JPS5980982A - Thermal power generating element - Google Patents
Thermal power generating elementInfo
- Publication number
- JPS5980982A JPS5980982A JP58176478A JP17647883A JPS5980982A JP S5980982 A JPS5980982 A JP S5980982A JP 58176478 A JP58176478 A JP 58176478A JP 17647883 A JP17647883 A JP 17647883A JP S5980982 A JPS5980982 A JP S5980982A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous semiconductor
- temperature
- generating element
- electrode
- power generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 230000007613 environmental effect Effects 0.000 abstract description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010931 gold Substances 0.000 abstract description 5
- 229910052737 gold Inorganic materials 0.000 abstract description 5
- 229910052738 indium Inorganic materials 0.000 abstract description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 5
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052732 germanium Inorganic materials 0.000 abstract description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052717 sulfur Inorganic materials 0.000 abstract description 2
- 239000011593 sulfur Substances 0.000 abstract description 2
- 229910052714 tellurium Inorganic materials 0.000 abstract description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000470 constituent Substances 0.000 abstract 1
- 230000001052 transient effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005678 Seebeck effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
（技術分野）
本発明は、温度や、湿度等の環境雰囲気変化を検出する
、非晶質半導体を用いた熱発電素子に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a thermoelectric generating element using an amorphous semiconductor that detects changes in environmental atmosphere such as temperature and humidity.
（発明の背景）
従来、非晶質半導体は、熱を加えることにより、原子配
列が変化し、結晶化する性質や、その他各種の特徴的物
性を有することが知られているが、本発明者の研究によ
り、非晶質半導体は大きな抵抗温度特性を有すると共に
非晶質半導体を異種導電材料と組み合わせることにより
、前記異種導電材料部に、温度や湿度等の環境雰囲気変
化に対応する変化分起電圧特性を有することが確認され
た。(Background of the Invention) Conventionally, it has been known that amorphous semiconductors change their atomic arrangement and crystallize when heated, and have various other characteristic physical properties. Research has shown that amorphous semiconductors have large resistance-temperature characteristics, and that by combining an amorphous semiconductor with a different type of conductive material, changes can occur in the different type of conductive material in response to changes in the environmental atmosphere such as temperature and humidity. It was confirmed that it has voltage characteristics.
本発明は上述の特性を利用して、非晶質半導体を温度や
湿度等の環境雰囲気変化の検出に用いようとするもので
ある。The present invention utilizes the above-mentioned characteristics to use an amorphous semiconductor for detecting changes in environmental atmosphere such as temperature and humidity.
まず、環境雰囲気変化を検出する一例として、電気的な
温度測定手段について説明する。従来の電気的な温度測
定手段としては、サーミスターの如く抵抗温度係数の大
きな材料を用いて、温度による抵抗値の差を利用する方
法や、熱電対の如く、温度差による起電圧を利用する方
法が確立されている。First, an electrical temperature measuring means will be described as an example of detecting a change in the environmental atmosphere. Conventional electrical temperature measurement means use a material with a large temperature coefficient of resistance, such as a thermistor, to utilize the difference in resistance value due to temperature, or use a thermocouple, which utilizes the electromotive force caused by the temperature difference. The method is established.
これらの方法は、いずれも素子内部の熱平衡状態での抵
抗値、あるいは熱起電圧を検出する方法であり、温度の
過渡的変化を変化有無として検出するには不適であｌ）
、かかる目的には、平衡時に得られた検出信号を何らか
の外部信号処理装置によって微分繰作もしくは差分操作
等を加えなければならないという欠点を有していた。These methods all detect the resistance value or thermoelectromotive voltage in a state of thermal equilibrium inside the element, and are not suitable for detecting transient changes in temperature as the presence or absence of changes.
However, for this purpose, the detection signal obtained at the time of equilibrium has to be subjected to differential operation or difference operation using some external signal processing device.
（発明の目的）
本発明は、上述の欠点に鑑みなされたもので、非晶質半
導体が素子内部に温度勾配（熱非平衡状態）り生じたと
き素子のゼーベック効果により熱起電圧を発生する点に
着目し、温度や湿度等の環境雰囲気の過渡的変化を検出
する熱発電素子を提供することを目的とする。(Objective of the Invention) The present invention was made in view of the above-mentioned drawbacks, and when an amorphous semiconductor generates a temperature gradient (thermal non-equilibrium state) inside the device, a thermoelectromotive voltage is generated due to the Seebeck effect of the device. The object of the present invention is to provide a thermoelectric generating element that detects transient changes in the environmental atmosphere such as temperature and humidity.
