JPS5989762A - Power source for lab6 cathode for ion plating - Google Patents

Power source for lab6 cathode for ion plating

Info

Publication number
JPS5989762A
JPS5989762A JP19957182A JP19957182A JPS5989762A JP S5989762 A JPS5989762 A JP S5989762A JP 19957182 A JP19957182 A JP 19957182A JP 19957182 A JP19957182 A JP 19957182A JP S5989762 A JPS5989762 A JP S5989762A
Authority
JP
Japan
Prior art keywords
discharge
power source
cathode
power
ion plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19957182A
Other languages
Japanese (ja)
Other versions
JPH0257142B2 (en
Inventor
Joshin Uramoto
上進 浦本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP19957182A priority Critical patent/JPS5989762A/en
Publication of JPS5989762A publication Critical patent/JPS5989762A/en
Publication of JPH0257142B2 publication Critical patent/JPH0257142B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/24Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H01J37/241High voltage power supply or regulation circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To minimize the power loss due to series resistance and to improve the power efficiency in electric discharge with an LaB6 cathode for ion plating by carrying out the discharge using three power sources. CONSTITUTION:Gaseous discharge with an LaB6 cathode is carried out using a variable power source PT for applying a high-voltage current of low intensity at the beginning of discharge, a power source PH for applying a medium-voltage current of medium intensity in a cathode heating stage, and a power source PO for applying a low-voltage current of high intensity during stationary arc discharge. The changeover of the three power sources PT, PH, PO can be automated by utilizing diodes 7. Thus, discharge can be stabilized against a change of a discharge electrode with age.

Description

【発明の詳細な説明】 イオンプレーテングのプラズマ生成のために特許出願(
54−057f395と56−172888)のL a
 B 6陰極によるガス放電を行うとき、放電段階とし
てはグロー放電(放電開始)、準定常アーク放電(陰極
加熱)、定常アーク放電(大電流放電)の8段階がある
。先づ最初の放電開始段階ではパッシェンの法則から決
定されるような高電圧(〜600V)を必要とするが小
電流(<0.5A)でよく1次の陰極加熱段階では中間
電圧(〜200V )と中間電流(〜15A)を必要と
する。最終段階の定常アーク放電でイオンプレーテング
を順調に行うには150A以上で、放電々圧はtoov
前後必要である(ガスの種類に依存)。この3段階を一
つの電源で行い直列抵抗によって電圧を垂下させると、
電力損失が著しく大きくなり電力効率が悪化し、電源コ
ストも大きくなる。そこで図面のような三重源方式にす
れば、即ち、高電圧低電流電源(P、)、中間電圧中間
電流電源(PH)、低電圧大電流電源(P、)を併用す
れば直列抵抗による電力損失を最小にして電力効率を上
げることができる。また9図面のようにダイオードを利
用すれば三重源の推移を自動的に行うことができる。
[Detailed description of the invention] Patent application (
54-057f395 and 56-172888) La
When performing gas discharge using a B6 cathode, there are eight discharge stages: glow discharge (discharge start), quasi-steady arc discharge (cathode heating), and steady arc discharge (large current discharge). First, the initial discharge initiation stage requires a high voltage (~600V) as determined by Paschen's law, but a small current (<0.5A) is required and the first cathode heating stage requires an intermediate voltage (~200V). ) and intermediate current (~15A). In order to smoothly perform ion plating in the final stage of steady arc discharge, the discharge pressure must be 150A or more, and the discharge pressure must be too much.
It is necessary before and after (depending on the type of gas). If these three stages are performed with one power supply and the voltage is dropped by a series resistor,
Power loss becomes significantly large, power efficiency deteriorates, and power supply costs also increase. Therefore, if you use a triple source system as shown in the drawing, that is, if you use a high voltage, low current power source (P,), an intermediate voltage, intermediate current power source (PH), and a low voltage, large current power source (P,), the power will be generated by the series resistance. Power efficiency can be increased by minimizing losses. Further, if diodes are used as shown in Figure 9, the transition of the triple source can be performed automatically.

