CN112701226B - Trans-three-dimensional perovskite solar cell based on photonic crystal heterojunction - Google Patents
Trans-three-dimensional perovskite solar cell based on photonic crystal heterojunction Download PDFInfo
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 90
- 230000031700 light absorption Effects 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 47
- TVUBDAUPRIFHFN-UHFFFAOYSA-N dioxosilane;oxygen(2-);titanium(4+) Chemical group [O-2].[O-2].[Ti+4].O=[Si]=O TVUBDAUPRIFHFN-UHFFFAOYSA-N 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 230000000903 blocking effect Effects 0.000 claims description 20
- 230000005525 hole transport Effects 0.000 claims description 20
- 150000001768 cations Chemical class 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 13
- 239000005751 Copper oxide Substances 0.000 claims description 13
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 13
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 13
- 229910000431 copper oxide Inorganic materials 0.000 claims description 13
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 13
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical group [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 12
- -1 halogen anion Chemical group 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N mono-methylamine Natural products NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 125000001153 fluoro group Chemical group F* 0.000 claims description 2
- 230000001795 light effect Effects 0.000 abstract description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 90
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 62
- 239000004408 titanium dioxide Substances 0.000 description 47
- 239000002243 precursor Substances 0.000 description 46
- 239000000377 silicon dioxide Substances 0.000 description 40
- 239000013078 crystal Substances 0.000 description 38
- 238000004528 spin coating Methods 0.000 description 33
- 238000000034 method Methods 0.000 description 32
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 28
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 25
- 239000004793 Polystyrene Substances 0.000 description 25
- 229920002223 polystyrene Polymers 0.000 description 25
- 235000012239 silicon dioxide Nutrition 0.000 description 22
- 230000008569 process Effects 0.000 description 20
- 238000002360 preparation method Methods 0.000 description 17
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 16
- 238000010276 construction Methods 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 239000000084 colloidal system Substances 0.000 description 12
- 239000008188 pellet Substances 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- 238000003756 stirring Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 150000001412 amines Chemical class 0.000 description 7
- 235000019441 ethanol Nutrition 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000010556 emulsion polymerization method Methods 0.000 description 6
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001291 vacuum drying Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000004005 microsphere Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229910001432 tin ion Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 239000012300 argon atmosphere Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- OHHBFEVZJLBKEH-UHFFFAOYSA-N ethylenediamine dihydrochloride Chemical compound Cl.Cl.NCCN OHHBFEVZJLBKEH-UHFFFAOYSA-N 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- SHWZFQPXYGHRKT-FDGPNNRMSA-N (z)-4-hydroxypent-3-en-2-one;nickel Chemical compound [Ni].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O SHWZFQPXYGHRKT-FDGPNNRMSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- ZBYYWKJVSFHYJL-UHFFFAOYSA-L cobalt(2+);diacetate;tetrahydrate Chemical compound O.O.O.O.[Co+2].CC([O-])=O.CC([O-])=O ZBYYWKJVSFHYJL-UHFFFAOYSA-L 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 1
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention relates to the technical field of solar cells and discloses a trans-type three-dimensional perovskite solar cell based on a photonic crystal heterojunction. Compared with the prior art, the trans-three-dimensional perovskite solar cell based on the photonic crystal heterojunction has the advantages of strong slow light effect, high capturing efficiency on incident light and high carrier transport efficiency.
Description
Description of the division
The invention discloses a trans three-dimensional perovskite solar cell based on photonic crystals and a preparation method thereof, which are divisional applications with the application date of 2018, 1 month and 31, the application number of 2018100956795.
Technical Field
The invention relates to the technical field of solar cells, in particular to a trans-type three-dimensional perovskite solar cell based on photonic crystal heterojunction.
Background
With the increasing increase of global energy crisis, solar energy has become a research hotspot in the field of renewable clean energy because of the advantages of abundant resources, wide distribution, environmental protection and the like. Perovskite Solar Cells (PSCs) have the characteristics of high photoelectric conversion efficiency, low cost, simple process and the like, and are widely focused as one of the most promising photovoltaic power generation technologies.
Generally, PSCs have three typical structures, namely, a formal mesoporous structure (conductive glass (FTO)/electron transport layer/mesoporous layer/perovskite light absorption layer/hole transport layer/metal electrode), a formal planar structure (FTO/electron transport layer/perovskite light absorption layer/hole transport layer/metal electrode), and a trans-planar structure (FTO/hole transport layer/perovskite light absorption layer/electron transport layer/metal electrode). Researchers have conducted a great deal of intensive research into the components of the device structure and their interfaces, for example: novel inorganic hole transport materials, perovskite light absorption layer materials, electron transport materials and metal electrode materials are developed, and the interface between the hole transport layer/light absorption layer and the electron transport layer/light absorption layer is optimized. In particular, the perovskite light absorption layer is used as the most critical component in the device structure, and the crystal structure, morphology and optical performance of the perovskite light absorption layer play a critical role in the device efficiency. In order to further improve the efficiency of the device, researchers explore the influence of the energy band gap of the perovskite light absorption layer and the interface matching property of the perovskite light absorption layer on the photoelectric performance of the device by adopting band gap engineering and interface engineering, and initially illustrate the inherent action mechanism of the perovskite light absorption layer. Particularly in trans PSCs, the adoption of band gap engineering is beneficial to obtaining a highly crystalline perovskite light absorbing layer; the battery device with more excellent photoelectric performance can be effectively optimized by adopting interface engineering. Therefore, the trans-planar structure is more beneficial to constructing PSCs with high device efficiency, small hysteresis effect and good stability. However, how to obtain inexpensive PSCs with excellent photoelectric properties remains an academic and industrial challenge.
