JPS60100676A - Formation of deposited film - Google Patents

Abstract

PURPOSE:To form easily a deposited film contg. silicon atoms having good quality on a base in a deposition chamber by applying excitation energy in the deposition chamber to a silane compd. contg. a substituent consisting of C, H, halogen atoms, etc. in a gaseous state. CONSTITUTION:A silicon compd. which is a silane compd. bound with >=2 silicon atoms, has at least one substituent expressed by the general formula -CaHbXc (where a; positive integer, b, c; 0 or positive integers, b+c=2a+1, X; halogen atom), contains at least either one of hydrogen atom and halogen atom and of which at least one of the silicon atoms at both ends is bound with either one of at least either of the hydrogen atom and halogen atom in addition to the bond with the silicon atom is made into a gaseous state by an evaporating device 2 and is introduced through a mass flow meter 3 from a raw material introducing pipe 1 into the deposition chamber of a device A for forming a deposited film. The above-mentioned compd. is decomposed by light, heating, glow discharge, etc. to form the deposited film of amorphous silicon on a base 7 which is an Al cylinder.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a deposited film forming method for forming a photoconductive film, a semiconductor film, or an insulating film on a predetermined support using electrical, optical, or thermal energy. It is.

Conventionally, SiL + 5i2Ha + S3, Mo Si
Silane gas such as H2→4° (-8iL + s + S iL +a) is decomposed by excitation energy such as light or thermal energy to form an a-8i film on the support.

However, these series of silane compounds have the problem that they are explosively combusted by oxygen in the air and are extremely difficult to handle.

The present invention aims to solve the above-mentioned problems and to find a raw material gas whose decomposition energy is equivalent to the molecular J↑ energy of conventional silane gas.

The purpose of the pond of the present invention is to be able to produce a high-quality deposited film that ensures uniformity of electrical and optical properties and stability of quality even when forming a large-area, thick deposited film. The purpose is to provide a method.

The purpose of this invention is to provide a silane compound having two or more bonded silicon atoms, which has the general formula -CaHbXc (
However, a is a positive integer, and b.

C is not 0 at the same time, 0 or a positive integer, b+c=2
a+1, X is a halogen atom), and contains at least one of a hydrogen atom and a halogen atom, and at least one of the silicon atoms at both ends is , a silane compound (SiA
) was found to be achieved by using.

That is, the present invention provides a method in which a silane compound (SiA
) is introduced in a gaseous state and the gas is irradiated with light, thermal energy, etc. to form a deposited film on a support fixed in the deposition chamber.

The method of the present invention will be explained in detail below with reference to FIG.

A silane compound (SiA) is gasified in a vaporizer 2 through an introduction pipe 1, and introduced into a deposition chamber under normal pressure or reduced pressure through a mass flow meter 3. Silane compound (SiA) introduced into the deposition chamber under gas conditions
is subjected to photodecomposition, thermal decomposition, and discharge decomposition by light, heating, glow discharge, etc., and a photoconductive film of ga-8t is formed on a predetermined support 7 made of, for example, an aluminum cylinder.

In this example, the explanation has been limited to an example of forming a photoconductive film for a photoreceptor drum, but the present invention is of course not limited to this, and can also be applied to the formation of various other deposited films. 0 The silane compound (SiA
) is more preferably 2 to obtain a high quality a-3t film in which the number of silicon atoms is limited to 2 to 6.
~5 pieces, optimally 2-4 pieces. Number of silicon atoms is 7
However, contrary to expectations, the quality of the photoconductive film and semiconductor film is inferior, and the Q. It was found that there were many defects in the film and disturbances in the bulk, resulting in a non-uniform film. Therefore, if such a raw material gas is used, it is difficult to control the production of the deposited film.

Desirably, the total number of carbon atoms of all substituents (4) contained in the silane compound (SiA) used in the present invention is 1 to 11. It is. The number is preferably 1 to 5, and most preferably 1 to 3. When the total carbon number is 12 or more, it becomes difficult to gasify the silane compound (siA). Furthermore, it becomes difficult to synthesize a silane compound (SiA). Another problem arises that the decomposition efficiency of the silane compound (SfA) decreases. Available substitutions (
Taking the example of 4), s C'Hs-CtHs, CFs,
C = CFHt,' -CH2CHt C, CHtC
HCHs, -CHI CH2-CHt CH, etc.

