.

この図に示すものは、真空槽1内に基板ホルダ2とヒー
タ5とが設置されている。前記基板ホルダ2は、回転軸
3と取付フランジ4とを介して真空41内で、矢印で示
す方向に回転可能に設けられている。前記ヒータ5は、
基板ホルダ2の下方に固定されている。
In what is shown in this figure, a substrate holder 2 and a heater 5 are installed in a vacuum chamber 1. The substrate holder 2 is rotatably provided in a vacuum 41 via a rotating shaft 3 and a mounting flange 4 in the direction shown by the arrow. The heater 5 is
It is fixed below the substrate holder 2.

この加熱機構では、基板ホルダ2を回転させつつヒータ
5により加熱し、基板ホルダ2上の試料基板(図示せず
)を加熱するようになっている。
In this heating mechanism, the substrate holder 2 is rotated and heated by the heater 5, thereby heating the sample substrate (not shown) on the substrate holder 2.

しかし、この従来の加熱機構では、基板ホルダ2を回転
させながら加熱しても、基板ホルダ2とヒータ5とが離
れているため、ヒータ5自身の温度と基板ホルダ2の温
度とに差が生じ、温度精度が悪い欠点がある。
However, in this conventional heating mechanism, even if the substrate holder 2 is heated while being rotated, since the substrate holder 2 and the heater 5 are separated from each other, a difference occurs between the temperature of the heater 5 itself and the temperature of the substrate holder 2. , which has the disadvantage of poor temperature accuracy.

次に1第2図に従来の真空成膜装置用の加熱機構の他の
例を示す。
Next, FIG. 1 shows another example of a heating mechanism for a conventional vacuum film forming apparatus.

この図に示1−ものは、真空槽110同部に、回転軸1
3と取付ホルダ14とを介して基板ホノνダ12が回転
可能に設けられ、この基板ホルダ12にヒータ(図示せ
ず)が内蔵されている。前記ヒータのリードは、摺動ブ
ラシ15a 、 15bを用て基板ホルダ12の外部へ
導出されている。
The one shown in this figure has a rotating shaft 1 in the same part of the vacuum chamber 110.
3 and a mounting holder 14, a substrate hoist 12 is rotatably provided, and this substrate holder 12 has a built-in heater (not shown). The leads of the heater are led out of the substrate holder 12 using sliding brushes 15a and 15b.

この加熱j虚構においては、基板ホルダ12とヒータと
が一体となっているため、第1図に示した加熱機構より
も温度精度は同上する。
In this heating fiction, since the substrate holder 12 and the heater are integrated, the temperature accuracy is higher than that of the heating mechanism shown in FIG.

しかし、単に基板ホノνダ12にヒータを内蔵させただ
けでは、基板ホルダ12の内11II(中央部)と外側
とで放熱条件が異なるので、高精度の温度分布が得られ
ない欠点がある。また、試料基板の刀U熱条件は成膜プ
ロセスによっても異なるが、第2図に示す加熱機構で成
膜プロセスに対応する高精度の温度分布が得られない欠
点もある。さらに、ヒータの9−ドを真空槽111/:
に設けられた摺動ブラシ15a 、 15bを用いて基
板ホルダ12の外部へ導出しているため、真空同では摺
動ブラシ15a 、 15bの摩擦係数が大気に比較し
て大幅に大きくなL したがって摩耗が微しくなる。
However, simply incorporating a heater in the substrate holder 12 has the disadvantage that a highly accurate temperature distribution cannot be obtained because the heat dissipation conditions differ between the inside 11II (center) and the outside of the substrate holder 12. Furthermore, although the heating conditions of the sample substrate vary depending on the film forming process, the heating mechanism shown in FIG. 2 also has the disadvantage that a highly accurate temperature distribution corresponding to the film forming process cannot be obtained. Furthermore, the heater 9-de is connected to the vacuum chamber 111/:
Since the sliding brushes 15a and 15b provided in the air are guided to the outside of the substrate holder 12, the coefficient of friction of the sliding brushes 15a and 15b in a vacuum is significantly larger than that in the atmosphere. becomes fainter.

