KR940004104Y1 - Compensation circuit for photosenser - Google Patents
Compensation circuit for photosenser Download PDFInfo
- Publication number
- KR940004104Y1 KR940004104Y1 KR2019910002604U KR910002604U KR940004104Y1 KR 940004104 Y1 KR940004104 Y1 KR 940004104Y1 KR 2019910002604 U KR2019910002604 U KR 2019910002604U KR 910002604 U KR910002604 U KR 910002604U KR 940004104 Y1 KR940004104 Y1 KR 940004104Y1
- Authority
- KR
- South Korea
- Prior art keywords
- light
- phototransistor
- compensation circuit
- transmitter
- low
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
- G01V8/00—Prospecting or detecting by optical means
- G01V8/10—Detecting, e.g. by using light barriers
- G01V8/12—Detecting, e.g. by using light barriers using one transmitter and one receiver
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/444—Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/4473—Phototransistor
Abstract
내용 없음.No content.
Description
제1도는 종래의 투광기의 빛에 의한 광센서 회로도.1 is a light sensor circuit diagram of light of a conventional floodlight.
제2도는 제1도에 있어서 포토트랜지스터의 에미터 전압 파형도2 is an emitter voltage waveform diagram of a phototransistor in FIG.
제3도는 본 고안의 투광기의 빛에 의한 광센서의 외광란 보상회로도.3 is an external light compensation circuit diagram of the optical sensor by the light of the transmitter of the present invention.
제4도는 제3도에 있어서 포토 트랜지스터의 에미터 전압 파형도.4 is an emitter voltage waveform diagram of a photo transistor in FIG. 3;
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : 구동전원 20 : 주회로10: driving power source 20: main circuit
30 : 포토트랜지스터 40 : 트랜지스터30: phototransistor 40: transistor
100 : 투광기 200 : 수광기100: emitter 200: receiver
Rl∼R6 : 저항 Cl,C2 : 콘덴서Rl to R6: resistance Cl, C2: capacitor
본 고안은 광센서에 관한 것으로, 특히 투광기에서 빛을 보냄에 따라 수광기에서는 투광기가 보낸 빛을 감지하여 물체의 유무를 판별하는 광센서로서 투광기에서 보내는 빛이외에 태양광이나 할로겐광등의 주위광에 의한 오동작을 방지하도록한 광센서의 외광란 보상회로에 관한 것이다.The present invention relates to an optical sensor, and in particular, as the light is sent from the transmitter, the receiver detects the light sent by the transmitter to determine the presence of an object. In addition to the light from the transmitter, it is applied to ambient light such as sunlight or halogen light. The external light compensation of the optical sensor to prevent the malfunction caused by the present invention.
종래의 기술구성은 제1도에 도시한 바와같이 투광기(100)와 수광기(200)에 있어서, 상기 수광기(200)에는 구동전원(10)과 주회로(20) 및 포토트랜지스터(30)을 연결하여 포토트랜지스터(30)의 컬렉터(Collector)에는 저항(Rl)을 연결하고 포토트랜지스터(30)의 베이스(Base)에는 저항(R2,R3)을 연결하며 포토트랜지스터 (30)의 에미터(emitter)에는 저항(R4,R5)과 콘텐서(Cl)를 연결한다.The prior art configuration of the transmitter 100 and the receiver 200, as shown in FIG. 1, wherein the receiver 200 includes a driving power source 10, a main circuit 20, and a phototransistor 30. Connect a resistor (Rl) to the collector (Collector) of the phototransistor 30, and connects the resistors (R2, R3) to the base (base) of the phototransistor 30 and emitters of the phototransistor (30) The resistor (R4, R5) and the capacitor (Cl) are connected to the emitter.
상기 저항(R5)과 콘텐서(Cl)는 주회로(20)에 연결되고 저항(R3, R4)과 주회로(20)는 접지단에 연결된다.The resistor R5 and the capacitor Cl are connected to the main circuit 20, and the resistors R3 and R4 and the main circuit 20 are connected to the ground terminal.
이하 상기한 종래 기술구성의 동작상태를 첨부된 도면에 따라 상세히 설명하면 다음과 같다.Hereinafter, the operation state of the prior art configuration will be described in detail with reference to the accompanying drawings.
제1도의 투광기(100)에서 나오는 빛은 제2a도에 도시된 바와같이 투광기(100)의 구형파인 톱니파형으로 투시되고 있고 이 빛의 외광란이 없을때는 포토트랜지스터(30)가 투광기(100)빛에 의하여 구동하게 되므로 에미터 전압(Ve)의 파형은 제2b도와 같이 외광란이 없을때의 파형으로 동작한다.Light emitted from the transmitter 100 of FIG. 1 is projected as a sawtooth wave, which is a square wave of the transmitter 100, as shown in FIG. 2A, and when there is no external light of the light, the phototransistor 30 is the transmitter 100 Since it is driven by light, the waveform of the emitter voltage Ve operates as a waveform when there is no external light as shown in FIG.
그러나, 투광기(100)에서 보내는 빛이외에 태양광이나 할로겐광등 비교적 저주파의 직류광이 포토트랜지스터(30)에 도달하면 상기 포토트랜지스터(30)는 포화되어 구동되지만 신호광을 검출하지 못하게 되므로 투광기(100)에서 나오는 에미터 전압(Ve)의 파형은 외광란에 의해 제2c도와 같은 파형이 되어 광센서가 오동작을 일으키는 문제점이 있다.However, when a relatively low frequency DC light such as solar light or halogen light reaches the phototransistor 30 in addition to the light transmitted from the light transmitter 100, the phototransistor 30 is saturated and driven but cannot detect signal light. The waveform of the emitter voltage (Ve) coming out from) becomes a waveform as shown in FIG. 2C due to external light disturbance, causing the optical sensor to malfunction.