In the silane compound (SiA), the substituent has a higher bond energy than the hydrogen atom, and prevents the silicon atom from being oxidized by oxygen.
iA) is stabilized against oxygen.

The silane compound (SiA 2 ) in the present invention contains a hydrogen atom or a halogen atom as a substituent other than substituent (4). Halogen atoms are fluorine atoms [F],
A chlorine atom (C4) is preferred.

In the silane compound (SiA) of the present invention, at least one of the silicon atoms at both ends is bonded to at least one of a hydrogen atom and an I/Rogge atom, in addition to the bond with silicon. Because of this, it is easily thermally decomposed into
Xt (X:].rogen atom) radicals are generated, and a high-quality a-8i film can be deposited. Examples of silane compounds (SiA) suitable for thermal decomposition include &5iSiHt(CHs) ('1)
(CL)z (A 2 ))IaSiSi(CHs)s
(', 3)I(ssisiHzstPL(C
Ha) (s 4 )几5iSiLStH(CHa)z
(Todoroki 5)LSiStHzSi(CHs)s ('
6) LSiSiH(CL)Si(CL)-(A7
) HllSiSi(CHs)tsi(CHs)s (A
8) LSiSiH(CHa)SiL(CH=) (
A9)H,5iSiH(CHa)SiH(CI(s
)t (A 10 )Ha S i S I H2S
iS iL (CHs) (Mu11) H3SiS
iHzSiLSi, H(CHs)t (' 12 )L
SiSiHzSiLSi (CH3)5 (屓13)H
sSiSi(CIL)psi(CHs)zsi(CL)
a (A 14 ), etc.

The above-mentioned silane compound (SiA) is an example in which a high-quality A-8T film can be deposited in a thermal decomposition method, but in a glow discharge decomposition method, an example in which carbon may be included in the film is used. It can be used as a raw material gas for photographic materials.

Examples will be described below.

Example 1 Using the apparatus shown in FIG.
Ha 5izHa (Pipe 1 using -8iL 'js
The mixture was vaporized in a vaporizer 2 through a mass flow meter 3, the flow rate was adjusted to 150 secMK, and the mixture was introduced into a deposited film forming apparatus A. Internal pressure 0. The raw material gas, which had been reduced to I Torr, was flowed onto the M support drum 7 heated to a predetermined temperature, and a photoconductive film of A-8I was formed on the At support drum 7 by thermal decomposition.

Table 1 shows the formation temperature of the deposited film, the deposition rate, the electrical properties of the film, and the stability of the raw material gas against air at room temperature.

Example 2 Using the same raw materials as in Example 1, a support drum made by A, A, which was introduced into the deposited film forming apparatus A in the same manner as in Example 1, was heated to 250°C, and the gas flow rate was set at 150 secM. ,
Internal pressure 0. I Torr, generate a glow discharge, and a
A deposited film of -8i was prepared. Table 2 shows a comparison of deposition rates and electrical characteristics for each source gas.

[Brief explanation of the drawing]

FIG. 1 schematically shows an apparatus for producing a deposited film on a photosensitive drum according to the method of the present invention. 1: Raw material introduction pipe 2: Vaporizer 3: Mass flow meter 4: Mixed gas introduction pipe 5: Heating conductor and ground 6: Conductor 7: Photoreceptor drum 8: Deposition chamber exhaust port 9: Deposition chamber pressure sensor

Claims (1)

[Claims] A silane compound in which two or more silicon atoms are bonded, and has the general formula -〇aHbXc (where a is a positive integer, b
, c is 0 or a positive integer, b + c = 2a + 1, X is a halogen atom),
and contains at least one of a hydrogen atom and a 210-gen atom, and at least one silicon atom at both ends.
In this method, a silane compound that is bonded not only to silicon atoms but also to at least one of hydrogen atoms and nitrogen atoms is introduced into the deposition chamber in a gas state, and excitation energy is given to the gas to deposit the compound. A method for forming a deposited film characterized by forming a deposited film containing silicon atoms on a support placed indoors.