JPS599120B2 - PROM protection circuit due to incorrect programming of PROM writer - Google Patents

PROM protection circuit due to incorrect programming of PROM writer

Info

Publication number
JPS599120B2
JPS599120B2 JP55126956A JP12695680A JPS599120B2 JP S599120 B2 JPS599120 B2 JP S599120B2 JP 55126956 A JP55126956 A JP 55126956A JP 12695680 A JP12695680 A JP 12695680A JP S599120 B2 JPS599120 B2 JP S599120B2
Authority
JP
Japan
Prior art keywords
prom
voltage
socket
power supply
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55126956A
Other languages
Japanese (ja)
Other versions
JPS5753892A (en
Inventor
作行 水野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55126956A priority Critical patent/JPS599120B2/en
Publication of JPS5753892A publication Critical patent/JPS5753892A/en
Publication of JPS599120B2 publication Critical patent/JPS599120B2/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Read Only Memory (AREA)

Description

【発明の詳細な説明】 本発明は、PROM(プログラマブルリードオンリーメ
モリ)に書き込むPROMライタ(wrlter)に関
し、PROMライタのソケットに挿入されたPROMに
電源を供給する電源回路において、ソケットに逆挿入さ
れたPROMの破壊を防止し、かつオペレータに注意を
喚起するPROMライ 夕の改良された手段を提供する
ことをその目的とする。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a PROM writer (wrlter) that writes to a PROM (programmable read-only memory). The purpose of the present invention is to provide an improved means for preventing PROMs from being damaged and alerting the operator to such problems.

一般にPROMは電源ピンのe、Θに電圧を印加するこ
とにより動作することは周知の事実であるが、PROM
ライタの様に頻繁に操作する場所にはソケット方式にな
つていて、よく誤つてPROMソケットに逆に挿入する
ことがある。
It is a well-known fact that PROMs generally operate by applying voltage to the power supply pins e and Θ.
Places that are frequently operated, such as writers, use a socket type, and it is common to accidentally insert the PROM into the socket in the wrong direction.

従来は、PROMの外殼ケースの一部を切り欠きを設け
てその部分を目安にしたり、あるいはロック式ICソケ
ット等では挿入方向に矢示の注意銘板を貼り付けるよう
な手段を用いていた。
In the past, measures were used such as cutting out a part of the PROM outer case and using that part as a guide, or attaching a caution plate with an arrow in the insertion direction for lock type IC sockets and the like.

しかしこれでは不充分で誤挿入は避けられなかつた。P
ROMの電源ピンに対して逆に電圧を印加した場合、破
壊する虞れがあり、その事前の対策が要望されている。
ところで、後述する第1図、第2図の様に、PROMの
電源ピン4、eに順方向に電圧を印加したときと、逆方
向に電圧を印加したときとでは、インピーダンス特性の
違いにより消費電流の相異が見い出せる。
However, this was insufficient and erroneous insertions were unavoidable. P
If a reverse voltage is applied to the power supply pin of the ROM, there is a risk of destruction, and preventive measures are required.
By the way, as shown in Figures 1 and 2, which will be described later, the power consumption increases due to the difference in impedance characteristics when a voltage is applied in the forward direction and when the voltage is applied in the reverse direction to the power supply pins 4 and e of the PROM. Differences in current can be found.

第1図は、一般のPROMの消費電流の特性を示す図で
ある。
FIG. 1 is a diagram showing the current consumption characteristics of a general PROM.

曲線5の11は順方向に、曲線5の12は逆方向に電圧
を印加した場合の消費電流である。PROMに電圧V1
を印加したとき曲線11では電流IF、、曲線12では
電流IR4が流れる。
11 of the curve 5 is the current consumption when the voltage is applied in the forward direction, and 12 of the curve 5 is the current consumption when the voltage is applied in the reverse direction. Voltage V1 to PROM
When this is applied, current IF flows in curve 11, and current IR4 flows in curve 12.