Disclosure of Invention
The invention aims to: aiming at the problems in the prior art, the invention provides a trans-three-dimensional perovskite solar cell based on a photonic crystal heterojunction, which has the advantages of strong slow light effect, high capturing efficiency on incident light and high carrier transport efficiency.
The technical scheme is as follows: the invention provides a trans-three-dimensional perovskite solar cell based on a photonic crystal heterojunction, which is characterized by comprising a transparent conductive substrate, a hole transmission layer, a three-dimensional perovskite light absorption layer based on a silicon dioxide-titanium dioxide photonic crystal heterojunction, a hole blocking layer and a metal electrode, wherein the hole transmission layer, the three-dimensional perovskite light absorption layer, the hole blocking layer and the metal electrode are sequentially laminated on the transparent conductive substrate.
Further, the three-dimensional perovskite light absorption layer is a silicon dioxide-titanium dioxide photonic crystal heterojunction filled with a three-dimensional perovskite light absorption semiconductor material. The construction of the heterojunction is beneficial to improving the capturing efficiency of the perovskite light absorption layer on incident light, and the perovskite solar cell with high efficiency can be optimized by regulating and controlling the interface and the thickness of the perovskite light absorption layer; the three-dimensional perovskite light absorption layer based on the silicon dioxide-titanium dioxide photonic crystal heterojunction utilizes the photonic band gap and the slow light effect to improve the quantum efficiency of the device, and utilizes the three-dimensional ordered macroporous structure to improve the transmission efficiency of carriers, so that the photoelectric conversion efficiency of the device is improved.
Preferably, the three-dimensional perovskite light-absorbing semiconductor material is a material with ABX 3 A semiconductor material of crystalline structure, wherein a is a cation, B is a metal cation, and X is a halogen anion.
Preferably, the cation is any one or a combination of the following: methylamine cation (MA) + ，CH 3 NH 3 + ) Formamidine cation (FA) + ，CH(NH 2 ) 2 + ) Cesium ions (Cs) + ) The method comprises the steps of carrying out a first treatment on the surface of the The metal cations are any one or a combination of the following: pb 2+ 、Sn 2 + The method comprises the steps of carrying out a first treatment on the surface of the The halogen anions are any one or a combination of the following: i - 、Br - 、Cl - 。
Preferably, the hole transport layer is nickel oxide, copper oxide or cobalt oxide.
Preferably, the hole blocking layer is 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline (BCP).
Preferably, the metal electrode is a silver electrode or a gold electrode.
Preferably, the transparent conductive substrate is fluorine doped tin oxide conductive glass (FTO).
The invention also provides a preparation method of the trans-three-dimensional perovskite solar cell based on the photonic crystal heterojunction, which comprises the following steps: s1: preparing a hole transport layer on a transparent conductive substrate; s2: preparing a silicon dioxide precursor solution and a titanium dioxide precursor solution; s3: using polystyrene balls as construction elements, preparing the polystyrene balls and the silicon dioxide precursor solution into a group solution A, using the transparent conductive substrate as a substrate, and adopting a constant-temperature vertical deposition method to deposit polystyrene-silicon dioxide colloid crystals on the hole transport layer; s4: using polystyrene spheres as construction elements, preparing a composition solution B with the titanium dioxide precursor solution, using the transparent conductive substrate to introduce titanium dioxide on the polystyrene-silicon dioxide colloidal crystal by adopting a constant temperature vertical deposition method, and obtaining a polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction; s5: removing polystyrene spheres in the polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction to obtain a three-dimensional ordered macroporous silicon dioxide-titanium dioxide photonic crystal heterojunction; s6: filling perovskite light-absorbing semiconductor materials in the three-dimensional ordered macroporous silicon dioxide-titanium dioxide photonic crystal heterojunction by using the transparent conductive substrate as a substrate by adopting a two-step method to obtain a three-dimensional perovskite light-absorbing layer based on the silicon dioxide-titanium dioxide photonic crystal heterojunction; s7: and sequentially carrying out vacuum evaporation on the hole blocking layer and the metal electrode on the three-dimensional perovskite light absorption layer.
