JPS5951360A - Rotational speed detector - Google Patents

Rotational speed detector

Info

Publication number
JPS5951360A
JPS5951360A JP16274682A JP16274682A JPS5951360A JP S5951360 A JPS5951360 A JP S5951360A JP 16274682 A JP16274682 A JP 16274682A JP 16274682 A JP16274682 A JP 16274682A JP S5951360 A JPS5951360 A JP S5951360A
Authority
JP
Japan
Prior art keywords
transistor
semiconductor light
conduction
light
degree
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16274682A
Other languages
Japanese (ja)
Inventor
Mikio Muramatsu
村松 幹夫
Toru Mizuno
徹 水野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP16274682A priority Critical patent/JPS5951360A/en
Publication of JPS5951360A publication Critical patent/JPS5951360A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P3/00Measuring linear or angular speed; Measuring differences of linear or angular speeds
    • G01P3/42Devices characterised by the use of electric or magnetic means
    • G01P3/44Devices characterised by the use of electric or magnetic means for measuring angular speed
    • G01P3/48Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage
    • G01P3/481Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage of pulse signals
    • G01P3/486Devices characterised by the use of electric or magnetic means for measuring angular speed by measuring frequency of generated current or voltage of pulse signals delivered by photo-electric detectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Linear Or Angular Velocity Measurement And Their Indicating Devices (AREA)
  • Optical Transform (AREA)

Abstract

PURPOSE:To prevent erroneous detection of rotational speed due to electrical noises during the stoppage of a rotor by making the photoelectric conversin action of a semiconductor light emitting element function as positive feedback action with respect to a semiconductor light receiving element. CONSTITUTION:A signal processing circuit 30 is equippd with resistances 41 and 42 connected in series to an LED32, a transistor 43 Darlington connected to a photo transistor 33, a switching transistor 46 and the like. One end of the resistance 42 is connected to the cathode of the LED32 and the emitter of the transistors 33 and 43 while the other end thereof connected to the ground through a resistance 44. In response to photoelectric conversion action of the transistor 33 accompanied by reception of light from the LED32, the conduction level of the transistor 46 is controlled through the resistances 42 and 44 to effect a positive feedback of forward current of the LED32. The transistor 33 in any of the action area and the interruption area responds to the corrsponding area free from electrical noises when rotor is stopped thereby preventing erroneous detection of rotational speed due to electrical noises during the stoppage of the rotor.

Description

【発明の詳細な説明】 本発明は、回転速度検出装置に係り、特に半導体発光素
子と半導体受光素子とを備えて、これら画素子の光電変
換作用により回転部材の回転状態を検出するとともにこ
の検出結果を当該回転部材の回転速度に対応する出力信
号として発生するようにした回転速度検出装置に関する
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a rotational speed detection device, and more particularly, to a rotational speed detection device that includes a semiconductor light emitting element and a semiconductor light receiving element, and detects the rotational state of a rotating member by the photoelectric conversion action of these pixel elements. The present invention relates to a rotational speed detection device that generates a result as an output signal corresponding to the rotational speed of the rotating member.

従来、この種の回転速度検出装置としては、例えば、回
転部材に連動して回転するように連結される一連のスリ
ットを外周縁部に沿って穿設してなる円板と、この円板
の外周縁部に対向するように配設されて電源からの給電
により導通したとき前記円板の外周縁部に向けて発光す
る発光ダイオードと、前記円板の外周縁部を介して前記
発光ダイオードに対向するように配置されて前記回転部
材の回転状態に応じて前記発光ダイオードからの光を前
記円板の各スリットを通して受光することにより導通し
たときこれを受光信号として検出するホトトランジスタ
と、このホトトランジスタからの受光信号に応答してこ
れを前記回転部材の回転速度に対応する出力信号とし発
生する信号処理回路とによって構成したものがある。
Conventionally, this type of rotational speed detection device includes, for example, a disc formed by a series of slits formed along the outer peripheral edge of the disc, which are connected to rotate in conjunction with a rotating member; a light emitting diode disposed to face the outer peripheral edge and emitting light toward the outer peripheral edge of the disk when electrically connected by power supply from a power source; a phototransistor that is arranged to face each other and receives light from the light emitting diode through each slit of the disk according to the rotational state of the rotating member, and detects this as a light reception signal when electrical conduction occurs; Some devices include a signal processing circuit that responds to a light reception signal from a transistor and generates an output signal corresponding to the rotational speed of the rotating member.

