JPS5954688A - Growth of single crystal - Google Patents
Growth of single crystalInfo
- Publication number
- JPS5954688A JPS5954688A JP16250282A JP16250282A JPS5954688A JP S5954688 A JPS5954688 A JP S5954688A JP 16250282 A JP16250282 A JP 16250282A JP 16250282 A JP16250282 A JP 16250282A JP S5954688 A JPS5954688 A JP S5954688A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- ring
- single crystal
- insulating material
- core tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、フェライトなどの単結晶を育盛ずやだめの単
結晶育成法に関する。ものである。。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for growing a single crystal such as ferrite without growing it. It is something. .
従来例の構成と間、照点
従来単結晶を育成製造する場合には、ブリッジマン法と
称せられる方法が使用されている。このブリッジマン法
に、第１図に示すようにあるｄ当な温度勾配をもった電
気炉３内、で、、溶轡した原料を収容したるつぼ２を相
対的に垂直方向に移動させ１、 １ １ 、
１
徐々にるつぼ２の先端部から固化させ単結晶化させるも
のである。Conventional structure and illumination point Conventionally, when growing and manufacturing a single crystal, a method called the Bridgman method is used. In this Bridgman method, as shown in Fig. 1, a crucible 2 containing melted raw materials is moved relatively vertically in an electric furnace 3 having a certain temperature gradient. 1 1,
1 Gradually solidifies from the tip of the crucible 2 to form a single crystal.
しかしながら７この方法は、原料の入った重いるつぼを
移動させ４．る必要があるため駆動装置が大役；かりに
なる。首たクラック等の発生を防ぐ意味から電気炉申の
温度芥布、も、一般にあまり急峻にできない。そのため
るつぼ内の原料が高温にさらされる部分が大きくなり５
．、同時に高温にさらされる時間も長くなや。そのため
にるつぼ内の原料溶融時に対流が起ｐ１これらが組成偏
析や白金混入などの原因を作、す、出すことになり、±
結晶素拐の歩留りを犬きく外下させるを因となる。However,7 this method does not require moving heavy crucibles containing raw materials4. The drive device plays a major role. In order to prevent the occurrence of neck cracks, etc., the temperature of electric furnaces cannot generally be made too steep. As a result, the portion of the raw material in the crucible that is exposed to high temperatures increases5.
．． At the same time, the time spent exposed to high temperatures is also long. For this reason, convection occurs when the raw materials are melted in the crucible, which causes compositional segregation and platinum contamination.
This causes a drastic drop in the yield of crystal graining.
発明の目的 。Purpose of invention.
本発明は、以上のような従来の問題点を解決し装置の愕
成金簡単にでき、しかも良竺の単結曹を育成できる方法
を提供すること、を目的とするものである。It is an object of the present invention to provide a method that solves the above-mentioned problems of the conventional method, allows the production of equipment easily, and also allows for the cultivation of fine-grain single-coated coal.
発明の構成 。Structure of the invention.
本発明は容量の大きい耐熱保温、材のリングをるりほと
相対０りに垂直方向、に移動させることにより１、耐熱
保温材のリングの、熱容量による保温効果によりるつほ
の一部分の温度を上昇させるようにしたものである。The present invention is capable of reducing the temperature of a part of the heat insulating material by moving a ring made of heat-resistant heat insulating material with a large capacity in a vertical direction relative to the heat insulating material. It was designed to rise.
すなわち本発明は、温度勾配のなたらも・な電気炉を使
用し、高さがる？はの全長の３分９．１から６分の１で
、るつぼの外径より太きくしかもるつぼを内側に入れた
時スλ−ズに移□動できる程度の □内径を有し電気炉
内の炉芯管の内径よシも小さく、かつ炉芯管内に入れた
時ス入−ズに移動できる程度の外径を有−するリングを
耐熱保温材で作成し、これをるつぼの外側にはめ、前記
の温度勾配のなだらかな電気炉内で垂直方向に移動させ
ることにより単結晶を育成するものである。In other words, the present invention uses an electric furnace with a wide temperature gradient, and the height increases. It is between 9.1 and 1/6 of the total length of the crucible, and is thicker than the outside diameter of the crucible, and has an inside diameter that is large enough to move the crucible into the λ-sleeve when the crucible is placed inside. A ring is made of heat-resistant heat insulating material and has a smaller inner diameter than the furnace core tube and an outer diameter that is large enough to move into the melt when placed inside the furnace core tube, and this ring is fitted onto the outside of the crucible. In this method, a single crystal is grown by vertical movement in an electric furnace with a gentle temperature gradient.