次に重要なことは陰極を含めた放電々極の永年変化と放
電開始から準定常アークへの移行の関係である。経験的
に放電々極の新し、い中は表面の荒い状態で電場が強く
か3りこの移行は容易であり1図面のP。は500V、
10mA程度で充分である。しかしながら長時間大電流
放電を行うと表面の荒さがなくなり初期電場が小さくな
るので放電開始から陰極加熱段階に移行するには0.5
A程度迄上げなければならない場合も生じて来る(陰極
の損傷を小さくするには最初の段階の電流はできるだけ
小−さい方がよいのであるが)。以上のように放電々極
の永年変化に応じて放電開始から陰極加熱段階への移行
対策を行った点も本電源の特徴である。即ち1図面でP
The next important thing is the relationship between the secular change of the discharge electrodes, including the cathode, and the transition from the start of discharge to a quasi-steady arc. Empirically, when the discharge electrode is new, the surface is rough and the electric field is strong, so the transition is easy, and the transition is easy. is 500V,
About 10 mA is sufficient. However, if a large current discharge is performed for a long time, the surface roughness disappears and the initial electric field becomes small, so the transition from the start of discharge to the cathode heating stage is 0.5
There may be cases where it is necessary to increase the current to about A (although it is better to keep the current at the initial stage as small as possible in order to minimize damage to the cathode). Another feature of this power supply is that, as described above, measures have been taken to transition from the start of discharge to the cathode heating stage in response to secular changes in the discharge electrodes. In other words, P in one drawing
.

の電圧、電流が可変である。The voltage and current are variable.

【図面の簡単な説明】[Brief explanation of the drawing]

図面はイオンプレーテング用L a B 6陰極のt:
めの電源の原理回路と放電々極への接続図である。図面
で1は放電開始用可変型高電圧低電流電源(PT)。2
は陰極加熱用中間電圧中間電流電源(PH)。3は定常
大電流放電用低電圧大電流電源(Po)。4は可変抵抗
。5は固定抵抗。 6は大型′可変抵抗。7はダイオード。8と9は放電中
間電極負荷抵抗。lOはL a B 6陰極。11は第
1中間電極。12は第2中間電極。13は放電陽極兼イ
オンプレーテングハース。14は放電開始スイッチ(数
秒以下のオン)。
The drawing shows the t of L a B 6 cathode for ion plating:
FIG. 3 is a diagram showing the principle circuit of the power source and the connection to the discharge electrodes. In the drawing, 1 is a variable high-voltage, low-current power supply (PT) for starting discharge. 2
is an intermediate voltage intermediate current power supply (PH) for cathode heating. 3 is a low voltage, large current power supply (Po) for steady large current discharge. 4 is a variable resistor. 5 is a fixed resistance. 6 is a large variable resistor. 7 is a diode. 8 and 9 are discharge intermediate electrode load resistances. lO is L a B 6 cathode. 11 is a first intermediate electrode. 12 is a second intermediate electrode. 13 is a discharge anode and ion plating hearth. 14 is a discharge start switch (on for several seconds or less);

Claims (1)

【特許請求の範囲】[Claims] 特許出願(54−057895と56−172388)
のL a B 6陰極の放電に関して、電力効率を高め
るために三重源構成にし、且つその放電々極の永年変化
に応じた放電安定対策を行った電源。
Patent applications (54-057895 and 56-172388)
Regarding the discharge of the L a B 6 cathodes, this power supply has a triple source configuration to increase power efficiency, and also takes measures to stabilize the discharge according to secular changes in the discharge electrodes.
JP19957182A 1982-11-12 1982-11-12 Power source for lab6 cathode for ion plating Granted JPS5989762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19957182A JPS5989762A (en) 1982-11-12 1982-11-12 Power source for lab6 cathode for ion plating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19957182A JPS5989762A (en) 1982-11-12 1982-11-12 Power source for lab6 cathode for ion plating

Publications (2)

Publication Number Publication Date
JPS5989762A true JPS5989762A (en) 1984-05-24
JPH0257142B2 JPH0257142B2 (en) 1990-12-04

Family

ID=16410040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19957182A Granted JPS5989762A (en) 1982-11-12 1982-11-12 Power source for lab6 cathode for ion plating

Country Status (1)

Country Link
JP (1) JPS5989762A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009238670A (en) * 2008-03-28 2009-10-15 Shinmaywa Industries Ltd Plasma device
JP2011088762A (en) * 2009-10-20 2011-05-06 Japan Siper Quarts Corp Apparatus of producing quartz glass crucible

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009238670A (en) * 2008-03-28 2009-10-15 Shinmaywa Industries Ltd Plasma device
JP2011088762A (en) * 2009-10-20 2011-05-06 Japan Siper Quarts Corp Apparatus of producing quartz glass crucible

Also Published As

Publication number Publication date
JPH0257142B2 (en) 1990-12-04

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