それから、電圧V2を印加すると、曲線12ではPRO
Mが破壊する。そこで、電流1R1>1F1より電流1
R1>11〉IFIなる基準となる電流11を設けるこ
とにより、PROMの誤挿入かどうかの判定ができる。
第2図は、PROMの特性がメーカにより異なつている
が、その一例を挙げたものであり、曲線57の21は順
方向に、曲線55の22は逆方向に電圧を印加した場合
の消費電流を示す特性図である。
Then, when voltage V2 is applied, in curve 12 PRO
M destroys it. Therefore, from current 1R1>1F1, current 1
By providing a reference current 11 such that R1>11>IFI, it is possible to determine whether the PROM has been inserted incorrectly.
Figure 2 shows an example of PROM characteristics that vary depending on the manufacturer. 21 of curve 57 is the current consumption when voltage is applied in the forward direction, and 22 of curve 55 is the current consumption when voltage is applied in the reverse direction. FIG.

いずれにせよ、順方向と逆方向とでは特性が違うもので
ある。
In any case, the characteristics are different in the forward direction and in the reverse direction.

第3図は、本発明の一実施例のプロツク線図である。FIG. 3 is a block diagram of one embodiment of the present invention.

1,7,14〜20,23〜26は抵抗、2,3,8,
9はトランジスタ、4はPROM6を挿入するICソケ
ツト、5はコンパレータ、10はブザー、13はコンデ
ンサー27〜29はダイオード、30はLED(発光ダ
イオード)、31,Vcは電源、32は電圧印加信号、
33は逆挿入信号、Refは基準電圧である。
1, 7, 14-20, 23-26 are resistances, 2, 3, 8,
9 is a transistor, 4 is an IC socket into which the PROM 6 is inserted, 5 is a comparator, 10 is a buzzer, 13 is a capacitor, 27 to 29 are diodes, 30 is an LED (light emitting diode), 31, Vc is a power supply, 32 is a voltage application signal,
33 is a reverse insertion signal, and Ref is a reference voltage.

PROM6をソケツト4に挿入していない初期状態では
、電圧印加信号32は0V(ボルト)になつていて、ト
ランジスタ2,3はオフ(0FF)の状態にある。
In the initial state when the PROM 6 is not inserted into the socket 4, the voltage application signal 32 is 0V (volt), and the transistors 2 and 3 are in an off (0FF) state.

従つて、電源31より、、なる電圧が高抵抗1を介して
ソケツト4に供給され、かつコンパレータ5のe端子に
入力されるが、コンパレータ5の入力インピーダンスは
高いため、基準電圧Refより高い電圧となり、ゆえに
コンパレータ5の出力は常時低レベルになつている。つ
いで、第1図の特性を示すPROM6をソケツト4に順
方向に挿入すると、PROMに供給される電圧0utは
電圧INを高抵抗1とPROM6の内部抵抗7で分圧さ
れた電圧となるが、コンパレータ5の1端子の基準電圧
Refよりも高レベルであるため、コンパレータ5の出
力は低レベルのま\である。それからPROM6をソケ
ツト4に逆方向に挿入すると、PROM6に供給される
電圧0utは電源電圧INが分圧された電圧となるが、
PROM6の内部抵抗7は前者つまり順方向挿入時と比
して小さいため、電圧0utは基準電圧Retより低く
、コンパレータ5の出力は高レベルとなり、警報用のL
ED3Oが発光しさらにブザー10等が鳴動し、オペレ
ータに注意を喚起する。
Therefore, from the power supply 31, a voltage of Therefore, the output of the comparator 5 is always at a low level. Next, when the PROM 6 exhibiting the characteristics shown in FIG. 1 is inserted into the socket 4 in the forward direction, the voltage 0ut supplied to the PROM becomes a voltage obtained by dividing the voltage IN by the high resistance 1 and the internal resistance 7 of the PROM 6. Since the level is higher than the reference voltage Ref at one terminal of the comparator 5, the output of the comparator 5 remains at a low level. Then, when the PROM 6 is inserted into the socket 4 in the opposite direction, the voltage 0ut supplied to the PROM 6 becomes a voltage obtained by dividing the power supply voltage IN.
Since the internal resistance 7 of the PROM 6 is smaller than that in the former case, that is, when inserted in the forward direction, the voltage 0ut is lower than the reference voltage Ret, the output of the comparator 5 is at a high level, and the alarm L
The ED3O emits light and the buzzer 10 etc. sounds to alert the operator.

