JPS5994883A - Coating composition for semiconductor substrate - Google Patents
Coating composition for semiconductor substrateInfo
- Publication number
- JPS5994883A JPS5994883A JP57206652A JP20665282A JPS5994883A JP S5994883 A JPS5994883 A JP S5994883A JP 57206652 A JP57206652 A JP 57206652A JP 20665282 A JP20665282 A JP 20665282A JP S5994883 A JPS5994883 A JP S5994883A
- Authority
- JP
- Japan
- Prior art keywords
- coating composition
- junction
- semiconductor substrate
- heat treatment
- organic solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000008199 coating composition Substances 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 title claims abstract description 13
- 239000002019 doping agent Substances 0.000 claims abstract description 10
- 239000003960 organic solvent Substances 0.000 claims abstract description 9
- 150000002148 esters Chemical class 0.000 claims abstract description 7
- 150000003609 titanium compounds Chemical class 0.000 claims abstract description 5
- 150000004985 diamines Chemical class 0.000 claims abstract description 4
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 3
- 125000005594 diketone group Chemical group 0.000 claims abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052796 boron Inorganic materials 0.000 claims abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract 3
- 239000011574 phosphorus Substances 0.000 claims abstract 3
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 11
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 9
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 abstract description 4
- 238000007598 dipping method Methods 0.000 abstract description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000002265 prevention Effects 0.000 abstract 2
- 235000019441 ethanol Nutrition 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000010924 continuous production Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- -1 titanium carboxylate Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体基板用塗布組成物に関し、さらに詳し
くは太陽電池の反射防止膜、ならびにＰｎ接合形成用塗
布組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a coating composition for semiconductor substrates, and more particularly to an antireflection film for solar cells and a coating composition for forming a Pn junction.
従来例の構成とその問題点
従来、太陽電池が高価格となるのは、その製造工程数が
多く、まだ製造に際して熟練技術を要する点に一つの要
因があった。その中でも、Ｐｎ接合の形成及び表面反射
防止膜の形成技術は、素子特性を決定する重要な工程で
あり、主にＰｎ接合は熱処理を伴う気相拡散により、又
反射防止膜は真空蒸着法で形成されており、バッチ方式
により生産を行っておシ、連続化等、生産向上のだめの
ネックとなっていた。Conventional Structures and Their Problems Conventionally, one of the reasons why solar cells have been so expensive is that they require a large number of manufacturing steps and still require skilled technology to manufacture. Among these, the formation of Pn junctions and the formation of surface antireflection films are important processes that determine device characteristics. Pn junctions are mainly formed by vapor phase diffusion accompanied by heat treatment, and antireflection films are formed by vacuum evaporation. This has been a bottleneck in improving production, such as batch production and continuous production.
発明の目的
本発明は、上記従来の欠点を解消するものであり、Ｐｎ
接合の形成と、反射防止膜の形成とを同一工程で連続プ
ロセスにて同時に達成するよう、常圧にて作業を行なう
だめの塗布組成物を提供することを目的とするものであ
る。OBJECT OF THE INVENTION The present invention solves the above-mentioned conventional drawbacks, and
The object of the present invention is to provide a coating composition that can be operated at normal pressure so that the formation of a bond and the formation of an antireflection film can be simultaneously achieved in the same continuous process.
即ち、半導体基板に本発明による塗布組成物を塗布した
後、２ｏｏ℃以下の第１の熱処理で溶媒等を蒸発させ、
つづいて８ｏ○℃以上の第２の熱処理を施す事により、
Ｐｎ接合と、反射防止膜とを同時に形成するものである
。That is, after applying the coating composition according to the present invention to a semiconductor substrate, the solvent and the like are evaporated by a first heat treatment at 200° C. or less,
By subsequently performing a second heat treatment at 8o○℃ or higher,
A Pn junction and an antireflection film are formed at the same time.
