JPS5975677A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JPS5975677A JPS5975677A JP57186077A JP18607782A JPS5975677A JP S5975677 A JPS5975677 A JP S5975677A JP 57186077 A JP57186077 A JP 57186077A JP 18607782 A JP18607782 A JP 18607782A JP S5975677 A JPS5975677 A JP S5975677A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- irradiation
- junction depth
- solar battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 2
- 230000002285 radioactive effect Effects 0.000 abstract 2
- 230000005855 radiation Effects 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
【発明の詳細な説明】
本発明は、ヘテｐフェイス構造ＧａＡａ太陽亀池に関し
、特に各層半導体の伝導形および接合深さの最適化を図
ることにより耐放射線特性および光電変換効率を高めた
太陽電池に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a hetep-face structure GaAa solar cell, and more particularly to a solar cell with improved radiation resistance and photoelectric conversion efficiency by optimizing the conduction type and junction depth of each semiconductor layer. It is something.
従来、宇宙用太陽電池としては、Ｓｔ太陽電池が使用さ
れて来た。しかし、宇宙環境においては、各種放射線が
存在し、半導体内に格子欠陥が生成される結果、太陽電
池の出力低下を招くことになる。従来使用されて来たＳ
ｌ太陽電池では、基板層の伝導形および抵抗率の最適化
、更には放射線防霞用のカバーガラスの使用等の対策を
講することにより、放射線劣化の低減を図って来たが、
宇宙環境における太陽電池の寿命はｊ年程度であった。Conventionally, St solar cells have been used as space solar cells. However, in the space environment, various types of radiation exist, and lattice defects are generated in semiconductors, resulting in a decrease in the output of solar cells. Traditionally used S
In solar cells, efforts have been made to reduce radiation deterioration by optimizing the conductivity type and resistivity of the substrate layer, and by taking measures such as using cover glasses to protect against radiation haze.
The lifespan of solar cells in the space environment was about j years.
第１図は、従来のＳｌｎ＋ｐ接合形太接合性太陽電池ｓ
Ｖ電子線照射による光電変換効率の相対変化の一例を示
す。宇宙における放射線環境の下で太陽電池を使用する
場合に考慮すべき粒子線としては、／ 〜２ ＭｅＶ
ｉ’ｌ子線、ｊ −Ｘ） ＭｅＶ陽子線および３０〜７
０ＭｅＶα線等がある。特に粒子線束の大きい１ＭｅＶ
電子線について、／θ年間に換算すると、太陽電池はＪ
Ｘ １０１４ｃｔｎ−２程度の被曝を受けることにな
る。すなわち、Ｓｌ太陽電池を宇宙環境で／θ年程度使
用すると、効率が半分以下に低下することになり、従来
のＳｔ太陽電池は放射線に弱い欠点があった。Figure 1 shows a conventional Sln+p junction type thick junction solar cell.
An example of relative change in photoelectric conversion efficiency due to V electron beam irradiation is shown. Particle beams that should be considered when using solar cells in the radiation environment in space include / ~ 2 MeV
i'l proton beam, j −X) MeV proton beam and 30-7
There are 0MeVα rays, etc. 1MeV, which has a particularly large particle beam flux
Regarding the electron beam, when converted to /θ per year, the solar cell is J
They will be exposed to approximately 1014 ctn-2 of radiation. That is, if an Sl solar cell is used in a space environment for about /θ years, its efficiency will drop to less than half, and conventional St solar cells have the disadvantage of being susceptible to radiation.
本発明は、これらの欠点を除失するためになされたもの
で、その目的は、ヘテロフェイス描造ＧａＡｓ太［湯屯
池において、各層半導体の伝導形および接合深さの最適
化を図ることにより、耐放射線特性に優れた高効率の太
陽電池を提供することにある。The present invention was made to eliminate these drawbacks, and its purpose is to optimize the conduction type and junction depth of each layer of semiconductor in a heteroface-drawn GaAs thick layer. The purpose of the present invention is to provide a highly efficient solar cell with excellent radiation resistance.
以下に、図面を参照して本発明の詳細な説明する。なお
、以下に示す実施例は単なる例示に過ぎず、本発明の枠
の中で種々の改良や変形があり得ることは勿論である。The present invention will be described in detail below with reference to the drawings. Note that the embodiments shown below are merely illustrative, and it goes without saying that various improvements and modifications can be made within the framework of the present invention.