Further, in the step S6, the two-step method specifically includes the steps of: first, ABX is prepared 3 Cation (a) solution, metal cation (B) solution in semiconductor material of crystal structure: preparing a cation (A) solution with the concentration of 30-40 mg/mL by taking isopropyl alcohol (IPA) as a solvent, and preparing a metal cation (B) solution with the concentration of 0.6-1.2 mol/L by taking N, N-Dimethylformamide (DMF) as a solvent; secondly, spin-coating the metal cation (B) solution and the cation (a) solution on the silica-titania photonic crystal heterojunction in sequence in an air environment: under the air environment, placing the silicon dioxide-titanium dioxide photonic crystal heterojunction substrate into a spin coater to carry out heat treatment at 75-95 ℃, and then spin-coating the surface of the silicon dioxide-titanium dioxide photonic crystal heterojunction substrate at 70-80 DEG CA metal cation (B) solution, covering a crystallization dish attached with dimethyl sulfoxide (DMSO) on a substrate, lasting for 8-12 minutes at 70-80 ℃, and spin-coating the cation (A) solution on the substrate; finally, the three-dimensional perovskite light absorption layer is obtained through heat treatment: and covering the substrate with the crystal dish attached with DMF (dimethyl formamide), and continuously maintaining the temperature of 80-110 ℃ for 0.9-1.2 hours to obtain the three-dimensional perovskite light absorption layer based on the silicon dioxide-titanium dioxide photonic crystal heterojunction.
The beneficial effects are that: the structure of the trans-three-dimensional perovskite solar cell based on the photonic crystal heterojunction is conductive glass/a hole transmission layer/a three-dimensional perovskite light absorption layer/a hole blocking layer/a metal electrode based on the silicon dioxide-titanium dioxide photonic crystal heterojunction, and the trans-three-dimensional perovskite solar cell based on the photonic crystal heterojunction is characterized in that:
1) The photonic band gap of the three-dimensional perovskite light absorption layer based on the titanium dioxide photonic crystal is utilized to improve the quantum efficiency of the device in the long wavelength 600-800nm range;
2) By utilizing the matching property of the photonic band gap of the three-dimensional perovskite light absorption layer based on the silicon dioxide photonic crystal and the energy band gap of the perovskite material, the slow light effect is enhanced, and the capturing efficiency of the device on incident light is improved;
3) The three-dimensional perovskite light absorption layer based on the silicon dioxide-titanium dioxide photonic crystal heterojunction has unique electrical properties: on the one hand, the three-dimensional perovskite light absorbing layer based on the silicon dioxide photonic crystal can separate the hole transmission layer from the three-dimensional perovskite light absorbing layer based on the titanium dioxide photonic crystal, so that electrons in the titanium dioxide and holes in the hole transmission layer are prevented from being compounded; on the other hand, electrons can be transmitted to the hole blocking layer through titanium dioxide and then enter the metal electrode through the hole blocking layer, and meanwhile, the hole blocking layer can block holes from entering the metal electrode, so that the electrons and the holes are prevented from being compounded at the metal electrode; it can be seen that the unique electrical properties of the three-dimensional perovskite light absorbing layer based on the silica-titania photonic crystal heterojunction help to improve the transport efficiency of carriers;
4) The ordered macroporous structure of the three-dimensional perovskite light absorption layer based on the silicon dioxide-titanium dioxide photonic crystal heterojunction can be utilized to effectively improve the transport efficiency of carriers;
5) The trans-three-dimensional perovskite solar cell device based on the photonic crystal heterojunction shows a certain color, and the beauty is enhanced.
6) The trans-three-dimensional perovskite solar cell based on the photonic crystal heterojunction can be used for effectively preparing a large-area cell device, and has the advantages of high photoelectric conversion efficiency, small hysteresis effect, good stability and the like compared with a formal three-dimensional perovskite solar cell.
Drawings
FIG. 1 is a schematic structural diagram of a photonic crystal heterojunction-based trans three-dimensional perovskite solar cell;
FIG. 2 is a flow chart of the preparation of a photonic crystal heterojunction-based trans three-dimensional perovskite solar cell;
FIG. 3 is a flow chart of the preparation of polystyrene-silica colloidal crystals;
FIG. 4 is a flow chart of the preparation of a three-dimensional ordered macroporous silica-titania photonic crystal heterojunction;
FIG. 5 is a three-dimensional perovskite MAPbI based on silica-titania photonic crystal heterojunction 3 A flow chart for preparing the light absorption layer.
FIG. 6 is a three-dimensional perovskite FASnI based on silica-titania photonic crystal heterojunction 3 A flow chart for preparing the light absorption layer.
Fig. 7 is a three-dimensional perovskite CsPbBr based on silica-titania photonic crystal heterojunction 3 A flow chart for preparing the light absorption layer.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
Embodiment 1:
the structure of the trans-type three-dimensional perovskite solar cell based on the photonic crystal heterojunction is shown in fig. 1, and the trans-type three-dimensional perovskite solar cell is composed of an FTO, a nickel oxide hole transport layer, a three-dimensional perovskite light absorption layer based on the silicon dioxide-titanium dioxide photonic crystal heterojunction, a BCP hole blocking layer and a silver electrode, wherein the nickel oxide hole transport layer, the three-dimensional perovskite light absorption layer, the BCP hole blocking layer and the silver electrode are sequentially stacked on the FTO. Wherein three-dimensional perovskite is absorbedThe optical layer is filled with MAPbI 3 A three-dimensional ordered macroporous silica-titania photonic crystal heterojunction.
