JPS5993366A - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPS5993366A JPS5993366A JP57201924A JP20192482A JPS5993366A JP S5993366 A JPS5993366 A JP S5993366A JP 57201924 A JP57201924 A JP 57201924A JP 20192482 A JP20192482 A JP 20192482A JP S5993366 A JPS5993366 A JP S5993366A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- thermal head
- film
- heating resistor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、感熱記録紙に摺動するに良好なサーマルヘッ
ドに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a thermal head that is suitable for sliding on thermal recording paper.
従来、たとえば、ファクシミリなどに用いられるヘッド
として、薄膜型のサーマルヘッドが知られている。かか
るサーマルヘッドは、基板上に発熱抵抗体と電極層が形
成され、それらの上に保匹膜が設けられた構成をなして
いる。そして、かかるサーマルヘッドは、走行する感熱
記録紙に当接し、これに摺動するものであるから、耐摩
耗性、化学的安定性などの諸特性に優れてＡる必要があ
るが、これら諸特性は、主としてサーマルヘッドの保護
膜により左右される。2. Description of the Related Art Thin-film thermal heads are conventionally known as heads used in facsimiles and the like. Such a thermal head has a structure in which a heating resistor and an electrode layer are formed on a substrate, and a balance-keeping film is provided on them. Since such a thermal head contacts and slides on a running thermal recording paper, it is necessary to have excellent properties such as abrasion resistance and chemical stability. The characteristics are mainly influenced by the protective film of the thermal head.
従来、サーマルヘッドの保霞膜としては、ＳｉＯ，／ｆ
偽Ｏ３の積層膜、 ＳｉＣ，Ｓｉ、八などの単層が一般
に使用されている。稼動時、感熱記録紙上を摺動する保
護膜の摩耗性についてみると、 ＴａＡによる保護膜は
、硬度が小さくて耐摩耗性に劣υ、ＳｉＣによる保護膜
は、化学的に不安定で感熱記録紙の感熱剤と反応し、耐
摩耗性が著しく低下する。また、５ｉｓＮ、による保護
膜は、硬度が犬きく、化学的に安定で耐摩耗性に優れた
特性を有しているが、保護膜内に生ずる内部応力・が大
きく、稼動時に保護膜上を加圧摺動する感熱記録紙によ
って経時的に亀裂、膜剥れが発生Ｕ、発熱抵抗体を破損
させると込う欠点を有していた。Conventionally, SiO,/f has been used as a haze film for thermal heads.
Laminated films of pseudo O3, single layers of SiC, Si, 8, etc. are commonly used. Looking at the abrasion resistance of the protective film that slides on the thermal recording paper during operation, the protective film made of TaA has low hardness and poor abrasion resistance, whereas the protective film made of SiC is chemically unstable and is not suitable for thermal recording. Reacts with paper's heat-sensitive agent, significantly reducing abrasion resistance. In addition, the protective film made of 5isN has extremely high hardness, chemical stability, and excellent abrasion resistance, but the internal stress generated within the protective film is large, and the protective film is easily damaged during operation. The heat-sensitive recording paper that slides under pressure causes cracks and film peeling over time, and has the drawbacks of damaging the heating resistor.
以上のように、従来のサーマルヘッドは、保護膜の耐摩
耗性、ある因は、耐亀裂性などに間題があることから、
寿命が短かいという欠点があった。As mentioned above, conventional thermal heads have problems with the wear resistance of the protective film, and partly due to the crack resistance.
The drawback was that it had a short lifespan.
本発明の目的は、上記従来技術の欠点を除き、耐摩耗性
、耐亀裂性に優れた保護膜を有し、長寿命化されたサー
マルヘッドを提供するにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a thermal head which eliminates the drawbacks of the prior art described above, has a protective film with excellent wear resistance and crack resistance, and has a long service life.