ところで、このような回転速度検出装置においては、上
述したホトトランジスタが、前記円板の回転に伴ない、
その動作領域を遮断領域から飽和領域へ(或いは飽和領
域から遮断領域へ)変化させることにより前記受光信号
のレベルを互いに異なった第ルベルから第2レベル(或
いidM2レベルから第ルベル)に変化させることを利
用して前記信号処理回路から」−述した出力信号として
発生させるようにしているのであるが、例えば、前記回
転部材が停止状態にあるとき、前記円板の前記発光ダイ
オードに対する相対的な回転位置関係によっては、前記
ホ))ランジスタがその受光量の不足に基き能動領域に
て動作し前記受光信号のレベルを前記第1と第2のレベ
ルの中間レベルに維持してしまうという現象が生じる。
By the way, in such a rotational speed detection device, the above-mentioned phototransistor, as the disk rotates,
By changing the operating region from the cutoff region to the saturation region (or from the saturation region to the cutoff region), the level of the received light signal is changed from a mutually different first level to a second level (or from the idM2 level to the second level). This fact is utilized to generate the above-mentioned output signal from the signal processing circuit. For example, when the rotating member is in a stopped state, the relative relationship between the disk and the light emitting diode is Depending on the rotational positional relationship, there may be a phenomenon in which the transistor e)) operates in the active region due to an insufficient amount of light received and maintains the level of the light reception signal at an intermediate level between the first and second levels. arise.

従って、かかる場合に、例えば、前記円板の機械的振動
等に起因する電気的ノイズが前記受光信号に混入すると
、この受光信号のレベルが上述した中間レベルから前記
第1又は第2のレベルに変動し、その結果前記信号処理
回路からの出力信号が、前記回転部材の回転速度が零で
あるにもかかわらず、これとは異なった回転速度に対応
するものとして誤丑って生じるという不具合があった。
Therefore, in such a case, if electrical noise caused by, for example, mechanical vibration of the disc is mixed into the received light signal, the level of the received light signal will change from the above-mentioned intermediate level to the first or second level. As a result, the output signal from the signal processing circuit is erroneously generated as corresponding to a different rotational speed even though the rotational speed of the rotating member is zero. there were.

本発明はこのようなことに対処してなされたもので、そ
の目的とするところは、半導体発光素子と半導体受光素
子の各光電変換作用を利用して回転部材の回転速度を検
出するにあたり、前記半導体発光素子の光電変換作用を
前記半導体受光素子に対し正帰還作用として機能させる
ようにしだ回転速度検出装置を提供することにある。
The present invention has been made in response to the above-mentioned problems, and its purpose is to detect the rotational speed of a rotating member using the photoelectric conversion effects of a semiconductor light emitting element and a semiconductor light receiving element. It is an object of the present invention to provide a rotational speed detection device in which the photoelectric conversion action of a semiconductor light emitting element functions as a positive feedback action to the semiconductor light receiving element.

以下、本発明の一実施例を図面により説明すると、第1
図及び第2図において、符号10は、車両用内燃機関の
出力軸等の回転部材を示し、また両符号20及び60は
、それぞれ、円板及びホトインタラプタを示している。
Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
In the figures and FIG. 2, numeral 10 indicates a rotating member such as an output shaft of a vehicle internal combustion engine, and numerals 20 and 60 indicate a disk and a photointerrupter, respectively.