まず、第２図に、本発明の根幹をなずＧ ａＡ ｓ、ｌ
結晶の少数キャリア拡散長の／ ＭｅＶ電子線照射効果
を示す。この実験結果において１．形ＧａＡｓ単結晶の
方がｎ形単結晶よりも放射線照射による少数キャリア拡
散長の低下が少ないことが見い出された。First, FIG. 2 shows that the basis of the present invention is GaA s, l
The effect of /MeV electron beam irradiation on the minority carrier diffusion length of a crystal is shown. In this experimental result, 1. It has been found that the decrease in the minority carrier diffusion length due to radiation irradiation is smaller in the GaAs single crystal than in the n-type single crystal.
すなわち、本発明は、放射線照射に伴なうＧａＡｅｔｌ
結晶中の少数キャリア拡散長の低下の度合が単結晶の伝
導形に依存することを確認し、ががる現象を利用してな
したものであり、この現象を利用すれは、放射線に強い
ＧａＡＦ３太陽電池を構成できることがわかる。That is, the present invention is directed to the treatment of GaAetl caused by radiation irradiation.
This was done by confirming that the degree of decrease in the minority carrier diffusion length in a crystal depends on the conductivity type of the single crystal, and by utilizing the lag phenomenon. It can be seen that a solar cell can be constructed.
しかして、本発明では、耐放射線特性に優れたヘテロフ
ェイスＧａＡｄ 陽ＭＬ池を提供するべく、各層半導体
の伝導形のも・Ｙ成および接合深さを以下に示すように
最適化する。Therefore, in the present invention, in order to provide a heteroface GaAd positive ML cell with excellent radiation resistance characteristics, the conduction type of each layer semiconductor and the junction depth are optimized as shown below.
第３図は、本発明によるヘテロフェイスＧａＡｓ太＠亀
池の構成の一例を示す。ここで／はｐ形ＧａＡｓ単結晶
基板であり、この基板ｌ上にｎ形ＧａＡＪ ２をエピタ
キシャル成長させる。更に、このｎ形ＧａＡｓ単結晶に
混晶半導体Ｇａｔ−，ｚＡ１ｇＡｓの組成ｘ −０，７
〜０＝９１から成るｎ形層３を窓層としてエピタキシャ
ル成長させる。このｎ形層３上にＡ１等による櫛形状の
収集電極ｌを配置し、更に、ｎ形層３には収集電極ｌを
覆って５１０２等から成る反射防止膜！を被着する。６
は基板／のエピタキシャル層−とは反対側に配置した裏
面電極である。太陽光は反射防止膜Ｓの側から入射する
。FIG. 3 shows an example of the structure of a heteroface GaAs thick @Kameike according to the present invention. Here / is a p-type GaAs single crystal substrate, and n-type GaAJ 2 is epitaxially grown on this substrate l. Furthermore, this n-type GaAs single crystal has a composition x -0,7 of a mixed crystal semiconductor Gat-,zA1gAs.
The n-type layer 3 consisting of ~0=91 is epitaxially grown as a window layer. A comb-shaped collector electrode l made of A1 or the like is arranged on this n-type layer 3, and furthermore, an antireflection film made of 5102 or the like is placed on the n-type layer 3 to cover the collector electrode l! be coated with. 6
is a back electrode placed on the opposite side of the epitaxial layer of the substrate. Sunlight enters from the antireflection film S side.
第１図は本発明太１１ｍ池の他の構成例を示し、ここで
は、ｐ形ＧａＡｓ単結晶基板／の上にｐ形ＧａＡｓエピ
タキシャル層７をエピタキシャル成長させ、そのＮＪ７
の上にｎ形ａａＡ ｓ層λをエピタキシャル成長させる
。本例におけるその他の構成は第３図の例と同様であり
、省略する。FIG. 1 shows another example of the structure of the 11-meter thick pond of the present invention. Here, a p-type GaAs epitaxial layer 7 is epitaxially grown on a p-type GaAs single crystal substrate,
An n-type aaAs layer λ is epitaxially grown thereon. The other configurations in this example are the same as those in the example shown in FIG. 3, and will therefore be omitted.
