JPS5975681A - Method for electrode formation of solar battery - Google Patents
Method for electrode formation of solar batteryInfo
- Publication number
- JPS5975681A JPS5975681A JP57186424A JP18642482A JPS5975681A JP S5975681 A JPS5975681 A JP S5975681A JP 57186424 A JP57186424 A JP 57186424A JP 18642482 A JP18642482 A JP 18642482A JP S5975681 A JPS5975681 A JP S5975681A
- Authority
- JP
- Japan
- Prior art keywords
- paste
- type layer
- electrode
- powder
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000015572 biosynthetic process Effects 0.000 title claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 4
- 239000000956 alloy Substances 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 6
- 229910052709 silver Inorganic materials 0.000 abstract description 6
- 239000000843 powder Substances 0.000 abstract description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052796 boron Inorganic materials 0.000 abstract description 3
- 238000007650 screen-printing Methods 0.000 abstract description 3
- 239000012298 atmosphere Substances 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000003960 organic solvent Substances 0.000 abstract description 2
- 239000002075 main ingredient Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 10
- 238000007747 plating Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、太陽電池の電極形成法に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a method for forming electrodes for solar cells.
従来例の構成とその問題点
従来、太陽電池の電極形成法としては、真空蒸着法、メ
ッキ法、印刷法が用いられてきた。Conventional Structures and Problems Conventionally, vacuum evaporation, plating, and printing methods have been used to form solar cell electrodes.
真空蒸着法においては、高度な熟練した技術を必要とす
る。また、真空系を用い、バッチ処理であるだめ生産性
が悪く、装置コストが高い。これらの欠点を有するだめ
低コスト化の方法として、メッキ法、印刷法が主に利用
されるようになってきた・
メッキ法においては、バッチシステムであるが真空系で
ないだめ生産性がよく、材料及び装置コストが安い等の
利点がある。しかし、メッキは化学反応であるため、メ
ッキ浴の経時変化、被メッキ体の表面状態の違いにより
、メッキの析出状態に差があり、生産管理がしにくい欠
点がある。印刷法は連続プロセスで生産性がよい。しか
し、使用材料がＡｇ又はＡｕであるため、材料コストが
高くなり、より一層の低コスト化には難しいものがある
。Vacuum deposition requires highly skilled techniques. In addition, since a vacuum system is used and batch processing is required, productivity is poor and equipment costs are high. Despite these drawbacks, plating and printing methods have come to be mainly used as cost-reducing methods. Although plating is a batch system, it is not a vacuum system, so productivity is high and material It also has advantages such as low equipment cost. However, since plating is a chemical reaction, there are differences in the state of plating deposition due to changes in the plating bath over time and differences in the surface state of the object to be plated, making production control difficult. The printing method is a continuous process and has good productivity. However, since the material used is Ag or Au, the material cost is high, and it is difficult to further reduce the cost.
発明の目的
本発明は、印刷法によって、Ａｇ、Ａｕを用いたものと
同等の性能を有し、しかも安価な電極を形成する方法を
提供することを目的とする。OBJECTS OF THE INVENTION An object of the present invention is to provide a method of forming an electrode using a printing method, which has performance equivalent to that using Ag or Au, and is inexpensive.
発明の構成
本発明は、Ａｕ 、 Ａｇに代わるべき金属として、Ｎ
ｉ を導電材料の主成分としたペーストを用い、これを
Ｐ−Ｎ接合を形成したシリコン太陽電池基板の電極形成
部にスクリーン印刷等の方法で塗布し、乾燥後焼成して
、ペースト中のニッケルと基板のシリコンによるニッケ
ルーシリコン合金を形成し、良好なオーミックコンタク
トの電極を得るものである。Structure of the Invention The present invention uses N as a metal to replace Au and Ag.
Using a paste containing i as the main component of the conductive material, this is applied to the electrode forming part of a silicon solar cell substrate on which a P-N junction is formed by a method such as screen printing, dried and fired, and the nickel in the paste is removed. A nickel-silicon alloy is formed with the silicon of the substrate and an electrode with good ohmic contact is obtained.
本発明によれば、高価なＡｕ 、 Ａｇを主に使用した
電極に比べても、はぼ同等のオーミックコンタクトを持
ち十分低抵抗で、かつ安価な電極を形成することができ
る。According to the present invention, it is possible to form an electrode that has substantially the same ohmic contact, has sufficiently low resistance, and is inexpensive, even when compared to electrodes mainly using expensive Au or Ag.
なお、Ｎ層側に塗布するペーストにボロン、Ｐ層側のペ
ーストにリンをそれぞれ混入させると、良好なオーミッ
クコンタクトを得るのに好都合である。Note that it is convenient to mix boron into the paste applied to the N-layer side and phosphorus into the paste applied to the P-layer side to obtain good ohmic contact.
実施例の説明
第１〜３図は本発明の一実施例による電極形成工程を示
す。DESCRIPTION OF THE EMBODIMENTS FIGS. 1 to 3 show a process for forming an electrode according to an embodiment of the present invention.