円板20は、その中央部にて回転部材10に一体的に軸
支されており、この円板20の外周縁部には、各一連の
スリット21、・・・、21及び突起部22.・・・、
22が交互に等間隔にて形成されている。ホトインタラ
プタ60は、円板20の近傍にて適宜な静止構造体の一
部に固着したケーシング61を備えており、このケーシ
ング31に所定間隔付与して設けた一対の突出部31 
a、3i b間には、円板20の外周縁部が介装されて
いる。また、ケーシング61の突出部31a内には、発
光ダイオード62がその導通によりこの導通度合に応じ
て順方向電流を生じるとともに円板20の外周縁部に向
けて前記順方向電流に応じた量にて発光するように設け
られており、一方ケーシング31の突出部3Ib内には
、ホトトランジスタ63が、円板20のスリット21を
介して発光ダイオード32から受光して導通したときと
の導通度合に応じて受光電流を生じるように設けられて
いる。
The disk 20 is integrally supported pivotally by the rotating member 10 at its center, and a series of slits 21, . . . , 21 and projections 22 . ...,
22 are formed alternately at equal intervals. The photointerrupter 60 includes a casing 61 fixed to a part of a suitable stationary structure near the disk 20, and a pair of protrusions 31 provided on the casing 31 at a predetermined distance.
The outer peripheral edge of the disc 20 is interposed between a, 3i and b. Further, within the protruding portion 31a of the casing 61, a light emitting diode 62 generates a forward current according to the degree of conduction due to its conduction, and an amount corresponding to the forward current toward the outer peripheral edge of the disk 20. On the other hand, in the protruding portion 3Ib of the casing 31, a phototransistor 63 is provided to receive light from the light emitting diode 32 through the slit 21 of the disk 20 and to conduct to the same degree as when it is electrically conductive. The light-receiving current is generated accordingly.

信号処理回路40は、第6図に示すごとく、発光ダイオ
ード62に直列接続した抵抗41.42と、ホトトラン
ジスタ36にダーリントン接続したトランジスタ46を
備えており、抵抗41は、直流電源V1)の正側端子及
び発光ダイオード32のアノード間に接続されて、直流
電源VDからの給電電流を、発光ダイオード62におい
て順方向電流を生じさせるに必要な値に制限して当該発
光ダイオード62に付与する。抵抗42は、その一端に
て、発光ダイオード62のカソード、ホトトランジスタ
36のエミッタ及びトランジスタ46のエミッタに接続
されており、この抵抗42の他端は抵抗44を介して接
地されている。このことは、両抵抗42.44の抵抗値
引とホ))ランジスタ33の導通度合に応じた内部抵抗
値との並列合成抵抗値が、ホトトランジスタ66の内部
抵抗値の増大(又は減少)に伴って増大(又は減少)し
て発光ダイオード62の導通度合を減少(又は増大)さ
せることを意味する。なお、直流電源VDはその負側端
子にて接地されている。
As shown in FIG. 6, the signal processing circuit 40 includes resistors 41 and 42 connected in series to a light emitting diode 62, and a transistor 46 connected to a phototransistor 36 in Darlington. It is connected between the side terminal and the anode of the light emitting diode 32, and applies the power supply current from the DC power supply VD to the light emitting diode 62 while limiting it to a value necessary to generate a forward current in the light emitting diode 62. The resistor 42 has one end connected to the cathode of the light emitting diode 62, the emitter of the phototransistor 36, and the emitter of the transistor 46, and the other end of the resistor 42 is grounded via the resistor 44. This means that the parallel combined resistance value of the resistance reduction of both resistors 42 and 44 and the internal resistance value corresponding to the degree of conduction of the transistor 33 increases (or decreases) the internal resistance value of the phototransistor 66. This means that the degree of conduction of the light emitting diode 62 is decreased (or increased) by increasing (or decreasing) accordingly. Note that the DC power supply VD is grounded at its negative terminal.

しかして、抵抗42は、ホI−)ランジスタロ3が非導
通のとき(即ち、その動作領域が遮断領域にあるとき)
、発光ダイオード32からの順方向電流を受けて、抵抗
44との協働により、この抵抗44との共通端にてトラ
ンジスタ46を導通させるに必要なバイアス電圧を発生
する。また、抵抗42は、ホトトランジスタ66が能動
領域にて動作す゛るとき、とのホトトランジスタ66の
導通度合に応じて前記順方向電流をホI−)ランジスタ
33に受光電流として分流せしめ、−ホトトランジスタ
33が飽和領域にて動作するとき、前記受光電流の殆ん
どをホトトランジスタ36に受光電流として流入させる
とともに、前記バイアス電圧を、トランジスタ26を非
導通にするに必要な値に低下させる。なお、トランジス
タ45は、ホトトランジスタ66の動作状態に応じこの
動作状態に対応した動作状態となる。
Therefore, the resistor 42 is
, receives the forward current from the light emitting diode 32 and, in cooperation with the resistor 44, generates the bias voltage necessary to conduct the transistor 46 at its common terminal with the resistor 44. Furthermore, when the phototransistor 66 operates in the active region, the resistor 42 causes the forward current to flow as a light-receiving current to the phototransistor 33 according to the degree of conduction between the phototransistor 66 and the phototransistor 33. When 33 operates in the saturation region, most of the light-receiving current flows into the phototransistor 36 as a light-receiving current, and the bias voltage is lowered to a value necessary to make the transistor 26 non-conductive. Note that the transistor 45 is in an operating state corresponding to the operating state of the phototransistor 66.