これら本発明の実施例においては、ｎ形ＧａＡｓ層λの
厚み〔接合深さｘｊ）はｏ、ｏｒ〜３゜！μｍｌ〕範囲
のものを検削した。なお、ｎ形Ｇａ１−よＡｌよＡｓＪ
ｌｌ Ｊの厚み（窓層厚ｄ）は００ＯＳ〜０゜λ１ｌｒ
ｒｖＤ範囲とした。また、ｎ形Ｇａ １−ｘＡｌｘＡｓ
Ｊ裔Ｊおよびｎ形ＧａＡｅ層λのキャリア濃度はよ×／
θ儒 、ｐ形ＧａＡｓ単結晶およびｐ形Ｇａ Ａ ｓ層
７のギヤリア濃度は／〜！×／θα 程度とした。In these embodiments of the present invention, the thickness of the n-type GaAs layer λ (junction depth xj) is o, or~3°! [μml] range was inspected. In addition, n-type Ga1- yo Al yo AsJ
ll The thickness of J (window layer thickness d) is 00OS~0°λ1lr
rvD range. Also, n-type Ga 1-xAlxAs
The carrier concentration of J and n-type GaAe layer λ is x/
θ, the gearia concentration of the p-type GaAs single crystal and the p-type GaAs layer 7 is /~! It was set to about ×/θα.
ｎ形Ｇａ １− 、ｌＩ、ｋｌ’、Ａｓ層Ｊ （ｆｆｉ
−０，７〜０．９１）のバンド・ギャップは約コｊｅ
Ｖであり、波長０．５μｍ以上の光を吸収しないため、
太陽光スペクトルのほとんどに対して透明である。した
がって、かがる窓層３の厚さを大きくとることができ、
直列抵抗損失を低減できる。また、太ＩＩ ！池の表ｍ
ｊ再結合損失も、バンド・ギャップがＧａＡｓに比べて
より広く、表面付近で生成されるキャリアが少ないため
、抑制することができる。以上の理由により、ｎ形”＋
−ｘＡ１．２，１８層３の導入によって太陽電池の効率
がより向上する。また、放射線により表面刊近に生じた
欠ｌＸ１６の影響か減り、耐放射線性も向上する。n-type Ga 1-, lI, kl', As layer J (ffi
-0.7 to 0.91) band gap is approximately coje
V and does not absorb light with a wavelength of 0.5 μm or more,
Transparent to most of the sunlight spectrum. Therefore, the thickness of the overcast window layer 3 can be increased,
Series resistance loss can be reduced. Also, Tai II! Pond table m
j recombination loss can also be suppressed because the band gap is wider than that of GaAs and fewer carriers are generated near the surface. For the above reasons, n-type"+
-xA1.2,18 By introducing the layer 3, the efficiency of the solar cell is further improved. In addition, the influence of defects caused by radiation near the surface is reduced, and radiation resistance is improved.
第５図は、本発明に係るヘテロフェイスＧａＡｓ太陽電
池の光電変換効率ηの接合深さｒｊ依存性を１Ｍ５ＶＴ
４子線照射？ｒ（φをパラメータとして検討したもので
ある。−子線照射な受けない場合には、本発明に係るヘ
テロフ１イス太陽電池は、接合深さｘｊがＯＪ〜／、０
μｍの範囲で最適である。しかし、／ Ｍ＠Ｖ電子線照
射の照射ｆｋφの増加と共に、光電変換効率は低下し、
効率面で最適な接合探さは浅くなることがわかる。宇宙
環境の下で使用する場合に考慮すべき粒子線の中で主と
なる／ ＭｅＶ電子線について、太陽電池が／θ年間照
射された場合の等測的な照射Ｊｉｔφは３×／θ１４鋼
−２程度である。第５図から明らかなように、φ＝３×
／θ”ｆｉ−２堤度の１１（１躬を受けた場合の、接合
深さ、ＪのＪｌよ適値はＯ＠、２μｍ程度となるが、放
射線照射を受けない場合（φ−Ｏ）およびφ−３Ｘ／θ
”ｍ””程度の照射を受けた場合の接合深さの最適値は
、それぞれ１．０μｍ、およびＯ０ｌμ罰あり、放射線
の照射ｆ１の程度に応じて、ｎ形層 ａＡｓｊ’＞ｉコ
の厚さ、すなわち接合深さｘｊｆＯ０／〜／。θμ中度
とすることによって高効率でなおかつ耐放射線特性を有
する太陽電池を実現できる。FIG. 5 shows the dependence of the photoelectric conversion efficiency η on the junction depth rj of the heteroface GaAs solar cell according to the present invention at 1M5VT.