発明の構成
上記目的を達成するため、本発明の塗布組成物分散させ
、かつ塗布組成物の安定性を得るためにＥ Ｄ Ｔ Ａ
等のジアミン類またはアセチルアセトン等のジケトン類
を加えて錯体化しており、さらにリン、硼素及びヒ素の
いずれかよりなるＰｎ接合形成用ドーパントを、たとえ
ばＢ （ＯＲ）３． Ｐ （ＯＲ）６等のエステルとし
て加えることにより、再現性のよいＰｎ接合が得られる
ように調合したことを特徴とする。この塗布組成物は室
温で安定なものであり、かつ、ドーパント及びチタンの
有機溶媒中での分散力を高めたことにより、均一で再現
性のよいＰｎ接合及び反射防止膜としての酸化チタン膜
（Ｔｉｅ、、）を同時に形成できる。Structure of the Invention In order to achieve the above objects, in order to disperse the coating composition of the present invention and to obtain stability of the coating composition, EDT A
For example, B (OR) 3. is complexed by adding diamines such as B (OR)3. It is characterized in that it is formulated so that a Pn junction with good reproducibility can be obtained by adding it as an ester such as P (OR)6. This coating composition is stable at room temperature, and by increasing the dispersion power of the dopant and titanium in an organic solvent, it can be used as a titanium oxide film ( Tie, , ) can be formed at the same time.
この本発明の塗布組成物は半導体基板にスピンナ又はデ
ィッピング法で塗布する。その後有機溶媒が蒸発する温
度にて、第１の熱処理を行なう。The coating composition of the present invention is applied to a semiconductor substrate using a spinner or dipping method. Thereafter, a first heat treatment is performed at a temperature at which the organic solvent evaporates.
この過程では、有機チタン化合物はジアミンまたはジケ
トンと錯体を形成しているため安定であり、このことが
塗布組成液の安定性、及び膜の再現性を良くしている。In this process, the organic titanium compound is stable because it forms a complex with the diamine or diketone, and this improves the stability of the coating composition and the reproducibility of the film.
一方、エステルの状態のドーパントは、一部分層して硼
酸、リン酸等に変化しはじめる。このことは次の第２の
熱処理で、塗布組成物中からドーパントが雰囲気中へ消
散する速度より、半導体基板に拡散する速度を大きくす
る。On the other hand, the dopant in the ester state partially forms a layer and begins to change into boric acid, phosphoric acid, etc. This causes the dopant in the coating composition to diffuse into the semiconductor substrate at a faster rate than it dissipates into the atmosphere during the subsequent second heat treatment.
この効果は、塗布組成物中のドーパント濃度が高いほど
大きく、太陽電池が表面不純物濃度を高めるほど開放電
圧が大きくなり、特性が向上することから非常に都合の
良いことである。次にひきつづいて、不活性ガス雰囲気
中で高温の第２の熱処理を施すことによりドーパントが
半導体基板中に拡散し、Ｐｎ接合を形成すると共に、反
射防止膜として酸化チタン膜を形成する。この第２の熱
処理では、有機チタン化合物は２００〜３００℃付近で
分解し、４００〜−５００ ’Ｃ付近からチタンの低級
酸化物が無定形のＴｉｅ遵となり、その後の加熱により
結晶化が進み、アナターゼ系のＴｉＯ２膜が生成する。This effect is very advantageous because the higher the dopant concentration in the coating composition is, the greater the effect is, and the higher the surface impurity concentration of the solar cell, the higher the open circuit voltage and the better the characteristics. Subsequently, a second heat treatment is performed at a high temperature in an inert gas atmosphere to diffuse the dopant into the semiconductor substrate, forming a Pn junction and forming a titanium oxide film as an antireflection film. In this second heat treatment, the organic titanium compound decomposes at around 200 to 300°C, and from around 400 to -500'C, the lower oxide of titanium becomes an amorphous TIE compound, which progresses to crystallization by subsequent heating. An anatase TiO2 film is produced.
つまり一般のＴｌＯ２の塗布組成物は、加水分解。In other words, general TlO2 coating compositions are hydrolyzed.