トランジスタ46ば、スイッチング素子として機能する
もので、そのベースにて面抵抗42.44の共通端に接
続されるとともに、そのコレクタにて抵抗45を介して
直流電源vDの正側端子に接続されている。しかして、
トランジスタ46は、面抵抗42.44の共通端に生じ
るバイアス電圧に応答して導通するとともに、かかるバ
イアス電圧の低下に応答して非導通となる。このことは
、トランジスタ46がその導通及び非導通の繰返しに基
き、回転部材100回転速度に対応する速度信号をその
コレクタ、即ち出力端子46/lから生じることを意味
する。
The transistor 46 functions as a switching element, and has its base connected to the common terminal of the sheet resistors 42 and 44, and its collector connected to the positive terminal of the DC power supply vD via the resistor 45. There is. However,
Transistor 46 becomes conductive in response to a bias voltage developed at the common end of sheet resistors 42, 44, and becomes non-conductive in response to a decrease in such bias voltage. This means that the transistor 46 produces a speed signal from its collector, ie the output terminal 46/l, which corresponds to the rotational speed of the rotating member 100 due to its repeated conduction and non-conduction.

以」−のように構成した本実施例において、発光ダイオ
ード62が抵抗41を通して直流電源VDから給電され
て導通することによυ順方向電流を発生するとともに発
光したとき、この発光ダイオード62からの光が、例え
ば、停止状態にある円板20のスリット21を通してす
べてホトトランジスタ33により受光されるとすれば、
ホI−)ランジスタロ3がその飽和領域にて導通してト
ランジスタ43も導通し、発光ダイオード32からの順
方向電流が殆んどホトトランジスタ66及びトランジス
タ46に流入し、面抵抗42.44の共通端にはバイア
ス電圧が発生せず、トランジスタ46が非導通状態に維
持されて出力端子46aからハイレベル信号を生じる。
In this embodiment configured as follows, when the light emitting diode 62 is supplied with power from the DC power supply VD through the resistor 41 and becomes conductive, it generates a forward current and emits light. For example, if all the light is received by the phototransistor 33 through the slit 21 of the disk 20 in the stopped state,
(I-) The transistor 3 is conductive in its saturation region, the transistor 43 is also conductive, and most of the forward current from the light emitting diode 32 flows into the phototransistor 66 and the transistor 46, and the common sheet resistance 42.44 No bias voltage is generated at the terminal, and transistor 46 remains non-conducting, producing a high level signal from output terminal 46a.