まず、Ｈ型シリコン基板１にボロン等の３価の不純物を
拡散させ、Ｐ型層２を形成する。First, a trivalent impurity such as boron is diffused into an H-type silicon substrate 1 to form a P-type layer 2.
次にＮ型層１．Ｐ型層２のそれぞれの表面に、スクリー
ン印刷等の方法を用いてペースト層３゜４を塗布する。Next, N-type layer 1. A paste layer 3.4 is applied to each surface of the P-type layer 2 using a method such as screen printing.
なお、ここに用いたペーストは、ニッケル粉、ガラスフ
リット粉及びこれらを分散させる有機溶媒が主成分であ
る。The main components of the paste used here are nickel powder, glass frit powder, and an organic solvent for dispersing these powders.
次に、ペースト層３，４を８０′Ｃ〜１６０℃で２０分
間乾燥しｋのち、還元性ガス雰囲気中において４００〜
８０ｏ０Ｃで３０分熱処理を行う。この熱処理により、
ペースト中のニッケルと基板のシリコンとの合金層が出
来上がり、良好なオーミック性電極３’ 、 ４’が形
成される。なお、この乾燥、焼成においては、フラッシ
ュファイアリング等の方法で行えば、電極形成時間は短
縮される。Next, paste layers 3 and 4 are dried at 80'C to 160C for 20 minutes, and then dried at 400 to 160C in a reducing gas atmosphere.
Heat treatment is performed at 80o0C for 30 minutes. With this heat treatment,
An alloy layer of the nickel in the paste and the silicon of the substrate is completed, and good ohmic electrodes 3' and 4' are formed. Note that the electrode forming time can be shortened by performing the drying and baking by a method such as flash firing.
発明の効果
以上のように本発明によれば、Ａｕ 、 Ａｇ０代わり
にＮｉを主成分とする導電性ペーストを用いたことによ
り、より安価な電極が形成できることになシ、大幅なコ
ストダウンができる。また、従来のＡｕ 、 Ａｇを用
いた電極とほぼ同等の性能を持った電極が形成でき、電
極とリード線との半田接着強度においては、ばらつきが
少なく、また接着強度も大きく、十分実用に耐えるもの
が得られる。Effects of the Invention As described above, according to the present invention, by using a conductive paste mainly composed of Ni instead of Au or Ag0, a cheaper electrode can be formed, and the cost can be significantly reduced. . In addition, it is possible to form an electrode with almost the same performance as conventional electrodes using Au and Ag, and there is little variation in the solder bond strength between the electrode and the lead wire, and the bond strength is high, so it is sufficient for practical use. You can get something.
第１図〜第３図は本発明の実施例による電極形成工程を
示す。
１・・・・・・Ｎ型層、２・・・・・・Ｐ型層、３，４
・旧・・ペースト塗布層、３’、４’・・・・・・電極
。
代理人の氏名 弁理士 中 尾 敏 男 はが１名第１
図FIGS. 1 to 3 show an electrode forming process according to an embodiment of the present invention. 1...N-type layer, 2...P-type layer, 3, 4
・Old... Paste coating layer, 3', 4'... Electrode. Name of agent: Patent attorney Toshio Nakao (1st person)
figure
Claims (1)
電極形成部に、ニッケルを主成分とした導電性ペースト
を所望パターンに塗布する工程と、前記塗布物を加熱し
乾燥させる工程、および高温に保持してＮｉ−８ｉ合金
を作る工程とを有する太陽電池の電極形成法。 （２）前記導電性ペーストがリン又はボロンを含有する
特許請求の範囲第１項記載の太陽電池の電極形成法。[Claims] (A step of applying a conductive paste containing nickel as a main component in a desired pattern to an electrode formation portion on a silicon solar cell substrate on which a 11P-N junction is formed, and heating and drying the applied material. A method for forming an electrode for a solar cell, the method comprising: a step of forming a Ni-8i alloy by holding at a high temperature; and a step of forming a Ni-8i alloy by maintaining the conductive paste at a high temperature. Battery electrode formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57186424A JPS5975681A (en) | 1982-10-22 | 1982-10-22 | Method for electrode formation of solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57186424A JPS5975681A (en) | 1982-10-22 | 1982-10-22 | Method for electrode formation of solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5975681A true JPS5975681A (en) | 1984-04-28 |
Family
ID=16188178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57186424A Pending JPS5975681A (en) | 1982-10-22 | 1982-10-22 | Method for electrode formation of solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5975681A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976688A (en) * | 2006-02-02 | 2011-02-16 | E.I.内穆尔杜邦公司 | Solar cell light-receiving surface electrode and manufacturing method thereof |
| JP2015506101A (en) * | 2011-12-09 | 2015-02-26 | ハンワ ケミカル コーポレイション | Solar cell and manufacturing method thereof |
-
1982
- 1982-10-22 JP JP57186424A patent/JPS5975681A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976688A (en) * | 2006-02-02 | 2011-02-16 | E.I.内穆尔杜邦公司 | Solar cell light-receiving surface electrode and manufacturing method thereof |
| JP2015506101A (en) * | 2011-12-09 | 2015-02-26 | ハンワ ケミカル コーポレイション | Solar cell and manufacturing method thereof |
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