縮重合反応により、低温でチタン酸膜になる過程に較べ
て６０Ｑ℃以上の高温処理を必要とする代わりに、２０
ｏ℃以下の温度では非常に安定であり、経時変化が少な
いという特徴を有し、ピンホールがなく、均一な酸化チ
タン膜が再現性よく得られる。一方、エステル状態のド
ーパントは、エステルから、硼酸又はリン酸等に短時間
に変化しつつ酸化硼素又は五酸化リンの形まで変化し、
一種のドープ拡散によく似た形で不純物の半導体基板へ
の拡散が進行する。そのため従来の塗布拡散、つまり酸
化硼素をエチルセロソルブ等の有機溶媒に溶かした方法
及び一般に用いられている気相拡散に較べ、均一で再現
性がよく、かつダメージの少ない高濃度拡散層を得るこ
とができる。又チタンの太陽電池特性に対する影響は、
４００℃付近ですでにチタンは酸素と結合し、かつその
結合エネルギーが非常に太きいために、酸化チタンが還
元されて金属チタンとして半導体基板中に拡散すること
はなく、太陽電池特性に悪影響を与えることはない。つ
まり本発明の塗布組成物は、ｐｎ接合と、反射防止膜と
を同一処理で、しかも常圧処理により形成できることか
ら、連続プロセスが採用でき、又作業が簡便になり、熟
練技術を要しないことから著しく生産性を良くする効果
がある。Compared to the process of forming a titanate film at a low temperature due to a polycondensation reaction, instead of requiring a high temperature treatment of 60Q℃ or more,
It is very stable at temperatures below 0.degree. C. and has the characteristics of little change over time, and a uniform titanium oxide film without pinholes can be obtained with good reproducibility. On the other hand, an ester dopant changes from an ester to boric acid or phosphoric acid, etc. in a short period of time, and then to boron oxide or phosphorus pentoxide.
Diffusion of impurities into the semiconductor substrate progresses in a manner similar to a type of dope diffusion. Therefore, compared to conventional coating diffusion, that is, a method in which boron oxide is dissolved in an organic solvent such as ethyl cellosolve, and the commonly used gas phase diffusion, it is possible to obtain a highly concentrated diffusion layer that is uniform, has good reproducibility, and has less damage. I can do it. In addition, the influence of titanium on solar cell characteristics is as follows:
Titanium already bonds with oxygen at around 400°C, and the bonding energy is very large, so titanium oxide is not reduced and diffused into the semiconductor substrate as metallic titanium, which adversely affects solar cell characteristics. I won't give anything. In other words, since the coating composition of the present invention can form a pn junction and an antireflection film in the same process and by normal pressure treatment, a continuous process can be adopted, and the work is simple and does not require skilled techniques. This has the effect of significantly improving productivity.
実施例の説明
以下、本発明の一実施例について、図面に基づいて説明
する。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
有機溶媒としてエチルセロソルブ１００ＣＯに、カルボ
ン酸チタンにアセチルアセトンを加えて錯体化したも（
７）８．ＱＣＣ混合し、さらにＢ（ＯＣ２Ｈｓ）ｓの硼
酸トリアルキルを１０ｇ加えて十分に攪拌し塗布組成物
を準備した。これをスピンナ塗布装置により、第１図に
示すように比抵抗１．０Ω儒のＮ形シリコン半導体基板
１に塗布２する。そして次に１００℃にて２０分間大気
中にて第１の熱処理を行なう。この過程においては、有
機溶媒が蒸発すると共に硼酸トリアルキルの一部が硼酸
になる。A complex was obtained by adding acetylacetone to titanium carboxylate and ethyl cellosolve 100CO as an organic solvent (
7)8. After QCC mixing, 10 g of trialkyl borate of B(OC2Hs)s was added and sufficiently stirred to prepare a coating composition. This is coated 2 on an N-type silicon semiconductor substrate 1 having a specific resistance of 1.0 Ωf, as shown in FIG. 1, using a spinner coater. Then, a first heat treatment is performed at 100° C. for 20 minutes in the atmosphere. In this process, the organic solvent evaporates and a portion of the trialkyl borate becomes boric acid.
その後に、窒素雰囲気中にて９５０℃ヤ３０分第２の熱
処理を施し、第２図に示すように表面不純物濃度が１．
３ Ｘ １０”原−ｆ／Ｃ１ｄで、ｐｎ接合深さが約０
・５μｍの拡散層３を形成すると共に、アナターゼ系の
酸化チタン膜４も形成される。この時の酸化チタン膜４
の厚さは６２０人であシ、屈折率は２．１７である。そ
して第３図に示すように、裏面をエツチングし、電極６
を形成するとともにリード線６を半田等でつけ、キャノ
ンランプのソーラシュミレータで太陽電池の特性測定を
行なった。After that, a second heat treatment was performed at 950° C. for 30 minutes in a nitrogen atmosphere, and as shown in FIG. 2, the surface impurity concentration was reduced to 1.
3 x 10” raw f/C1d, pn junction depth is approximately 0
- While forming the 5 μm diffusion layer 3, an anatase-based titanium oxide film 4 is also formed. Titanium oxide film 4 at this time
Its thickness is 620 mm, and its refractive index is 2.17. Then, as shown in FIG. 3, the back surface is etched and the electrode 6 is etched.
