JPS5971081A - Liquid crystal display and manufacture thereof - Google Patents

Liquid crystal display and manufacture thereof

Info

Publication number
JPS5971081A
JPS5971081A JP57181365A JP18136582A JPS5971081A JP S5971081 A JPS5971081 A JP S5971081A JP 57181365 A JP57181365 A JP 57181365A JP 18136582 A JP18136582 A JP 18136582A JP S5971081 A JPS5971081 A JP S5971081A
Authority
JP
Japan
Prior art keywords
liquid crystal
crystal display
substrate
display device
organic insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57181365A
Other languages
Japanese (ja)
Inventor
小松原 吉明
宗方 英子
井出 恭三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57181365A priority Critical patent/JPS5971081A/en
Publication of JPS5971081A publication Critical patent/JPS5971081A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 この発明は、反射型の液晶表示装置及びその製造方法に
係り、特に白色表面となるように反射部を改良した液晶
表示装置及びその製造方法に関する。
[Detailed Description of the Invention] [Technical Field to which the Invention Pertains] The present invention relates to a reflective liquid crystal display device and a method for manufacturing the same, and more particularly to a liquid crystal display device with a reflective portion improved to have a white surface and a method for manufacturing the same. Regarding.

し発明の技術的背景及びその問題点〕 液晶表示装置、例えばゲスト・ホスト型を用いた反射型
の表示装置のコントラストは、白色表面である反射面に
大きく依存するため、前記反射面が極力明るい白色表面
であることが望ましい。この表面の実現法としては、特
開昭57−66473号公報(二開示されている白色表
面形成用マスクを用いた方法があるが、上記マスクの実
現性、上記方法の再現性の困難及び多重反射による光の
吸収が生じるという欠点があった。この欠点の改善手段
として本件出願人はすでに特願昭57−7923号を出
願している。すなわちこれは、基板:二有機絶縁物層を
形成し、ホトレジストでパターニングしたのち、ウェッ
トエツチングして有機絶縁物層に凹凸形状を形成し、さ
らに、熱処理により凹凸表面をなめらかにした後、その
上に反射率の高い金属層を蒸着して反射面を形成したも
のである。この方法:二よれば金属層の凹凸表面をなめ
らかに形成できるため多重反射が少なく、明るくコント
ラストの高い反射面とすることができるが、量産工程で
ウェットエツチングを用いる場合、エツチングが広範囲
に及ぶときには周辺部と中心部ではエツチングされる深
さに差が生じパターン形状が不均一となるおそれがある
。又、ホトレジストの付着力の微妙な差により凹凸のテ
ーパー角度も変化する。即ち、反射部の白色表面形成に
おいて、均−性及び再現性にさら)二改善が望まれてい
た。
[Technical background of the invention and its problems] The contrast of a liquid crystal display device, for example, a reflective display device using a guest-host type, largely depends on the reflective surface, which is a white surface. A white surface is desirable. As a method for realizing this surface, there is a method using a mask for forming a white surface disclosed in Japanese Patent Application Laid-Open No. 57-66473 (2). There was a drawback that absorption of light occurred due to reflection.As a means to improve this drawback, the applicant has already filed Japanese Patent Application No. 7923/1983. After patterning with photoresist, wet etching is performed to form an uneven shape on the organic insulating layer, and after the uneven surface is smoothed by heat treatment, a highly reflective metal layer is deposited on top of it to form a reflective surface. According to this method, the uneven surface of the metal layer can be formed smoothly, resulting in fewer multiple reflections and a bright, high-contrast reflective surface, but when wet etching is used in the mass production process. When etching is carried out over a wide area, there is a difference in the depth of etching between the periphery and the center, which may result in an uneven pattern shape.Furthermore, the taper angle of the unevenness changes due to subtle differences in the adhesion of the photoresist. That is, in the formation of a white surface of the reflective part, further improvements in uniformity and reproducibility have been desired.

〔発明の目的〕[Purpose of the invention]

この発明は、上記の点を改良したもので、極めて均−性
及び再現性(二優れた白色反射部を肩する液晶表示装置
及びその製造方法を提供する、ことを目的とする。
The present invention improves on the above points, and aims to provide a liquid crystal display device that has a white reflective area with extremely high uniformity and reproducibility, and a method for manufacturing the same.