この目的を達成するために、本発明は、保護膜として、
Ｓｚ ｘＪＩｙＮ を主成分とする薄膜を用い、Ｘ値を
０５〜０９に、かつ、ｙ値を０４〜０．９に設定するよ
うにした点に特徴がある。To achieve this objective, the present invention provides, as a protective film,
The feature is that a thin film containing Sz xJIyN as a main component is used, and the X value is set to 05 to 09, and the y value is set to 04 to 0.9.
本発明者等は、 Ｓｉ、Ｎ、が、大きな膜硬度を有し、
耐摩耗性に優れた特性を有している点に着し、残る問題
点として、耐亀裂性を改善することから、内部応力の小
さい薄膜の生成につ−て検討を加えた。その結果、Ｓｉ
３Ｎ、に近い硬度を有して耐摩耗性に優れ、薄膜の内部
応力が小さくて耐亀裂性に優れた５ｉ−Ｅ−Ｎ系の薄膜
が、サーマルヘッドの保護膜として好適であることがわ
かった。The present inventors have discovered that Si, N, have large film hardness,
Since it has excellent wear resistance, the remaining problem was to improve crack resistance, so we investigated the creation of a thin film with low internal stress. As a result, Si
It was found that a 5i-E-N thin film, which has a hardness close to 3N, has excellent wear resistance, and has low internal stress and excellent crack resistance, is suitable as a protective film for a thermal head. Ta.
Ｓ １−ｊ７−Ｎ系の薄膜を生成するためには、プラズ
マ中の化合物気体の分解、反応を低温頭載で行なうプラ
ズマ気相成長法（以下、Ｐ−ＣＶＤ法という）を採用す
る。使用する化合物気体は、モノシラン（Ｓ ｉＨ，）
、アンモニア（ＮＨｓ）、窒素（Ｎ、）の混合気体であ
り、生成条件（ＲＦパワー、温度。In order to produce a S 1-j7-N-based thin film, a plasma vapor deposition method (hereinafter referred to as P-CVD method) is employed in which a compound gas in plasma is decomposed and reacted at a low temperature overhead. The compound gas used is monosilane (S iH,)
, ammonia (NHs), and nitrogen (N, ), and the generation conditions (RF power, temperature).
ガス流量比、圧力など）によって、ＳＬ ＪｙＮで示さ
れる任意の特性を有する薄膜を生成することができる。Depending on the gas flow rate ratio, pressure, etc.), a thin film having any properties shown in SL JyN can be produced.
従来技術におけるＳ ｉ ０．７７’ ａＯ，、Ｓ ｉ
ｓＡ’、の夫々の薄膜と、Ｓｚ ｘＥｙＮ （ただＬ
７、ｘ ＝ ０．５〜０．９ 、 ｙ ＝０．４〜０９
）とについて、それらの内部応力、ヌープ硬度を比較し
た結果を、第１表に示す。S i 0.77' aO,, S i in the prior art
sA', and Sz xEyN (just L
7, x = 0.5~0.9, y = 0.4~09
), the results of comparing their internal stress and Knoop hardness are shown in Table 1.
（第１表） （注）表中内部応力の角の値は圧縮応力を示す。(Table 1) (Note) The value at the corner of internal stress in the table indicates compressive stress.
、 ３
第１表によると、５ｉ３ｙ〜Ｎの薄膜は、内部応力、硬
度ともにＳｉＯ，，５ｉ３０４の夫々の薄膜の中間的な
物性値を有１−１耐摩耗性、耐亀裂性ともに優れている
。なお、ＳＬ ｘＨｙＡ’ のＸ値、ｙ値は。, 3 According to Table 1, the thin films of 5i3y~N have physical property values that are intermediate to those of the respective thin films of SiO, , and 5i304 in terms of internal stress and hardness, and are excellent in both wear resistance and crack resistance. . Note that the X value and y value of SL xHyA' are as follows.
赤外吸収、質量分析かどの一般的な分析手法によシ、定
量化される。It is quantified by common analytical techniques such as infrared absorption and mass spectrometry.
本発明は、以上の点にもとづいてなされたものであって
、以下、本発明の実施例を図面について説明する。The present invention has been made based on the above points, and embodiments of the present invention will be described below with reference to the drawings.