The preparation method of the trans-three-dimensional perovskite solar cell based on the photonic crystal heterojunction comprises the following steps of:
s1: preparing a nickel oxide hole transport layer on the FTO by a spin coating method;
the specific process is as follows: preparing a nickel acetylacetonate solution with the concentration of 0.5 mol/L by taking absolute ethyl alcohol as a solvent, adding diethanolamine with the same mole number as nickel ions, and stirring for 12 hours at 70 ℃; after the reaction is finished, the solution is placed at 150 ℃ and evaporated for 30 minutes to form a nickel oxide precursor; placing the cleaned FTO conductive glass on a spin coater, dripping a nickel oxide precursor, and spin-coating for 30 seconds under the condition of 3000 r/s; and (3) placing the FTO in a drying oven, and drying at 60 ℃ for 1 hour to obtain the nickel oxide hole transport layer.
S2: preparing a silicon dioxide precursor solution and a titanium dioxide precursor solution;
the specific process for preparing the silicon dioxide precursor solution is as follows: firstly, 1mL of tetraethyl orthosilicate and 1mL of absolute ethyl alcohol are mixed and stirred uniformly at room temperature; secondly, under the condition of stirring, slowly and sequentially dropwise adding 0.25mL of hydrochloric acid and 0.2mL of deionized water to obtain a silicon dioxide precursor solution; finally, the prepared silicon dioxide precursor solution is preserved at the temperature of 4 ℃ for standby.
The specific process for preparing the titanium dioxide precursor solution comprises the following steps: firstly, at room temperature, 1mL of tetrabutyl titanate and 1mL of absolute ethyl alcohol are mixed and stirred uniformly; secondly, under the condition of stirring, slowly and sequentially dropwise adding 0.2mL of hydrochloric acid and 0.4mL of deionized water to obtain a titanium dioxide precursor solution; finally, the prepared titanium dioxide precursor solution is preserved at the temperature of 4 ℃ for standby.
S3: preparing an assembly solution A by taking polystyrene pellets as construction elements and a silicon dioxide precursor solution prepared in S2, taking FTO (fluorine-doped tin oxide) prepared in S1 and spin-coated with a nickel oxide hole transport layer as a substrate, and depositing polystyrene-silicon dioxide colloid crystals on nickel oxide by adopting a constant-temperature vertical deposition method;
the specific process is as follows: dispersing 0.1mL of a silicon dioxide precursor solution into 50mL of a polystyrene pellet ethanol solution with the mass fraction of 0.05% by taking monodisperse polystyrene pellets prepared by a soap-free emulsion polymerization method as a construction element to prepare a component solution A, and placing the component solution A in a vacuum drying oven with the temperature of 25 ℃; inserting the spin-coated nickel oxide FTO substrate into the assembly solution A, and after the solvent is volatilized, preparing the polystyrene-silicon dioxide colloidal crystal; the preparation flow chart is shown in figure 3.
S4: preparing an assembly solution B by taking polystyrene pellets as construction elements and a titanium dioxide precursor solution prepared in the step S2, taking FTO (fluorine-doped tin oxide) with polystyrene-silicon dioxide colloidal crystals deposited on nickel oxide as a substrate, and introducing titanium dioxide on the polystyrene-silicon dioxide colloidal crystals by adopting a constant-temperature vertical deposition method to obtain a polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction;
the specific process is as follows: dispersing 0.1mL of titanium dioxide precursor solution into 50mL of polystyrene microsphere ethanol solution with mass fraction of 0.05% by taking monodisperse polystyrene spheres prepared by a soap-free emulsion polymerization method as a construction element to prepare a component solution B, and placing the component solution B in a vacuum drying oven with temperature of 25 ℃; and inserting the FTO substrate deposited with the polystyrene-silicon dioxide colloidal crystal on the nickel oxide into the assembly solution B, and obtaining the polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction after the solvent is volatilized.
S5: removing polystyrene spheres in the polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction in the S4 to obtain a three-dimensional ordered macroporous silicon dioxide-titanium dioxide photonic crystal heterojunction;
the specific process is as follows: placing the polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction into a sintering furnace for heat treatment, wherein the heating rate is 2 ℃ per minute, and the temperature is kept at 500 ℃ for 1 hour, so that the three-dimensional ordered macroporous silicon dioxide-titanium dioxide photonic crystal heterojunction can be obtained; the preparation flow chart of the two steps S4 and S5 is shown in FIG. 4.