その摩耗粉が真空槽11Pjに浮遊するため、膜質に影
響を与え、良質の膜が得られないという欠点があった。
Since the abrasion powder floats in the vacuum chamber 11Pj, it affects the film quality and has the disadvantage that a good quality film cannot be obtained.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、前記従来技術の欠点をなくし、基板ホ
ルダを成膜プロセスに合わせて、高精度の温度分布に加
熱でき、しかも導電部材等の摩耗粉の発生を防止し得る
真空成膜装置用の加熱機構を提供するにある。
It is an object of the present invention to provide a vacuum film forming apparatus that eliminates the drawbacks of the prior art, that can heat a substrate holder to a highly accurate temperature distribution in accordance with the film forming process, and that can prevent the generation of abrasion powder of conductive members, etc. To provide a heating mechanism for

〔発りjの概要〕[Summary of Departure J]

本発明は、真壁槽内に基板ホルダを設置し、この基板ホ
ルダなヒータにより加熱し、基板ホルダを介して試料基
板を加熱しつつこの試料基板に膜を形成するXを成M装
置において、前記基板ホノνダの内部に、ヒータを基板
ホルダの直径方向にI!l隔をおいて複数個配列し、ヒ
ータ列間に複数個の温度検出器を配置し、前記ヒータと
温度検出器のリードを基板ホルダの回転軸のP」部を通
して真空槽の外部に導出するとともに、ヒータのリード
を、各温度検出器から入力する温度直に基づいて、当該
温度検出器の近傍のヒータを個別如温度制御する制御装
置に接続したところに特徴を有するもので、この構成に
より前記目的をすべて達成することができたものである
In the present invention, a substrate holder is installed in a Makabe tank, the substrate holder is heated by a heater, and a film is formed on the sample substrate while heating the sample substrate via the substrate holder. A heater is installed inside the substrate holder in the diametrical direction of the substrate holder. A plurality of temperature detectors are arranged at l intervals, and a plurality of temperature detectors are arranged between the rows of heaters, and the leads of the heaters and temperature detectors are guided to the outside of the vacuum chamber through the "P" portion of the rotation axis of the substrate holder. In addition, the heater lead is connected to a control device that individually controls the temperature of the heaters near the temperature sensor based on the temperature directly input from each temperature sensor. All of the above objectives were achieved.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第3図および第4図によシ説
明する。
An embodiment of the present invention will be described below with reference to FIGS. 3 and 4.

真空41F21は、真空排気系(図示せず)によシ減圧
し得るようになっている。この真空槽21内には、基板
ホルダ22が設置されており、真空槽21の底板にはモ
ータおよび摺動ブラシを支持するプラク、ト28が取9
付けられている。
The vacuum 41F21 can be reduced in pressure by an evacuation system (not shown). A substrate holder 22 is installed in the vacuum chamber 21, and a plate 28 for supporting the motor and sliding brush is attached to the bottom plate of the vacuum chamber 21.
It is attached.

前hピ基板ホルダ22は、第4図に示すように、基板ホ
ルダペース23と、上板24とを一体に結合して構成さ
れている。また、基板ホノシダ220基板ホルダペース
25には中空の回転軸25が設けられ、この回転軸25
は取付ブラシ26を介して真空槽21の底板に支持され
ている。前記回転軸25には、中空筒状の′電流導入端
子27が連結され、この電流導入端子27は前記プラケ
ット28に取シ付けられたモータ29に連結されている
As shown in FIG. 4, the front h-pi board holder 22 is constructed by integrally joining a board holder space 23 and an upper plate 24. Further, a hollow rotating shaft 25 is provided in the substrate honoshida 220 and the substrate holder space 25, and this rotating shaft 25
is supported on the bottom plate of the vacuum chamber 21 via a mounting brush 26. A hollow cylindrical current introducing terminal 27 is connected to the rotating shaft 25, and this current introducing terminal 27 is connected to a motor 29 attached to the placket 28.

前記基板ホルダ220基板ホルダベース23ト上板24
1[には、リング状のヒータ30a〜3oiカ基板ホノ
νダ22と同心状にかつ半径方向に間隔をおいて配列さ
れており、ヒータ30bと50cの間に温度検出器51
aが配置され、またヒータ30gとlhQ間には温度検
出器31bが配置されている。
Said substrate holder 220 substrate holder base 23 top plate 24
1, ring-shaped heaters 30a to 3 are arranged concentrically with the substrate honoda 22 and spaced apart in the radial direction, and a temperature detector 51 is arranged between the heaters 30b and 50c.
a is arranged, and a temperature detector 31b is arranged between the heater 30g and lhQ.

