JPS6010408A - Production of thin film magnetic head - Google Patents

Abstract

PURPOSE:To obtain a thin film head superior in corrosion resistance and mechanical strength even if a thick conductor in an electrode part is formed in the electro-forming method, by using an inorganic insulator or a metal having a low hydrogen deposition potential as shielding materials. CONSTITUTION:A head element is formed on a ceramic substrate, and an electrode part leading-out conductor 9 and the first protection film 10 are formed in the electrode part. After a foundation film 11 for power supply is accumulated, cromium which is a metal having a low hydrogen generating potential is accumulated by sputtering for the purpose of protecting the part where deposition is unnecessary to form a shielding film 17. The electrode part of this shielding film 17 is removed by etching to expose the foundation film 11 for power supply 11. In this state, when copper is precipitated by electro-gorming, a conductor 13 having a specific thickness is formed only in the electrode part. Thereafter, the conductor 13 is used as a mask material to remove parts other than the electrode part, and an inorganic protection film 14 is formed on this conductor 13 by sputtering, and the surface is worked mechanically to expose said conductor 13, thus completing the electrode part.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method of manufacturing a thin film magnetic head (hereinafter referred to as a "thin film head"), and particularly relates to a method of manufacturing a thin film magnetic head (hereinafter referred to as "thin film head"), and in particular, to
- This invention relates to a method for manufacturing a thin film head formed by loforming.

[Background of the invention]

The electrode portion of the thin film head requires a conductor for connecting the bonding pad and the head element, and a metal such as copper, silver, or gold having a low resistance value is used for this conductor. Since the above-mentioned conductor requires a film thickness of 30 to 40 μm, the ELEC (-LOB 2Y-ming method), which can form a thick film at high speed and at low cost, is used for its formation.

Further, an inorganic protective film with a thickness of about 30-μm is formed on the surface of the thin-film head in order to protect the element and improve flying characteristics of the head.

Figure 1 shows an example of the structure of a thin film head, and Figures 2 to 4 show an example of the structure of a thin film head.
The details of the electrode portion are shown in cross-sectional views in the figures. Hereinafter, an outline of the conventional thin film head manufacturing method will be explained based on the above-mentioned drawings.

First, a flat base film 2 made of an inorganic insulator is formed on the entire surface of a ceramic substrate 1 by sputtering. next,
A film with a thickness of 2 μm is formed on the base film 2 by sputtering as well.
After depositing a certain amount of permalloy, a pattern is formed by photoetching to form the lower magnetic film 3. Next, an inorganic insulating film having a thickness of about 1 μm is deposited by sputtering, and then a pattern is formed by photoetching to form the gap spacer 4.

Next, the organic and inorganic insulating films are patterned to form the first insulating film 5. Next, aluminum (AI).

After depositing a low-resistance metal such as copper (Cu) or gold (Au) by sputtering, the conductor coil 6 is patterned by photoetching to have a line width of 5 to 10 μm and a line spacing of 3 to 6 μm. Next, a second insulating film 7 is formed by a process similar to that of forming the first insulating film 5. Thereafter, permalloy with a thickness of about 2 μm is deposited by sputtering, and then patterned by photoetching to form the upper magnetic film 8.

-''-Note-1 When forming the partially imposed film 8', a joint portion with the conductor coil 6 is provided, and a pattern of the conductor 9 for leading out the electrode portion from the head element is formed at the same time. Next, a first protective film 10 is formed to protect the head element from the chemicals used in the second step of "roforming to Ellen 1". Thereafter, as shown in detail in FIG. 2, a conductive base film 11 for performing Ellen 1-roforming is deposited by sputtering or vapor deposition, and a resist film 12 is patterned to form a predetermined electrode pattern. do.

The thickness of the resist film 12 depends on the type of head element, but is generally about 3 to 10 μm.

After electroforming the conductor 13 in this state, the unnecessary resist film 12 is removed and the protective film 1
A thin film head can be obtained by depositing 4 and machining its surface and connecting it with a bonding pad.

The problem here is that when electroforming the conductor 13, if the thickness of the conductor 13 exceeds the thickness of the resist film 12, precipitation will proceed not only in the thickness direction but also in the horizontal direction. It is to be. When the conductor 13 has been deposited to a thickness of about 30 to 40 μm as described above, the dimension of the horizontal overhang portion also becomes about 20 to 10 μm. For this reason, resist film 1
After removing 2, the height is 3~10μrn and the width is 20~
This means that a gap of about 40 μm is created. If the gap has this size, - when depositing the protective film 14 on the conductor 13 by sputtering, it will not be possible to completely cover the gap as shown in FIGS. 3 and 4. , since cavities 15 and cracks 16 are formed in the protective film 14,
This results in a problem that the corrosion resistance of the electrode portion is significantly reduced.