S6: FTO with three-dimensional ordered macroporous silica-titanium dioxide photonic crystal heterojunction is taken as a substrate, and two are adoptedFilling MAPbI in three-dimensional ordered macroporous silicon dioxide-titanium dioxide photonic crystal heterojunction by using a method 3 Obtaining a three-dimensional perovskite light absorption layer based on a silicon dioxide-titanium dioxide photonic crystal heterojunction;
the specific process is as follows: first, a spin coating solution is prepared: weighing lead iodide, adding the lead iodide into N, N-dimethylformamide solution, and stirring for 3 hours at 70 ℃ to prepare a lead iodide solution with the concentration of 0.6 mol/L; adding methyl iodized amine into isopropanol solution, and stirring for 3 hours at 20 ℃ to prepare methyl iodized amine solution with the concentration of 30 mg/mL;
and secondly, spin-coating a lead iodide solution and a methyl amine iodide solution on the silicon dioxide-titanium dioxide photonic crystal heterojunction in sequence in an air environment. The specific process is as follows: placing an FTO substrate with a three-dimensional ordered macroporous silica-titania photonic crystal heterojunction in a spin coater under an air environment, performing heat treatment at 75 ℃ for 15 minutes, then spin-coating a lead iodide solution with the temperature of 70 ℃ on the surface of the three-dimensional ordered macroporous silica-titania photonic crystal heterojunction, wherein the spin-coating condition is spin-coating for 30 seconds at 3000 rpm, then covering a crystal dish attached with dimethyl sulfoxide (DMSO) on the substrate, and continuing for 8 minutes at 70 ℃, then spin-coating a methyl iodinated amine solution, and the spin-coating condition is spin-coating for 40 seconds at 4000 rpm;
finally, the substrate is covered by a crystallization dish attached with DMF, and the substrate is continuously treated for 1.2 hours at the temperature of 80 ℃ to obtain the three-dimensional perovskite light absorption layer based on the silicon dioxide-titanium dioxide photonic crystal heterojunction. The preparation flow is shown in figure 5.
S7: and sequentially carrying out vacuum evaporation on the hole blocking layer and the metal electrode on the three-dimensional perovskite light absorption layer to obtain the trans-three-dimensional perovskite solar cell based on the photonic crystal heterojunction.
The specific process is as follows: placing the FTO substrate with the three-dimensional perovskite light absorption layer in a high vacuum coating instrument, sequentially evaporating BCP and silver electrodes, thereby constructing a trans-three-dimensional perovskite solar cell based on photonic crystal heterojunction, and controlling the area of a device to be 0.1cm through a mask plate 2 。
Embodiment 2:
the structure of the trans-type three-dimensional perovskite solar cell based on the photonic crystal heterojunction is shown in fig. 1, and the trans-type three-dimensional perovskite solar cell is composed of an FTO, a copper oxide hole transmission layer, a three-dimensional perovskite light absorption layer based on the silicon dioxide-titanium dioxide photonic crystal heterojunction, a BCP hole blocking layer and a gold electrode, wherein the copper oxide hole transmission layer, the three-dimensional perovskite light absorption layer, the BCP hole blocking layer and the gold electrode are sequentially stacked on the FTO. Wherein the three-dimensional perovskite light absorption layer is filled with FASnI 3 A three-dimensional ordered macroporous silica-titania photonic crystal heterojunction,
the preparation method of the trans-three-dimensional perovskite solar cell based on the photonic crystal heterojunction comprises the following steps of:
s1: preparing a copper oxide hole transport layer on the FTO by a spin coating method;
the specific process is as follows: preparing a copper sulfate pentahydrate solution with the concentration of 0.5 mol/L by taking ethylene glycol as a solvent, and adding a certain amount of 1, 2-ethylenediamine dihydrochloride (with the concentration of 1.0 mol/L); forming a copper oxide precursor after the reaction is finished; placing the cleaned FTO conductive glass on a spin coater, dripping copper oxide precursor, and spin-coating for 50 seconds under 6000 rpm; and (3) placing the FTO in a tubular furnace, and performing heat treatment at 300 ℃ for 2 hours in an argon atmosphere to obtain the copper oxide hole transport layer.
S2: preparing a silicon dioxide precursor solution and a titanium dioxide precursor solution;
the specific process for preparing the silicon dioxide precursor solution is as follows: firstly, 1mL of tetraethyl orthosilicate and 1mL of absolute ethyl alcohol are mixed and stirred uniformly at room temperature; secondly, under the condition of stirring, slowly and sequentially dropwise adding 0.25mL of hydrochloric acid and 0.2mL of deionized water to obtain a silicon dioxide precursor solution; finally, the prepared silicon dioxide precursor solution is preserved at the temperature of 4 ℃ for standby.
The specific process for preparing the titanium dioxide precursor solution comprises the following steps: firstly, at room temperature, 1mL of tetrabutyl titanate and 1mL of absolute ethyl alcohol are mixed and stirred uniformly; secondly, under the condition of stirring, slowly and sequentially dropwise adding 0.2mL of hydrochloric acid and 0.4mL of deionized water to obtain a titanium dioxide precursor solution; finally, the prepared titanium dioxide precursor solution is preserved at the temperature of 4 ℃ for standby.
