JPS5953680A - Sputtering device - Google Patents

Abstract

PURPOSE:To improve using efficiency with extremely compact constitution, by placing slender targets of a rectangular strip shape so as to face each other to form opposed targets, disposing transfer rolls on both sides of the long side theeof and forming a film while transferring a polymer film. CONSTITUTION:A titled device is constituted of two sets of opposed targets T1, T2 consisting of two sheets each of rectangular striplike targets TA1, TB1, TA2, TB2 of the same shape placed to face each other at a prescribed space, magnets 301-304 which are provided behind said targets and forming magnetic field vertical to the targets, supporting rolls 101-103, 15-154 which are provided so as to face each other spacially on both sides of the long side of the targets T1, T2 and revolve at a prescribed speed and substrate transfer means 61, 62 which transfer a film 20 in tight contact with the supporting rolls so as to face each other spacially.

Description

[Detailed description of the invention]

The present invention enables target suba-notaring in a vacuum chamber.

[
Regarding the well-known sputtering apparatus that forms a thin film with a composition corresponding to the target on a substrate, more specifically, it relates to a sputtering apparatus suitable for Otsuki production of thin films.In recent years, research and development have been active. For ultra-LSIs, optical communication devices (residual oil devices, ultra-high density recording elements, etc.), films of high melting point or active materials that cannot be fabricated by empty evaporation methods are used for their compositions and properties. There is a strong demand for controlled fabrication, and the Sunotsuta method has been reviewed as a technology that allows film gradual deposition on most substrates, regardless of the material. 11 studies have been carried out.The direction is toward high speed and low temperature, and there are many proposals such as mag-outron counters. ℃Zu1-High speed, temperature of °people・ku・
Not only can it be used for magnetic materials, but it can also be applied to magnetic materials.
558-p559). This facing target blade device is constructed as shown in FIG. In other words, the substrate and target are placed facing each other in a conventional vacuum chamber.
4% Super Spat Ordnance, 7rs, Soldier 4F-1, Wl
TA and Tn3 are arranged so that the sputtered surfaces TAq and TBq are facing parallel to each other with a distance between them.
Substrate 20+i, target TA, TB i1(I)
To the board halter 21 installed on the side, it is placed on the board! f Tsul□
'rA, TBO) The spouse 1 faces the space 1 in the 11 direction. Then, the sputtering surface TA! ! ,
It is designed to generate a magnetic field I (in the direction perpendicular to the TBs. In the figure, 11A71113 is a target polder made of iron, 12A is a nord for protection. Therefore, the exhaust system (not shown) The inside of the vacuum chamber 10 was evacuated through the vacuum chamber 10 through the gas introduction system 40 (not shown), and a spackle gas such as argon was introduced through a gas introduction system (not shown) by 1 tll, and sputtering was performed using a sputtering power supply 60 consisting of a DC power supply as shown in the figure.・-Ruby 12A, 12B Therefore, vacuum 4?η device 10] To the lift (ground), Tagera I, TA,
Use TB as a cathode and supply power to the filter 3.
0 causes the magnetism described in iil to be generated. By a), spucking is performed, and a thin film having a composition corresponding to the target i'A, 'I'+3 is formed on the substrate 21). At this time, the sputtering surface '1. 'As. Since a magnetic field is applied perpendicular to TBS, high-energy particles are confined in the space between the opposing targets TΔ, 'rn, and the ionization of spantanonos is promoted here, resulting in a high spantanonotayu* degree. This makes it possible to form a film with a raised bed. The substrate 20 does not face the target as in conventional sputtering equipment, but instead is placed in a target position.
Since it is placed on the side of 'B, there is almost no collision of ions, boxes, or children with high energy keys onto the substrate 20 (4), and the thermal radiation from the targets TA and TB is also small, which increases the substrate temperature. TA. Since it is applied in the perpendicular direction of Tn, it is better to form a film at a low temperature.
A. Even if a magnetic material is used for 'I'13, the magnetic field will work effectively and high-speed film formation will be possible.
Further improvements in salivation performance are desired, and Fumi is anxious to improve overall efficiency. −). In addition, in the conventional 71-direction target 2/p/p device described above, when the size is increased in order to improve salivation properties, the coil also becomes larger and the equipment cost is reduced! 1, and in terms of efficiency, there is a problem with the utilization rate of spuck particles for thin film formation (B-).
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rri and cow 41'I. Effective J1 is also a compact person with good eyes.
This service provides direct access to sputtering equipment.
That is, the present invention uses a sputtering apparatus 6 in which a thin film having a composition corresponding to Lr = 41h (Lr = 41h (Turk / 1) is applied to the substrate to form a thin film having a composition corresponding to 2 to 11 Turk / l□. In the first step, the 1111 Turks 7 are placed in opposing Targuas facing each other with at least one layer of space between them.
) and /c] to form a magnetic field in the deflection direction between the targets in the direction of the direction 71/J A magnetic field generating means is installed behind each target of the facing direction, [)1
Transfer the board in the direction of force perpendicular to the target of the opposing target while facing the space between the opposing targets. It is characterized by the fact that it has been provided. Ariyato describes the details of the present invention based on examples.