이에따라 본 고안은 상기한 문제점을 해결하기 위한 것으로써, 제3도에 도시한 바와같이 투광기(100)와 수광기(200)에 있어서, 상기 수광기(200)에는 구동전원(10)과 주회로(20) 및 포토트랜지스터(30), 트랜지스터(40)를 연결하고 상기 포토트랜지스터(30)의 컬렉터단에는 저항(Rl)을 연결하고 포토트랜지스터(30)의 베이스단에는 저항(R2)를 연결하며 포토트랜지스터 (30)의 에미터단은 저항(R4, R5, R6)에 접속된다.Accordingly, the present invention is to solve the above problems, and as shown in FIG. 3, in the light transmitter 100 and the light receiver 200, the light receiver 200 includes a driving power source 10 and a main circuit. 20 and the phototransistor 30 and the transistor 40 are connected to each other, a resistor Rl is connected to the collector terminal of the phototransistor 30, and a resistor R2 is connected to the base terminal of the phototransistor 30. The emitter stage of the phototransistor 30 is connected to the resistors R4, R5, R6.
또한 트랜지스터(40) 베이스단에 콘덴서(C2)와 저항(R6)을 연결하고 저항(R5)와 콘덴서(Cl)는 주회로(20)에 접속된다.In addition, the capacitor C2 and the resistor R6 are connected to the base terminal of the transistor 40, and the resistor R5 and the capacitor Cl are connected to the main circuit 20.
저항(R3, R4)와 콘텐서(C2) 및 주회로(20)는 접지단에 연결하여 구성한다.The resistors R3 and R4, the capacitor C2 and the main circuit 20 are connected to the ground terminal.
이하 상기한 본 고안의 동작상태 및 작용효과를 첨부된 도면에 의하여 상세히 설명하면 다음과 같다.Hereinafter, the operation state and the effect of the present invention described in detail by the accompanying drawings as follows.
제3도의 투광기(100)에서 나오는 빛은 제4a도에 도시한 바와같이 투광기(100)이 구형파인 톱니파형으로 투시되고 있고, 이 빛의 외광란이 없을때는 포토트랜지스터(30)가 투광빛에 의하여 구동하게 되므로 에미터전압(Ve)의 파형은 제4b도와 같이 외광란이 없을때의 파형으로 동작한다.The light emitted from the transmitter 100 of FIG. 3 is projected as a sawtooth wave in which the transmitter 100 is a square wave as shown in FIG. 4A, and when there is no external light of the light, the phototransistor 30 is transmitted to the transmitted light. As a result, the waveform of the emitter voltage Ve operates as a waveform when there is no external light as shown in FIG. 4b.
이때 트랜지스터(40)는 저항(R6)과 콘덴서(C2)의 시정수때문에 구동할수 없지만 투광기(100)가 보내는 빛이외의 태양광이나 할로겐광등 비교적 저주파의 직류광이 포토트랜지스터(30)에 도달하면 상기 포토트랜지스터(30)는 포화되어 구동된다.At this time, the transistor 40 cannot be driven due to the time constants of the resistor R6 and the capacitor C2, but relatively low-frequency DC light such as sunlight or halogen light other than the light transmitted by the transmitter 100 reaches the phototransistor 30. The phototransistor 30 is saturated when driven.
그렇기 때문에 저주파의 주위광(직류광)을 저항(R6)과 콘덴서(C2)의 시정수에 의해 검출하여 트랜지스터(40)가 구동하게 되므로 포토트랜지스터(30)의 베이스전류를 일정하게 하고, 투광기(100)의 신호광(고주파)은 포토트랜지스터(40)가 감지한 상태로 콘덴서(Cl)을 통하여 주회로에 전달하게 되므로 외광란에 의한 오동작은 하지 않는다.Therefore, since the transistor 40 is driven by detecting the low-frequency ambient light (direct light) by the time constants of the resistor R6 and the capacitor C2, the base current of the phototransistor 30 is made constant and the light emitter ( Since the signal light (high frequency) of the 100 is transmitted to the main circuit through the capacitor Cl in a state where the phototransistor 40 is detected, no malfunction due to external light disturbance is performed.
즉, 주파수(R-C)공전에 의한 회로동작 제어로서 저주파는 통과하지 못한다.That is, the low frequency cannot pass as the circuit operation control by the frequency (R-C) revolution.
이상과 같이 본 고안에 따른 광센서의 외광란 보상회로는 외부 주위광 및 저주파 직류광등에 의한 오동작을 막을수 있는 효과가 있다.As described above, the external light compensation circuit of the optical sensor according to the present invention has an effect of preventing malfunction caused by external ambient light and low frequency DC light.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910002604U KR940004104Y1 (en) | 1991-02-25 | 1991-02-25 | Compensation circuit for photosenser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910002604U KR940004104Y1 (en) | 1991-02-25 | 1991-02-25 | Compensation circuit for photosenser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920017225U KR920017225U (en) | 1992-09-17 |
| KR940004104Y1 true KR940004104Y1 (en) | 1994-06-20 |
Family
ID=19311211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019910002604U KR940004104Y1 (en) | 1991-02-25 | 1991-02-25 | Compensation circuit for photosenser |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR940004104Y1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100405259B1 (en) * | 2001-10-19 | 2003-11-12 | 홍영기 | sling of fire fighting water gun |
-
1991
- 1991-02-25 KR KR2019910002604U patent/KR940004104Y1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100405259B1 (en) * | 2001-10-19 | 2003-11-12 | 홍영기 | sling of fire fighting water gun |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920017225U (en) | 1992-09-17 |
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