JPS5963747A - Manufacture of glass tube diode - Google Patents
Manufacture of glass tube diodeInfo
- Publication number
- JPS5963747A JPS5963747A JP17476582A JP17476582A JPS5963747A JP S5963747 A JPS5963747 A JP S5963747A JP 17476582 A JP17476582 A JP 17476582A JP 17476582 A JP17476582 A JP 17476582A JP S5963747 A JPS5963747 A JP S5963747A
- Authority
- JP
- Japan
- Prior art keywords
- glass tube
- glass
- static electricity
- diode
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000003068 static effect Effects 0.000 claims abstract description 16
- 230000005611 electricity Effects 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 239000003513 alkali Substances 0.000 claims 1
- 239000000428 dust Substances 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 abstract 1
- 230000008929 regeneration Effects 0.000 abstract 1
- 238000011069 regeneration method Methods 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
不発ゆ１はＤＨＤ（ダフル・ヒートシンク・タイオード
）構造をもつガラス管タイオードの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a glass tube diode having a DHD (duffle heat sink diode) structure.
そのようなガラスもダイオードは、例えば第１図に断面
図で示すような構造を有し、タイオードチップ１は両面
に設けられた金属電極２，３によりそわぞれ、例えはジ
ュメット線によりつくられたヒートシンク４の端面に接
触する。この電ｗＬ２；３とヒートシンク４の間の圧力
はヒートシンク４の０Ｉ１１面に融着するガラス管５に
より形成され、゛同時にチップ１はガラス管内に封止さ
れる０ヒートシンク４の反チップ側にはリード線６が溶
接されていて外部接続に役立つ。このガラス管タイオー
ドの製造はダイオードチップ１および両１−−トシンク
４をガラス管５内に挿入し、適応した方法でガラス管５
を加熱してヒートシンク４に融着させることによって行
われる。この場合問題になるのはガラス管５に生ずる静
電気である。ツｙラスｔ１は、例えは低つ′ルカリガラ
スからなるが、ガラス管メーカーからの輸送時および保
管時に環Ｑ 、条件により静電気が発生し、この靜゛１
気Ｖごより製逆工程で使用で使用する才でにほこり、ご
みなどを吸漸し、チップと共に封入されてしまう。才た
この静霜１句、のために第２図に示すようにチップが正
常な位置をとるのが妨げられ、封入の支障となることが
ある。こねらを防止するために、一般には静電気除去処
理として納入されたガラス管をまとめて、例えば４００
℃１時間で熱処理することを行う。しかしこの場合にも
製造工程に使用する前に再び静電気を帯び、完全にほこ
り混入等の対策とならないのが実状である。Such a glass diode has a structure, for example, as shown in the cross-sectional view in FIG. contact with the end surface of the heat sink 4 that has been removed. The pressure between this electric current wL2;3 and the heat sink 4 is created by the glass tube 5 that is fused to the 0I11 surface of the heat sink 4. At the same time, the chip 1 is sealed inside the glass tube. A lead wire 6 is welded to serve as an external connection. The manufacture of this glass tube diode involves inserting the diode chip 1 and both sinks 4 into the glass tube 5, and then inserting the diode chip 1 into the glass tube 5 in an adapted manner.
This is done by heating and fusing it to the heat sink 4. In this case, the problem is static electricity generated in the glass tube 5. Twist glass T1 is made of low-luka glass, for example, but static electricity is generated during transportation from the glass tube manufacturer and during storage, depending on the conditions.
When used in the reverse manufacturing process, dust and dirt are sucked up and encapsulated along with the chip. This static frost may prevent the chip from assuming its normal position, as shown in FIG. 2, and may impede encapsulation. In order to prevent kneading, glass tubes that have been delivered for static electricity removal treatment are generally grouped together, for example, 400
Heat treatment is performed at ℃ for 1 hour. However, even in this case, the material is charged with static electricity again before being used in the manufacturing process, and the actual situation is that it is not a complete countermeasure against dust contamination.
本発明は従って静電気の除去された状押でチップを封入
できるガラス管ダイオードの製造方法を提供することを
目的とする。Therefore, an object of the present invention is to provide a method for manufacturing a glass tube diode in which a chip can be encapsulated in a press in which static electricity is removed.
この目的はガラス管の中に、一方の端面にＩＪ−ド紺が
結合された二つのヒートシンクの他方の端面の間にダイ
オードチップを介在させて挿入し、加熱治具内でガラス
管を両ヒートシンクの側面に融着させて封止する方法に
おいて、治具内にガラス管のみを配置し、静電気除去の
ための短時間の熱処理を行ったのち他部品と組み合わせ
てより高い温度でカラス封止を完了することによって達
成４００℃、１〜２分間で行われ、ガラス封止は６５０
〜７００℃で行オ）れる。The purpose of this is to insert a diode chip into a glass tube between two heat sinks, one end of which is connected to an IJ-do navy blue wire, and the other end of the glass tube connected to both heat sinks in a heating jig. In this method, only the glass tube is placed in a jig, and after a short heat treatment to remove static electricity, it is combined with other parts and glass-sealed at a higher temperature. Achieved by completing the process at 400°C for 1-2 minutes, the glass sealing is completed at 650°C.