〔発明の概要〕[Summary of the invention]

を形成し、さらにこの有機絶縁物層上に反射率の高い金
属層を形成した反射部を有する液晶表示装置及びその製
造方法を得るものである。
The present invention provides a liquid crystal display device having a reflective portion in which a metal layer having a high reflectance is formed on the organic insulating layer, and a method for manufacturing the same.

゛〔発明の実施例〕 以下図面を参照して本発明の詳細な説する。゛[Embodiments of the invention] The present invention will be described in detail below with reference to the drawings.

第1図は本発明による液晶表示装置の一実施例を示す。FIG. 1 shows an embodiment of a liquid crystal display device according to the present invention.

基板(lυ上に、凹凸を作るために基板平面に対し5度
から80度のテーパーを有する凸状部、例えば心ua2
1が形成され、この心材a′!Jを覆うごとくポリイミ
ド樹脂の有機絶縁物層Qlが形成され、さらに有機絶縁
物層上に反射率の高い金属層(141が形成されて、広
範囲に均一な白色面が構成される。
On the substrate (lυ, a convex portion having a taper of 5 degrees to 80 degrees with respect to the substrate plane to create unevenness, for example, the center ua2
1 is formed, and this core material a'! An organic insulating layer Ql of polyimide resin is formed to cover J, and a highly reflective metal layer (141) is further formed on the organic insulating layer to form a uniform white surface over a wide range.

次に、この発明の製造方法の一実施例を第2図。Next, FIG. 2 shows an embodiment of the manufacturing method of the present invention.

第3図を参照して説明する。第2図(a) (b) (
C) (d)は工程順に示した装置の断面図である。ま
ず、基板αD上にエツチング法、メッキ法、リフトオフ
法等のいずれかを用いて多数の心材(121を形成する
。この心材03形成法は例えばエツチング法であればま
ず積層方法、例えばCVD 、スパッタ、蒸着、スピン
ナ・コート等のいずれか)二より第2図(a)に示すよ
うに基板αυ上に積層物、例えば絶縁物、半導体、金属
又はこれらを積み重ねた多層構造の心材となる層(20
を形成する。この層Q1)をマスクc!4を用いて選択
エツチングする。ここでエツチングパターンは第3図に
示すように高密度の配列が望ましく、例えばピッチがl
〜50μの円形で、厚さはo、t−toμが好ましい。
This will be explained with reference to FIG. Figure 2 (a) (b) (
C) (d) is a sectional view of the device shown in the order of steps. First, a large number of core materials (121) are formed on the substrate αD using any of the etching method, plating method, lift-off method, etc. If the method for forming the core material 03 is, for example, the etching method, then the lamination method, such as CVD, sputtering, etc. , evaporation, spinner coating, etc.) As shown in FIG. 20
form. This layer Q1) is masked c! Selective etching is performed using 4. Here, the etching pattern is preferably arranged in a high density as shown in Figure 3, for example, the pitch is l.
It is preferably circular with a diameter of ~50μ and a thickness of o, t-toμ.

エツチングする部分は、円01)又は円以外の部分32
のいずれでもよい。この場合、異方性エツチング、例え
ばドライエツチングのRIE(几eacLive Io
n Etching )を1月いることにより、精度の
良いパターンを形成することができる。又適当なガス、
ガスの圧力等の条件を適当に選ぶことにより、心材a3
に適度のテーパーを形成することができる。このよう(
二して第2図(b)に示すように心材aりを形成した後
、マスクCJ3を除去し、所定の濃度や粘度を有する有
機絶縁物、例えばポリイミド樹脂層a3を第2図(C)
に示すように形成する。
The part to be etched is circle 01) or the part other than the circle 32
Either of these is fine. In this case, anisotropic etching, for example dry etching RIE (eacLive Io
n Etching) for one month, it is possible to form a highly accurate pattern. Also suitable gas,
By appropriately selecting conditions such as gas pressure, core material a3
A moderate taper can be formed. like this(
After forming the core material a as shown in FIG. 2(b), the mask CJ3 is removed and an organic insulating material having a predetermined concentration and viscosity, such as a polyimide resin layer a3, is formed as shown in FIG. 2(C).
Form as shown.

