JPS60104247A - Device for measuring concentration of copper ion and chelate agent in chemical copper plating liquid - Google Patents

Device for measuring concentration of copper ion and chelate agent in chemical copper plating liquid

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Publication number
JPS60104247A
JPS60104247A JP59137117A JP13711784A JPS60104247A JP S60104247 A JPS60104247 A JP S60104247A JP 59137117 A JP59137117 A JP 59137117A JP 13711784 A JP13711784 A JP 13711784A JP S60104247 A JPS60104247 A JP S60104247A
Authority
JP
Japan
Prior art keywords
potential
cell
liquid
copper ion
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59137117A
Other languages
Japanese (ja)
Inventor
Hitoshi Oka
岡 齊
Kenji Nakamura
健二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59137117A priority Critical patent/JPS60104247A/en
Publication of JPS60104247A publication Critical patent/JPS60104247A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N31/00Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods
    • G01N31/16Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using titration
    • G01N31/162Determining the equivalent point by means of a discontinuity
    • G01N31/164Determining the equivalent point by means of a discontinuity by electrical or electrochemical means

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  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemically Coating (AREA)

Abstract

PURPOSE:To supply a titrating liquid to the 2nd cell if potential is above a specified value by collecting and mixing a chemical copper plating liquid and a titrating liquid, providing a conductive insoluble electrode coupled thereto and a reference electrode and measuring cell potential. CONSTITUTION:A chemical copper plating liquid and the 1st titrating liquid are collected from a plating cell 1 and the 1st titrating liquid 3 at the rate of 20ml/ h. Potentional is measured and the measured value is inputted to a device 8 for controlling concn. of copper ion. When the measured potential is lower than the set potential 0.2V, a solenoid valve 9-1 is opened and the copper ion is replenished into the plating liquid from a copper ion replenishing vessel 10. When the potential exceeds 0.2V, the valve 9-1 is closed and the replenishment is stopped. When the measured potential is higher then 0.43V, a solenoid valve 9-2 is opened and a chelate agent soln. is replenished to the plating cell from a chelate replenishing tank 14 and when the potential falls down to 0.43V or below, the valve 9-2 is closed and the mixed soln. emitted from a chelate agent 12 is discharged into a waste liquid tank 15. The concn. of the copper ion and chelate agent in the chemical copper plating liquid is thus adjusted with good accuracy.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明性、化学鋼めっき液中の銅イオン濃度キレート剤
濃度の測定装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a device for measuring copper ion concentration and chelating agent concentration in a chemical steel plating solution.

〔発明の背景〕[Background of the invention]

最近、プリント配線板は、化学銅めっきによシ絶縁基板
上に回路導体を設けて製造している。
Recently, printed wiring boards have been manufactured by providing circuit conductors on an insulating substrate by chemical copper plating.

この場合、回路導体であるめっき皮膜は、電気特性と機
械特性が良好であることが襄−求される。
In this case, the plating film serving as the circuit conductor is required to have good electrical and mechanical properties.

一般に化学鋼めっき液は、銅イオン、銅イオンのキレー
ト剤もしくは錯化剤、還元剤およびアルカリ金属の水酸
化物からなってい゛る。
Generally, a chemical steel plating solution consists of copper ions, a chelating agent or complexing agent for copper ions, a reducing agent, and an alkali metal hydroxide.

そして、化学鋼めっき液中の銅イオンはめっき反応によ
って消費され、キレート剤は被めりき体に付着して、無
視できない程度に槽外に持ち出され濃度が低下する。
Then, the copper ions in the chemical steel plating solution are consumed by the plating reaction, and the chelating agent adheres to the plated object and is carried out of the tank to a non-negligible extent, reducing its concentration.

