JPS596377A - Magnetron sputtering apparatus - Google Patents

Abstract

PURPOSE:To provide a magnetron sputtering apparatus enlarged in the available utilizing region of a target, by making the mutual positional relation of a pair of magnets arranged in the vicinity of the surface of a cathode target opposed to an anode variable. CONSTITUTION:A pair or more of magnets 6a, 6b of which mutually different magnetic pole surfaces are directed to an anode are arranged in the vicinity of the surface of a cathode target 2 opposed to the anode arranged in a vacuum container. These magnets 6a, 6b for generating magnetic fields are formed into a mutually movable structure or at leastone of each pair of the magnets 6a, 6b is made exchangeable with a magnet different in a size. By this method, sputtered regions 9, 9' are enlarged and the usable time of the same target 2 can be prolonged. In addition, the structural irregularity of a product can be suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetron sumi9 ivy device that utilizes magnetron discharge in a field where an electric field and a magnetic field are perpendicular to each other.

In a magnetron sputtering device, a pair is installed on the back side of the cathode target, etc. so that a magnetic field perpendicular to the electric field between the cathode target and the anode, which face each other, is obtained near the opposing surfaces of the cathode target and the anode. It is common for a number of magnets to be placed. Then, a target object on which a film is to be formed is placed on the surface of the anode facing the cathode target.

In such magnetron sputtering equipment, the shape of the sputter consuming surface of the target used as the cathode corresponds to the installation state of the pair of magnets, and the shape is the area surrounded by the magnetic field generated by the pair of magnets. is hollow
It becomes a shape that is consumed in a low) manner.

The target can be used until a part of the thickness is consumed, but once that part is consumed, the entire piece must be replaced even if most of the other parts remain. Of course, its effective usage amount is 15 to 15% of the total target weight.
There were many cases where it was seen at around 25 cm.

In order to improve the yield of products due to "variations" between lots of targets, and furthermore to improve economic efficiency, a method of expanding the effective usable area of targets is desired.

An object of the present invention is to provide a magnetron sputtering apparatus that can expand the effective use area of a target, and to improve the economic efficiency of a target.

According to the present invention, a cathode target and an anode are arranged to face each other in a vacuum container connected to an exhaust system;
A power supply connected between the cathode target 9 and the anode, and a magnetic field perpendicular to the electric field between the cathode target and the anode caused by the power supply near the surface of the cathode doubt facing the anode. and at least one pair of magnets arranged with mutually different magnetic pole faces facing the anode.

A magnetron sputtering apparatus is obtained in which a target object is placed on the surface of the anode facing the cathode target, characterized in that the relative positional relationship between the pair of magnets is variable.

This will be explained below with reference to one drawing.

Referring to FIG. 1, the conventional magnetron sputtering apparatus includes a cathode target 2 and an anode 3 arranged to face each other in a vacuum chamber 1, and a cathode target 2 and an anode 3 arranged to face each other in a vacuum chamber 1.
A DC high voltage source 5 (a high frequency high voltage source may be used instead) connected between In order to obtain a magnetic field orthogonal to the electric field between the cathode target 2 and anode 3, a pair of annular magnets 6a and 6b are arranged with different magnetic pole faces facing the anode 3, The target object 4 is placed on the surface facing the target 8t 2.

An exhaust system 8 such as a rotary pump or a diffusion pump is connected to the vacuum container 1, and an M gas introduction path system (not shown) is also connected thereto. Further, the pair of annular magnets 6a and 6b described above are arranged on the second surface (back surface) side of the cathode target 2, which is opposite to the first surface facing the anode 3. Also.

A pair of annular magnets 6a and 6b are fixed to the bottom magnetic material 6c. The magnetic flux Φ generated from such a pair of magnets 6a and 6b is generated on the surface of the cathode target 2 facing the anode 3 (the first
It is configured to be perpendicular to the electric field near the surface of the magnetic field, and to form a radial shape in order to cause the electrons to rotate within the magnetic field.

In the magnetron sputtering apparatus, when a suitable negative potential is supplied to the cathode target 2 and a magnetic field is applied, a so-called magnetron discharge occurs in the space between the cathode target 2 and the anode 3. In other words, the magnetron sputtering apparatus of 2008 applies a magnetic field orthogonal to the electric field in order to focus the plasma near the first surface (the surface facing the anode 3) of the cathode target 2 to form a high-density plasma. use.