4-beam irradiation? This study was conducted using r(φ as a parameter.) - When not subjected to coronal beam irradiation, the heterophilic one-chair solar cell according to the present invention has a junction depth xj of OJ~/, 0
It is optimal in the μm range. However, as the irradiation fkφ of /M@V electron beam irradiation increases, the photoelectric conversion efficiency decreases,
It can be seen that the optimal junction search in terms of efficiency is shallow. Regarding the /MeV electron beam, which is the main particle beam to be considered when used in the space environment, the isometric irradiation Jitφ when a solar cell is irradiated for /θ year is 3 × /θ14 steel - It is about 2. As is clear from Fig. 5, φ=3×
/θ"fi-2 When receiving 11 (1 yen), the appropriate value for Jl of J is O@, about 2 μm, but when not receiving radiation (φ-O) and φ-3X/θ
The optimal value of the junction depth when irradiated with radiation of about "m" is 1.0 μm and O0lμ, respectively, and depending on the degree of radiation irradiation f1, the thickness of the n-type layer aAsj'>i That is, the junction depth xjfO0/~/.By setting θμ to a moderate value, a solar cell with high efficiency and radiation resistance can be realized.
第を図は、本発明に係る窓層３の厚さがＯ６０！μｍｐ
接合深さｘｊが０．２μｍのへテロフェイスＧａＡｓ
太陽電池および従来のＳｉｎ −ｐ接合形太＠電池につ
いて、／ ＭｅＶ 宙、子線照射による効率の相対変化
を比較して示す。沁を図かられかるように、本発明に係
るヘテロフェイスＧａＡｓ太陽電池は、従来のＳｉｎ”
ｐ接合太陽′電池よりも耐放射線特性に優れ°Ｃいる。In the figure, the thickness of the window layer 3 according to the present invention is O60! μmp
Heteroface GaAs with junction depth xj of 0.2 μm
A comparison of relative changes in efficiency due to /MeV space and cosonant beam irradiation is shown for a solar cell and a conventional Sin-p junction thick @ cell. As can be seen from the drawing, the heteroface GaAs solar cell according to the present invention
It has better radiation resistance than p-junction solar cells.
１１１ｊ用年故を効率が照射前の７Ｊ％以上を維持ツる
期１ｉｉどずれは、ヘテロフェイスＧａＡｓ太陽？ｌＬ
池を、宇宙環境におい′Ｃ用いた場合には、耐用年数と
し“Ｃ７０年以上を期待できることがわかる。Will the heteroface GaAs solar be able to maintain its efficiency of 7J% or more before irradiation during the aging of 111j? lL
It can be seen that if a pond is used in a space environment, it can be expected to have a useful life of more than 70 years.
本発明においては、各層半導体の伝導形の宿戒および接
合深さｘｊを最適化することにより、高効率で７Ｊ」５
かつ耐放射線特性に優れた太陽電池を実現できる。窓層
３の厚さｄについては、Ｏ，Ｏｊ〜０゜コ／ｊｍの範囲
では、光電変換効率の接合深さ依存性への影！Ｑノは少
なく、窓層厚ｄが薄い方が光電変換効率が高くなる傾向
は見られたものの、上記の範囲に選べは良いと言える。In the present invention, by optimizing the conduction type of each semiconductor layer and the junction depth xj, it is possible to achieve 7J''5 with high efficiency.
In addition, a solar cell with excellent radiation resistance can be realized. Regarding the thickness d of the window layer 3, in the range of O, Oj to 0°/jm, there is no effect on the junction depth dependence of photoelectric conversion efficiency! Although there was a tendency for the photoelectric conversion efficiency to be higher when Q was smaller and the window layer thickness d was thinner, it can be said that the above range is a good choice.
さらに加えて、各層のキャリア濃度をより低くするか、
各層の結晶性を向上させることにより各層内における少
数キャリア拡散長をより長くすれは、さらに効率および
耐放射線損傷の両面でより改善を期待することができる
。In addition, the carrier concentration in each layer may be lowered, or
If the minority carrier diffusion length within each layer is made longer by improving the crystallinity of each layer, further improvements can be expected in both efficiency and radiation damage resistance.
以上説明したように、本発明によれば、各層坐導体の伝
導形の構成および接合深さの最適化が図られているので
、従来の太陽電池に比べて、光電変換効率が高く、シか
も耐放射線特性に優れているなどの利点を有する太陽′
電池を得ることができる。As explained above, according to the present invention, the conduction type structure and junction depth of each layer of seated conductors are optimized, so the photoelectric conversion efficiency is higher than that of conventional solar cells, and the The sun has advantages such as excellent radiation resistance.
You can get batteries.