なお、化学銅めっき皮膜の機械特性は、めっき液中の銅
イオン濃度、キレート剤もしくは錯化剤の濃度に著しく
影響を受ける。このため、これら成分の濃度管理が必要
となる・ 従来、化学鋼めっき液中の銅イオン濃度の測定は、比色
法で行なっていた。しかし比色法は、測定値がPH値、
銅イオン以外のイオンや化合物濃度およびめっき液中の
水素ガスなどに強く影響を受けて不正確であった。その
うえ、測定装置が高価であった。
Note that the mechanical properties of chemical copper plating films are significantly affected by the concentration of copper ions and the concentration of chelating agents or complexing agents in the plating solution. Therefore, it is necessary to control the concentration of these components. Conventionally, the concentration of copper ions in chemical steel plating solutions was measured using a colorimetric method. However, with the colorimetric method, the measured value is the PH value,
It was inaccurate because it was strongly influenced by the concentration of ions and compounds other than copper ions, and hydrogen gas in the plating solution. Moreover, the measuring equipment was expensive.

まだ、銅イオンのキレート剤はめっき反応で消費される
ものではないとして、濃度測定が行なわれていなかった
The concentration of the copper ion chelating agent had not yet been measured as it was not consumed in the plating reaction.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、上記した従来技術の欠点をなくシ、化
学銅めっき液中の銅イオン濃度、キレート剤濃度を精度
良く測定する装置を提供するにある。
SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the prior art described above and to provide an apparatus for accurately measuring copper ion concentration and chelating agent concentration in a chemical copper plating solution.

〔発明の概要〕[Summary of the invention]

化学鋼めっき液をめりき槽から採取する手段滴定液を採
取する手段、前記の採取しためっき液と滴定液を混合す
る手段、−のm合手段に結合された白金電極と参照電極
を備えた第1のセル、このセルで測定された電位を測定
する手段前記第1のセルに結合された白金電極と参照電
極を備えた第2のセルと、前記第1のセルと前記第2の
セル間に設けられた前記第2のセルに滴定液を供給する
手段からなることを特徴とする化学銅めっき液中の銅イ
オンとキレート剤濃度測定装置で達成される。
A means for collecting a chemical steel plating solution from a plating tank, a means for collecting a titrant solution, a means for mixing said sampled plating solution and a titrant solution, and a platinum electrode and a reference electrode coupled to a mixing means. a first cell, a second cell comprising a platinum electrode and a reference electrode coupled to said first cell, means for measuring the potential measured in said cell; said first cell and said second cell; This is achieved by an apparatus for measuring the concentration of copper ions and chelating agent in a chemical copper plating solution, which comprises means for supplying a titrant to the second cell provided between the two cells.

以下に、本発明の測定原理を説明する。キレート剤であ
るエチレンジアミン四酢酸(以後EDTAと略記)、エ
チレンジアミン五酢酸(以後gDPAと略記)と、二価
の銅イオンは1:1のモル濃度比で反応する。この反応
がキレート生成反応であり、反応生成物が銅のキレート
化合物である。
The measurement principle of the present invention will be explained below. Chelating agents ethylenediaminetetraacetic acid (hereinafter abbreviated as EDTA) and ethylenediaminepentaacetic acid (hereinafter abbreviated as gDPA) react with divalent copper ions at a molar concentration ratio of 1:1. This reaction is a chelate-forming reaction, and the reaction product is a copper chelate compound.

今、化学鋼めっき液中の銅イオン濃度を0モル、キレー
ト剤のモル濃度をル倍のn0モルとすれば(一般に、キ
1)−ト剤は鋼イオン濃度の1.5〜5倍加える)、二
価鋼イオンは完全にキレート化される。そして、白金、
金などの不溶性の主電極と、参照電極を用いて、めっき
液に微量存在する一価鋼イオン(以後Ou ’と略記)
、と二価鋼イオンのキレート化合物(以後CU■と略記
)との間の電位を測定すると(1)式のようになる0 ・・・・・・・・・(1) (但し、(1)式中にはCu■とBDTA間の安定度定
数、[:OuI]はめりき液中のOulのモル濃度であ
る) 上記(1)式の濃度関係にある化学銅めっき液に、三価
鉄イオン(以後Femと略記)を加えた場合を考える。
Now, if the copper ion concentration in the chemical steel plating solution is 0 mol and the chelating agent's molar concentration is n0 mol (generally, 1), then the chelating agent is added 1.5 to 5 times the steel ion concentration. ), the divalent steel ions are completely chelated. And platinum,
Using an insoluble main electrode such as gold and a reference electrode, monovalent steel ions (hereinafter abbreviated as Ou') present in trace amounts in the plating solution are detected.
, and a chelate compound of divalent steel ions (hereinafter abbreviated as CU■), the potential is expressed as in equation (1).0......(1) (However, (1 ) In the formula, the stability constant between Cu■ and BDTA, [:OuI] is the molar concentration of Oul in the plating solution. Consider the case where ions (hereinafter abbreviated as Fem) are added.