A lead wire 6 was attached using solder or the like, and the characteristics of the solar cell were measured using a Cannon Lamp solar simulator.
これにより変換効率が１２・７条のものを得ることがで
きた。This made it possible to obtain a conversion efficiency of 12.7.
発明の詳細
な説明したように、本発明による塗布組成物を用いるこ
とにより、 ｐｎ接合と反射防止膜とを同一処理で、
かつ常圧下で同時に形成することが可能であシ、従来法
に較べて高度な熟練技術を必要とせずに簡便に形成する
ことができる。しかも連続化プロセスで製造でき、著し
く生産性を高めることができ、真空系でないだめに生産
設備も安価であり、償却コストも安い等、太陽電池の低
コスト化を図る上での産業的意義は非常に太きい。As described in detail, by using the coating composition according to the present invention, a pn junction and an antireflection coating can be formed in the same process.
Moreover, they can be formed simultaneously under normal pressure, and compared to conventional methods, they can be formed easily without requiring highly skilled techniques. In addition, it can be manufactured using a continuous process, which can significantly increase productivity, and the production equipment is inexpensive unless it is a vacuum system, and the depreciation cost is also low.This has industrial significance in terms of reducing the cost of solar cells. Very thick.
さらに、特性的に表面反射防止膜についても、真空系で
形成した酸化チタン膜の表面反射率と大差がなく、ｐｎ
接合形成においては気相拡散に較べて高濃度のドープ拡
散法のようにシリコンウェハ全面に、均一かつ再現性よ
＜ｐｎ接合を形成でき、高濃度拡散に伴うダメージによ
る飽和電流増大が軽減でき、高い開放電圧を得ることが
できる。Furthermore, the characteristics of the surface antireflection film are not much different from the surface reflectance of a titanium oxide film formed in a vacuum system, and the pn
In junction formation, compared to vapor phase diffusion, pn junctions can be formed uniformly and reproducibly over the entire surface of a silicon wafer using a high-concentration dope diffusion method, and the increase in saturation current due to damage caused by high-concentration diffusion can be reduced. A high open circuit voltage can be obtained.
第１図は本発明の実施例における塗布組成物を太陽電池
用シリコンウェハに塗布した図、第２図は同実施例にお
ける塗布組成物を塗布したシリコンウェハに第２の熱処
理を施した図、第３図は同太陽電池に電極形成とリード
線取付けを行った後の断面図である。
１・・・・・・シリコン半導体基板、２・・・・・・塗
布組成物、３・・・・・・拡散層、４・・・・・・酸化
チタン膜、６・・・・・・電極、６・・・・・・リード
線。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
第３図FIG. 1 is a diagram showing a silicon wafer for a solar cell coated with a coating composition according to an example of the present invention, and FIG. 2 is a diagram showing a second heat treatment applied to a silicon wafer coated with a coating composition according to the same example. FIG. 3 is a cross-sectional view of the same solar cell after electrode formation and lead wire attachment. DESCRIPTION OF SYMBOLS 1... Silicon semiconductor substrate, 2... Coating composition, 3... Diffusion layer, 4... Titanium oxide film, 6... Electrode, 6...Lead wire. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3
Claims (1)
体形成剤を混合するとともに、これとリン、硼素及びヒ
素のいずれかよりなるＰｎｎ接合形成用ドパパントをエ
ステルとして有機溶媒に溶解した半導体基板用塗布組成
物。A coating composition for a semiconductor substrate in which an organic titanium compound is mixed with a complex forming agent consisting of a diamine or a diketone, and a dopant for forming a Pnn junction consisting of one of phosphorus, boron and arsenic is dissolved in an organic solvent as an ester.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57206652A JPS5994883A (en) | 1982-11-24 | 1982-11-24 | Coating composition for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57206652A JPS5994883A (en) | 1982-11-24 | 1982-11-24 | Coating composition for semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5994883A true JPS5994883A (en) | 1984-05-31 |
Family
ID=16526890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57206652A Pending JPS5994883A (en) | 1982-11-24 | 1982-11-24 | Coating composition for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5994883A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5609694A (en) * | 1994-04-28 | 1997-03-11 | Sharp Kabushiki Kaisha | Solar cell and a method of manufacturing thereof |
-
1982
- 1982-11-24 JP JP57206652A patent/JPS5994883A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5609694A (en) * | 1994-04-28 | 1997-03-11 | Sharp Kabushiki Kaisha | Solar cell and a method of manufacturing thereof |
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