前記ヒータ50a 〜50d 130e 〜30i )
9−ド52a、52bと、温度検出器51a、31bの
リード33a。
The heaters 50a to 50d 130e to 30i)
9- leads 52a, 52b and leads 33a of temperature detectors 51a, 31b;

35bとは、中空の回転軸25を通って前記電流導入端
子27に接続されている。さらに、電流導入端子27に
おいて#記9−ド52a、52b K接続されたヒータ
用の9−ド54a、54bは、電流導入端子27の内部
に挿通され、かっ′Ht、流導入流子入端子外周面に固
着されたスリ、プリング36a 、 36bに接続され
、また電流導入端子27において前記リード55a 、
 55bに接続された温度検出、器用のリード55a 
、 55bは、電流導入端子27の内部に挿通され、か
つ電流導入端子27の外周面忙固着されたスリップリン
グ57a 、 57bに接続されている。そして、前記
ヒータ用のスリ、プリング56a 、 56bには、前
記プラク、ト28に取シ付けられたヒータ用の摺動ブラ
シ58a 、 58bが嵌合され、前記温度検出器用の
スリ、プリング37a57bには、同じプラケツト28
に収り付けられた温度検出器用の摺動ブラシ59a 、
 59bが嵌合されている。
35b is connected to the current introduction terminal 27 through the hollow rotating shaft 25. Furthermore, the nine-wires 54a, 54b for the heater connected to the #9-wires 52a, 52b at the current-introducing terminal 27 are inserted into the current-introducing terminal 27; The leads 55a, 36b are connected to the slots and springs 36b fixed to the outer peripheral surface, and the leads 55a,
Temperature detection, dexterity lead 55a connected to 55b
, 55b are inserted into the inside of the current introduction terminal 27 and connected to slip rings 57a and 57b fixedly fixed to the outer peripheral surface of the current introduction terminal 27. Sliding brushes 58a and 58b for the heater attached to the plate 28 are fitted into the heater slots and pulls 56a and 56b, and the heater slots and pulls 37a and 57b are fitted together. is the same bracket 28
a sliding brush 59a for the temperature sensor housed in;
59b is fitted.

前記ヒータ用の摺動ブラシ5Ba 、 58bは、制御
装置40の温度制御#41a 、 41biC!J−ド
45a45bを介して接続され、また温度検出器用の摺
動ブラシ59a 、 59bは、制御装置40の温度検
出指示部42a 、 42bに9−ド44a 、 44
bを介して接続されている。
The sliding brushes 5Ba, 58b for the heaters are used for temperature control #41a, 41biC! of the control device 40. The sliding brushes 59a and 59b for the temperature detectors are connected to the temperature detection instruction units 42a and 42b of the control device 40 via the J-domains 45a and 45b.
connected via b.

lI記制御装置40は、温度検出器31a 、 51b
から温度検出指示部42a 、 42bを通じて基板ホ
ルダ22における温度検出器設置位置の温度値を入力し
、この温度値に基づき、成膜プロセスに合わせて谷温度
制tIIll器41a 、 41bにリード45a。
The control device 40 includes temperature detectors 31a and 51b.
The temperature value at the temperature sensor installation position in the substrate holder 22 is inputted from the temperature detection instruction section 42a, 42b, and based on this temperature value, the lead 45a is sent to the valley temperature control device 41a, 41b in accordance with the film forming process.

45bを通じて各別に指令を送シ、一方の温度制御器4
1aを通じて温度検出6312の近傍のヒータ50a〜
ldを温度制御し、他方の温度側#器41bを通じて温
度検出器51bの近傍のヒータ30e〜50iを温度制
御し得るように構成されている。
45b, commands are sent separately to one temperature controller 4.
Heater 50a~ near temperature detection 6312 through 1a
It is configured so that the temperature of the heaters 30e to 50i near the temperature detector 51b can be controlled through the other temperature side # device 41b.

前記実施例の加熱機構は、次のように使用され、作用す
る。
The heating mechanism of the above embodiment is used and operates as follows.