三価鉄イオンは、キレート剤と極めて安定なキレート化
合物を形成する・これは、多くの二価金属イオンよシ安
定である。従って、Femの添加量が0uIIとキレー
ト剤との磯度差である(FL−1)0モルを少し越える
と、キレート化していだ0uIIはキレ−1・剤から解
離して、遊離のCu■を生成する。そして、上記と同じ
電極で□uTIと011間の電位を測定すると(2)式
のようになるO ・・・・・・・・・(2) FeIIの泳加量がキレート剤濃度(rLoモル)を少
し越えると、遊離のFe1IIが存在することになり、
めっき液中に微量存在する二価鉄イオン(以後F−と略
記)との間の電位を、前記と同じ電極で測定すると(3
)式のようになる。
Trivalent iron ions form extremely stable chelate compounds with chelating agents, which are more stable than many divalent metal ions. Therefore, when the amount of Fem added slightly exceeds 0 mol (FL-1), which is the difference in hardness between 0uII and the chelating agent, the chelated 0uII dissociates from the chelating agent and becomes free Cu generate. Then, when the potential between □uTI and 011 is measured using the same electrode as above, the equation (2) is obtained. ), free Fe1II is present,
When the potential with the divalent iron ion (hereinafter abbreviated as F-) present in a trace amount in the plating solution is measured using the same electrode as above, (3
) is as follows.

・・・・・・・・・ 3 すなわち、電位がE(1)からE(2)に変化したとき
の全Fe重量は、全遊離キレート剤の量(rL−1)0
モルに等しい。
......3 That is, the total Fe weight when the potential changes from E(1) to E(2) is the amount of total free chelating agent (rL-1)0
Equal to moles.

そしてFemが、すべてのキレート剤とキレート化合物
を形成するのに必要な量(m 0モル)から全キレート
剤濃度がわかり、これから上記の(rL−1)0モルを
引いた値が全CuII#度と力る0 〔発明の実施例〕 以下、本発明を実施例を用いて詳細に説明するO 実施例1 1、 めっき液の組成とめっき条件 CuSO4・5H20・・・・・・・・・・・・14f
EDTA−2Nα ・・・・・・・・・・・・41.5
 fNαOH・・・・・・・・・・・・12237%ホ
ルマリン ・・・・・・・・・・・・ 10rnt添加
量 ・・・・・・・・・少量 水 ・・・・・・・・・全体を1tとする量めっき温度
 70°C めっき面積 1drr?/l めっき速度 2.5μ/h サンプリング速度 20扉t/h ■ 滴定液組成と滴定条件 滴定液組成 Fe013 18.1 ?HO110mt 水・・・・・・全体を1Lとする量 第1回目の滴定条件 設定電位 +028■ 主を極 0.5@白金線 参照電極 飽和甘木電極 滴定速度 20扉t/h 第2回目の滴定条件 設定゛電位 +〇、54V 主電極 0.37白金線 参照電極 飽和千木電極 滴定速度 20rnt/h 前記めっき液と前記滴定液を、それぞれ多連チューブポ
ンプ2で20扉t/hの割合でめりき槽1と第1滴定槽
3から採取した。この両液は、T字管4−1で混合した
。ついでこのm合液を白金電&6−1と飽和甘木電極5
−1をそなえた銅・rオン検出セルフに入れ、電極電位
を測定した。この測定電位は、銅イオ7vIk度制御装
置8へ入力した。この入力が設定電位0.28Vよシ低
いと、電磁弁9−1(1iL磁弁のかわシに、補給用ポ
ンプを用いても良い)が開き、銅イオン補給槽10から
銅イオン溶液がめつき槽に補給された。入力が0.28
Vより高くなると、電磁弁6が閉じて補給が中止された
Then, the total chelating agent concentration is determined from the amount (m 0 mol) required for Fem to form a chelate compound with all the chelating agents, and the value obtained by subtracting the above (rL-1) 0 mol from this is the total CuII # [Examples of the Invention] The present invention will be explained in detail below using Examples.Example 1 1. Composition of plating solution and plating conditions CuSO4.5H20... ...14f
EDTA-2Nα ・・・・・・・・・41.5
fNαOH・・・・・・・・・12237% formalin ・・・・・・・・・10rnt addition amount ・・・・・・・・・Small amount of water ・・・・・・・・・・Plating temperature 70°C Plating area 1 drr? /l Plating speed 2.5 μ/h Sampling speed 20 doors t/h ■ Titrant composition and titration conditions Titrant composition Fe013 18.1 ? HO110mt Water...Amount to make the whole 1L First titration condition setting potential +028 ■ Main electrode 0.5 @ platinum wire reference electrode Saturation Amagi electrode titration rate 20 doors t/h Second titration Condition setting゛Potential +〇, 54V Main electrode 0.37 platinum wire reference electrode Saturated Chigi electrode Titration rate 20rnt/h The above plating solution and the above titration solution were each pumped into a multiple tube pump 2 at a rate of 20 doors t/h. Samples were taken from the plated tank 1 and the first titration tank 3. Both liquids were mixed in a T-tube 4-1. Next, apply this m mixture to Platinum &6-1 and saturated Amagi electrode 5.
-1, and the electrode potential was measured. This measured potential was input to the copper ion 7vIk degree control device 8. When this input is lower than the set potential of 0.28V, the solenoid valve 9-1 (a replenishment pump may be used to replace the 1iL solenoid valve) opens, and the copper ion solution from the copper ion replenishment tank 10 is deposited. The tank was replenished. input is 0.28
When it became higher than V, the solenoid valve 6 was closed and replenishment was stopped.

