JPS596569A - Manufacture of hybrid integrated circuit - Google Patents

Manufacture of hybrid integrated circuit

Info

Publication number
JPS596569A
JPS596569A JP11652982A JP11652982A JPS596569A JP S596569 A JPS596569 A JP S596569A JP 11652982 A JP11652982 A JP 11652982A JP 11652982 A JP11652982 A JP 11652982A JP S596569 A JPS596569 A JP S596569A
Authority
JP
Japan
Prior art keywords
terminal
substrate
thermocompression bonding
integrated circuit
hybrid integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11652982A
Other languages
Japanese (ja)
Other versions
JPS6347348B2 (en
Inventor
Sadao Shimodaira
下平 定男
Mutsuo Yamanaka
山中 睦生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11652982A priority Critical patent/JPS596569A/en
Publication of JPS596569A publication Critical patent/JPS596569A/en
Publication of JPS6347348B2 publication Critical patent/JPS6347348B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/284Applying non-metallic protective coatings for encapsulating mounted components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/328Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding

Landscapes

  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To offer the manufacture of a hybrid integrated circuit of excellent economical property and stable reliability by a method wherein Au that is excellent in ductility and malleability is used for the thermocompression bonding junction of a terminal. CONSTITUTION:A metallic layer 3 of a metal that is flexible and has ductility and malleability, e.g. Au is formed to the thickness of 0.5-2.0mum only at the thermocompression bonding junction of the terminal base body 2 in the Fig. (a). Next, after the thermocompression bonding junction of said terminal is superposed on the surface of a conductive layer 6 of a substrate 1 wherein a thin film circuit is formed, the terminal 4 is joined to said substrate 1 by pressing a heated compression bonding tool 5 at the part of the terminal 4 to be joined. After the junction of the terminal 4 and the surface of the substrate 1 are coated with e.g. Si resin 7, they are dried for 30min in a constant temperature chamber at 150 deg.C. Successively, the entire body of the terminal is coated with flux, and pre-heating is performed for approx. one min on a hot plate at 100 deg.C, thereafter the entire body of the substrate to which the terminal is connected is dipped in a solder fusion bath at 230 deg.C, and accordingly the solder 8 is deposited on the terminal. Then, after the entire body of the substate is washed with hot water at approx. 30 deg.C, it is dried for 30min in the constant temperature chamber at 70 deg.C.

Description

【発明の詳細な説明】 本発明は混成集積回路に係り、外部引出用端子として安
価な金属を使用し、且つ信頼性の優れた調造方法に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a hybrid integrated circuit, and relates to a manufacturing method that uses inexpensive metal as an external lead-out terminal and has excellent reliability.

一般に混成集積回路装置等の製造に際し、薄膜基板上電
子部品の端子を接続する場合、熱圧着法が用いられる。
In general, when manufacturing hybrid integrated circuit devices and the like, a thermocompression bonding method is used when connecting terminals of electronic components on a thin film substrate.

第1図(a)〜(C)は従来の混成集積回路装置におけ
る製造方法の一例を説明するための断面図である。
FIGS. 1A to 1C are cross-sectional views for explaining an example of a manufacturing method for a conventional hybrid integrated circuit device.

まず、第1図(a)のように公知の方法により薄膜回路
を形成した基板1と第1図(b)のコパールあるいは銅
から成る端子基体20表面の全面に1例えば金の如く熱
圧着に適し六接合用金属層3を付着させた端子4とを重
ね合せた後、加熱された圧着工具5を端子4の接合しよ
うとする部分に押しあて端子4を前記基板1の導電層6
上に接合する。
First, a substrate 1 with a thin film circuit formed thereon by a known method as shown in FIG. 1(a) and a terminal base 20 made of copper or copper as shown in FIG. After overlapping the terminals 4 to which the metal layer 3 for bonding is attached, a heated crimping tool 5 is pressed against the part of the terminals 4 to be bonded, and the terminals 4 are bonded to the conductive layer 6 of the substrate 1.
Join on top.