第１図は従来の５ｉｎｐ接合太陽電池の放射線劣化の一
例を示す特性曲線図、第、２図は本発明の根幹をなすＧ
ａＡｓ単結晶の放射線照射効果に及ぼす伝導形の影響を
示す図、第３図および第１Ｉ図は本発明によるヘテロフ
ェイスＧａＡｓ太陽電池の構造の２例を示す断面図、第
Ｓ図は本発明に係る太陽′電池の／Ｍ、Ｖ電子線照射前
後における光電変換効率の接合深さ依存性を示す図、第
６図は本発明に係る太］（１問電池および従来の８１太
陽電池について、／ＭｅＶ電子線照射による出力の相対
変化を比較して示す図である。
ｌ・・・ｐ形ＧａＡｓ単結晶基板・
Ｊ・・・ｎ形ＧａＡｓエピタキシャル層、３・・・ｎ形
Ｇａ１−エＡｌよＡｓエピタキシャル（２１１、ｔ・・
・収集電極、
ｊ・・・反射防止膜、
６・・・裏面電極、
７・・・ｐ形ＧａＡｓエピタキシャル層。
Ｑ”Ｊ’ ！ｉγ出願人ＩＪ本電信？■を話公社契 茗
羽 な
第２図
１ ＭｅＶ電子ａ？Ｘ射量 （Ｃｍ−２）第３図
第４図
乙
暦 茗 羽 役Fig. 1 is a characteristic curve diagram showing an example of radiation deterioration of a conventional 5 inp junction solar cell, and Figs.
Figures 3 and 1I are cross-sectional views showing two examples of the structure of a heteroface GaAs solar cell according to the present invention, and Figure S is a diagram showing the influence of conductivity type on the radiation irradiation effect of an aAs single crystal. Figure 6 shows the junction depth dependence of the photoelectric conversion efficiency before and after irradiation with /M and V electron beams of such a solar cell. It is a diagram showing a comparison of relative changes in output due to MeV electron beam irradiation. l: p-type GaAs single crystal substrate, J: n-type GaAs epitaxial layer, 3: n-type Ga1-air Al, etc. As epitaxial (211, t...
- Collection electrode, j... Antireflection film, 6... Back electrode, 7... P-type GaAs epitaxial layer. Q"J' ! iγ Applicant IJ Hon Telegraph? ■ Public Corporation Contract Myohana Figure 2 1 MeV electron a?X radiation amount (Cm-2) Figure 3 Figure 4 Oryoku
Claims (1)
キシャル薄膜上に、厚さ０３〜７μｍのｎＹ ＧａＡ４
をエピタキシャル成長させることによって形成し、さら
に前記ｎ形ａ ａ Ａ ｓ＃上に混晶半導体Ｇａ ４
ｘＡｌｘＡ ｓのｎ形層をエピタキシャル成長させるこ
とによって形成したことを特徴とする太＠電池。p-type GaAl? nY GaA4 with a thickness of 03 to 7 μm on a single crystal substrate or GaAs epitaxial thin film.
is formed by epitaxial growth, and further a mixed crystal semiconductor Ga 4 is formed on the n-type aa As#.
A thick@ battery characterized by being formed by epitaxially growing an n-type layer of xAlxAs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57186077A JPS5975677A (en) | 1982-10-25 | 1982-10-25 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57186077A JPS5975677A (en) | 1982-10-25 | 1982-10-25 | Solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5975677A true JPS5975677A (en) | 1984-04-28 |
Family
ID=16181975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57186077A Pending JPS5975677A (en) | 1982-10-25 | 1982-10-25 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5975677A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05326996A (en) * | 1992-05-20 | 1993-12-10 | Hitachi Ltd | Semiconductor device |
| JP2015019039A (en) * | 2013-07-15 | 2015-01-29 | エムコア ソーラー パワー インコーポレイテッド | Radiation resistant inverted metamorphic multijunction solar cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5137582A (en) * | 1974-09-25 | 1976-03-29 | Sharp Kk | Gaassgaals heterosetsugogatataiyodenchi |
-
1982
- 1982-10-25 JP JP57186077A patent/JPS5975677A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5137582A (en) * | 1974-09-25 | 1976-03-29 | Sharp Kk | Gaassgaals heterosetsugogatataiyodenchi |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05326996A (en) * | 1992-05-20 | 1993-12-10 | Hitachi Ltd | Semiconductor device |
| JP2015019039A (en) * | 2013-07-15 | 2015-01-29 | エムコア ソーラー パワー インコーポレイテッド | Radiation resistant inverted metamorphic multijunction solar cell |
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