銅イオン検出セルフを出たm合液は、多連チューブポン
プ2で20 mA / Aの割合で第2滴定槽11から
採取した前記滴定液とT字管4−2で混合した。この混
合液は、白金電極6−2と飽和甘木電極5−2をそなえ
たキレート剤検出セル12に入れ、電極電位を測定した
、測定電位はキレート剤制御装置13へ入力した。この
人カtキレート剤制御装置の設定電位の0.54Vよシ
高い場合、電磁弁9−2が開いて、キレート剤補給槽1
4から、キレート剤溶液がめりき槽1に補給され、0.
54Vよセ低くなりたとき、電磁弁9−2が閉じて補給
が中止された。キレート剤検出セル12を出たm合液は
、廃液槽15に排出した。
The m mixture that came out of the copper ion detection self was mixed with the titrant liquid collected from the second titration tank 11 at a rate of 20 mA/A using the multiple tube pump 2 through the T-tube 4-2. This mixed solution was placed in a chelating agent detection cell 12 equipped with a platinum electrode 6-2 and a saturated Amagi electrode 5-2, and the electrode potential was measured.The measured potential was input to the chelating agent control device 13. If this person's electric potential is higher than the set potential of the chelating agent control device by 0.54V, the solenoid valve 9-2 opens and the chelating agent supply tank 1
From 0.4, the chelating agent solution is replenished into the plating tank 1.
When the voltage dropped to 54V, solenoid valve 9-2 closed and replenishment was stopped. The m mixture that came out of the chelating agent detection cell 12 was discharged into a waste liquid tank 15.

