JPS5958955U - Wiring structure in semiconductor devices - Google Patents

Wiring structure in semiconductor devices

Info

Publication number
JPS5958955U
JPS5958955U JP15410082U JP15410082U JPS5958955U JP S5958955 U JPS5958955 U JP S5958955U JP 15410082 U JP15410082 U JP 15410082U JP 15410082 U JP15410082 U JP 15410082U JP S5958955 U JPS5958955 U JP S5958955U
Authority
JP
Japan
Prior art keywords
wiring structure
semiconductor devices
wiring
tin
wsi2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15410082U
Other languages
Japanese (ja)
Inventor
伸好 小林
誠一 岩田
直樹 山本
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP15410082U priority Critical patent/JPS5958955U/en
Publication of JPS5958955U publication Critical patent/JPS5958955U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１〜４図は、本考案の一実施例の配線構造の断面図で
ある。 １・・・Ｔｉ（厚さ〜１００ＯＡ）、２・・・多結晶シ
リコン（厚さ≧２０００　Ａ）、３・・・酸化膜、４・
・・ＴｉＮ（厚さ〜１０００人）、５・・・Ｔｉ５ｉ２
（厚さ〜２５００λつ、６・・・Ｗ（厚さ〜３５００Ａ
）、７・・・ＴｉＮ（厚さ〜５０〇人）。1 to 4 are cross-sectional views of a wiring structure according to an embodiment of the present invention. 1... Ti (thickness ~ 100 OA), 2... Polycrystalline silicon (thickness ≧ 2000 A), 3... Oxide film, 4...
・・TiN (thickness ~ 1000 people), 5...Ti5i2
(Thickness ~ 2500λ, 6...W (Thickness ~ 3500A
), 7...TiN (thickness ~500 people).

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 遷移金属（Ｔｉ、　Ｍｏ、　Ｗ、　Ｔａ）ならびにその
硅化物（ＴｉＳｉ２．　ＭｏＳｉ２．　ＷＳｉ２．　Ｔ
ａ５ｉ２）を材料とする配線において、配線表面を単原
子層以上のＴｉＮで覆うことを特徴とする半導体素子に
おける配線構造。Transition metals (Ti, Mo, W, Ta) and their silicides (TiSi2. MoSi2. WSi2. T
A wiring structure in a semiconductor device, characterized in that the wiring surface is covered with a monoatomic layer or more of TiN in the wiring made of a5i2).
JP15410082U 1982-10-13 1982-10-13 Wiring structure in semiconductor devices Pending JPS5958955U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15410082U JPS5958955U (en) 1982-10-13 1982-10-13 Wiring structure in semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15410082U JPS5958955U (en) 1982-10-13 1982-10-13 Wiring structure in semiconductor devices

Publications (1)

Publication Number Publication Date
JPS5958955U true JPS5958955U (en) 1984-04-17

Family

ID=30340738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15410082U Pending JPS5958955U (en) 1982-10-13 1982-10-13 Wiring structure in semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5958955U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229848A (en) * 1986-03-29 1987-10-08 Toshiba Corp Semiconductor device
JPS6312132A (en) * 1986-07-03 1988-01-19 Sony Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229848A (en) * 1986-03-29 1987-10-08 Toshiba Corp Semiconductor device
JPS6312132A (en) * 1986-07-03 1988-01-19 Sony Corp Manufacture of semiconductor device

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