（発明の実施例）
以下、本発明に係る熱発電素子の実施例を図面に従って
説明する。(Embodiments of the Invention) Examples of the thermoelectric power generating element according to the present invention will be described below with reference to the drawings.
第１図は本発明による熱発電素子の１例を示す断面図で
ある。図において１は熱発電素子、２はガラス基体、３
は酸化すず又はインジウムからなる電極、４は非晶質半
導体であって、・イオウ、テルル、ゲルマニウム、その
他の非晶質半導体を構成するに適した組成物により構成
される。５は金電極である。FIG. 1 is a sectional view showing an example of a thermoelectric generating element according to the present invention. In the figure, 1 is a thermoelectric generator, 2 is a glass substrate, and 3
is an electrode made of tin oxide or indium, and 4 is an amorphous semiconductor, which is made of sulfur, tellurium, germanium, or other composition suitable for forming an amorphous semiconductor. 5 is a gold electrode.
本発明による熱発電素子１は基体２上に酸化すず又はイ
ンジウム電極３を形成し、該電極３上に非晶質半導体４
を設け、更に該非晶半導体４上に金電極５を形成した構
造である。The thermoelectric power generating element 1 according to the present invention has a tin oxide or indium electrode 3 formed on a base 2, and an amorphous semiconductor 4 on the electrode 3.
In this structure, a gold electrode 5 is further formed on the amorphous semiconductor 4.
第２図、第３図は第１図に示した熱発電素子１に温度変
化を与えた時に酸化すず、インジウム電極３、と金電極
５との開に発生する起電圧を、酸化すず、インジウム電
極３側を基準電圧０（Ｖ）として示した特性図である。FIGS. 2 and 3 show the electromotive force generated between the tin oxide, indium electrode 3 and the gold electrode 5 when a temperature change is applied to the thermoelectric generating element 1 shown in FIG. FIG. 3 is a characteristic diagram showing the electrode 3 side with a reference voltage of 0 (V).
初めに第２図の特性図を参照して本発明の熱発電素子１
の特性を説明する。第２図において、（ａ）は、第１図
の素子上面（電極５側）を冷却したとき、すなわち温度
のマイナス変化（冷却）を与えた場合の特性を示してお
り、時刻ｔ、がらし、の直前迄は素子全体は十Ｘ（’Ｃ
）の第１の温度平衡状態に置かれており、起電圧は０（
Ｖ）である。時刻ｔ２に至って、＋ｙ（’Ｃ）の第２の
温度状態に置かれると、電極５と電極３（基体２）闇の
温度勾配に起因するゼーベック効果により起電圧を発生
する。起電圧は急激に高くなり、時刻ｔ、でピーク値ｐ
（ｖ）を示した後、第２の温度平衡状態に近ずくか呟徐
々に低くなって起電圧を失い０（Ｖ）となる。第２図（
ｂ）は温度のプラス変化（加熱）を与えた場合の特性を
示しており、第１の温度平衡状態か呟第２の温度平衡状
態に変化する時刻ｔ２で、（ａ）とは逆の起電圧が発生
し、同様の経過をたどる。First, with reference to the characteristic diagram in FIG.
Explain the characteristics of In Fig. 2, (a) shows the characteristics when the top surface of the element (electrode 5 side) in Fig. 1 is cooled, that is, when a negative temperature change (cooling) is applied. , the entire element is 10X ('C
), and the electromotive force is 0 (
V). At time t2, when the electrode 5 and the electrode 3 (substrate 2) are placed in a second temperature state of +y ('C), an electromotive force is generated due to the Seebeck effect caused by the dark temperature gradient. The electromotive force increases rapidly and reaches a peak value p at time t.
(v), the temperature gradually decreases as it approaches the second temperature equilibrium state, loses its electromotive force, and reaches 0 (V). Figure 2 (
b) shows the characteristics when a positive change in temperature (heating) is applied, and at time t2 when the first temperature equilibrium state changes to the second temperature equilibrium state, an event opposite to (a) occurs. A voltage is generated and follows a similar course.
第３図は第２図に示す時刻ｔ２の直前迄の第１の温度平
衡状態と時刻ｔ２以降の第２の温度平衡状態との温度変
化分に対応した起電圧のピック値Ｐ（Ｖ）を示す特性図
であって、縦軸は起電圧、横軸は温度変化分を示してお
り、温度変化分が大きくなる程起電圧のピーク値Ｐ（■
）が大きくなることが判る。従って、第２図、第３図の
特性図から明らかな如く、熱発電素子１は温度変化分に
対応した起電圧を過渡出力として発生することがわかる
。Figure 3 shows the pick value P (V) of the electromotive force corresponding to the temperature change between the first temperature equilibrium state immediately before time t2 and the second temperature equilibrium state after time t2 shown in Figure 2. In this characteristic diagram, the vertical axis shows the electromotive force, and the horizontal axis shows the temperature change.