この形成法は、回転や振動などの手段が好適で、例えば
回転の場合はスピンナを用いて腑定の回転数、例えば2
000rpmから500Orpmでスピンナ・コートし
、有機絶縁物層α皺を形成する。この場合、回転数、有
機絶縁物の粘度を変化させることにより有機絶縁物層a
3の凹凸形状を変えることができる。次にこの有機絶縁
物層眞上に、第2図(d)に示すように反射率の高い金
属、例えばAe、Ag又はこれらを含む合金を単層又は
反射率の高い金属が表面になるように多層に蒸着し、金
属層αaを形成する。即ち、上記の様な構造及び製造方
法によればなめらかな凹凸を有するポリイミド樹脂層0
3を広範囲に亘り、かつ均一に形成することができる。
For this forming method, it is preferable to use means such as rotation or vibration.
Spinner coating is performed at 000 rpm to 500 rpm to form α wrinkles on the organic insulating layer. In this case, by changing the rotation speed and the viscosity of the organic insulator, the organic insulator layer a
3. The shape of the unevenness can be changed. Next, as shown in FIG. 2(d), a single layer of a metal with high reflectance, such as Ae, Ag, or an alloy containing these, is placed directly on the organic insulating layer, or a metal with high reflectance is placed on the surface. is deposited in multiple layers to form a metal layer αa. That is, according to the structure and manufacturing method as described above, a polyimide resin layer having smooth unevenness is obtained.
3 can be uniformly formed over a wide range.

従って有機絶縁物であるポリイミド樹脂層a3上に金属
層Oaを蒸着することにより、ヒ、ロックの発生による
多重反射をなくシ、なめらかで極めて明る7− い白色表面を有する反射部を均一性よ〈果ることかでき
る。
Therefore, by depositing the metal layer Oa on the polyimide resin layer a3, which is an organic insulator, we can eliminate multiple reflections due to the occurrence of hiccups and improve the uniformity of the reflective part, which has a smooth and extremely bright white surface. <I can do it.

次に上記実施例の反射部を用いた液晶表示装置の例を第
4図を用いて説明する。まず、反射部を単なる反射板の
みとして用いたもので、液晶(41)を複数の帯状透明
電極(42)と対向電極(43)が形成された2枚のガ
ラス基板(44)で挾持し、前記液晶層(41)透過光
路の所定の部分に反射型液晶表示装置を構成するように
反射板(45)が配置される。この場合の反射板(45
)は第1図に示した構造であり、反射部αaは反射板の
一方面全面に形成され゛(1,sる。
Next, an example of a liquid crystal display device using the reflective section of the above embodiment will be explained with reference to FIG. First, the reflection part is used only as a reflection plate, and a liquid crystal (41) is sandwiched between two glass substrates (44) on which a plurality of band-shaped transparent electrodes (42) and a counter electrode (43) are formed. A reflective plate (45) is disposed at a predetermined portion of the optical path passing through the liquid crystal layer (41) to constitute a reflective liquid crystal display device. Reflector plate in this case (45
) has the structure shown in FIG. 1, and the reflecting portion αa is formed on the entire surface of one side of the reflecting plate.

さらに、第5図は、液晶(41)を挾持する一方(7)
 ?4極(51)を第2図の反射板で構成した実施例で
ある。
Furthermore, FIG.
? This is an embodiment in which the four poles (51) are constructed from the reflectors shown in FIG. 2.

即ち、液晶層(41)を挾んでガラス基板(44)に形
成された透明電極(43)と基板(45) l二形成さ
れた反射面兼用の゛電極(51)とでマトリクスを構成
している。
That is, a matrix is formed by a transparent electrode (43) formed on a glass substrate (44) sandwiching a liquid crystal layer (41) and an electrode (51) which also serves as a reflective surface formed on a substrate (45). There is.

基板(45)には上記実施例の反射部が形成されてIz
入るが、この場合のように反射部金属層が表示電極を兼
ねるときは、金属層は、ストライプ状、又は島状に分離
されている。
The reflecting portion of the above embodiment is formed on the substrate (45), and Iz
However, when the reflective metal layer also serves as a display electrode as in this case, the metal layer is separated into stripes or islands.