すなわち、モータ29を駆動し、電流導入端子27およ
び回転軸25を介して基体ホルダ22を回転させる。
That is, the motor 29 is driven to rotate the base holder 22 via the current introduction terminal 27 and the rotating shaft 25.

一方、制御装置40を通じて温度制御器41a。On the other hand, the temperature controller 41a is controlled through the controller 40.

41bを作動させ、リード45a 、 43b−摺動ブ
ラシ38a 、 38b、 Mスリ、プリング36a 
、 66b−+9−ド34a 、 34b−+リード5
2a 、 52bを通じてヒータ30a 〜ld 、 
30e 〜30i ic給電し、ヒータ50a 〜ld
 、 50eS−50iK点弧し、基板ホルダ22を加
熱し、この基板ホルダ22上に載置された試料基板(図
示せず)を加熱する。
41b, leads 45a, 43b - sliding brushes 38a, 38b, M pickpocket, spring 36a
, 66b-+9-de 34a, 34b-+lead 5
Heaters 30a to ld through 2a and 52b,
30e ~ 30i IC power supply, heater 50a ~ ld
, 50eS-50iK is ignited to heat the substrate holder 22 and the sample substrate (not shown) placed on the substrate holder 22.

その間、@度検出451a 、 31bによシ基板ホル
ダ22における温度検出器設置の温度を検出し。
During this time, the temperature of the temperature sensor installed in the substrate holder 22 is detected by the temperature detection 451a and 31b.

その温度値を9−ド35a 、 33b −* 9−ド
ロ5a。
The temperature values are 9-do 35a, 33b-*9-do 5a.

35b −スリップ9ング57a 、 57b−4摺動
ブラシ39a 、 39b −+ 9−ド44a 、 
44bを通じて温度検出指示部42a 、 42bに送
る。ついで、制御装置40に゛しいて温度検出指示* 
42a 、 42bから温度値を敗シ込み、この温度値
に基づき、成膜プロセスに合わせて各温度側@141a
 、 41bに指令を送シ、一方の温度側wh器41a
 iCより前述の舶1!経路を通じて温度検出d51a
の近傍のヒータ50a〜30dが温度制御され、他方の
温度側t4Ja41bにより前述の経路を通じて温度検
出951bの近傍のヒータ50e〜soiが温度制御さ
れる。
35b-slip 9 ring 57a, 57b-4 sliding brush 39a, 39b-+9-de 44a,
44b to the temperature detection instruction sections 42a and 42b. Then, the control device 40 is instructed to detect the temperature*
The temperature values are entered from 42a and 42b, and based on these temperature values, each temperature side @141a is set according to the film forming process.
, sends a command to 41b, one temperature side wh device 41a
Said ship 1 from iC! Temperature detection through the path d51a
The temperature of the heaters 50a to 30d near the temperature detection 951b is controlled by the other temperature side t4Ja41b, and the temperature of the heaters 50e to soi near the temperature detection 951b is controlled by the other temperature side t4Ja41b.

したが9て、前記基板ホルダ22を成膜プロセスに合わ
せて、高精度の温度分布に加熱することができる。
However, the substrate holder 22 can be heated to a highly accurate temperature distribution in accordance with the film forming process.

そして、ヒータ用のリード52a 、 52bおよび3
4a 、 34bと、温度検出器用のリード55a、5
5bおよび35a 、 55bとを、回転軸25および
′眠流導入肩子27の内部を通し、真空槽21の外部に
設けられた電流導入端子27の外周面に固着されたスリ
、プリング36a 、 56b 、 57a 、 57
bに接続し、このスリップリング66a 、 56b 
、 57a 。
And leads 52a, 52b and 3 for the heater
4a, 34b and leads 55a, 5 for temperature sensor
5b and 35a, 55b are passed through the rotating shaft 25 and the inside of the sleep current introduction shoulder 27, and are fixed to the outer circumferential surface of the current introduction terminal 27 provided outside the vacuum chamber 21. , 57a, 57
b, and these slip rings 66a, 56b
, 57a.