S3: preparing an assembly solution A by taking polystyrene pellets as construction elements and a silicon dioxide precursor solution prepared in S2, taking FTO (fluorine-doped tin oxide) prepared in S1 and spin-coated with a copper oxide hole transport layer as a substrate, and depositing polystyrene-silicon dioxide colloid crystals on copper oxide by adopting a constant-temperature vertical deposition method;
the specific process is as follows: dispersing 0.1mL of a silicon dioxide precursor solution into 50mL of a polystyrene pellet ethanol solution with the mass fraction of 0.05% by taking monodisperse polystyrene pellets prepared by a soap-free emulsion polymerization method as a construction element to prepare a component solution A, and placing the component solution A in a vacuum drying oven with the temperature of 25 ℃; inserting the FTO substrate spin-coated with copper oxide into the assembly solution A, and obtaining polystyrene-silicon dioxide colloid crystal after the solvent is volatilized; the preparation flow chart is shown in figure 3.
S4: preparing an assembly solution B by taking polystyrene pellets as construction elements and the titanium dioxide precursor solution prepared in the step S2, taking FTO with polystyrene-silicon dioxide colloid crystals deposited on copper oxide as a substrate, and introducing titanium dioxide on the polystyrene-silicon dioxide colloid crystals by adopting a constant temperature vertical deposition method to obtain a polystyrene-silicon dioxide-titanium dioxide colloid crystal heterojunction;
the specific process is as follows: dispersing 0.1mL of titanium dioxide precursor solution into 50mL of polystyrene microsphere ethanol solution with mass fraction of 0.05% by taking monodisperse polystyrene spheres prepared by a soap-free emulsion polymerization method as a construction element to prepare a component solution B, and placing the component solution B in a vacuum drying oven with temperature of 25 ℃; and inserting the FTO substrate deposited with the polystyrene-silicon dioxide colloidal crystal on the copper oxide into the assembly solution B, and obtaining the polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction after the solvent is volatilized.
S5: removing polystyrene spheres in the polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction in the S4 to obtain a three-dimensional ordered macroporous silicon dioxide-titanium dioxide photonic crystal heterojunction;
the specific process is as follows: placing the polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction into a sintering furnace for heat treatment, wherein the heating rate is 2 ℃ per minute, and the temperature is kept at 450 ℃ for 1 hour, so that the three-dimensional ordered macroporous silicon dioxide-titanium dioxide photonic crystal heterojunction can be obtained; the preparation flow chart of the two steps S4 and S5 is shown in FIG. 4.
S6: taking FTO with three-dimensional ordered macroporous silica-titanium dioxide photonic crystal heterojunction as a substrate, and filling FASnI in the three-dimensional ordered macroporous silica-titanium dioxide photonic crystal heterojunction by adopting a two-step method 3 Obtaining a three-dimensional perovskite light absorption layer based on a silicon dioxide-titanium dioxide photonic crystal heterojunction;
the specific process is as follows: first, a spin coating solution is prepared: sequentially adding 30 microliters of trimethylamine (33% ethanol solution), tin iodide (with the concentration of 1.0 mol/L) and tin fluoride (with the concentration of 0.1 mol/L) into N, N-dimethylformamide solution serving as a solvent, and stirring for 3 hours at the temperature of 75 ℃ to prepare a tin ion solution; adding formamidine iodized amine into isopropanol solution, and stirring for 3 hours at 25 ℃ to prepare formamidine iodized amine solution with the concentration of 35 mg/mL;
and secondly, spin-coating a tin ion solution and a formamidine iodized amine solution on the silicon dioxide-titanium dioxide photonic crystal heterojunction in sequence in an air environment. Specifically, the method is as follows: placing an FTO substrate with a three-dimensional ordered macroporous silica-titania photonic crystal heterojunction in a spin coater in an air environment, performing heat treatment at 85 ℃ for 15 minutes, then spin-coating tin ion solution with the temperature of 75 ℃ on the surface of the three-dimensional ordered macroporous silica-titania photonic crystal heterojunction, wherein the spin-coating condition is spin-coating for 50 seconds under the 6000 rpm condition, then covering a crystal dish attached with dimethyl sulfoxide (DMSO) on the substrate, and keeping the temperature of 75 ℃ for 10 minutes, and then spin-coating formamidine-iodized amine solution, wherein the spin-coating condition is spin-coating for 20 seconds under the 5000 rpm condition;
finally, the substrate is covered by a crystallization dish attached with DMF, and the substrate is continuously treated for 1.0 hour at the temperature of 95 ℃ to obtain the three-dimensional perovskite light absorption layer based on the silicon dioxide-titanium dioxide photonic crystal heterojunction. The preparation flow is shown in figure 6.
S7: and sequentially carrying out vacuum evaporation on the hole blocking layer and the metal electrode on the three-dimensional perovskite light absorption layer to obtain the trans-three-dimensional perovskite solar cell based on the photonic crystal heterojunction.