It is carried out at ~700°C.
このような方法を採用した結呆、ガラス管ダイオードの
パッケージとして用いられるガラス管から個々に静電気
が前去され、その直後短時間にチップ、ヒートシンクの
挿入ができ封止が行われるので、静電気再発生の機会が
なく、はこり、ごみ等の全くない状態で封止が可能にな
る。実際に、ガラス管ダイオード製造時におけるごみ封
入品の発生率が従来の方法のそれと比較して１／１０な
いし１／２０に低減した。When this method is used, static electricity is removed from each glass tube used as a package for the glass tube diode, and the chip and heat sink can be inserted and sealed in a short period of time. There is no opportunity for this to occur, and sealing can be performed without any scum, dust, etc. In fact, the incidence of dust-filled products during the manufacture of glass tube diodes has been reduced to 1/10 to 1/20 compared to the conventional method.
本発明による他の利点として、従来の方法によるガラス
管の静電気除去のための大量熱処理のあと、例えばステ
ンレス鋼板の皿の上に広げて冷却する場合に生ずるガラ
ス管のかけ、割れなどは、本発明の方法ではガラス管を
静電気除去後その才ま使用するためその虞がないことを
挙げることができる。Another advantage of the present invention is that the cracks and cracks that occur when glass tubes are spread out on a stainless steel plate and cooled after extensive heat treatment to remove static electricity by conventional methods are completely eliminated. In the method of the invention, the glass tube is used immediately after static electricity has been removed, so there is no risk of this happening.
本発明による静電気除去の熱処理条件は、ガラス管の材
質により変わることは勿論であるが、熱処理のために別
の設備を必要とせず、経済的にガラス管ダイオードの製
造時の不良率の低減を達することができ、得られる効果
は極めて高い。Although the heat treatment conditions for removing static electricity according to the present invention will of course vary depending on the material of the glass tube, it does not require separate equipment for heat treatment and can economically reduce the defective rate during the manufacture of glass tube diodes. achievable and the results obtained are extremely high.
第１図は本発明により製造されるガラス管ダイオードの
一例の断面図、第２図はその従来の製造工程中に発生し
た不良の一例を示す断面図である。
１・・・ダイオードチップ、４・・・ヒートシンク、５
・・・ガラス管、６・・・リード線。
ヤ１．１１
″ｌ’２１￥ｌFIG. 1 is a cross-sectional view of an example of a glass tube diode manufactured according to the present invention, and FIG. 2 is a cross-sectional view showing an example of a defect that occurs during the conventional manufacturing process. 1... Diode chip, 4... Heat sink, 5
...Glass tube, 6...Lead wire. Ya1.11 ″l'21￥l
Claims (1)
合された二つのヒートシンクの他方の端面の間にタイオ
ードチップを介在させて挿入し、加熱治具内でカラス管
を両ヒートシンクの側面に融着させて封止する方法にお
いて、治具内にカラス管のみを配置し、静電気除去のた
めの短時間の熱処理を行−゛たのち、他部品と組み合わ
せてより高い温度でガラス封止を完了することを特徴と
するガラス管タイオードの製造方法。 ２、特許請求の範囲第１項記載の方法において、ガラス
管が低アルカリガラスよりなり、静相、気除去のための
熱処理が約４（１０℃、１〜２分間行われ、カラス封止
が６５０〜７００°Ｃで行われることを特徴とするガラ
ス管ダイオードの製造方法。[Claims] 1) Inside the crow tube, one end r [I! A method in which a diode chip is inserted between the other end surfaces of two heat sinks to which lead wires are connected, and a glass tube is fused to the sides of both heat sinks in a heating jig for sealing. A glass tube diode characterized by placing only the glass tube in a jig, performing a short heat treatment to remove static electricity, and then combining it with other parts to complete glass sealing at a higher temperature. manufacturing method. 2. In the method according to claim 1, the glass tube is made of low alkali glass, and the static phase and heat treatment for removing air are performed for about 4 minutes (10° C., 1 to 2 minutes), and the glass tube is sealed. A method for manufacturing a glass tube diode, characterized in that it is carried out at 650 to 700°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17476582A JPS5963747A (en) | 1982-10-05 | 1982-10-05 | Manufacture of glass tube diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17476582A JPS5963747A (en) | 1982-10-05 | 1982-10-05 | Manufacture of glass tube diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5963747A true JPS5963747A (en) | 1984-04-11 |
Family
ID=15984275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17476582A Pending JPS5963747A (en) | 1982-10-05 | 1982-10-05 | Manufacture of glass tube diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5963747A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7610446B2 (en) | 2003-06-19 | 2009-10-27 | Fujitsu Limited | RAID apparatus, RAID control method, and RAID control program |
-
1982
- 1982-10-05 JP JP17476582A patent/JPS5963747A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7610446B2 (en) | 2003-06-19 | 2009-10-27 | Fujitsu Limited | RAID apparatus, RAID control method, and RAID control program |
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