図は本発明によるサーマルヘッドの一部ｍ例を示す断面
図であって、１は基板、２け発熱抵抗体、３，３′は電
極層、４は保護膜である。The figure is a sectional view showing a part of a thermal head according to the present invention, in which 1 is a substrate, 2 heating resistors, 3 and 3' are electrode layers, and 4 is a protective film.
同図において、アルミナセラミックなどの基板１上に、
Ｃｒ−５ｉ薄膜からなる発熱抵抗体２とその上に一部を
除いてＣτ／Ａｔ積層膜の電極層３゜３′が形成されて
いる。さらに、発熱抵抗体２と電極層６．５′と被覆す
るように、ＳＬ、ｖＨｙＮ （ただし、ｘ＝０５〜０
．９ 、 ｙ ＝ ０．４刈９）薄膜の保設膜４が設け
られている。In the figure, on a substrate 1 such as alumina ceramic,
A heating resistor 2 is formed of a Cr-5i thin film, and an electrode layer 3.3' of a C.tau./At laminated film is formed thereon except for a portion thereof. Furthermore, SL, vHyN (where x=05 to 0
．． 9, y = 0.4 9) A thin retention film 4 is provided.
この実施例では、基板１、発熱抵抗体２．電、 ４ 。In this embodiment, a substrate 1, a heating resistor 2. Electric, 4.
極層３．保護膜４により感熱記録紙（図示せず）との当
接面を形成し、電＠Ｌ３１発勢抵抗体２゜電極３′を通
して電流を流すことにより、発熱抵抗体２の電極層３，
３′に接触しない部分が発熱する。Extreme layer 3. The protective film 4 forms a contact surface with a thermal recording paper (not shown), and by passing current through the electrode 3' of the heating resistor 2, the electrode layer 3 of the heating resistor 2,
The part that does not touch 3' generates heat.
発熱抵抗体２、電極層６，３′は、蒸着、スパッタリン
グなどの真空成膜法によ多形成され、保護膜４は、前述
のように、 Ｐ−ＣＶＤ法によ多形成される。The heating resistor 2 and the electrode layers 6, 3' are formed by a vacuum film forming method such as vapor deposition or sputtering, and the protective film 4 is formed by a P-CVD method as described above.
Ｐ ＣＶＤ法により保護膜４を形成するだめの混合気体
としては、Ｓ ｉＨ，、ＮＢ、 ｂよびＮ、が用いられ
、生成条件としては１次のように設定した。SiH, NB, b, and N were used as the mixed gas for forming the protective film 4 by the PCVD method, and the generation conditions were set as follows.
ＲＦパワー ： ４５０Ｆ
生成温度 ＝１５０℃〜２５０℃
反応ガス比（Ｓｉ仄Ａ属）；０６
ガス圧力 ： ０．２〜ｔＯＴｏｒｒかかる生成条件
により生成されたＳｉｗＨｙＮ薄膜の０．５くべＯ，９
、０，４（ｙ（０，９である保護膜４を、発熱抵抗体２
上に膜厚４μで形成した。RF power: 450F Generation temperature: 150°C to 250°C Reaction gas ratio (Si to A group): 0.6 Gas pressure: 0.2 to tOTorr 0.5 x O,9 of the SiwHyN thin film produced under these formation conditions
, 0,4(y(0,9), the heat generating resistor 2
A film with a thickness of 4 μm was formed on top.
以上のようにして得られたサーマルヘッドの評価試験を
行な−、保護膜４の耐摩耗性、耐亀裂性、および１発熱
抵抗体２の抵抗値変化率を調べた。An evaluation test was conducted on the thermal head obtained as described above, and the wear resistance and crack resistance of the protective film 4 and the rate of change in resistance value of the heat generating resistor 2 were examined.