実施例の説明 以下に本発明の一実施例番図面を用いて説明す木。Description of examples A tree according to an embodiment of the present invention will be explained below using the drawings.
第２図は、本発明の一実施９１を示ず概略斜視図である
。１は＋ｆｊｊ熱１呆蒜利でできている・ルグで、その
内径がＰｔ−Ｒｈ合金よりなるるつぼ２の外径」：りも
犬きく、またその外径は、電気炉３の炉芯管内径よりも
小さくなっており、炉芯管内を自由に上下に移動するこ
とができるように構成されている。リング１の高さはる
つぼ２の全長の３分の１から６分の１程度が好ましい。FIG. 2 is a schematic perspective view, not showing one embodiment 91 of the present invention. 1 is +fjj heat 1 made of chili powder, and its inner diameter is the outer diameter of crucible 2 made of Pt-Rh alloy.The outer diameter is the core tube of electric furnace 3. It is smaller than the inner diameter and is configured to be able to move freely up and down within the furnace core tube. The height of the ring 1 is preferably about one-third to one-sixth of the total length of the crucible 2.
本発明に用いるに気ｒ３号の温度分布は、第３図のｄの
ように平担な方が望ましい。It is preferable that the temperature distribution of the air No. 3 used in the present invention be flat as shown in d in FIG.
お稿よ２ｔ’［’ｔ＝’＝’ｔＭＯおいい布。平担７ケ
。Draft 2t'['t='='tMO hey cloth. 7 flat-bearers.
設置し、リング１をるつは２の中央付近（てもってくる
と第３図のｂのような温度の突出部分を生じる。リング
１がない場合はＣのように平和になっている。リング１
を上下に移動することによりこの突出部分すを移動させ
ることができるので、リング１をるつぼ２の先端から徐
々に溶融し上端へ移動させることにより先端より固化し
単結晶を育成することができ名。When the ring 1 is placed near the center of the ring 2 (b) in Figure 3, a protruding area of temperature will be generated.If there is no ring 1, the temperature will be peaceful as shown in C. 1
This protruding part can be moved by moving the ring up and down, so the ring 1 can be gradually melted from the tip of the crucible 2, and by moving it to the top, it can solidify from the tip and grow a single crystal. .
以」二のように本実施例□によれば、熱容量の大きい耐
竺保１矛を！珀しその輻射熱を利用するグこめ電気炉の
結晶育成温度の設定値を従来より低くすることがＦきる
。なセ第２図のｄは、一般にブリッジマン倖に稗われて
いる電気炉の温度分布であるが、この分布における最高
点の需要とリング１を入れることにより」二昇する温度
の最高点は同じぐらいであるので、電気炉の温度は、本
発明の方が従来よりこのリング１を入れることにＪ：り
上昇する分だけ低くすることができる。そのため電気炉
内の発熱体に流す電流も少くてすみ、廃賦体の寿命も延
びるため非常に経済的となる。またリング１を入れた部
分の温度分布の勾配が急峻となるため、従来に比べるつ
ぼ２の高温中にさらされる部分が少くな暮。そのためる
つぼ２内の゛原料溶融域り、組成偏析や白金混入ｉどに
よる
歩留りの低下を極力防ぐ□ことができる計さらに、従来
のブリッジマン法では、原料を充填した重いるつぼ自体
を上下に移動してい産のに対し、本発明では比較的□軽
い耐熱１葆温材アリング１を上下に移動するため上干に
移動させ２時に必要とする１駆動装置が簡単ですむ。According to this example □, as shown in ``2'', one resistant sword with a large heat capacity is produced! It is possible to set the crystal growth temperature of the electric furnace, which utilizes the radiant heat of sinter, lower than before. d in Figure 2 is the temperature distribution of an electric furnace, which is generally referred to by Bridgman, but by adding the demand at the highest point in this distribution and ring 1, the highest point at which the temperature rises is Since they are about the same, the temperature of the electric furnace can be lowered in the present invention by the amount of the increase in temperature due to the insertion of the ring 1 than in the conventional case. Therefore, less current is required to flow through the heating element in the electric furnace, and the life of the waste vehicle is extended, making it extremely economical. Also, because the gradient of the temperature distribution in the part where the ring 1 is inserted is steeper, the part of the pot 2 that is exposed to high temperatures is smaller than in the past. Therefore, it is possible to prevent as much as possible the decrease in yield due to the raw material melting zone, compositional segregation, platinum contamination, etc. in the crucible 2.Furthermore, in the conventional Bridgman method, the heavy crucible itself filled with raw materials is moved up and down. In contrast to the conventional method, the present invention requires only one driving device, which is relatively light and heat resistant, and requires only one driving device to move the heating material ring 1 up and down.
