JPS597782B2 - Vapor deposition equipment - Google Patents
Vapor deposition equipmentInfo
- Publication number
- JPS597782B2 JPS597782B2 JP774177A JP774177A JPS597782B2 JP S597782 B2 JPS597782 B2 JP S597782B2 JP 774177 A JP774177 A JP 774177A JP 774177 A JP774177 A JP 774177A JP S597782 B2 JPS597782 B2 JP S597782B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- vapor deposition
- shutter
- electron beam
- deposition equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Silicon Compounds (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は、シリコンを蒸着するのに好適な電子線蒸着装
置のような蒸着装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in vapor deposition apparatus, such as electron beam vapor deposition apparatus, suitable for vapor depositing silicon.
従来、シリコン蒸発源を電子線照射により加熱させるよ
うにした電子線蒸着装置が実用に供されている。この種
の装置においては、シリコン蒸発源の上方に設けたシャ
ッタの下面にシリコンが付着し、これが熱的ストレスや
振動のため容易に剥離してシリコン蒸発源中に混入した
時に急激な加熱を受け突沸現象をひきおこす。このよう
な突沸によりとばされたシリコンは被蒸着面に突起状に
付着するので蒸着工程における不良の発生又は歩留クの
低下の大きな原因になつている。本発明の目的は、突沸
現象の発生を効果的に抑制した新規な蒸着装置を提供す
ることにある。Conventionally, an electron beam evaporation apparatus in which a silicon evaporation source is heated by electron beam irradiation has been put into practical use. In this type of device, silicon adheres to the bottom surface of the shutter installed above the silicon evaporation source, and when it is easily peeled off due to thermal stress and vibration and mixed into the silicon evaporation source, it is subjected to rapid heating. Causes bumping phenomenon. The silicon blown off by such bumping adheres to the surface to be deposited in the form of protrusions, which is a major cause of defects in the deposition process or a decrease in yield. An object of the present invention is to provide a novel vapor deposition apparatus that effectively suppresses the occurrence of bumping phenomena.
本発明の特徴の１つは、シャッタの下面にアルミニウム
層を被着させておくことにより蒸着シリコンの付着力を
補強した点にある。この特徴によると、突沸の原因とな
るシリコンのはがれや落下をおさえ、蒸着工程における
歩留りを向上させることができる。次に、添付図面に示
す実施例について本発明を説明する。One of the features of the present invention is that the adhesion of the deposited silicon is reinforced by depositing an aluminum layer on the bottom surface of the shutter. According to this feature, it is possible to suppress peeling and falling of silicon, which causes bumping, and improve the yield in the vapor deposition process. The invention will now be described with reference to embodiments shown in the accompanying drawings.
図は、本発明の一実施例によるシリコン蒸着用電子線蒸
着装置の蒸着室内の配置を示すものである。図において
、１０は、銅などからなるハース（るつぼ）であり、そ
の上面の凹所にはシリコン（Ｓｉ）インゴット１２が配
置されている。ハース１０の側面には、電子銃などから
なる電子線発生器１４が配置され、そこから発生される
電子線１６は磁界により図示の如く偏向されてＳｉイン
ゴット１２に照射される。Ｓｉインゴット１２から矢印
２８に示すように蒸発されるシリコンのさらに上方への
通過を制御するためステンレス製のシャッタ１８が回動
アーム１７に固定具２２により装着されている。The figure shows the arrangement within a deposition chamber of an electron beam evaporation apparatus for silicon deposition according to an embodiment of the present invention. In the figure, 10 is a hearth (crucible) made of copper or the like, and a silicon (Si) ingot 12 is placed in a recess on its upper surface. An electron beam generator 14 consisting of an electron gun or the like is disposed on the side surface of the hearth 10, and an electron beam 16 generated therefrom is deflected by a magnetic field as shown in the figure and irradiated onto the Si ingot 12. A stainless steel shutter 18 is attached to the rotating arm 17 by a fixture 22 in order to control the upward passage of the evaporated silicon from the Si ingot 12 as shown by an arrow 28 .