このような状態にて円板20が回転部材100回転に応
じて回転し始めると、ホトトランジスタ33が、円板2
0の一連の突起部22の一つにより、発光ダイオード6
2からの受光を遮断されて遮断領域にて動作することに
よりトランジスタ43と共に非導通となり、抵抗42が
発光ダイオード32からの受光電流を受けて抵抗44と
の共通端にてバイアス電圧を生じ、トランジスタ46が
かかるバイアス電圧に応答して導通しその出力端子46
aからローレベル信号を生じる。以後、ホトトランジス
タ63が円板200回転に伴い発光ダイオード32から
の受光及びその遮断を交互に繰返すことによりトランジ
スタ43と共に導通・非9− 導通を交互に繰返し、抵抗42が抵抗44との協働によ
り前記バイアス電圧を間欠的に発生し、これに応答して
トランジスタ46が導通・非導通を交互に繰返すことに
よりその出力端子46aからローレベル信号及びハイレ
ベル信号を交互に生じる。このことは、トランジスタ4
6が、これらローレベル信号及びハイレベル信号を、回
転部材10の回転速度に対応する速度信号として発生す
ることを意味する。
When the disk 20 starts rotating in response to 100 rotations of the rotating member in this state, the phototransistor 33
One of the series of protrusions 22 of the light emitting diode 6
The light reception from the light emitting diode 32 is blocked and the transistor 43 operates in the cutoff region, and becomes non-conductive together with the transistor 43.The resistor 42 receives the light reception current from the light emitting diode 32 and generates a bias voltage at the common terminal with the resistor 44, and the transistor 46 conducts in response to a bias voltage applied thereto, and its output terminal 46
A low level signal is generated from a. Thereafter, as the disk rotates 200 times, the phototransistor 63 alternately receives light from the light emitting diode 32 and blocks it, thereby repeating conduction and non-conduction alternately together with the transistor 43, and the resistor 42 cooperates with the resistor 44. The bias voltage is intermittently generated, and in response, the transistor 46 alternately repeats conduction and non-conduction, thereby alternately producing a low level signal and a high level signal from its output terminal 46a. This means that transistor 4
6 means that these low level signals and high level signals are generated as speed signals corresponding to the rotational speed of the rotating member 10.

しかして、回転部材10の停止に伴い、円板20が、そ
の一連の突起部22の一つにより、ホトトランジスタ3
3による発光ダイオード32からの受光を部分的に遮断
した状態にて停止したとき、ホトトランジスタ33の動
作領域が遮断領域から能動領域へ移行する過程にあれば
、ホトトランジスタ63の導通度合に対応する内部抵抗
値と面抵抗42.44の抵抗位相との並列合成抵抗値が
面抵抗42.44の抵抗位相より小さくなるため、発光
ダイオード32からの順方向電流の量及び発光量が共に
増大し、ホトトランジスタ63がその受光量の増大によ
り動作領域を飽和領域に向けて移行させるとともにその
導通度合を増大(即ち、内部抵抗値を減少)させる。す
ると、ホトトランジスタ66及びトランジスタ46に流
入する発光ダイオード32からの順方向電流の量が増大
するとともに抵抗42に流入する前記順方向電流の量が
減少して」二連のバイアス電圧を低下させ、これに伴い
トランジスタ46が非導通となってその出力端子461
2からの出力信号をハイレベルに維持する。
As the rotating member 10 stops, the disk 20 is moved by one of its series of protrusions 22 into the phototransistor 3.
When the phototransistor 33 is stopped with light reception from the light emitting diode 32 partially blocked, if the operating region of the phototransistor 33 is in the process of transitioning from the blocking region to the active region, it corresponds to the degree of conduction of the phototransistor 63. Since the parallel combined resistance value of the internal resistance value and the resistance phase of the sheet resistance 42.44 becomes smaller than the resistance phase of the sheet resistance 42.44, both the amount of forward current and the amount of light emission from the light emitting diode 32 increase, As the amount of light received by the phototransistor 63 increases, its operating region shifts toward the saturation region, and its degree of conduction increases (that is, its internal resistance value decreases). Then, the amount of forward current from the light emitting diode 32 flowing into the phototransistor 66 and the transistor 46 increases, and the amount of the forward current flowing into the resistor 42 decreases, thereby lowering the bias voltage of the two series. Accordingly, the transistor 46 becomes non-conductive and its output terminal 461
The output signal from 2 is maintained at a high level.