次に、第6図は第2図の基板0υとしC半導体基板を用
いたもので、例えば単結晶シリコン基板(61)上に液
晶駆動用素子、例えばMOSFET (62)、 MO
Sキャパシタ(63)からなるスイッチ/キャノくシタ
アレイが集積形成されたアクティブ・マ) IJクス方
式に適用した例で、1画素分の断面図を示している。
Next, FIG. 6 shows a case in which a C semiconductor substrate is used as the substrate 0υ in FIG.
This is an example applied to the IJ system, in which a switch/capacitor array consisting of an S capacitor (63) is integrated, and a cross-sectional view of one pixel is shown.

上記基板(61)上(1第2図の反射部が形成されてお
り、有機絶縁物層(64)上ベニ反射部金属層(65)
が形成されているが、この場合においても反射部金属層
(65)が表示電極(65)を兼ねており、スルーホー
ル(69)を通してキャパシタに相互配線され、島状に
分離されている。このようにして形成された表示電極(
65)と、全面に透明電極(66)が形成されたガラス
基板(67)との間に液晶層(41)を挾持してマトリ
クス形液晶表示装置が構成される。この場合基板は上記
以外にSOS基板、ガラス上にTPTが形成された基板
等であってもよい。基板上の凹凸をなくすため第7図(
a)に示すように平滑化(71)を設け、この平滑化層
(71)上;二心材α2を形成、又は第7図(b)に示
すように平滑化層を心材として用いることにより凹凸を
有する基板上にもこの発明を適用することができる。さ
らに基板上に島状の心材を形成した例について説明した
が、基板表面が島状になった多数の凸状部を有する構造
であってもよい。さらにまた上記実施例では多数の凸状
部は規則的配列で説明しだが不規則配列や大きさも不規
則な方が明るい白色反射面の得られる効果がある。
On the substrate (61) (1), the reflective part shown in Fig. 2 is formed, and on the organic insulating layer (64), the reflective part metal layer (65)
In this case as well, the reflective metal layer (65) also serves as the display electrode (65), and is interconnected to the capacitor through the through hole (69) and separated into islands. Display electrodes formed in this way (
65) and a glass substrate (67) on which transparent electrodes (66) are formed, a liquid crystal layer (41) is sandwiched between the glass substrate (67) and a matrix type liquid crystal display device. In this case, the substrate may be an SOS substrate, a substrate on which TPT is formed on glass, etc. in addition to the above. In order to eliminate unevenness on the board, Figure 7 (
A smoothing layer (71) is provided as shown in a), and a two-core material α2 is formed on the smoothing layer (71), or unevenness is created by using the smoothing layer as a core material as shown in FIG. 7(b). The present invention can also be applied to a substrate having. Furthermore, although an example has been described in which an island-shaped core material is formed on the substrate, a structure in which the substrate surface has a large number of island-shaped convex portions may also be used. Furthermore, in the above embodiments, a large number of convex portions are described as being arranged in a regular manner; however, a brighter white reflective surface can be obtained if the convex portions are irregularly arranged and irregular in size.