シャッタ２８の下面には本発明の教示にしたがつてアル
ミニウム層２０が一例として約１０Ｉｔｍの厚さに被着
されている。シャッタ１８のさらに上方には蒸着処理を
受ける半導体ウエ・・２６を保持するウェハホルダ２４
が配置されている。上記のような構成になる蒸着装置に
おいては、Ｓｉインゴット１２を電子線照射により加熱
して矢印２８に示すようにシリコンを蒸発させることが
できる。An aluminum layer 20 is deposited on the underside of the shutter 28 in accordance with the teachings of the present invention to a thickness of approximately 10 Itm, by way of example. Further above the shutter 18 is a wafer holder 24 that holds a semiconductor wafer 26 to be subjected to vapor deposition processing.
is located. In the vapor deposition apparatus configured as described above, silicon can be evaporated as shown by the arrow 28 by heating the Si ingot 12 by electron beam irradiation.
初期の蒸発シリコンはシャッタ１８によりウェハ２６に
到達するのを阻止される。このとき、蒸発シリコン２８
はシャッタ１８の下面に堆積層３０として付着する。シ
リコン堆積層３０はシャッタ１８の若干の振動や蒸発源
からの熱放射による熱的応力に対して容易にはがれおち
ることがない。アルミニウム層２０はステンレス製のシ
ャッタ１８との接着性が良好であるとともにシリコン堆
積層３０とのそれも良好であり、さらにシリコンとステ
ンレスとの熱膨脹係数差による熱的応力に対する緩衝材
として作用するからである。不純物の混入が予期される
初期の蒸発シリコンを上記のようにしてシヤツタ１８で
阻止した後で、シヤツタ１８を回動して蒸発シリコン２
８をウエ・・２６の表面に付着させる。上記した本発明
による蒸着装置は、突沸現象を軽減しうるものであるか
ら、高歩留Ｄな蒸着処理を実施する上で極めて有用であ
る。Initial evaporated silicon is prevented from reaching wafer 26 by shutter 18 . At this time, evaporated silicon 28
is deposited as a deposited layer 30 on the lower surface of the shutter 18. The silicon deposit layer 30 does not easily peel off due to slight vibrations of the shutter 18 or thermal stress due to heat radiation from the evaporation source. The aluminum layer 20 has good adhesion to the stainless steel shutter 18 and also good adhesion to the silicon deposited layer 30, and also acts as a buffer against thermal stress due to the difference in thermal expansion coefficient between silicon and stainless steel. It is. After the initial evaporated silicon, which is expected to contain impurities, is blocked by the shutter 18 as described above, the shutter 18 is rotated to remove the evaporated silicon 2.
8 is attached to the surface of the wafer 26. The above-described vapor deposition apparatus according to the present invention can reduce the bumping phenomenon, and is therefore extremely useful in carrying out high-yield vapor deposition processing.
図は、本発明の一実施例による電子線蒸着装置の内部配
置を示す概略断面図である。
符号の説明 １０・・・・・・一・−ス、１２・・・・
・・シリコンインゴツト、１４・・・・・・電子線発生
器、１６・・・・・・電子線、１７・・・・・・回転ア
ーム、１８・・・・・・シヤツタ、２０・・・・・・ア
ルミニウム層、２２・・・・・・固定具、２４・・・・
・・ウエハホルダ、２６・・・・・・ウエハ。The figure is a schematic cross-sectional view showing the internal arrangement of an electron beam evaporation apparatus according to an embodiment of the present invention. Explanation of symbols 10...1...s, 12...
...Silicon ingot, 14...Electron beam generator, 16...Electron beam, 17...Rotating arm, 18...Shutter, 20... ... Aluminum layer, 22 ... Fixture, 24 ...
...Wafer holder, 26...Wafer.
Claims (1)
を配置して成る蒸着装置において、前記シャッタの少な
くとも前記シリコン蒸発源に対向する方の面にアルミニ
ウム層を被着したことを特徴とする蒸着装置。1. A vapor deposition apparatus comprising a shutter disposed above a silicon evaporation source in a vapor deposition chamber, characterized in that an aluminum layer is deposited on at least the surface of the shutter facing the silicon evaporation source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP774177A JPS597782B2 (en) | 1977-01-28 | 1977-01-28 | Vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP774177A JPS597782B2 (en) | 1977-01-28 | 1977-01-28 | Vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5393135A JPS5393135A (en) | 1978-08-15 |
| JPS597782B2 true JPS597782B2 (en) | 1984-02-21 |
Family
ID=11674118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP774177A Expired JPS597782B2 (en) | 1977-01-28 | 1977-01-28 | Vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS597782B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5746634A (en) * | 1996-04-03 | 1998-05-05 | The Regents Of The University Of California | Process system and method for fabricating submicron field emission cathodes |
-
1977
- 1977-01-28 JP JP774177A patent/JPS597782B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5393135A (en) | 1978-08-15 |
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