) becomes larger. Therefore, as is clear from the characteristic diagrams of FIGS. 2 and 3, it can be seen that the thermoelectric generating element 1 generates an electromotive voltage corresponding to the temperature change as a transient output.
従って、本素子の池の応用例と員て本発明による熱発電
素子１を用いて湿度の過渡的変化を検知する事も可能で
ある。−例として高湿度状態に置かれていた熱発電素子
１を同一温度の低湿度状態に移行した場合について説明
すると熱発電素子１に付着していた水分が低湿度状態で
蒸発し、熱電素子の温度が下げられ第２図（、）と同様
の過渡的起電圧を発生することとなる。Therefore, it is also possible to detect transient changes in humidity using the thermoelectric generating element 1 according to the present invention as an example of the application of the present element to a pond. - As an example, let us explain the case where the thermoelectric generating element 1 which has been placed in a high humidity state is transferred to a low humidity state at the same temperature.The moisture attached to the thermoelectric generating element 1 evaporates in the low humidity state, and the thermoelectric element The temperature is lowered and a transient electromotive force similar to that shown in FIG. 2 (,) is generated.
（発明の効果）
上述の如く、本発明による熱発電素子は、温度や湿度等
の環境雰囲気の第１の平衡状態から別の第２の平衡状態
に変化した時の該変化量に対応した起電圧を過渡出力と
して発生するものであって、環境雰囲気の過渡的変化を
検出するのに用（・て好適であり、従来の温度や湿度の
環境雰囲気を検知又は測定する装置にはみられない効果
を有してｂ・る。(Effects of the Invention) As described above, the thermoelectric generating element according to the present invention has an activation effect corresponding to the amount of change when the environmental atmosphere such as temperature or humidity changes from a first equilibrium state to a different second equilibrium state. It generates voltage as a transient output and is suitable for detecting transient changes in the environmental atmosphere, and is not found in conventional devices that detect or measure the environmental atmosphere such as temperature or humidity. It has an effect.
なお、本発明による熱発電素子の１例として材料をあげ
て説明したが、その材料に限定されるものではない。ま
た、検出信号の処理に増幅装置等を内蔵せしめることも
可能である。Although the material has been described as an example of the thermoelectric generating element according to the present invention, the present invention is not limited to this material. It is also possible to incorporate an amplifier or the like for processing the detection signal.
第１図は本発明による熱発電素子の１実施例を示す断面
図、第２図、第３図は前記熱発電素子の電極間に発生す
る起電圧の特性図である。
１・・・熱発電素子、２・・・ガラス基体、３・・・酸
化すず又はインジウム電極、４・・・非晶質半導体、５
・・・金電極。FIG. 1 is a sectional view showing one embodiment of a thermoelectric generating element according to the present invention, and FIGS. 2 and 3 are characteristic diagrams of an electromotive force generated between electrodes of the thermoelectric generating element. DESCRIPTION OF SYMBOLS 1... Thermoelectric power generating element, 2... Glass substrate, 3... Tin oxide or indium electrode, 4... Amorphous semiconductor, 5
...Gold electrode.
Claims (1)
基体に装着した構成を備え、前記電極間の非晶質半導体
に温度勾配を生じさせることにより熱起電圧を発生する
ことを特徴とする熱発電素子。(1) A structure in which an amorphous semiconductor has electrodes on both sides and one side is attached to a base, and a thermoelectromotive voltage is generated by creating a temperature gradient in the amorphous semiconductor between the electrodes. A thermoelectric power generating element featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58176478A JPS5980982A (en) | 1983-09-26 | 1983-09-26 | Thermal power generating element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58176478A JPS5980982A (en) | 1983-09-26 | 1983-09-26 | Thermal power generating element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11914876A Division JPS5344072A (en) | 1976-10-04 | 1976-10-04 | Detector element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5980982A true JPS5980982A (en) | 1984-05-10 |
Family
ID=16014366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58176478A Pending JPS5980982A (en) | 1983-09-26 | 1983-09-26 | Thermal power generating element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5980982A (en) |
-
1983
- 1983-09-26 JP JP58176478A patent/JPS5980982A/en active Pending
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