〔発明の効果〕〔Effect of the invention〕

以上説明したよう1二この発明によれば、広い基板間、
ロット間においてノ(ラツキカー非常:二少すくなり、
なめらかな凹凸で明るい白色表面を持ち、かつ均−性及
び再現性に優れた液晶表示装置及びその製造方法を得る
ことができる。
As explained above, 12 According to this invention, a wide space between substrates,
There will be a slight decrease in the number of lots between lots.
It is possible to obtain a liquid crystal display device having a bright white surface with smooth irregularities and excellent uniformity and reproducibility, and a method for manufacturing the same.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明装置°の一実施例を説明するだめの断
面図、第2図(a) (b) (C)(d)は本発明方
法の一実施例を工程順に説明するだめの断面図、第3図
【ま第2図(b)のエツチングノ(ターン平面図、第4
図乃至第6図は本発明による反射板を液晶表示装置;1
適用した例を説明するだめの断面図、第7図(a) (
b)は本発明装置の他の実施例を説明するためσ〕断面
図である。 11.61.72・・・・・・基板 13.64・・・・・・・・・ 有機絶縁物層22・・
・・・・・・・・・・・・・・・・ エツチング用マス
ク14.51.65・・・・・・反射金属層12・・・
・・・・・・・・・・・・・・・凹凸を作るための6相
44.67・・・・・・・・・ ガラス基板42.43
.66・・・・・・透明導電膜41・・・・・・・・・
・・・・・・液晶層45・・・・・・・・・・・・・白
色面を形成した基板61・・・・・・・・・・・・・・
半導体基板62・・・・・・・・・・・・・・MO8I
”ET63・・・・・・・・・・・・・・・MOSキャ
パシタ(7317)  代理人 弁理士 則 近 憲 
佑 (ほか1名)第1図 第2図 第3図 第4図 第5図
FIG. 1 is a sectional view of a diagram for explaining an embodiment of the apparatus of the present invention, and FIGS. A sectional view of FIG.
1 to 6 show the reflection plate according to the present invention in a liquid crystal display device;
A cross-sectional view of the tank to explain an example of its application, Fig. 7(a) (
b) is a cross-sectional view σ] for explaining another embodiment of the device of the present invention. 11.61.72... Substrate 13.64... Organic insulating layer 22...
...... Etching mask 14.51.65... Reflective metal layer 12...
・・・・・・・・・・・・ 6-phase to create unevenness 44.67 ・・・・・・・・・ Glass substrate 42.43
.. 66...Transparent conductive film 41...
・・・・・・Liquid crystal layer 45・・・・・・・・・・・・Substrate 61 with white surface formed・・・・・・・・・・・・・・・・・・
Semiconductor substrate 62・・・・・・・・・・・・MO8I
”ET63・・・・・・・・・・・・MOS capacitor (7317) Agent Patent attorney Ken Chika
Yu (1 other person) Figure 1 Figure 2 Figure 3 Figure 4 Figure 5

Claims (7)

【特許請求の範囲】[Claims] (1)反射型の液晶表示装置において、多数の凹もしく
は凸状部が設けられた基板と、この基板上に設けられ、
表面が前記凹もしくは凸状部の形状に応じたなめらかな
凹凸形状を有する有機絶縁物層と、との有機絶縁物層上
に設けられたなめらかな凹凸形状を有する金属層とを具
備してなることを特徴とする液晶表示装置。
(1) In a reflective liquid crystal display device, a substrate provided with a large number of concave or convex portions, and a substrate provided on this substrate,
an organic insulating layer whose surface has a smooth uneven shape corresponding to the shape of the concave or convex portion; and a metal layer provided on the organic insulating layer and having a smooth uneven shape. A liquid crystal display device characterized by:
(2)前記有機絶縁物層は、ポリイミド樹脂であること
を特徴とする特許請求の範囲第1項記載の液晶表示装置
(2) The liquid crystal display device according to claim 1, wherein the organic insulating layer is made of polyimide resin.
(3)前記凸状部は、不規則に形成され、基板平面に対
し5度から80度のテーパーを有することを特徴とする
特許請求の範囲第1項記載の液晶表示装置。
(3) The liquid crystal display device according to claim 1, wherein the convex portion is formed irregularly and has a taper of 5 degrees to 80 degrees with respect to the plane of the substrate.
(4)前記基板は、凹凸を有する基板とこの凹凸を有す
る基板−Fに形成された平滑化層とからなることを特徴
とする特許請求の範囲第1項記載の液晶表示装置。
(4) The liquid crystal display device according to claim 1, wherein the substrate is composed of a substrate having unevenness and a smoothing layer formed on the substrate-F having unevenness.
(5)前記金属層は表示電極を兼ねたものであることを
特徴とする特許請求の範囲第1項記載の液晶表示装置。
(5) The liquid crystal display device according to claim 1, wherein the metal layer also serves as a display electrode.
(6)液晶表示装置の反射面を製造するに際し、多数の
凹もしくは凸状部を有する基板を形成する工程と、この
基板上に表面が前記凹もしくは凸状部の形状に応じたな
めらかな凹凸形状を有する有機絶縁物層を形成する工程
と、この有機絶縁物層上に金属層を形成する工程とを具
備してなることを特徴とする液晶表示装置の製造方法。
(6) When manufacturing the reflective surface of a liquid crystal display device, there is a step of forming a substrate having a large number of concave or convex portions, and a step on which the surface of the substrate has smooth concavities and convexities corresponding to the shape of the concave or convex portions. 1. A method for manufacturing a liquid crystal display device, comprising: forming an organic insulating layer having a shape; and forming a metal layer on the organic insulating layer.
(7)前記有機絶縁物層は、スピンナ・コートにより形
成することを特徴とする特許請求の範囲第6項記載の液
晶表示装置の製造方法。
(7) The method for manufacturing a liquid crystal display device according to claim 6, wherein the organic insulating layer is formed by spinner coating.
JP57181365A 1982-10-18 1982-10-18 Liquid crystal display and manufacture thereof Pending JPS5971081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57181365A JPS5971081A (en) 1982-10-18 1982-10-18 Liquid crystal display and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57181365A JPS5971081A (en) 1982-10-18 1982-10-18 Liquid crystal display and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5971081A true JPS5971081A (en) 1984-04-21

