JPS5979444A - Optical memory element - Google Patents
Optical memory elementInfo
- Publication number
- JPS5979444A JPS5979444A JP57190335A JP19033582A JPS5979444A JP S5979444 A JPS5979444 A JP S5979444A JP 57190335 A JP57190335 A JP 57190335A JP 19033582 A JP19033582 A JP 19033582A JP S5979444 A JPS5979444 A JP S5979444A
- Authority
- JP
- Japan
- Prior art keywords
- film
- memory
- oxidation
- easily oxidizable
- rare earth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B7/2548—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of inorganic materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B2007/25408—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of inorganic materials
- G11B2007/25411—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Abstract
Description
【発明の詳細な説明】 く技術分野〉 本発明は追加記録゛可能な光記憶素子に関する。[Detailed description of the invention] Technical fields> The present invention relates to an optical storage element capable of additional recording.
〈従来技術〉
近年、大著;j1.高密度、高速アクセス化の可能なメ
モリ素子として光記憶素子の研究開発が活発に行なわれ
ている。<Prior art> In recent years, major publications; j1. Optical storage devices are being actively researched and developed as memory devices capable of high-density and high-speed access.
しかし光記−1,t?素子の記憶媒体を構成する物質に
は酸化によって特性劣化するものが多く、その点が実用
化を1泪んでいた。記憶媒体の酸化防止の為の手法とし
て次の2通りのものが知られている。But Kouki-1, t? Many of the materials that make up the storage medium of the device have characteristics that deteriorate due to oxidation, which has hindered their practical application. The following two methods are known as methods for preventing oxidation of storage media.
一つは記憶媒体形成用の基体と保護用基体とを記憶媒体
を内側に配置してスペーサを介して貼り合わせその間隙
に不活性ガスを充填する構造(エアザンドイッチ構造)
とする手法であり、他の一つは基体上に記憶媒体を被覆
形成し更にその上に高分子材*ミ1に代表される保護層
を形成した構造とする手法である。しかし、以上の2手
法を用いた場合においても記憶媒体形成時、保護層形成
時、貼り合わせ工程時等に混入する酸素に刻しては無力
であったし、上記2手法の構造の素子完成後においても
外気からの侵入酸素によって記憶媒体は酸化された。One is a structure in which a base for forming a storage medium and a base for protection are bonded together via a spacer with the storage medium placed inside, and the gap between them is filled with an inert gas (air-and-switch structure).
Another method is to form a structure in which a storage medium is coated on a substrate and a protective layer typified by a polymeric material *Mi1 is formed thereon. However, even when the above two methods were used, they were powerless against oxygen mixed in during the formation of the storage medium, the formation of the protective layer, the bonding process, etc., and the device with the structure of the above two methods was completed. Even later, the storage medium was oxidized by oxygen entering from the outside air.
〈目的〉
本発明は上記従来技術の問題点を解決する為に完配1.
G素子の構造を、基板と、′re、”I’e低級酸化物
、有機染料等の追加記録可能な記憶膜と、′ri。<Purpose> The present invention aims to solve the problems of the above-mentioned prior art by: 1.
The structure of the G element is composed of a substrate, a storage film capable of recording additional materials such as lower oxides, organic dyes, and 'ri.
Mg、Be、炭素、希土類金属等の酸化容易性物質膜と
が層状構造をなすものとし、上記酸化容易性物質膜によ
って侵入する酸素を吸収せしめ、記憶膜の酸化を極力減
少せんとするものである。It has a layered structure with a film of easily oxidizable substances such as Mg, Be, carbon, and rare earth metals, and the film of easily oxidizable substances absorbs oxygen that enters, thereby reducing oxidation of the memory film as much as possible. be.
〈実施例〉 リ、下水発明に係る光記憶素子の実施例について。<Example> Regarding the embodiments of the optical storage device according to the sewage invention.
詳細に説明する。Explain in detail.
実施例(1)
第1■1に本発明に係る光記憶素子の実施例(1)の側
面図を示す。1はガラス、合成樹脂等からなる支持基体
、2はi’ e 、 T e低級酸化物、有機染料等の
利質からなる追加記録Of能な記憶膜、3はTi。Example (1) 1.1 shows a side view of Example (1) of the optical storage element according to the present invention. 1 is a support base made of glass, synthetic resin, etc.; 2 is a memory film capable of additional recording made of a material such as i'e, Te lower oxide, or organic dye; and 3 is Ti.
Mg、I3e、 炭素、希土類金属等の材質からなる酸
化容易性物質膜である。酸化容易性物質膜3の酸素吸収
能により外気から侵入する酸素及び素子内部に存在する
酸素が上記酸化容易性物質膜3にて消費される。従って
記憶1漢2の酸化が抑制され酸化による劣化が防止され
るものである。It is an easily oxidizable substance film made of materials such as Mg, I3e, carbon, and rare earth metals. Due to the oxygen absorption ability of the easily oxidizable material film 3, oxygen that enters from the outside air and oxygen that exists inside the device is consumed by the easily oxidizable material film 3. Therefore, oxidation of memory 1 and 2 is suppressed and deterioration due to oxidation is prevented.