まだ、上述した円板20の停止時において、ホトトラン
ジスタ33の動作領域が飽和領域から能動領域へ移行す
る過程にあれば、ホ))ランジスクロロの導通度合に対
応する内部抵抗値と両抵抗42.44の抵抗位相との並
列合成抵抗値が、ホトトランジスタ66の飽和領域にお
ける内部抵抗値より大きくなるため、発光ダイオード6
2からの順方向電流の量及び発光量が共に減少し、ホト
トランジスタ36がその受光量の減少により動作領域を
遮断領域に向けて移行させるとともにその導通度合を減
少(即ち、内部抵抗値を増大)させる。すると、ホトト
ランジスタ33及びトランジスタ43に流入する発光ダ
イオード32からの順方向電流の量が減少するとともに
抵抗42に流入する前記順方向電流の量が増大し、トラ
ンジスタ46が両抵抗42.44の共通端に生じるバイ
アス電圧に応答して導通してその出力端子462からの
出力信号をローレベルに維持する。
If the operating region of the phototransistor 33 is still in the process of transitioning from the saturation region to the active region when the disk 20 is stopped as described above, then Since the parallel combined resistance value with the resistance phase of .44 is larger than the internal resistance value in the saturation region of the phototransistor 66, the light emitting diode 6
Both the amount of forward current and the amount of light emitted from the phototransistor 36 decrease, and the phototransistor 36 shifts its operating region toward the cutoff region due to the decrease in the amount of light received, and its degree of conduction decreases (that is, the internal resistance value increases). ). Then, the amount of forward current from the light emitting diode 32 flowing into the phototransistor 33 and the transistor 43 decreases, and the amount of the forward current flowing into the resistor 42 increases, so that the transistor 46 becomes the common source of both resistors 42 and 44. It conducts in response to a bias voltage developed at its terminal 462 to maintain the output signal from its output terminal 462 at a low level.

換言すれば、円板20の停止時にホトトランジスタ66
の動作領域が能動領域におかれるようなこととなっても
、発光ダイオード62からの発光量が、上述した並列合
成抵抗値の増大(又′i減少)に応じて減少(又は増大
)することにより正帰還作用としてホトトランジスタ6
6に機能してががるホトトランジスタの動作領域を遮断
領域(又はさ 飽和領域)へただちに移尚るので、トランジスタ46の
出力信号が、円板20の機械的振動等に起因する電気的
ノイズに影響されることなくローレベル(又はハイレベ
ル)に維持される。菅なお、前記実施例においては、回
転部材10の回転速度を検出するにあたり、円板20及
びホトインタラプタ30を採用した例について説明した
が、これに代えて、回転部材10の表面に光学的反射フ
ィルムを貼着するとともに、このフィルムに一対の半導
体発光素子と半導体受光素子を対向させて配設し、回転
部材10の回転状態にて前記フィルムにより反則される
前記半導体発光素子からの光を前記半導体受光素子によ
って受光し、この受光結果を回転部材100回転速度の
検出に利用するようにしても前記実施例と同様の作用効
果を達成できる。かかる場合、抵抗44を省略して実施
してもよく、また、トランジスタ46に代えてサイリス
ク等の各種半導体スイッチング素子を採用してもよい。
In other words, when the disk 20 is stopped, the phototransistor 66
Even if the operating region of the light emitting diode 62 is placed in the active region, the amount of light emitted from the light emitting diode 62 will decrease (or increase) in accordance with the above-mentioned increase in the parallel combined resistance value (or decrease in 'i). As a positive feedback effect, the phototransistor 6
Since the operating region of the phototransistor 6 immediately shifts to the cutoff region (or saturation region), the output signal of the transistor 46 is free from electrical noise caused by mechanical vibration of the disk 20, etc. is maintained at low level (or high level) without being affected by SugaIn addition, in the embodiment described above, an example was explained in which the disk 20 and the photointerrupter 30 were used to detect the rotational speed of the rotating member 10. A film is attached, and a pair of a semiconductor light emitting element and a semiconductor light receiving element are arranged facing each other on this film, and the light from the semiconductor light emitting element reflected by the film when the rotating member 10 is rotated is reflected by the semiconductor light emitting element. Even if the light is received by a semiconductor light-receiving element and the result of this light reception is used to detect the rotational speed of the rotating member 100, the same effects as in the embodiment described above can be achieved. In such a case, the resistor 44 may be omitted, and the transistor 46 may be replaced with various semiconductor switching elements such as SIRISK.