37bに真空槽21の外部において摺動ブラシ38a。37b, a sliding brush 38a outside the vacuum chamber 21;

58b 、 59a 、 59bを嵌合しているので、
導電部材の摩耗粉が真空槽内で浮遊する不具合を完全に
解消することができる。
Since 58b, 59a, and 59b are fitted,
It is possible to completely eliminate the problem of abrasion particles of the conductive member floating in the vacuum chamber.

なお、本発明においては、各部の具体的な構造は図面に
示す実施例に限らず、所期の機能を発揮し得る構造であ
ればよいb 〔発明の効果〕 以上説明した本発明によれば、基板ホルダの内部に、ヒ
ータを基板ホルダの直径方向に間隔をおいて複数個配列
し、ヒータ列間に複数個の温度検出器を配置し、各温度
検出器から入力する温度値に基づき、制御装置を介して
当該温度検出器の近傍のヒータを個別に温度側−するよ
うに構成しているので、基板ホルダな成膜プロセスに合
わせて、高精度の温度分布に加熱し得る効果がある。
Note that in the present invention, the specific structure of each part is not limited to the embodiment shown in the drawings, but may be any structure that can perform the intended function.b [Effects of the Invention] According to the present invention described above , a plurality of heaters are arranged inside the substrate holder at intervals in the diameter direction of the substrate holder, a plurality of temperature detectors are arranged between the rows of heaters, and based on the temperature value input from each temperature detector, Since the heaters near the temperature detector are individually set to the temperature side via the control device, it is possible to heat to a highly accurate temperature distribution in accordance with the film forming process of the substrate holder. .

また、本発明によれば、前記ヒータと温度検出器の9−
ドを基板ホルダの回転軸の内部を通して真空槽の外部に
導出し、制御装置に接続しているので、真空槽内で導電
部材の摩耗粉が浮遊する不具合を完全に解消し得る効果
がある。
Further, according to the present invention, the heater and the temperature detector 9-
Since the conductor is led out of the vacuum chamber through the inside of the rotating shaft of the substrate holder and connected to the control device, it is possible to completely eliminate the problem of abrasion powder of the conductive member floating in the vacuum chamber.