Furthermore, the orthogonal electromagnetic field causes the emitted electrons to continuously rotate in the vicinity of the first surface of the cathode target 2. On the other hand, sputtered particles 7 scattered from the cathode material due to the collision of positive ions in the plasma with the cathode tar 2 adhere to the surface of the target object 4, forming a film. Furthermore, in this sputtering apparatus, the locus of movement of electrons is the same as the magnet 6a.

6b is longer so that electrons remain in the space for a longer time to facilitate discharge, but the ratio of electrons hitting the anode 3 is small and the temperature of the anode 3 hardly rises.

Referring to FIG. 2, the cathode target 2 in FIG.
Once this is determined, the center line of the annular sputter region 9 becomes the deepest sputter line 10. on the other hand.

The electrons occupy the space above the above-mentioned annular suffix 9 ivy region 9 with the symbol 11
Performs a turning motion as shown in . As shown in Fig. 2, the sputtering target 2 hits the surface of the sputtering surface with positive ions that are aggregated in a region surrounded by a magnetic field and scatters the cations. No measures have been taken to expand the scope of Udo 2's effective use.

The present invention focuses on the fact that there is a distribution in consumption in the thickness direction when magnetron sputtering is performed.

By moving the most consumed part 10.

This is an attempt to expand the range of effective use of Target 2. For this reason, Sui! -) A system in which a pair of magnets 6a and 6b for generating a magnetic field of the evening device are configured to be relatively movable;
The structure is such that at least one of the pair of magnets 6a and 6b can be replaced with a magnet of a different size within the vacuum vessel 1.

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 3 shows a cross-sectional view of the target 2 before sputtering, and FIG. 4 shows a cross-sectional shape of the same portion while sputtering is in progress. In FIG. 4, sputtering is most advanced in the center between the magnets.

FIG. 5 shows the relationship between the progress depth (max) of the suction ring targeting At and the applied energy (MJ: medium joule). Figure 6 shows the target 20 after the double annular outer magnet 6b has been moved closer to the center, the outer magnet 6b has been replaced with a smaller diameter one, and the deepest sputtered line 10 of the target 2 has been moved closer to the center. A cross-sectional view of the part.
Figure 7 shows the distance traveled and the rate of change in the weight consumed by the tardoubt.

That is, in the second invention, sputtering was carried out in an argon atmosphere using AA metal, but a pair of magnets 6a
, 6b progresses the most, and as shown in FIG. 5, it progresses in proportion to the applied energy. Next, as shown in Figure 6, when the lines of magnetic force were changed from the state of Φ to the state of Φ' and strutting was performed again, the new strutted area 9' became wider as shown by the cross mark. However, as shown in Figure 7, the expected effects were confirmed.

As explained above, according to the present invention, by making the relative positional relationship between the pair of magnets in the magnetron and the vine device variable, it is possible to expand the range of effective use of the used TARDIT, thereby making it possible to achieve economical become a target.

In particular, by creating a structure in which a pair of magnets can be moved within a vacuum container, or a structure in which at least one of the pair of magnets can be replaced with a magnet of a different size, the usable life of the same TARDAT can be extended. This makes it possible to provide a means to suppress structural variations in products, which is extremely useful.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of a conventional magnetron sputtering apparatus, and FIG. 2 is a diagram of the magnetron sputter i'? FIGS. 3, 4, and 6 are perspective views showing the surface condition of the target of the ivy device. FIGS. 3, 4, and 6 are sectional views of the target portion in an embodiment of the present invention, and FIG. ) (D Diagram showing FJI staff, No. 7
The figure shows the relationship between the rate of change in the spacing between magnets and the rate of change in target weight. 1... Vacuum vessel, 2... Cathode turret, 3...
anode. 4...Target object, 5...Power supply +6a and 6b...
A pair of magnets, 7... S.G. particles, 8. Exhaust system, 9. Annular sputtering region, 10. Deepest sputtered line, 11. Trajectory of electrons. Figure 2 Figure 5 [D addition energy (MJ)

Claims (1)

[Claims] 1. A cathode target and an anode arranged to face each other in a vacuum container connected to an exhaust system. and a power source connected between the cathode target and the anode. A magnetic field perpendicular to the electric field between the cathode target and the anode caused by the power source is obtained near the surface of the cathode target facing the anode. A magnetron sputtering apparatus comprising at least one pair of magnets disposed with mutually different magnetic pole faces facing the anode, and a target object is disposed on a surface of the anode facing the cathode target, wherein the magnetron sputtering apparatus comprises: A magnetron sputtering device characterized by variable relative positional relationship.