次に、第1図(C)のように前記端子4の接合部及び基
板lの表面を樹脂7でコートする。従って、熱圧着法に
よシ基板に電子部品の端子を接合する場合の備えるべき
性状としては、まず端子母材金属が塑性変形を生じ易い
ことが要件となっており、且つ、該端子がプリン。ト板
等に安定して接続され得る為に一般には銅の母材金属を
用い、この母材金属の表面の全面に金などの金属層を被
着した端子を用いている。しかるに、金は高価な金属で
あるためにこれを基板との接合用金属層及びプリント板
との接続用金属層として用いた端子は高価なものとなり
、低価格の集積回路装置を製造するうえて大きな障害と
な“っていた。また比較的安価な銅を用いることも可能
であるが、銅は表面酸化を受は易いため、熱圧着の際の
所望の接合強度1得ることが難しいこと、及びプリント
板等への半田接続が不安定であることから種々の問題を
生ずる。
Next, as shown in FIG. 1(C), the joint portion of the terminal 4 and the surface of the substrate 1 are coated with a resin 7. Therefore, when bonding electronic component terminals to a board using thermocompression bonding, the required properties are that the base metal of the terminal is susceptible to plastic deformation, and that the terminal is . In order to be able to stably connect to a board or the like, a base metal of copper is generally used, and a terminal is used in which a metal layer such as gold is coated on the entire surface of the base metal. However, since gold is an expensive metal, terminals using it as the metal layer for bonding to the substrate and the metal layer for connecting to the printed circuit board are expensive, making it difficult to manufacture low-cost integrated circuit devices. It was also possible to use relatively inexpensive copper, but since copper is susceptible to surface oxidation, it was difficult to obtain the desired bonding strength 1 during thermocompression bonding. Various problems arise due to unstable solder connections to printed boards and the like.

本発明は経済性の優れた且つ信頼性の安定し念混成集積
回路の製造方法を提供するものである。
The present invention provides a method for manufacturing a hybrid integrated circuit which is highly economical and has stable reliability.

本発明の特徴は、薄膜回路を形成し九基板上に外部引出
用端子を熱圧着により接続する工程と、この基板上及び
圧着部を樹脂コートする工程と。
The features of the present invention include a step of forming a thin film circuit and connecting an external lead-out terminal on a substrate by thermocompression bonding, and a step of coating the substrate and the crimped portion with resin.

この外部引出用端子を半゛田ディップする工程を少なく
とも含む混成集積回路の製造方法にある。
The method of manufacturing a hybrid integrated circuit includes at least the step of solder-dipping this external lead-out terminal.

以下、本発明を実施例により説明する。第2図(a)に
おいて、端子基体2を例えば0.25mm厚さの銅の板
材を工、チング又は打抜きによって所望の形状に成形し
、しかる後、前記により得た端子基体2の熱圧着接合部
のみに柔軟かつ延展性のある金属、例えば金の如き金属
層3に0.5〜2.0μm の厚さに形成する。
The present invention will be explained below using examples. In FIG. 2(a), the terminal base 2 is formed by forming a copper plate material with a thickness of, for example, 0.25 mm into a desired shape by machining, chiming, or punching, and then thermocompression bonding of the terminal base 2 obtained in the above manner. The metal layer 3 is made of a flexible and ductile metal, such as gold, and has a thickness of 0.5 to 2.0 μm.

次に、第2図(b)のように公知の方法により薄膜回路
を形成した基板1の導電層6の表面に、前記端子の熱圧
着接合部とを重ね合せた後、加熱された圧着工具5t一
端子4の接合しようとする部分に押しあて、端子4を前
記基板1に接合させる。
Next, as shown in FIG. 2(b), the thermocompression bonding portion of the terminal is superimposed on the surface of the conductive layer 6 of the substrate 1 on which a thin film circuit is formed by a known method, and then a heated crimping tool is applied. 5t - press against the part of the terminal 4 to be bonded to bond the terminal 4 to the substrate 1.

次に第2図(C)のように前記端子4の接合部及び基板
1の表面を、例えばシリコン樹脂KE1212ABC(
信越シリコン(株)製)7t−コートした後、150℃
の恒温槽で30分乾燥する。続いて第2図(d)のよう
に端子全体に7ラツクスを塗布し、100°Cのホヤド
ブレート上で1分根度予備加熱を行りた後、230℃の
半田溶融槽に、端子が接続された基板全体を浸し、端子
に半田8を付着させる。次に、基板全体を30℃程度の
温水で洗浄した後、70℃の恒温槽で30分乾燥する。
Next, as shown in FIG. 2(C), the joint portion of the terminal 4 and the surface of the substrate 1 are coated with silicone resin KE1212ABC (
After coating with 7t (manufactured by Shin-Etsu Silicon Co., Ltd.), 150℃
Dry in a constant temperature bath for 30 minutes. Next, as shown in Figure 2(d), 7lux was applied to the entire terminal, preheated for 1 minute on a hot plate at 100°C, and then the terminal was connected to a solder melting tank at 230°C. The entire board is soaked and solder 8 is applied to the terminals. Next, the entire substrate is washed with warm water at about 30° C., and then dried in a constant temperature bath at 70° C. for 30 minutes.