[This will be explained using drawings. Figure 2 shows the example of this light: 'J:L approx. 11111 i1
In the i+ diagram, there are 4 ha. In the figure, 10 is a vacuum chamber, and the exhaust port 40 is connected to the 11i1 L-C exhaust system in the same manner as the 111!81st conventional device. :] It is connected to the waste introduction system separately from 50,
It is equipped with 5 parts so that it can be evacuated or supplied with a full exhaust gas, etc., if necessary. 'l'i, T2 are the same targetera (tai) in the shape of nine elongated books facing each other with a predetermined space in between. TBI, TA, 2. Two sets of opposing target holders 111, 112, 113, and 114, each consisting of TB2, are fixed to the side wall of the oil tank 100, and the target holders 111, 112, 113, and 114, as shown in the figure, (sides perpendicular to il (a) in the 1r1 direction) are mutually p (14 opposite sides in hiratei 2F [
1 is installed in parallel with Me. With rollers, opposing cukea 1-'l'l,
1.1 is arranged between the long side of T2 and the axis <i on both sides 1111 between the opposing h'-. 1).Then, the guide rollers 151, +52, +
5: (The plate 20 is moved by the transfer roller 1 by the film material feeding means consisting of the feeding device F 161 and the winding device A and 62.)
01, 102. The sputtering device is transferred in close contact with the It13 while facing each of the opposing spaces. Therefore, a sputtering device with a compact 1.C configuration and high production efficiency can be realized as a whole. Note that the transfer roller 1.01, 102, 103], I8
The plate 20 is conveyed at a uniform speed. 1.5, I, send 11
・--No. 101, + 02, 1 Fl 3 Driven by a control device vi, (shown in the figure), which can adjust the circumferential speed between 101, +02, and 1 Fl3, and a control device it? Finally, transfer a = la +
o Drive 1 (JH) at a constant circumferential speed and guide roller 151.
．． A tension detector (1 shown in the figure) is provided to detect the tension of the substrate 20 in the middle of the IF+2, and the transfer roller 103 is adjusted so that the tension is constant. The speed of is ゛(transfer 1' + - - 51-4 knots like 102) 3, transfer r no]
(The surface of l 1 , 102 , I O3 is flat 113
It is good that it has excellent properties and adhesion to the substrate 20 +1
．． stomach. In addition, it is preferable that the surface temperature of N1, 102, and 103 can be changed from room temperature to several hundred degrees Celsius.The surface temperature can be adjusted by using a heating medium such as licorice oil.
This can be done by circulating it inside the l-ra. The target holder 111, 112, 113, 114 has a wall structure made of non-magnetic material, and has a cooling pipe (not shown).
Cooling with cooling water etc. through 71'' and without. In addition, the "magnetic field generation" stage shown in Fig. 1 σ) is replaced by file 30 with Kuget TAI, i'IN, TA2,
On the back of R32, the opposing shift target 'rΔ] and T old,
The four reefs of 1゛Δ2 and TB2 are the same force plane, and the lines of magnetic force are the targets TAI, TBI, i'A2, i'
H21tC Vertical and symmetrical model I
I+, 112, 113. Placed in I+4 ffl L is permanent
Who is this? jk kyu 11n stone:l OI, 30
2, 303. 304 is as shown in Figure 2, respectively.
Topol l' II+, +12. I]:(, +14(7
, Jt'f1tl11 (only place it in ;), so
The magnetic V?
The i50 is formed by JL-IN. As shown in the figure, permanent magnets 30], i(tl 2.303°304)
1 direction side is jl, 1 side side ((If the tip is shaped like a cutting edge, the wall of the magnetic field is limited to the circumference Hli: ', the erosion of the target = t] is equalized) 3 , In addition, the shield plates 121, 122, 123° and 124 are the same as before (
Target holder I11゜112.113,11
Around 4 as shown in the diagram (distribution j-tear-k). ; The electric power generated by the personnel was calculated as described above.
From each frost, 0 ha (l'lii not shown) as well as t,
/-1゛ (ζ′≧tank 10 and nuru) held in Sumi Cry
Paring 121゜122.123, 124 as anode 2
'C1 respectively Me and 1 directions) TI, T2
If r is supplied separately, t, J will be supplied to 5 separately.
4 empty (iil 1 (after evacuating the inside of 1, introduce the spatter scum), source or laser spatter 111. ,302゜3(1
3,304, a wall of magnetic field is formed around the periphery of the facing targets TI and T2, so high energy '+lf' and electrons are confined in each II direction space, promoting ionization of sputter residue74 and increasing the speed. In addition, since the substrate 20 is located on the side of the opposing targets T+ and T2, low-temperature film formation is possible. 1゛2 is the same as the conventional 1-Utsu 1 set in Figure 1.
Similar to Notabe εi, 1', 10 acts, jl, and speed 1-
1 low temperature B11\formation, 5X received l[) property, 27? In addition to having a compact configuration, a magnetic field wall is constructed only around the target area, so
Compared to Targera I, which has a shell on the entire surface and forms a magnetic field,
1. The sputtering of the target becomes uniform over the entire surface, and the magnetic field can be easily formed, making it possible to widen the target spacing.1. There is a j. By the way, when the substrate 20 is transferred and formed into a tile 4),
Particles sputtered by the opposing targets 'l'l, i'2 are sequentially deposited on the substrate 20'2 to form a). f/(So, each opposing target 'IJ, T2 is composed of the same system (one substance)), (+Y-
America's facing target sputtering equipment has a film formation rate of 4 x 1, which is unbelievably high.
1-, the sputtered particles are facing toward each other
, T20 image g) Since it is used for film formation in 7i*,
The efficiency of the target for 1 and 4 of the conventional device 7) is less than 1 (both are 2 times).Furthermore, as described in 111, the target i'l, T2 is elongated and shaped (III shape), and the substrate 20 force'- ,1@
, sent 1111 blasphemy I+] broadly configured, lb
Therefore, the aforementioned usage efficiency of the target material - i.e., the percentage of sputtered target material used for film formation can be calculated as follows. This usage efficiency is based on the opposing hood I”l, 1f1 on the substrate 20 of T2.
1) Since the riJ ratio of the long side and the short side is
If the l/l ratio is 4:1 or more, λ1 is set to % i; A shield plate can be provided on the short side a+ to capture the sputtered particles.In other words, except for the sputtered particles flying onto the substrate 20 on which the film is to be formed, the opposing target holder Inserted in the evening part of 111.112.113.114
capture Therefore, sputtered particles will not adhere to the inner wall of the sputtering tank 10, so the empty tank can always be kept clean. , it is possible to easily clean the film at the time of film formation, and to increase the raw part (1). Also, as described in 1), multilayer films are sequentially formed on the substrate 20. For example, 11-i open J
IG 54 51804, Senkai Show 57=] 00 L
] 27-15, etc., the disclosure of the drop 1/↓ (put one mind in the notice of the production of the second recording medium, permalloy on the target l-'l"l on the opposite Kuget 'l'2 Cohar 1-rim alloy material 1-〈r is used, 1- film is prepared while transporting the substrate 20, ie, a polymer film. S film, cobalt