抵抗1は高抵抗であるためPROM6に印加される電圧
、電流を抑える働きをし、PROM6は僅かしか電圧が
か\らずPROMの破壊を防止することができる。PR
OM6の書き込み、あるいは読み出しを行なう時は、電
圧印加信号32を高レベルにすることにより、逆挿入信
号33が低レベルの時のみトランジスタ2,3がオンし
て電源電圧INがPROM6に印加されることになる。
Since the resistor 1 has a high resistance, it works to suppress the voltage and current applied to the PROM 6, and only a small voltage is applied to the PROM 6, so that destruction of the PROM can be prevented. PR
When writing or reading OM6, by setting the voltage application signal 32 to a high level, transistors 2 and 3 are turned on only when the reverse insertion signal 33 is at a low level, and the power supply voltage IN is applied to the PROM6. It turns out.

かくして本発明によれば、PROM6がソケツト4へ逆
方向挿入時には、コンパレータ5の出力の逆挿入信号3
3が高レベルとなり、警報を発しオペレータに告知させ
るとともに、電圧印加信号32を与えでも逆挿入信号3
3が高レベルのためトランジスタ8はオン、したがつて
トランジスタ3と2はオ;7であるから、電源電圧VI
Nは直接に電圧0utとしてPROM6に印加されず破
壊から免れる。
Thus, according to the present invention, when the PROM 6 is inserted into the socket 4 in the reverse direction, the reverse insertion signal 3 of the output of the comparator 5 is
3 becomes high level, an alarm is issued and the operator is notified, and even if the voltage application signal 32 is applied, the reverse insertion signal 3
3 is high level, transistor 8 is on, therefore transistors 3 and 2 are off; 7, so the power supply voltage VI
N is not directly applied to the PROM 6 as a voltage of 0ut, thereby avoiding destruction.

しかも、PROM6がソケツト4へ順方向挿入されてい
るときは、警報も出ずコンパレータ5の出力は低レベル
であるので、電圧印加信号32が与えられると、トラン
ジスタ3,2がオンで電源電圧VINがPROM6へ印
加される0utとなり書き込み、読み出しがなされうる
。したがつで、オペレータはPROM6のソケツト4へ
の挿入に過大な注意をつねに払う必要がなく、PROM
6の書き込み、読み出しの作業性が向上し、PROM6
の逆挿入による破壊を未然に完全に防止し、PROM6
を保護することができる。
Furthermore, when the PROM 6 is inserted forward into the socket 4, no alarm is issued and the output of the comparator 5 is at a low level, so when the voltage application signal 32 is applied, the transistors 3 and 2 are turned on and the power supply voltage VIN becomes 0ut, which is applied to the PROM 6, and writing and reading can be performed. Therefore, the operator does not always have to pay too much attention to the insertion of PROM 6 into socket 4;
The workability of writing and reading PROM6 has been improved.
This completely prevents damage caused by reverse insertion of PROM6.
can be protected.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図、第2図はPROMへの印加電圧とその消費電流
の特性曲線、第3図は本発明の一実施例のプロツク線図
である。 1,7,14〜20,23〜26・・・・・・抵抗、2
.3,8,9・・・・・・トランジスタ、4・・・・・
・ICソケツト、5・・・・・・:コンパレータ、6・
・・・・・PROMllO・・・・・・ブザー、13・
・・・・・コンデンサ、27〜29・・・・・・ダイオ
ード、30・・・・・・LEDl3l,Vc・・・・・
・電源、32・・・・・・電圧印加信号、33・・・・
・・逆挿入信号、Vref・・・・・・基準電圧。
1 and 2 are characteristic curves of the voltage applied to the PROM and its current consumption, and FIG. 3 is a block diagram of an embodiment of the present invention. 1, 7, 14-20, 23-26...Resistance, 2
.. 3, 8, 9...Transistor, 4...
・IC socket, 5...: Comparator, 6.
・・・・・・PROMllO・・・・・・Buzzer, 13・
... Capacitor, 27-29 ... Diode, 30 ... LEDl3l, Vc ...
・Power supply, 32...Voltage application signal, 33...
...Reverse insertion signal, Vref...Reference voltage.