実施例(2)
第2は1に本発明に係る光記憶素子の実施例(2)の側
面図を示す。4はガラス、合成樹脂等からなる支持基体
、5は′I″e 、 T e低級酸化物、有機染料等の
祠41からなる追加記録可能な記憶11襲、6は510
2゜SiO,′ri02.5j3N4 等からなる透明
誘電体膜、7はT i 、Mg、 13e 、希土類金
属等の材質からなる酸化容易性物質膜である。この実施
例(2)の4IW造では酸化容易性物質膜7は外気から
侵入するFii9素及び素子内部に存在する酸素を消費
しもって記憶膜5の酸化を抑制する機能と、支持基体4
側から人剤し記憶11急5を透過した光を反則し再び記
憶膜5に入η、jぜしめる為の反射膜としての機能とを
合わせ持つ、又透明誘電体膜6は断熱層として1ゑ能す
る。実施例(2)の構造では記憶膜5は必然的に薄膜化
が要求されるので記憶膜5がもし酸化された場合信号特
性劣化は著しい。従って実施例(2)の構造では特に酸
化容易性物質膜7の重要度が増す。Example (2) The second example (1) shows a side view of Example (2) of the optical storage element according to the present invention. 4 is a support base made of glass, synthetic resin, etc., 5 is an additional recordable memory 11 consisting of shrines 41 of 'I''e, T e lower oxides, organic dyes, etc., 6 is 510
2 is a transparent dielectric film made of SiO, 'ri02.5j3N4, etc., and 7 is an easily oxidizable substance film made of materials such as Ti, Mg, 13e, and rare earth metals. In the 4IW structure of this embodiment (2), the easily oxidizable material film 7 has the function of suppressing the oxidation of the memory film 5 by consuming the Fii9 element that enters from the outside air and the oxygen present inside the element, and the supporting base 4
The transparent dielectric film 6 also functions as a reflective film to reflect the light that has passed through the memory 11 sudden 5 and enters the memory film 5 again, and also serves as a heat insulating layer. I can do it. In the structure of Example (2), since the memory film 5 is necessarily required to be thin, if the memory film 5 is oxidized, the signal characteristics will deteriorate significantly. Therefore, in the structure of Example (2), the importance of the easily oxidizable material film 7 increases.
く効果〉
本発明によれは記憶膜の酸化が著しく抑制されるので光
記憶素子の信頼性が大きく向」ニするものである。Effects> According to the present invention, oxidation of the memory film is significantly suppressed, so the reliability of the optical memory element is greatly improved.
第1図は本発明に係る光記憶素子の実施例(1)の側面
図、第2図は本発明に係る光記憶素子の実施例(21の
側面図を示す。
図中、1,4:支持基体、2,5:記憶膜、3゜7、酸
化容易性物質11ウキ、6:透明誘電体膜。
代理人 弁理士 福 士 愛 彦(他2名)第1 図
第 2 口FIG. 1 is a side view of Example (1) of the optical memory element according to the present invention, and FIG. 2 is a side view of Example (21) of the optical memory element according to the present invention. In the figure, 1, 4: Supporting substrate, 2, 5: Memory film, 3゜7, easily oxidizable substance 11 times, 6: Transparent dielectric film. Agent: Patent attorney Yoshihiko Fukushi (and 2 others) Figure 1 Figure 2
Claims (1)
記録可能な記憶膜と、Ti 、Mg 、Be 、炭素。 希土類金属等の酸化容易性物質膜とが層状構造をなすこ
とを特徴とする光記憶素子。[Claims] 1. A substrate, a memory film capable of recording additional materials such as Te, lower Te oxides, organic dyes, etc., and Ti, Mg, Be, and carbon. An optical memory element characterized in that it has a layered structure with a film of an easily oxidizable substance such as a rare earth metal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57190335A JPS5979444A (en) | 1982-10-28 | 1982-10-28 | Optical memory element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57190335A JPS5979444A (en) | 1982-10-28 | 1982-10-28 | Optical memory element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5979444A true JPS5979444A (en) | 1984-05-08 |
Family
ID=16256474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57190335A Pending JPS5979444A (en) | 1982-10-28 | 1982-10-28 | Optical memory element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5979444A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2561023A1 (en) * | 1984-03-09 | 1985-09-13 | Canon Kk | OPTICAL RECORDING MEDIUM |
EP0208503A2 (en) * | 1985-07-04 | 1987-01-14 | Matsushita Electric Industrial Co., Ltd. | Signal recording disc |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54106149A (en) * | 1978-02-09 | 1979-08-20 | Tokyo Denka Kk | Optical information recording carrier |
JPS54118205A (en) * | 1978-03-06 | 1979-09-13 | Mitsubishi Electric Corp | Infomration recording disc |
JPS58175154A (en) * | 1982-04-08 | 1983-10-14 | Matsushita Electric Ind Co Ltd | Optical recording and reproducing disc |
-
1982
- 1982-10-28 JP JP57190335A patent/JPS5979444A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54106149A (en) * | 1978-02-09 | 1979-08-20 | Tokyo Denka Kk | Optical information recording carrier |
JPS54118205A (en) * | 1978-03-06 | 1979-09-13 | Mitsubishi Electric Corp | Infomration recording disc |
JPS58175154A (en) * | 1982-04-08 | 1983-10-14 | Matsushita Electric Ind Co Ltd | Optical recording and reproducing disc |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2561023A1 (en) * | 1984-03-09 | 1985-09-13 | Canon Kk | OPTICAL RECORDING MEDIUM |
EP0208503A2 (en) * | 1985-07-04 | 1987-01-14 | Matsushita Electric Industrial Co., Ltd. | Signal recording disc |
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