JPS5987852A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPS5987852A JPS5987852A JP57197112A JP19711282A JPS5987852A JP S5987852 A JPS5987852 A JP S5987852A JP 57197112 A JP57197112 A JP 57197112A JP 19711282 A JP19711282 A JP 19711282A JP S5987852 A JPS5987852 A JP S5987852A
- Authority
- JP
- Japan
- Prior art keywords
- defective
- power supply
- memory cell
- memory
- cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 230000015654 memory Effects 0.000 claims abstract description 106
- 230000002950 deficient Effects 0.000 claims abstract description 58
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 238000007664 blowing Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 101100110009 Caenorhabditis elegans asd-2 gene Proteins 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57197112A JPS5987852A (ja) | 1982-11-10 | 1982-11-10 | 半導体記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57197112A JPS5987852A (ja) | 1982-11-10 | 1982-11-10 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5987852A true JPS5987852A (ja) | 1984-05-21 |
JPH0462160B2 JPH0462160B2 (enrdf_load_stackoverflow) | 1992-10-05 |
Family
ID=16368923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57197112A Granted JPS5987852A (ja) | 1982-11-10 | 1982-11-10 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5987852A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6145490A (ja) * | 1984-08-09 | 1986-03-05 | Nec Corp | 半導体メモリ集積回路 |
JPS6166297A (ja) * | 1984-09-10 | 1986-04-05 | Nec Corp | 半導体メモリ |
JPH03189992A (ja) * | 1989-12-20 | 1991-08-19 | Toshiba Corp | 半導体記憶装置 |
JPH05507060A (ja) * | 1990-11-21 | 1993-10-14 | ザ・ダウ・ケミカル・カンパニー | フェニルカーボネート類の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS515540A (enrdf_load_stackoverflow) * | 1974-07-03 | 1976-01-17 | Shell Sekyu | |
JPS58102395A (ja) * | 1981-12-12 | 1983-06-17 | Nippon Telegr & Teleph Corp <Ntt> | 半導体記憶装置 |
JPS6240795A (ja) * | 1985-08-16 | 1987-02-21 | 富士通株式会社 | フラツトリ−ド付電子部品の取外し方法 |
-
1982
- 1982-11-10 JP JP57197112A patent/JPS5987852A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS515540A (enrdf_load_stackoverflow) * | 1974-07-03 | 1976-01-17 | Shell Sekyu | |
JPS58102395A (ja) * | 1981-12-12 | 1983-06-17 | Nippon Telegr & Teleph Corp <Ntt> | 半導体記憶装置 |
JPS6240795A (ja) * | 1985-08-16 | 1987-02-21 | 富士通株式会社 | フラツトリ−ド付電子部品の取外し方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6145490A (ja) * | 1984-08-09 | 1986-03-05 | Nec Corp | 半導体メモリ集積回路 |
JPS6166297A (ja) * | 1984-09-10 | 1986-04-05 | Nec Corp | 半導体メモリ |
JPH03189992A (ja) * | 1989-12-20 | 1991-08-19 | Toshiba Corp | 半導体記憶装置 |
JPH05507060A (ja) * | 1990-11-21 | 1993-10-14 | ザ・ダウ・ケミカル・カンパニー | フェニルカーボネート類の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0462160B2 (enrdf_load_stackoverflow) | 1992-10-05 |
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