JPS5986269A - 光電変換装置の作製方法 - Google Patents

光電変換装置の作製方法

Info

Publication number
JPS5986269A
JPS5986269A JP57196179A JP19617982A JPS5986269A JP S5986269 A JPS5986269 A JP S5986269A JP 57196179 A JP57196179 A JP 57196179A JP 19617982 A JP19617982 A JP 19617982A JP S5986269 A JPS5986269 A JP S5986269A
Authority
JP
Japan
Prior art keywords
electrode
laser
semiconductor
trimming
improve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57196179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS637032B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57196179A priority Critical patent/JPS5986269A/ja
Publication of JPS5986269A publication Critical patent/JPS5986269A/ja
Publication of JPS637032B2 publication Critical patent/JPS637032B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57196179A 1982-11-09 1982-11-09 光電変換装置の作製方法 Granted JPS5986269A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57196179A JPS5986269A (ja) 1982-11-09 1982-11-09 光電変換装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57196179A JPS5986269A (ja) 1982-11-09 1982-11-09 光電変換装置の作製方法

Publications (2)

Publication Number Publication Date
JPS5986269A true JPS5986269A (ja) 1984-05-18
JPS637032B2 JPS637032B2 (enExample) 1988-02-15

Family

ID=16353509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57196179A Granted JPS5986269A (ja) 1982-11-09 1982-11-09 光電変換装置の作製方法

Country Status (1)

Country Link
JP (1) JPS5986269A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196774A (ja) * 1984-10-17 1986-05-15 Fuji Electric Co Ltd 薄膜光電変換素子製造装置
JPS61210681A (ja) * 1986-02-20 1986-09-18 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
US4700463A (en) * 1985-09-09 1987-10-20 Fuji Electric Company Ltd. Non-crystalline semiconductor solar battery and method of manufacture thereof
US4734379A (en) * 1985-09-18 1988-03-29 Fuji Electric Corporate Research And Development Ltd. Method of manufacture of solar battery
JP2007273933A (ja) * 2006-03-31 2007-10-18 Kla-Tencor Technologies Corp 光起電力場における局在分路欠陥を検出し除去する方法及び装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196774A (ja) * 1984-10-17 1986-05-15 Fuji Electric Co Ltd 薄膜光電変換素子製造装置
US4728615A (en) * 1984-10-17 1988-03-01 Fuji Electric Company Ltd. Method for producing thin-film photoelectric transducer
US4700463A (en) * 1985-09-09 1987-10-20 Fuji Electric Company Ltd. Non-crystalline semiconductor solar battery and method of manufacture thereof
US4734379A (en) * 1985-09-18 1988-03-29 Fuji Electric Corporate Research And Development Ltd. Method of manufacture of solar battery
JPS61210681A (ja) * 1986-02-20 1986-09-18 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
JP2007273933A (ja) * 2006-03-31 2007-10-18 Kla-Tencor Technologies Corp 光起電力場における局在分路欠陥を検出し除去する方法及び装置

Also Published As

Publication number Publication date
JPS637032B2 (enExample) 1988-02-15

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