さらに、本発明によれば、基板ホルダを高精度に温度分
布に加熱できることと、X望檀内での導電部材の摩耗粉
の浮遊をなくし得ることが相俟ち、試料基板に良質の膜
を形成し得る効果もめる。
Furthermore, according to the present invention, it is possible to heat the substrate holder with high precision to a temperature distribution, and the floating of abrasion powder of the conductive member within the Also consider the effects that can be formed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1因は従来の真空成膜装置の加熱機構の一例を示す縦
断面図、第2図は従来のこの種加熱機構の例を示す縦断
面図、第3図および第4図は本発明の一実施例を示すも
ので、その第3図は一部破断正面図、第4図は基板ホル
ダとこれの付属部材の拡大縦断正面図である。 21・・・真空槽、22・・・基板ホノνダ、25・・
・基板ホノνダの回転軸、27・・・電流導入端子、2
9・・・基板ホルダのモータ、50a〜30i・・・ヒ
ータ、31a。 31b=・・温度検出器、52a、 32b、 34a
、 34b−・・ヒータ用の9−ド、53a、 33b
、 35a、 35b 一温度検出器用のリード、 5
6a、56b・・・ヒータ用のスリップリング、57a
、57b・・・温度検出器用のスリップ9ング、 58
a、58b・・・ヒータ用の摺動プラン、393 w 
59i)・・・温度検出用の摺動ブラシ、40・・・制
御装置、41a、41b・・・温度制#器、42a、4
2b 一温度検出指示部。 第1図 第2図 第3図
The first factor is a vertical cross-sectional view showing an example of a heating mechanism of a conventional vacuum film forming apparatus, FIG. 2 is a vertical cross-sectional view showing an example of a conventional heating mechanism of this type, and FIGS. One embodiment is shown in which FIG. 3 is a partially cutaway front view, and FIG. 4 is an enlarged longitudinal sectional front view of a substrate holder and its attached members. 21...Vacuum chamber, 22...Substrate honoda, 25...
・Rotation axis of substrate hono νda, 27...Current introduction terminal, 2
9... Motor of substrate holder, 50a to 30i... Heater, 31a. 31b=...Temperature detector, 52a, 32b, 34a
, 34b--9-de for heater, 53a, 33b
, 35a, 35b - lead for temperature sensor, 5
6a, 56b...Slip ring for heater, 57a
, 57b...Slip ring for temperature sensor, 58
a, 58b...Sliding plan for heater, 393 w
59i)...Sliding brush for temperature detection, 40...Control device, 41a, 41b...Temperature controller, 42a, 4
2b - Temperature detection instruction section. Figure 1 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】[Claims] 真空槽内に基板ホルダを設置し、この基板ホルダなヒー
タ罠よシ加熱し1.基板ホルダを介して試料基板を加熱
しつつこの試料基板に膜を形成する真空成膜装置におい
て、前記基板ホルダの内部に、ヒータな基板ホルダの直
径方向に間隔をおいて複数個配列し、ヒータ列間に複数
個の温度検出器を配置し、前記ヒータと温度検出器の9
−ドを基板ホルダの回転軸の同郡を通して真空槽の外部
に導出するとともに、ヒータのリードを、各温度検出器
から入力する温度値に基づいて、当該温度検出器の近傍
のヒータを個別に温度制御する制御装置に接続したこと
を特徴とする真空成膜装置用の加熱機構。
Place the substrate holder in the vacuum chamber and heat the substrate holder using the heater trap.1. In a vacuum film forming apparatus that forms a film on a sample substrate while heating the sample substrate via a substrate holder, a plurality of heaters are arranged at intervals in the diameter direction of the substrate holder inside the substrate holder, and a plurality of heaters are arranged at intervals in the diameter direction of the substrate holder. A plurality of temperature detectors are arranged between the rows, and nine of the heaters and temperature detectors are arranged between the rows.
- leads to the outside of the vacuum chamber through the same part of the rotating shaft of the substrate holder, and connects the heater leads to the heaters near each temperature sensor individually based on the temperature value input from each temperature sensor. A heating mechanism for a vacuum film forming apparatus, characterized in that it is connected to a control device that controls temperature.
JP21401583A 1983-11-16 1983-11-16 Heating mechanism for appratus for forming film in vacuum Pending JPS60106968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21401583A JPS60106968A (en) 1983-11-16 1983-11-16 Heating mechanism for appratus for forming film in vacuum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21401583A JPS60106968A (en) 1983-11-16 1983-11-16 Heating mechanism for appratus for forming film in vacuum

Publications (1)

Publication Number Publication Date
JPS60106968A true JPS60106968A (en) 1985-06-12

Family

ID=16648857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21401583A Pending JPS60106968A (en) 1983-11-16 1983-11-16 Heating mechanism for appratus for forming film in vacuum

Country Status (1)

Country Link
JP (1) JPS60106968A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3534214A1 (en) * 1984-09-25 1986-04-03 Hiroshi Tokio/Tokyo Teramachi X-Y TABLE WITH LINEAR MOTOR DRIVE
US5231690A (en) * 1990-03-12 1993-07-27 Ngk Insulators, Ltd. Wafer heaters for use in semiconductor-producing apparatus and heating units using such wafer heaters
US5306895A (en) * 1991-03-26 1994-04-26 Ngk Insulators, Ltd. Corrosion-resistant member for chemical apparatus using halogen series corrosive gas
JP2017208374A (en) * 2016-05-16 2017-11-24 東京エレクトロン株式会社 Mounting stage system, substrate processing apparatus, and temperature control method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3534214A1 (en) * 1984-09-25 1986-04-03 Hiroshi Tokio/Tokyo Teramachi X-Y TABLE WITH LINEAR MOTOR DRIVE
US5231690A (en) * 1990-03-12 1993-07-27 Ngk Insulators, Ltd. Wafer heaters for use in semiconductor-producing apparatus and heating units using such wafer heaters
US5490228A (en) * 1990-03-12 1996-02-06 Ngk Insulators, Ltd. Heating units for use in semiconductor-producing apparatuses and production thereof
US5306895A (en) * 1991-03-26 1994-04-26 Ngk Insulators, Ltd. Corrosion-resistant member for chemical apparatus using halogen series corrosive gas
JP2017208374A (en) * 2016-05-16 2017-11-24 東京エレクトロン株式会社 Mounting stage system, substrate processing apparatus, and temperature control method

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