The specific process is as follows: placing the FTO substrate with the three-dimensional perovskite light absorption layer in a high vacuum coating instrument, sequentially evaporating BCP and a gold electrode, thereby constructing a trans-three-dimensional perovskite solar cell based on photonic crystal heterojunction, and controlling the area of a device to be 0.1cm through a mask plate 2 。
Embodiment 3:
the structure of the trans-type three-dimensional perovskite solar cell based on the photonic crystal heterojunction is shown in fig. 1, and the trans-type three-dimensional perovskite solar cell is composed of an FTO, a cobalt oxide hole transmission layer, a three-dimensional perovskite light absorption layer based on the silicon dioxide-titanium dioxide photonic crystal heterojunction, a BCP hole blocking layer and a gold electrode, wherein the cobalt oxide hole transmission layer, the three-dimensional perovskite light absorption layer, the BCP hole blocking layer and the gold electrode are sequentially stacked on the FTO. Wherein the three-dimensional perovskite light absorption layer is filled with CsPbBr 3 A three-dimensional ordered macroporous silica-titania photonic crystal heterojunction,
the preparation method of the trans-three-dimensional perovskite solar cell based on the photonic crystal heterojunction comprises the following steps of:
s1: preparing a cobalt oxide hole transport layer on the FTO by a spin coating method;
the specific process is as follows: preparing a cobalt acetate tetrahydrate solution with the concentration of 0.5 mol/L by taking ethylene glycol as a solvent, and adding a certain amount of 1, 2-ethylenediamine dihydrochloride (with the concentration of 1.0 mol/L); forming a cobalt oxide precursor after the reaction is finished; placing the cleaned FTO conductive glass on a spin coater, dripping a cobalt oxide precursor, and spin-coating for 50 seconds under 6000 rpm; and (3) placing the FTO in a tubular furnace, and performing heat treatment at 300 ℃ for 2 hours under an argon atmosphere to obtain the cobalt oxide hole transport layer.
S2: preparing a silicon dioxide precursor solution and a titanium dioxide precursor solution;
the specific process for preparing the silicon dioxide precursor solution is as follows: firstly, 1mL of tetraethyl orthosilicate and 1mL of absolute ethyl alcohol are mixed and stirred uniformly at room temperature; secondly, under the condition of stirring, slowly and sequentially dropwise adding 0.25mL of hydrochloric acid and 0.2mL of deionized water to obtain a silicon dioxide precursor solution; finally, the prepared silicon dioxide precursor solution is preserved at the temperature of 4 ℃ for standby.
The specific process for preparing the titanium dioxide precursor solution comprises the following steps: firstly, at room temperature, 1mL of tetrabutyl titanate and 1mL of absolute ethyl alcohol are mixed and stirred uniformly; secondly, under the condition of stirring, slowly and sequentially dropwise adding 0.2mL of hydrochloric acid and 0.4mL of deionized water to obtain a titanium dioxide precursor solution; finally, the prepared titanium dioxide precursor solution is preserved at the temperature of 4 ℃ for standby.
S3: preparing an assembly solution A by taking polystyrene pellets as construction elements and a silicon dioxide precursor solution prepared in S2, taking FTO (fluorine-doped tin oxide) prepared in S1 and spin-coated with a cobalt oxide hole transport layer as a substrate, and depositing polystyrene-silicon dioxide colloid crystals on the cobalt oxide by adopting a constant-temperature vertical deposition method;
the specific process is as follows: dispersing 0.1mL of a silicon dioxide precursor solution into 50mL of a polystyrene pellet ethanol solution with the mass fraction of 0.05% by taking monodisperse polystyrene pellets prepared by a soap-free emulsion polymerization method as a construction element to prepare a component solution A, and placing the component solution A in a vacuum drying oven with the temperature of 25 ℃; inserting the FTO substrate spin-coated with the cobalt oxide into the assembly solution A, and obtaining polystyrene-silicon dioxide colloid crystals after the solvent is volatilized; the preparation flow chart is shown in figure 3.
S4: preparing an assembly solution B by taking polystyrene pellets as construction elements and a titanium dioxide precursor solution prepared in the step S2, taking FTO (fluorine-doped tin oxide) with polystyrene-silicon dioxide colloid crystals deposited on cobalt oxide as a substrate, and introducing titanium dioxide on the polystyrene-silicon dioxide colloid crystals by adopting a constant-temperature vertical deposition method to obtain a polystyrene-silicon dioxide-titanium dioxide colloid crystal heterojunction;
the specific process is as follows: dispersing 0.1mL of titanium dioxide precursor solution into 50mL of polystyrene microsphere ethanol solution with mass fraction of 0.05% by taking monodisperse polystyrene spheres prepared by a soap-free emulsion polymerization method as a construction element to prepare a component solution B, and placing the component solution B in a vacuum drying oven with temperature of 25 ℃; and inserting the FTO substrate deposited with the polystyrene-silicon dioxide colloidal crystal on the cobalt oxide into the assembly solution B, and obtaining the polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction after the solvent is volatilized.
S5: removing polystyrene spheres in the polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction in the S4 to obtain a three-dimensional ordered macroporous silicon dioxide-titanium dioxide photonic crystal heterojunction;
the specific process is as follows: placing the polystyrene-silicon dioxide-titanium dioxide colloidal crystal heterojunction into a sintering furnace for heat treatment, wherein the heating rate is 2 ℃ per minute, and the temperature is kept at 450 ℃ for 1 hour, so that the three-dimensional ordered macroporous silicon dioxide-titanium dioxide photonic crystal heterojunction can be obtained; the preparation flow chart of the two steps S4 and S5 is shown in FIG. 4.