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J no vertical? The desired vertical moi (
Can you create continuous recording media? By the way, in a perpendicular magnetic recording medium, the surface flatness of the substrate 20 is 7 [(It is important that when the substrate 20 is transferred, scratches and irregularities that impair the surface flatness of the substrate 20 occur 4). , recording medium and 1. value will be halved. However, according to this configuration, the substrate 20 is moved by the transfer rollers 101, 102, 1
03. ] 041L can be transferred without slipping while strictly adjusting the transfer speed, and can be realized by transferring a two-layer film on the substrate 20. [5] Therefore, the probability of occurrence of factors that impair the surface-to-surface flatness of the substrate 20 can be reduced by 6jχ. Hereinafter, the present invention will be explained based on examples.
Although the present invention is limited to these examples (') -Q i
ll, that's a bummer. A suitable example for creating a two-layer film is one in which two sets of opposing cugets are arranged side by side in the horizontal direction. is optional. 't (many, f:F1., example +14
When setting up opposing targets for hn, place two sets side by side, as in the example σ, and place them in the upper and lower 2I positions. A multi-stage arrangement is also possible. In this way, the installation space in the row direction can be saved to ``1'', and in the case of 4 pairs of opposing coo-counts σ), rjN
By arranging the θ and 1'h targets, the transfer o-ra can be reduced to a large l], and the overall configuration can be made. Figure 3 shows the target. It is a side sectional view from the side, and IIE is the front j14 direct father coordinate arrangement, as shown, the opposing target 1'~'r4 (1)
The center leg of the short side r111 or 1 [ko, intersection +'a each side of the axis -
)2j(ru)yo5 arrangementcノ)Thus, 1-)i]. According to the arrangement 'ly in the figure, when the substrate 20 is transferred in the direction shown by the arrow of the actual bond along the path shown by the actual gland (and when the film is formed, the substrate 20. + both sides i + 'i -3
It is possible to form multilayer films of up to 150 mm and 100 mm. In addition, by configuring all Targetera)- with the same composition, 1.
A middle layer can be formed in the upper layer a) 7. Some points 1i4+ in the figure! By transferring it to the dotted line arrow force plane along the path shown in , it can be formed on one side of the single-layer substrate 20 with the cross-cutting unit 111. Also, the one C in FIG. (Target T131, TB3:!, T
B: Well, 1'H4 is provided in independent target holders 112, 114, 116, and 118 for easy control, but these targets can be tracked together.
Advantages of having a new construction/J- There are. The other components in FIG. 3 are the same as in FIG. 2, and their explanation will be omitted. Also, the symbols in Figure 3 are the same as in Figure 2. Also, the edge protrusion device i of the board 20! i
, the one in which the winding device is installed at the same rate as the target is shown, but there is a K7, unloading chamber, and spuck chamber. In this case, the spack room can be used as needed.・A) Therefore, production 1 I 1゛ white clay can be produced in period 4!j). In the present invention, the forces 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 1 and 2 and 1 and 2 and 3 are, respectively, created by facing each other.
With (, 1,000 long sides, arrange 1 + - 1 on both sides, (multi I), r, and place them in close contact with the board and 7j I]!
Membrane formation while transporting cylindrical molecules - Iro, 1,'
), it has a very compact configuration.
- High usage efficiency and damage to old boards -1.
A clumsy spackle device has been realized. In this way, the present invention (
i, Spack equipment, especially the facing Kuge・)l Raw meat of one type Spack equipment 1't, has a large contribution/↓ to improving sex (d,
τIa7! , ]. 4 Fig. 1 f1' yr〕J\i, 1 theory, Fig. 1 shows the configuration of the device R〕■, -]' 1ifa IO
2nd figure, 2nd chapter 1: Ukori 1 no Mi Jii11≦Li's irori growth: -94 Kaji 111ij iguchi 11 nno [face 1 each, 31p
1 is a schematic representation of the H71 series of other embodiments of the present invention.
ill I;) iriri diagram. 10: Military tank, 20: Hard 1"-A) shi. 1'A~i'B4: Kugera 1-2101~IO4
:), JJ send Rono. ] IA, ] 113. ] 1 ] ~ 118: Kugetstorku. 12A, 12B, 121 to 128 two wheels (link. 151 to 162: Guide rollers, 301 to 3 (+8: Magnetic a'F roasting 11 people Teijin Co., Ltd. I1 ″″7-