濃度管理は100時間にわたって連続的に行なった。そ
の間、銅イオン濃度、キレート剤濃度を別途化学分析で
間けつ的に行ない、不法の分析精度をチェックしたとこ
ろ、±5チの分析精1屍であった・ 実施例2 ■ めっき液の組成とめつき条件 実施例1の■と同様 ■ 第1滴定液組成と滴定条件 滴定液組成 011804 ・5HzU 14.0f)
12804 5.0m4 水・・・・・・全体を1Lとする量 滴定条件 設定電位 +〇、2■ 主電極 05z白金線 参照電極 飽和甘木電極 滴定速度 207/A ■ 第2滴定液組成と滴定条件 滴定液組成 Fe0t318.3 y HCL 10m1 水・・・・・・全体を1tとする量 滴定条件 設定電位 +〇、43V 主電極 0,3Z白饋 参照電極 飽和甘木電極 滴定速度 20d/A 前記めっき液と第1滴定液を、それぞれ多連チューブポ
ンプ2で20m1/んの割合でめっき槽1と第1滴定槽
3から採取した。その後は実施例1と同様にして電位を
測定した。この測定電位は、銅イオン濃度制御装置8へ
入力した。
Concentration control was carried out continuously for 100 hours. During that time, the copper ion concentration and chelating agent concentration were separately chemically analyzed intermittently to check the accuracy of the illegal analysis, and it was found that there was one body of analytical particles with ±5 cm.Example 2 ■ Determination of the composition of the plating solution Conditions Same as ■ in Example 1 ■ First titrant composition and titration conditions Titrant composition 011804 ・5HzU 14.0f)
12804 5.0m4 Water... Volume to make the whole 1L Titration condition setting potential +○, 2■ Main electrode 05z platinum wire reference electrode Saturated Amagi electrode titration rate 207/A ■ Second titrant composition and titration conditions Titrant composition: Fe0t318.3 y HCL 10ml Water: 1 ton as a whole Titration conditions: Set potential: +〇, 43V Main electrode: 0.3Z white rice reference electrode: Saturated Amagi electrode Titration rate: 20d/A The above plating solution and the first titrant were collected from the plating tank 1 and the first titration tank 3 at a rate of 20 ml/liter using the multiple tube pump 2, respectively. Thereafter, the potential was measured in the same manner as in Example 1. This measured potential was input to the copper ion concentration control device 8.

この入力が設定電位020vよシ低いと、電磁弁9−1
が開き、銅イオン補給4W10から銅イオンがめつき液
に補給された一人力が0.20Vよシ高くなると、電磁
弁6が閉じて補給が中止された銅イオン検出セルフを出
た混合液は、多連チューブポング2で20mj/Aの割
合で第2滴定槽11から採取した第2滴定液とT字管4
−2で混合しだ・その後は実施例1と同様にして電位を
測定した。測定電位は、キレート剤制御装置へ入力した
。この入力がキレート剤制御装置の設定電位の0.45
Vよシ高い場合、電磁弁9−2が開いて、キレート剤補
給槽14から、キレート剤溶液がめりき槽に補給され、
o、4sVよシ低くなりたとき、電磁弁9−2が閉じて
補給された。
If this input is lower than the set potential of 020V, the solenoid valve 9-1
opens, and when the power of copper ions supplied to the plating solution from the copper ion supply 4W10 becomes higher than 0.20V, the electromagnetic valve 6 closes and the supply is stopped.The mixed solution exiting the copper ion detection self is The second titrant liquid collected from the second titration tank 11 at a rate of 20 mj/A with the multiple tube pump 2 and the T-tube 4
Mixing was started at -2 and then the potential was measured in the same manner as in Example 1. The measured potential was input to the chelating agent control device. This input is 0.45 of the set potential of the chelating agent control device.
When the voltage is higher than V, the solenoid valve 9-2 opens and the chelating agent solution is replenished from the chelating agent replenishing tank 14 to the plating tank.
When the voltage became as low as 4 sV, the solenoid valve 9-2 was closed and replenishment was performed.

キレート剤検出セル12を出たα合液は、廃液槽15に
排出した。
The α mixture liquid that came out of the chelating agent detection cell 12 was discharged into a waste liquid tank 15.

なお第2滴定液を10時間毎に間けつ的に加えれば、こ
の液を加えていない時のめつき液は再利用できる。
Note that if the second titrant solution is added intermittently every 10 hours, the plating solution when this solution is not added can be reused.

濃度管理を50時間にわたって行ない、実施例。An example in which the concentration was controlled for 50 hours.

1と同じ分析精度であった。The analysis accuracy was the same as that of 1.