通電条件は
パルス電圧印加時間： １．０ｍ５ｅｃパルス周期
：１０ｍ、５１ｇＣ印加電力 ：０．＋Ｓ
Ｆ／抵抗体で、このときの発熱抵抗体２の形状は、抵抗
体幅 ：９０μｍ
抵抗体長 ：２５０μｍ
で、主走査密度は８ドツト／ｍｍ である、これらの条
件により、感熱記録紙ｆ５０ｋｍ走行させ、パルスを５
０００万回印加１〜たところ、保護膜４の摩耗量は０８
μｍであり１発熱抵抗体２の抵抗値変化率は、初期値に
対１−て５％以下であった。甘た、保護膜４には、亀裂
が生じなかった。The energization conditions are pulse voltage application time: 1.0m5ec pulse cycle
: 10m, 51gC Applied power: 0. +S
F/resistor, the shape of the heating resistor 2 at this time is: resistor width: 90 μm, resistor length: 250 μm, and main scanning density is 8 dots/mm. Under these conditions, thermal recording paper f was run for 50 km. , pulse 5
When the application was applied 1 to 0 million times, the wear amount of the protective film 4 was 0.8
μm, and the rate of change in resistance value of the heating resistor 2 was 1-5% or less with respect to the initial value. Unfortunately, no cracks were generated in the protective film 4.
この実施例による諸物件と、Ｓｉｎ、７７〜０．積層膜
およびＳ ｉ、 ＃、膜の夫々による保藤膜のサーマル
ヘッドの諸物件とを比較した結果を、次の第２表に示す
。Properties according to this example and Sin, 77-0. The following Table 2 shows the results of a comparison between various properties of the Hoto film thermal head made of the laminated film and the Si, # film.
（第２表）
たたし、ｘ＝０５〜０．９ 、 ｙ ＝ ０．４〜０
９である。(Table 2) Tatami, x=05~0.9, y=0.4~0
It is 9.
以上説明したように、本発明によれば、保護膜の耐摩耗
性、耐亀裂性が優れ、摩耗量は０１１ｔ１ｎ／ ｋｍ
以下であり、寿命全太幅に延ばすことができ、捷た、保
静膜の膜厚を大幅に低減化することができて、保護膜の
成膜時間を大幅に短縮することができ、上記従来技術の
欠点を除いて優れた機能のサーマルヘッドを低コストで
提供することができる。As explained above, according to the present invention, the protective film has excellent wear resistance and crack resistance, and the wear amount is 011t1n/km.
It is possible to extend the service life to a full width, and it is possible to significantly reduce the thickness of the preservative film when it is broken, and it is possible to significantly shorten the time for forming the protective film. It is possible to provide a thermal head with excellent functionality at a low cost without the drawbacks of the conventional technology.
図は本発明によるサーマルヘッドの一実施例を示す断面
図である。The figure is a sectional view showing an embodiment of a thermal head according to the present invention.
Claims (1)
により被覆されてなるサーマルヘッドにおいて、該保護
膜はＳｉｘＥｙＮ を主成分と１〜、該Ｘ値を０５〜０
９、かつ、該ｙ値を０．４〜０，９に設定したことを性
徴とするサーマルヘッド。In a thermal head in which a heating resistor layer is provided on a substrate, and the heating resistor layer is covered with a protective film, the protective film contains SixEyN as a main component and has an X value of 05 to 0.
9 and whose sexual characteristics are that the y value is set between 0.4 and 0.9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201924A JPS5993366A (en) | 1982-11-19 | 1982-11-19 | Thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57201924A JPS5993366A (en) | 1982-11-19 | 1982-11-19 | Thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5993366A true JPS5993366A (en) | 1984-05-29 |
Family
ID=16449048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57201924A Pending JPS5993366A (en) | 1982-11-19 | 1982-11-19 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5993366A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5119112A (en) * | 1988-03-28 | 1992-06-02 | Kabushiki Kaisha Toshiba | Heat-resistant insulating substrate, thermal printing head, and thermographic apparatus |
-
1982
- 1982-11-19 JP JP57201924A patent/JPS5993366A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5119112A (en) * | 1988-03-28 | 1992-06-02 | Kabushiki Kaisha Toshiba | Heat-resistant insulating substrate, thermal printing head, and thermographic apparatus |
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