To solve this problem, it has been proposed to use a special sputtering method to prevent the formation of the cavity 15 or crank 16, but currently there are other problems such as poor mechanical strength. It has not been put into practical use.

[Purpose of the invention]

The present invention has been made in view of the above circumstances, and its purpose is to solve the above-mentioned problems in the conventional thin-film head manufacturing method, and to form a thick conductor in the electrode portion by electroforming. It is an object of the present invention to provide a method for manufacturing a thin film spatula 1- which does not produce cavities or cranks in the overhang portion even when formed by the method (Q) and has excellent corrosion resistance and mechanical strength.

[Summary of the invention]

The main point of the present invention is that the conductor of the electrode part is
In the method of manufacturing a thin film head formed by a heating process, an inorganic insulator or a metal having a low hydrogen deposition potential is used as a shielding material in the electrowarming process.

[Embodiments of the invention]

Hereinafter, embodiments of the present invention will be explained based on the drawings.

FIGS. 5 to 9 are cross-sectional views showing essential parts of the manufacturing process of the electrode portion of a thin film head according to an embodiment of the present invention. In each figure, symbols 2, 9 to 11, 13 and 14 refer to figures 1 to 4.
The same components as shown in the figure are shown, and 17 indicates a shielding film.

First, as shown in FIG. 5, a spatula element is formed on a ceramic substrate as in the conventional method, and a conductor 9 for leading out the electrode part and a first protective film 10 are formed on the electrode part. Next, after depositing a base film 11 for conduction during electro-I-roforming, chromium (Cr), which is known as a metal with a low hydrogen deposition potential, is deposited by sputtering to protect areas where deposition is not required. A Wl shielding film 17 is formed.

Next, as shown in FIG. 6, the electrode portion of the shielding film 7 is removed by etching to expose the current-carrying base film 11. In this state, copper (
When Cu) is deposited, a conductor 13 having a thickness of 30 to 40 .mu.In is formed only at the electrode portion, as shown in FIG. Thereafter, using the conductor 13 as a mask material, etching techniques are used to remove the shielding film 17 and the current-carrying base film 11 other than the electrode portion.
remove. Next, as shown in FIG. 8, an inorganic protective film 14 is formed on the conductor 13 by sputtering, and the surface thereof is machined as shown in FIG. 9 to expose the conductor 13 and form an electrode portion. Complete.

According to the method shown in this example, Ellen 1-Loff I
--The shielding film 17 used when performing the mixing remains on the electrode part after fulfilling its shielding effect, and does not create cavities or cracks in the protective film 14 unlike conventional resist films, so it has mechanical strength. is high and.

Surface 1 Excellent corrosion resistance 11. It is possible to form an electrode section that has a different shape.

In the above embodiment, the material of the shielding film 17 is black A.
(Cr) was used, but it goes without saying that other metals with a low hydrogen deposition potential, such as molybdenum (Mo), titanium (Ti), or tungsten (W), may also be used. It goes without saying that an inorganic insulator may be used instead of a metal having a low hydrogen deposition potential such as a metal.

〔Effect of the invention〕

As described above, according to the present invention, in the method for manufacturing a thin film head in which the conductor of the electrode portion is formed by an electroforming process, an inorganic insulator or a metal with a low hydrogen deposition potential is used as a shielding material in the electroforming process. By using the above method, it is possible to realize a method for manufacturing a thin film head that makes it possible to manufacture a thin film head with excellent corrosion resistance and mechanical strength.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view showing an example of the structure of a thin film head, FIGS. 2 to 4 are cross-sectional views showing the manufacturing process of the electrode part, and FIGS. 5 to 9 are one embodiment of the present invention. FIG. 3 is a cross-sectional view showing the main parts of the manufacturing process. 1: ceramic substrate, 2: base film, 3: lower magnetic film. 4: Gap spacer, 5: First insulating film, 6: Conductor coil, 7: Second insulating film, 8: Upper magnetic film, 9: Conductor for leading out the electrode part, 10: First protective film, ■ll For reverse current conduction Base film 1
3: Conductor, 14: Protective film, ]7: Shielding film. Figure 1 Figure 2] Figure 3 Figure 4 Figure 4 Figure 5 Figure 6] Figure 7 Figure 3 Figure 8 Figure 9

Claims (1)

[Claims] A method of manufacturing a thin film magnetic head in which a conductor of an electrode part is formed by an electroforming process, characterized in that an inorganic insulator or a metal with a low hydrogen deposition potential is used as a shielding material in the electroforming process. manufacturing method.