JPS5954700A - 光通信用yig単結晶の製造方法 - Google Patents
光通信用yig単結晶の製造方法Info
- Publication number
- JPS5954700A JPS5954700A JP57164563A JP16456382A JPS5954700A JP S5954700 A JPS5954700 A JP S5954700A JP 57164563 A JP57164563 A JP 57164563A JP 16456382 A JP16456382 A JP 16456382A JP S5954700 A JPS5954700 A JP S5954700A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- single crystal
- light
- optical communication
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57164563A JPS5954700A (ja) | 1982-09-21 | 1982-09-21 | 光通信用yig単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57164563A JPS5954700A (ja) | 1982-09-21 | 1982-09-21 | 光通信用yig単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5954700A true JPS5954700A (ja) | 1984-03-29 |
| JPS612633B2 JPS612633B2 (OSRAM) | 1986-01-27 |
Family
ID=15795536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57164563A Granted JPS5954700A (ja) | 1982-09-21 | 1982-09-21 | 光通信用yig単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5954700A (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100554183B1 (ko) * | 2002-11-18 | 2006-02-22 | 한국전자통신연구원 | 마이크로파용 yig 자성체 세라믹 조성물 및 그의 제조방법 |
| US7378926B2 (en) * | 2003-08-26 | 2008-05-27 | Advantest Corp. | Single crystalline magnetic garnet and YIG device |
-
1982
- 1982-09-21 JP JP57164563A patent/JPS5954700A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100554183B1 (ko) * | 2002-11-18 | 2006-02-22 | 한국전자통신연구원 | 마이크로파용 yig 자성체 세라믹 조성물 및 그의 제조방법 |
| US7378926B2 (en) * | 2003-08-26 | 2008-05-27 | Advantest Corp. | Single crystalline magnetic garnet and YIG device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS612633B2 (OSRAM) | 1986-01-27 |
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