Claims (1)

【特許請求の範囲】 1 PROMの書き込みあるいは読み出しを行なうPR
OMライタの電源回路において、PROMがICソケッ
トに正常に挿入されたかどうかを検出する回路と、この
検出回路の出力によりICソケットに挿入されたPRO
Mに電源を供給する回路からの電圧を制御するようにし
た回路とを具備することを特徴とするPROMライタの
誤挿入によるPROM保護回路。 2 PROMがICソケットに順方向に挿入されたとき
はPROMに供給される電圧が基準電圧より高く両者を
比較したコンパレータ出力が低レベルとなり、PROM
への電圧印加信号があれば電源からの正常な電圧がPR
OMへ与えられ、PROMがICソケットに逆方向に挿
入されたときはPROMに供給される電圧が基準電圧よ
り低く両者を比較したコンパレータ出力が高レベルとな
つて警報回路を作動させるとともに、PROMへの電圧
印加信号があつても電源からは高抵抗を介した低い電圧
がPROMに与えられるようにしたことを特徴とする特
許請求の範囲第1項記載のPROMライタの誤挿入によ
るPROM保護回路。
[Claims] 1 PR for writing or reading PROM
In the power supply circuit of the OM writer, there is a circuit that detects whether the PROM is inserted into the IC socket normally, and the output of this detection circuit detects whether the PROM is inserted into the IC socket.
1. A PROM protection circuit against incorrect insertion of a PROM writer, characterized by comprising a circuit configured to control a voltage from a circuit that supplies power to a PROM writer. 2 When the PROM is inserted into the IC socket in the forward direction, the voltage supplied to the PROM is higher than the reference voltage and the comparator output that compares the two becomes a low level, and the PROM
If there is a voltage application signal to the power supply, the normal voltage from the power supply is PR.
When the PROM is inserted in the reverse direction into the IC socket, the voltage supplied to the PROM is lower than the reference voltage and the comparator output that compares the two becomes high level, activating the alarm circuit and sending the voltage to the PROM. 2. The PROM protection circuit according to claim 1, wherein a low voltage is applied to the PROM from a power supply via a high resistance even if a voltage application signal of 1 is applied.
JP55126956A 1980-09-12 1980-09-12 PROM protection circuit due to incorrect programming of PROM writer Expired JPS599120B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55126956A JPS599120B2 (en) 1980-09-12 1980-09-12 PROM protection circuit due to incorrect programming of PROM writer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55126956A JPS599120B2 (en) 1980-09-12 1980-09-12 PROM protection circuit due to incorrect programming of PROM writer

Publications (2)

Publication Number Publication Date
JPS5753892A JPS5753892A (en) 1982-03-31
JPS599120B2 true JPS599120B2 (en) 1984-02-29

Family

ID=14948050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55126956A Expired JPS599120B2 (en) 1980-09-12 1980-09-12 PROM protection circuit due to incorrect programming of PROM writer

Country Status (1)

Country Link
JP (1) JPS599120B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6013399A (en) * 1983-07-04 1985-01-23 Fanuc Ltd Operating method of power supply for rom
JPS60120725A (en) * 1983-12-05 1985-06-28 Shin Etsu Chem Co Ltd Organometallic copolymer and its production
WO1988005779A1 (en) * 1987-01-28 1988-08-11 Mitsui Toatsu Chemicals, Inc. Processes for preparing organosilicon compounds and silicon carbide
US5508363A (en) * 1987-01-28 1996-04-16 Mitsui Toatsu Chemicals, Incorporated Preparation process of organosilicon compounds and production of silicon carbide
US5620934A (en) * 1987-01-28 1997-04-15 Mitsui Toatsu Chemicals, Incorporated Production process of silicon carbide from organosilicon compounds
JPH01264695A (en) * 1989-02-09 1989-10-20 Toshiba Corp Prom protecting circuit by misinsertion of prom writer

Also Published As

Publication number Publication date
JPS5753892A (en) 1982-03-31

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