〔発明の効果〕〔Effect of the invention〕

以上述べたように、本発明によれば、化学鋼めっき液中
の銅イオン濃度、キレート剤濃度を精度良く調整できる
。また、連続的に自動制御できる。
As described above, according to the present invention, the copper ion concentration and the chelating agent concentration in the chemical steel plating solution can be adjusted with high precision. It can also be continuously and automatically controlled.

【図面の簡単な説明】[Brief explanation of the drawing]

図は化学銅めりき液の゛銅イオン、キレート剤の自動濃
度管理装置の構成図である。 1・・・・・・めりき槽 3・・・・・・第1滴定液 5−1.5−2・・・・・・飽和甘木電極6−1.6−
2・・・・・・白金電極 7・・・・・・銅イオン検出セル 8・・・・・・銅イオン濃度制御装置 10・・・・・・銅イオン補給槽 11・・・・・・第2滴定液 12・・・・・・キレート剤検出セル 13・・・・・・キレート剤制御装置 14・・・・・・キレート剤補給槽
The figure is a configuration diagram of an automatic concentration control device for copper ions and chelating agents in a chemical copper plating solution. 1...Metalized tank 3...First titrant 5-1.5-2...Saturated Amagi electrode 6-1.6-
2...Platinum electrode 7...Copper ion detection cell 8...Copper ion concentration control device 10...Copper ion supply tank 11... Second titrant 12...Chelating agent detection cell 13...Chelating agent control device 14...Chelating agent supply tank

Claims (1)

【特許請求の範囲】[Claims] 化学鋼めっき液をめりき槽から採取する手段、滴定液を
採取する手段、前記の採取しためつき液と滴定液をm合
する手段、このa合手段に結合された導電性の不溶性電
極と参照電極を備えた第1のセル、このセルで測定され
た電位を測定する手段、前記第1のセルに結合された導
電性の不溶性電極と参照電極を備えた第2のセルと、前
記第1のセルと前記第2のセル間に設けられた、前記第
2のセルに滴定液を供給する手段からなることを特徴と
する化学銅めっき液中の銅イオンとキレート剤濃度測定
装置。
A means for collecting a chemical steel plating solution from a plating tank, a means for collecting a titrant solution, a means for combining the sampled plating solution and a titrant solution, a conductive insoluble electrode coupled to the combining means; a first cell comprising a reference electrode, means for measuring the potential measured in the cell, a second cell comprising an electrically conductive insoluble electrode coupled to said first cell and a reference electrode; 1. An apparatus for measuring copper ion and chelating agent concentration in a chemical copper plating solution, comprising means for supplying a titrant to the second cell, which is provided between the first cell and the second cell.
JP59137117A 1984-07-04 1984-07-04 Device for measuring concentration of copper ion and chelate agent in chemical copper plating liquid Pending JPS60104247A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59137117A JPS60104247A (en) 1984-07-04 1984-07-04 Device for measuring concentration of copper ion and chelate agent in chemical copper plating liquid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59137117A JPS60104247A (en) 1984-07-04 1984-07-04 Device for measuring concentration of copper ion and chelate agent in chemical copper plating liquid

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6333777A Division JPS53149389A (en) 1977-06-01 1977-06-01 Measurement method of copper ions and chelating agent concentration in chemical copper plating solution

Publications (1)

Publication Number Publication Date
JPS60104247A true JPS60104247A (en) 1985-06-08

Family

ID=15191222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59137117A Pending JPS60104247A (en) 1984-07-04 1984-07-04 Device for measuring concentration of copper ion and chelate agent in chemical copper plating liquid

Country Status (1)

Country Link
JP (1) JPS60104247A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1634069A2 (en) * 2003-06-13 2006-03-15 Eugene Shalyt Measurement of complexing agent concentration in an electroless plating bath

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1634069A2 (en) * 2003-06-13 2006-03-15 Eugene Shalyt Measurement of complexing agent concentration in an electroless plating bath
JP2007517186A (en) * 2003-06-13 2007-06-28 シャーリット,ユージン Measurement of complexing agent concentration in electroless plating bath
EP1634069B1 (en) * 2003-06-13 2008-11-19 Eugene Shalyt Measurement of complexing agent concentration in an electroless plating bath

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