このようにして、本発明による、混成集積回路を得るこ
とができる。
In this way, a hybrid integrated circuit according to the invention can be obtained.

本発明によれば、端子の熱圧着接合部は延展性の優れた
金を用いることにより、端子と基板との接合強度は従来
の端子基体の表面全面に金を形成したものと同等であり
、その他は半田で覆われることにより、プリント板との
接続も安定したものとなル、経済性の非常に優れた、且
つ、信頼性の安定した混成集積回路を得ることが可能と
なる。
According to the present invention, the thermocompression bonding portion of the terminal uses gold with excellent ductility, so that the bonding strength between the terminal and the substrate is equivalent to that of a conventional terminal base body in which gold is formed on the entire surface. By covering the other parts with solder, the connection with the printed circuit board becomes stable, making it possible to obtain a hybrid integrated circuit that is extremely economical and has stable reliability.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)〜(C)は従来の混成集積回路の製造方法
を工程順に説明するための断面図、第2図(a)〜(d
)は本発明による製造方法の工程順の断面図である。 なお図において。 1・・・・・・基板、2・・・・・・端子基体、3・・
・・・・接合用金属層、4・・・・・・端子、5・・・
・・・圧着工具、6・・・・・・導電層、7・・・・・
・シリコン樹脂、8・・・・・・半田、である。
FIGS. 1(a) to (C) are cross-sectional views for explaining a conventional method for manufacturing a hybrid integrated circuit in the order of steps, and FIGS. 2(a) to (d)
) is a cross-sectional view of the process order of the manufacturing method according to the present invention. In addition, in the figure. 1... Board, 2... Terminal base, 3...
...Metal layer for joining, 4...Terminal, 5...
... Crimping tool, 6 ... Conductive layer, 7 ...
・Silicone resin, 8...Solder.

Claims (1)

【特許請求の範囲】[Claims] 薄膜回路を形成した基板上に外部引出用端子を熱圧着に
より接続する工程と、前記基板上及び前記圧着部を樹脂
コートする工程と、前記外部引出用端子を半田ディツプ
する工程を少なくとも含むことを特徴とする混成集積回
路の製造方法。
The method includes at least the steps of: connecting an external lead terminal to a substrate on which a thin film circuit is formed by thermocompression bonding; coating the board and the crimp portion with a resin; and dipping the external lead terminal with solder. A method for manufacturing a featured hybrid integrated circuit.
JP11652982A 1982-07-05 1982-07-05 Manufacture of hybrid integrated circuit Granted JPS596569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11652982A JPS596569A (en) 1982-07-05 1982-07-05 Manufacture of hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11652982A JPS596569A (en) 1982-07-05 1982-07-05 Manufacture of hybrid integrated circuit

Publications (2)

Publication Number Publication Date
JPS596569A true JPS596569A (en) 1984-01-13
JPS6347348B2 JPS6347348B2 (en) 1988-09-21

Family

ID=14689377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11652982A Granted JPS596569A (en) 1982-07-05 1982-07-05 Manufacture of hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS596569A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54140167A (en) * 1978-04-24 1979-10-31 Nippon Electric Co Method of producing integrated circuit device
JPS56124254A (en) * 1980-03-05 1981-09-29 Nec Corp Indication device
JPS5776775A (en) * 1980-10-30 1982-05-13 Suwa Seikosha Kk Method of soldering lead wire

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54140167A (en) * 1978-04-24 1979-10-31 Nippon Electric Co Method of producing integrated circuit device
JPS56124254A (en) * 1980-03-05 1981-09-29 Nec Corp Indication device
JPS5776775A (en) * 1980-10-30 1982-05-13 Suwa Seikosha Kk Method of soldering lead wire

Also Published As

Publication number Publication date
JPS6347348B2 (en) 1988-09-21

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