以上説明したとおり、本発明においては、前記実施例に
て例示したごとく、回転部材の回転に伴って回転する回
転体に対向するように配設されて電源から印加電圧を受
けて導通したときこの導通度合に応じて順方向電流を生
じるとともにこの順方向電流に応じた量にて前記回転体
に向けて発光する半導体発光素子と、前記回転体に対向
するように配設されて前記回転部材の回転に応じて前記
回転体を介して前記半導体発光素子から受光することに
より導通したときこの導通度合に応じて受光電流を生じ
るとともにこれを受光信号として発生する半導体受光素
子とを有して、前記受光信号に応答してこれを前記回転
部材の回転速度に対応する出力信号として発生する信号
処理回路が、前記半導体受光素子と共に前記半導体発光
素子に接続されて前記半導体受光素子の導通度合に応じ
て前記半導体発光素子の導通度合を変化させるとともに
前記順方向電流を前記半導体受光素子の導通度合により
規定される値にて受けて端子電圧を生じる抵抗素子と、
前記端子電圧が第1所定値になったとき導通するととも
に第2所定値になったとき非導通となる半導体スイッチ
ング素子とを具備し、この半導体スイッチング素子の導
通及び非導通に基き前記出力信号を生じるようにしたこ
とにその構成上の特徴がある。これにより、上述したご
とく、前記半導体受光素子の導通度合に応じて前記半導
体発光素子の導通度合が変化するので、前記回転部材の
停止時に前記半導体受光素子の導通度合がその能動領域
に対応する値となったとしても、前記半導体発光素子か
らの発光量が前記半導体受光素子に対し正帰還的に作用
してかかる半導体受光素子の動作領域を遮断領域或いは
飽和領域に即座に移行させることができ、その結果本明
細書に述べた不具合を伴うことなく、前記回転部材の停
止時にはその回転速度を零として常に正しく検出できる
As explained above, in the present invention, as exemplified in the above-mentioned embodiments, when the rotating member is disposed to face the rotating body that rotates as the rotating member rotates and receives the applied voltage from the power source and becomes conductive, this a semiconductor light emitting element that generates a forward current depending on the degree of conduction and emits light toward the rotating body in an amount corresponding to the forward current; and a semiconductor light-receiving element that receives light from the semiconductor light-emitting element via the rotating body in response to rotation and generates a light-receiving current according to the degree of conduction when electrically connected, and generates this as a light-receiving signal, A signal processing circuit that responds to the light reception signal and generates the signal as an output signal corresponding to the rotational speed of the rotating member is connected to the semiconductor light emitting element together with the semiconductor light receiving element, and is connected to the semiconductor light receiving element according to the degree of conduction of the semiconductor light receiving element. a resistance element that changes the degree of conduction of the semiconductor light emitting element and receives the forward current at a value defined by the degree of conduction of the semiconductor light receiving element to generate a terminal voltage;
a semiconductor switching element that becomes conductive when the terminal voltage reaches a first predetermined value and becomes non-conductive when the terminal voltage reaches a second predetermined value; and the output signal is determined based on conduction and non-conduction of the semiconductor switching element. Its structural feature lies in the fact that it is made to occur. As a result, as described above, the degree of conduction of the semiconductor light-emitting element changes depending on the degree of conduction of the semiconductor light-receiving element, so that when the rotating member is stopped, the degree of conduction of the semiconductor light-receiving element is set to a value corresponding to its active area. Even if , the amount of light emitted from the semiconductor light emitting element acts on the semiconductor light receiving element in a positive feedback manner, so that the operating region of the semiconductor light receiving element can be immediately shifted to a cutoff region or a saturated region, As a result, the rotational speed of the rotating member is set to zero when the rotating member is stopped, and accurate detection is always possible without the problems described in this specification.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の一部を構成する円板及びホトインタ
ラプタの部分破断正面図、第2図は、第1図における円
板及びホトインタラプタの側面図、及び第3図は、ホト
インタラプタに接続した信号処理回路の電気回路図であ
る。 符号の説明 10・・・回転部材、20・・・円板、32・・・発光
ダイオード、66・・・ホトトランジスタ、40・・・
信号処理回路、42.44・・・抵抗、46・・・トラ
ンジスタ。 出願人 日本電装株式会社 代理人 弁理士 長 谷 照 −
FIG. 1 is a partially cutaway front view of the disk and photointerrupter that constitute a part of the present invention, FIG. 2 is a side view of the disk and photointerrupter in FIG. 1, and FIG. 3 is a side view of the photointerrupter. FIG. 2 is an electrical circuit diagram of a signal processing circuit connected to the circuit. Explanation of symbols 10... Rotating member, 20... Disc, 32... Light emitting diode, 66... Phototransistor, 40...
Signal processing circuit, 42.44...Resistor, 46...Transistor. Applicant Nippondenso Co., Ltd. Agent Patent Attorney Teru Hase −