Claims (1)

[Claims] A sputtering device that sputters a long film while transporting it in an empty tank and sputters a target film to form a thin film with a composition corresponding to the target on the film. g, 19
Set up behind a pair of opposing Kuguts and one cough target (
A magnetic field generating means for forming a magnetic field in a direction perpendicular to the targets in a space between the opposing targets, and magnetic field generating means provided on both long sides of the opposing targets to face the space.
A sputtering apparatus comprising: a support roller which rotates the front M+j filter at a constant speed; and substrate transfer means which transfers the front M+j filter while bringing it into close contact with the core support roller and facing the space. 2. A number of pairs of opposing targeters 1- are arranged in a row so that their long sides are in the it'- row and the space between them faces each other, and the front 6' between the opposing targets is shi support + H'I'l rJ-ra special vfj blade machined with one common roller
Sputtering equipment listed in the list. 3. The spuck device according to item 2, in which II is arranged in multiple stages with several pairs of opposing cugets arranged in parallel in rows. 'jj'l jFl, 'i Arrange the opposing target so that its ke() side 1till (!If cut 1fii O) center line is on each side of the i1 parent coordinate, and each sound 1till of the orthogonal coordinate. 81. The spuck device according to claim 81, wherein a common support 1 puller is provided for each opposing target that is in contact with the target. The sputtering apparatus Lt according to claim 9(1), item 4, t5, provided on a common target holder.