第３図は本発明の他の実施例を示ず搬路構成図である。FIG. 3 is a conveyance path configuration diagram showing another embodiment of the present invention.
本実施例の場合は、リング１を□固焼して、るつぼ２を
下げることにより同機の効果を樽ようとするものである
。この実施例におりでて、電気′炉の温度を従来のブリ
ッジマン法より低くするととができる。そめ結果、前記
の実施例同様、電気炉の発熱体の寿命が延び、また得ら
れた単結晶の組成偏析や白金混入などによる歩留りの低
下を少くすることができる。In the case of this embodiment, the ring 1 is hard-fired and the crucible 2 is lowered to maximize the effect of the machine. This embodiment allows the temperature of the electric furnace to be lower than that of the conventional Bridgman method. As a result, as in the embodiments described above, the life of the heating element of the electric furnace is extended, and the decrease in yield due to compositional segregation or platinum contamination of the obtained single crystal can be reduced.
発明の効□果 □
以”上雇明したよう□に本発明は、平担な温度分布を有
する電気炉内にるつぼを配置するとともに上記るつぼの
外側に熱容量の大きい１Ｉｌｉｊ熱保濡拐でできたリン
グを配置し、両者を相対的に上下方向に移動可能に構成
することにより部分的に原料を溶融□、固化し□単結晶
を育成するもので、本発明の方法を用いることにより電
黴炉の結晶育成温度の設定値を低くすることがで□き暮
ため、電気炉内の発熱体の寿命を延針ずことができるば
かりでなく、エネルギー節約にもなり、しかもるつぼの
高温中に□さらされる部分が少いため、組成偏析や白金
Ｗ人が少くな）、良質の単結晶を得ることができる０□ Effects of the Invention □ As stated above □, the present invention provides a method in which a crucible is disposed in an electric furnace having an even temperature distribution, and a 1Ilij thermal insulation layer with a large heat capacity is placed outside the crucible. By arranging rings that can be moved vertically relative to each other, the raw material is partially melted and solidified to grow a single crystal. By using the method of the present invention, electric mold can be Since it is possible to lower the set value of the crystal growth temperature of the furnace, it is possible to not only extend the life of the heating element in the electric furnace, but also save energy. □Because there are few exposed parts, there is less compositional segregation and less platinum content), making it possible to obtain high-quality single crystals.
第１図は、従来のブリッジマン法を説明するための概略
断面図、第２図は本発明の一実施例を示す概略斜視図、
第３図は電気炉内の温度分布を示す図、第４図は本発明
の他の実施例を示す概略断面図である。
１・・・・・・リング、２・・・・・・るつは、３・・
・・・・電気炉。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図 縮
第３図
１２図
第４図FIG. 1 is a schematic sectional view for explaining the conventional Bridgman method, FIG. 2 is a schematic perspective view showing an embodiment of the present invention,
FIG. 3 is a diagram showing the temperature distribution in the electric furnace, and FIG. 4 is a schematic sectional view showing another embodiment of the present invention. 1...Ring, 2...Rutsu, 3...
····Electric furnace. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure Reduced Figure 3 Figure 12 Figure 4
Claims (1)
全保温材、上記耐熱保温材と上記るつほを相対的に上下
に移動させることを特徴とする単結晶や育成方法。A method for growing a single crystal, characterized in that a ring-shaped Iil'I heat insulating material is placed between a crucible and a furnace core tube, and the heat resistant heat insulating material and the crucible are moved vertically relative to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16250282A JPS5954688A (en) | 1982-09-17 | 1982-09-17 | Growth of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16250282A JPS5954688A (en) | 1982-09-17 | 1982-09-17 | Growth of single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5954688A true JPS5954688A (en) | 1984-03-29 |
Family
ID=15755832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16250282A Pending JPS5954688A (en) | 1982-09-17 | 1982-09-17 | Growth of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5954688A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011173A (en) * | 2009-09-08 | 2011-04-13 | 国立大学法人信州大学 | Equipment for growing sapphire single crystal |
-
1982
- 1982-09-17 JP JP16250282A patent/JPS5954688A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011173A (en) * | 2009-09-08 | 2011-04-13 | 国立大学法人信州大学 | Equipment for growing sapphire single crystal |
| CN102011173B (en) * | 2009-09-08 | 2015-07-08 | 国立大学法人信州大学 | Equipment for growing sapphire single crystal |
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