S6: taking FTO with three-dimensional ordered macroporous silica-titanium dioxide photonic crystal heterojunction as a substrate, and filling CsPbBr in the three-dimensional ordered macroporous silica-titanium dioxide photonic crystal heterojunction by adopting a two-step method 3 Obtaining a three-dimensional perovskite light absorption layer based on a silicon dioxide-titanium dioxide photonic crystal heterojunction;
the specific process is as follows: first, a spin coating solution is prepared: weighing lead bromide, adding the lead bromide into N, N-dimethylformamide solution, and stirring for 3 hours at 80 ℃ to prepare lead bromide solution with the concentration of 1.2 mol/L; cesium bromide is weighed and added into isopropanol solution, and stirred for 3 hours at 30 ℃ to prepare cesium bromide solution with the concentration of 40 mg/mL;
and secondly, spin-coating a lead bromide solution and a cesium bromide solution on the silicon dioxide-titanium dioxide photonic crystal heterojunction in sequence in an air environment. Specifically, the method is as follows: placing an FTO substrate with a three-dimensional ordered macroporous silica-titania photonic crystal heterojunction in a spin coater in an air environment, performing heat treatment at 95 ℃ for 15 minutes, then spin-coating a lead bromide solution with the temperature of 80 ℃ on the surface of the three-dimensional ordered macroporous silica-titania photonic crystal heterojunction, wherein the spin-coating condition is spin-coating for 30 seconds under 2000 revolutions per second, then covering a crystal dish attached with dimethyl sulfoxide (DMSO) on the substrate, lasting for 12 minutes at the temperature of 80 ℃, then spin-coating with a cesium bromide solution, and the spin-coating condition is spin-coating for 40 seconds under 3000 revolutions per second;
finally, the substrate is covered by a crystallization dish attached with DMF, and the substrate is continuously treated for 0.9 hour at the temperature of 110 ℃ to obtain the three-dimensional perovskite light absorption layer based on the silicon dioxide-titanium dioxide photonic crystal heterojunction. The preparation flow is shown in figure 7.
S7: and sequentially carrying out vacuum evaporation on the hole blocking layer and the metal electrode on the three-dimensional perovskite light absorption layer to obtain the trans-three-dimensional perovskite solar cell based on the photonic crystal heterojunction.
The specific process is as follows: placing the FTO substrate with the three-dimensional perovskite light absorption layer in a high vacuum coating instrument, sequentially evaporating BCP and a gold electrode, thereby constructing a trans-three-dimensional perovskite solar cell based on photonic crystal heterojunction, and controlling the area of a device to be 0.1cm through a mask plate 2 。
The foregoing embodiments are merely illustrative of the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the present invention and to implement the same, not to limit the scope of the present invention. All equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of the present invention.
Claims (7)
1. The trans-type three-dimensional perovskite solar cell based on the photonic crystal heterojunction is characterized by comprising a transparent conductive substrate, a hole transmission layer, a three-dimensional perovskite light absorption layer, a hole blocking layer and a metal electrode, wherein the hole transmission layer, the three-dimensional perovskite light absorption layer, the hole blocking layer and the metal electrode are sequentially laminated on the transparent conductive substrate;
the three-dimensional perovskite light absorption layer is a silicon dioxide-titanium dioxide photonic crystal heterojunction filled with a three-dimensional perovskite light absorption semiconductor material.
2. The photonic crystal heterojunction-based trans three-dimensional perovskite solar cell according to claim 1, characterized in that the three-dimensional perovskite light absorbing semiconductor material is a semiconductor material with ABX 3 A semiconductor material of crystalline structure, wherein a is a cation, B is a metal cation, and X is a halogen anion.
3. The photonic crystal heterojunction based trans-three-dimensional perovskite solar cell according to claim 2, wherein,
the cation is any one or a combination of the following: methylamine cations, formamidine cations, cesium ions;
the metal cations are any one or a combination of the following: pb 2+ 、Sn 2+ ；
The halogen anions are any one or a combination of the following: i - 、Br - 、Cl - 。
4. A trans three-dimensional perovskite solar cell based on photonic crystal heterojunction as claimed in any one of claims 1 to 3 wherein the hole transport layer is nickel oxide, copper oxide or cobalt oxide.
5. A trans three-dimensional perovskite solar cell based on photonic crystal heterojunction according to any one of claims 1 to 3, characterized in that the hole blocking layer is 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline.
6. A trans three-dimensional perovskite solar cell based on photonic crystal heterojunction as claimed in any one of claims 1 to 3 wherein the metal electrode is a silver electrode or a gold electrode.
7. A trans three-dimensional perovskite solar cell based on photonic crystal heterojunction as claimed in any one of claims 1 to 3 wherein said transparent conductive substrate is fluorine doped tin oxide conductive glass.
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