Family

ID=16099446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57181365A Pending JPS5971081A (en) 1982-10-18 1982-10-18 Liquid crystal display and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5971081A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02230130A (en) * 1989-12-15 1990-09-12 Semiconductor Energy Lab Co Ltd Liquid crystal electrooptic device
JPH0627481A (en) * 1992-07-10 1994-02-04 Sharp Corp Reflective active matrix substrate, its production and liquid crystal display device
JPH10186359A (en) * 1998-01-12 1998-07-14 Sharp Corp Reflection type liquid crystal display device
JP2000284272A (en) * 1999-03-29 2000-10-13 Sharp Corp Liquid crystal display device and its production
WO2001061403A1 (en) * 2000-02-16 2001-08-23 Matsushita Electric Industrial Co., Ltd. Formed body, reflecting plate, reflection display device, and method for fabricating reflecting plate
US6407784B1 (en) 1998-03-11 2002-06-18 Nec Corporation Reflection type liquid crystal display and method of fabricating the same
JP2003295211A (en) * 2003-03-18 2003-10-15 Sharp Corp Method for manufacturing liquid crystal display device
JP2003307729A (en) * 2003-03-18 2003-10-31 Sharp Corp Method for manufacturing liquid crystal display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5655920A (en) * 1979-10-13 1981-05-16 Toshiba Corp Liquid crystal display device
JPS5683781A (en) * 1979-12-10 1981-07-08 Matsushita Electric Ind Co Ltd Image display unit and production thereof
JPS5799680A (en) * 1980-12-11 1982-06-21 Suwa Seikosha Kk Liquid crystal display and manufacture thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5655920A (en) * 1979-10-13 1981-05-16 Toshiba Corp Liquid crystal display device
JPS5683781A (en) * 1979-12-10 1981-07-08 Matsushita Electric Ind Co Ltd Image display unit and production thereof
JPS5799680A (en) * 1980-12-11 1982-06-21 Suwa Seikosha Kk Liquid crystal display and manufacture thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02230130A (en) * 1989-12-15 1990-09-12 Semiconductor Energy Lab Co Ltd Liquid crystal electrooptic device
JPH0627481A (en) * 1992-07-10 1994-02-04 Sharp Corp Reflective active matrix substrate, its production and liquid crystal display device
JPH10186359A (en) * 1998-01-12 1998-07-14 Sharp Corp Reflection type liquid crystal display device
US6407784B1 (en) 1998-03-11 2002-06-18 Nec Corporation Reflection type liquid crystal display and method of fabricating the same
JP2000284272A (en) * 1999-03-29 2000-10-13 Sharp Corp Liquid crystal display device and its production
WO2001061403A1 (en) * 2000-02-16 2001-08-23 Matsushita Electric Industrial Co., Ltd. Formed body, reflecting plate, reflection display device, and method for fabricating reflecting plate
JP2003295211A (en) * 2003-03-18 2003-10-15 Sharp Corp Method for manufacturing liquid crystal display device
JP2003307729A (en) * 2003-03-18 2003-10-31 Sharp Corp Method for manufacturing liquid crystal display device

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