JPS5956778A - 半導体位置検出器 - Google Patents

半導体位置検出器

Info

Publication number
JPS5956778A
JPS5956778A JP57166559A JP16655982A JPS5956778A JP S5956778 A JPS5956778 A JP S5956778A JP 57166559 A JP57166559 A JP 57166559A JP 16655982 A JP16655982 A JP 16655982A JP S5956778 A JPS5956778 A JP S5956778A
Authority
JP
Japan
Prior art keywords
resistance layer
semiconductor device
thin film
type
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57166559A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0462187B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Yujiro Naruse
雄二郎 成瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57166559A priority Critical patent/JPS5956778A/ja
Publication of JPS5956778A publication Critical patent/JPS5956778A/ja
Publication of JPH0462187B2 publication Critical patent/JPH0462187B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes

Landscapes

  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP57166559A 1982-09-27 1982-09-27 半導体位置検出器 Granted JPS5956778A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57166559A JPS5956778A (ja) 1982-09-27 1982-09-27 半導体位置検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57166559A JPS5956778A (ja) 1982-09-27 1982-09-27 半導体位置検出器

Publications (2)

Publication Number Publication Date
JPS5956778A true JPS5956778A (ja) 1984-04-02
JPH0462187B2 JPH0462187B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-05

Family

ID=15833502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57166559A Granted JPS5956778A (ja) 1982-09-27 1982-09-27 半導体位置検出器

Country Status (1)

Country Link
JP (1) JPS5956778A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164281A (ja) * 1986-12-25 1988-07-07 Kyocera Corp 位置検出装置
EP0289753A2 (en) 1987-03-16 1988-11-09 Horiba, Ltd. A process for the manufacture of a responsive membrane for use in chlorine ion selective electrode
JPS6476781A (en) * 1987-09-17 1989-03-22 Fuji Electric Co Ltd Two-dimensional light position detecting element
US4961096A (en) * 1987-07-02 1990-10-02 Rikagaku Kenkyusho Semiconductor image position sensitive device with primary and intermediate electrodes
WO1993014376A1 (fr) * 1987-07-02 1993-07-22 Masanori Idesawa Structure d'element semi-conducteur servant a detecter la position d'une image et procede de detection de la position d'une image
US7182693B2 (en) 2002-05-10 2007-02-27 Nec Corporation Target device and light detecting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950579A (ja) * 1982-09-16 1984-03-23 Komatsu Ltd 半導体光位置検出器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950579A (ja) * 1982-09-16 1984-03-23 Komatsu Ltd 半導体光位置検出器

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164281A (ja) * 1986-12-25 1988-07-07 Kyocera Corp 位置検出装置
EP0289753A2 (en) 1987-03-16 1988-11-09 Horiba, Ltd. A process for the manufacture of a responsive membrane for use in chlorine ion selective electrode
US4961096A (en) * 1987-07-02 1990-10-02 Rikagaku Kenkyusho Semiconductor image position sensitive device with primary and intermediate electrodes
WO1993014376A1 (fr) * 1987-07-02 1993-07-22 Masanori Idesawa Structure d'element semi-conducteur servant a detecter la position d'une image et procede de detection de la position d'une image
JPS6476781A (en) * 1987-09-17 1989-03-22 Fuji Electric Co Ltd Two-dimensional light position detecting element
US7182693B2 (en) 2002-05-10 2007-02-27 Nec Corporation Target device and light detecting device

Also Published As

Publication number Publication date
JPH0462187B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-05

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