Claims (1)

【特許請求の範囲】 回転部材の回転に伴って回転する回転体に対向するよう
に配設されて電源から印加電圧を受けて導通したときこ
の導通度合に応じて順方向電流を生じるとともにこの順
方向電流に応じた量にて前記回転体に向けて発光する半
導体発光素子と、前記回転体に対向するように配設され
て前記回転部材の回転に応じて前記回転体を介して前記
半導体発光素子から受光することにより導通したときこ
の導通度合に応じて受光電流を生じるとともにこれを受
光信号として発生する半導体受光素子と、前記受光信号
に応答してこれを前記回転部材の回転速度に対応する出
力信号として発生する信号処理回路とを備えた回転速度
検出装置において、前記信号処理回路が、前記半導体受
光素子と共に前記半導体発光素子に接続されて前記半導
体受光素子の導通度合に応じて前記半導体発光素子の導
通1一 度合を変化させるとともに前記順方向電流を前記半導体
受光素子の導通度合により規定される値にて受けて端子
電圧を生じる抵抗素子と、前記端子電圧が第1所定値と
なったとき導通するとともに第2所定値となったとき非
導通となる半導体スイッチング素子とを具備して、この
半導体スイッチング素子の導通及び非導通に基き前記出
力信号を発生するようにしたことを特徴とする回転速度
検出装置。
[Claims] When the rotating member is disposed so as to face a rotating body that rotates as the rotating member rotates, and receives an applied voltage from a power source and becomes conductive, a forward current is generated depending on the degree of conduction, and a forward current is generated in accordance with the degree of conduction. a semiconductor light emitting element that emits light toward the rotating body in an amount corresponding to a directional current; and a semiconductor light emitting element that is disposed to face the rotating body and emits light via the rotating body in accordance with rotation of the rotating member. a semiconductor light-receiving element that generates a light-receiving current according to the degree of conduction when electrically connected by receiving light from the element, and generates this as a light-receiving signal; In a rotational speed detection device comprising a signal processing circuit that generates an output signal, the signal processing circuit is connected to the semiconductor light-emitting element together with the semiconductor light-receiving element, and controls the semiconductor light-emitting element according to the degree of conduction of the semiconductor light-receiving element. a resistance element that changes the degree of conduction of the element and generates a terminal voltage by receiving the forward current at a value defined by the degree of conduction of the semiconductor light-receiving element, and the terminal voltage becomes a first predetermined value. and a semiconductor switching element that becomes conductive when a second predetermined value is reached and becomes non-conductive when a second predetermined value is reached, and the output signal is generated based on whether the semiconductor switching element is conductive or non-conductive. Rotation speed detection device.
JP16274682A 1982-09-18 1982-09-18 Rotational speed detector Pending JPS5951360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16274682A JPS5951360A (en) 1982-09-18 1982-09-18 Rotational speed detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16274682A JPS5951360A (en) 1982-09-18 1982-09-18 Rotational speed detector

Publications (1)

Publication Number Publication Date
JPS5951360A true JPS5951360A (en) 1984-03-24

Family

ID=15760469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16274682A Pending JPS5951360A (en) 1982-09-18 1982-09-18 Rotational speed detector

Country Status (1)

Country Link
JP (1) JPS5951360A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61118018U (en) * 1985-01-11 1986-07-25
JPS63274819A (en) * 1987-05-06 1988-11-11 Sharp Corp Optical coupling element interface circuit
US6463223B1 (en) 1998-10-09 2002-10-08 Canon Kabushiki Kaisha Electrophotographic image forming apparatus, process cartridge developing device, developer supply container and measuring part therefor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61118018U (en) * 1985-01-11 1986-07-25
JPH0416176Y2 (en) * 1985-01-11 1992-04-10
JPS63274819A (en) * 1987-05-06 1988-11-11 Sharp Corp Optical coupling element interface circuit
US6463223B1 (en) 1998-10-09 2002-10-08 Canon Kabushiki Kaisha Electrophotographic image forming apparatus, process cartridge developing device, developer supply container and measuring part therefor

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