JPS5950574A - Amorphous solar battery - Google Patents
Amorphous solar batteryInfo
- Publication number
- JPS5950574A JPS5950574A JP57159670A JP15967082A JPS5950574A JP S5950574 A JPS5950574 A JP S5950574A JP 57159670 A JP57159670 A JP 57159670A JP 15967082 A JP15967082 A JP 15967082A JP S5950574 A JPS5950574 A JP S5950574A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- type layer
- metal electrode
- solar cell
- amorphous solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000011195 cermet Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 24
- 239000000969 carrier Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
この発明は多層構造を有するアモルファス太陽電池の改
良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in amorphous solar cells having a multilayer structure.
第１図は従来の多層構造アモルファス太陽電池の平面図
、第２図はその■−■線での断面図である。ステンレス
鋼などの金属基板（］）の上に順次堆積した第１のｐ形
アモルファス半導体層Ｃｒｐ形層」と称し、以下これに
準する。） （２ａ）、 第１の１形層（３ａ）、第１
のｎ形層 （４ａ）、 ｍ’ｔ、２のｐ形層１ （２ｂ
）、第２の１形層（３ｂ）および第２のｎ形層（ａ、ｂ
）、並びに更にその上に形成されたＩ Ｔ Ｏ（Ｉ ｎ
２０３とＳｎＯ３との混合物）などの透明導電膜（５
）および電気抵抗低減のための金属電極（６）によって
多層構造アモルファ２、太ＫＷ％池は邪７成されている
。FIG. 1 is a plan view of a conventional multilayer amorphous solar cell, and FIG. 2 is a cross-sectional view taken along the line ■-■. A first p-type amorphous semiconductor layer sequentially deposited on a metal substrate (]) such as stainless steel. ) (2a), first monolayer (3a), first
n-type layer of (4a), p-type layer 1 of m't, 2 (2b
), the second 1-type layer (3b) and the second n-type layer (a, b
), and I T O (I n
Transparent conductive film (mixture of 203 and SnO3) etc.
) and a metal electrode (6) for reducing electrical resistance, the multilayer structure amorphous 2, thick KW% pond is formed.
ここでは２つのｐｉｎ接合を積層したものを示したが、
３層以上のものも当然あり得る。この多層構造の太陽電
池は、複数個のホトダイオードを直列に接続したものと
考えてよく、太陽光スペクトルを広い波長範囲にわたっ
て有効利用することができる。すなわち、光を吸収しキ
ャリアを発生するｉ形層の禁止帯幅を上層の第２の１形
層（３ｂ）と下層の第１の１形層（３ａ）とで異なった
値になるようにすることによって、それぞれの１形層（
３ａ）＋ （３ｂ）で吸収する光の波長領域を配分分担
させ、全体として単層のｐｉｎ接合太陽電池よりも光の
吸収効率を向上することができる。Here, we have shown a stack of two pin junctions, but
Of course, it is also possible to have three or more layers. This multilayer solar cell can be thought of as a plurality of photodiodes connected in series, and can effectively utilize the sunlight spectrum over a wide wavelength range. That is, the forbidden band width of the i-type layer that absorbs light and generates carriers is made to be different between the upper second 1-type layer (3b) and the lower first 1-type layer (3a). By doing, each one-form layer (
By allocating and sharing the wavelength range of light to be absorbed by 3a) + (3b), the light absorption efficiency can be improved as a whole compared to a single-layer pin junction solar cell.
ところで、従来から太陽電池の上面には透明導電膜（５
）が全面に形成されてはいるが、その電気抵抗は十分小
さいとは言えず、その抵抗によって電力損失を生じるの
で、通常第１図、第２図に示すように更にその上に金属
電極（６）を部分的に形成して、上記電気抵抗の低下を
計っている。しかし、これは光に対しては遮光体となる
ので、この金属電極（６）の直下ではキャリアが発生し
ないばかりか、他の光照射部で発生した電流の内部負荷
となり、不都合なものである。従って、この金属電極（
６）の形状はこのような弊害をできるだけ小さくして目
的を達するよう種々工夫がなされている。一方、多層構
造においては第１のｐｉｎ層と第２のｐｉｎ層との界面
すなわち、第１のｎ形層（４ａ）と第２のｐ形層（２ｂ
）とはトンネル接合でつながるわけであるが、必らずし
もこれがきれいに接続されるわけではなく、ポテンシャ
ルバリアが形成されることがあり、満足すべき特性のも
のを得ることは困難であった。By the way, conventionally, the upper surface of a solar cell is covered with a transparent conductive film (5
) is formed on the entire surface, but its electrical resistance is not sufficiently small and this resistance causes power loss, so normally a metal electrode ( 6) is partially formed to reduce the electrical resistance. However, since this serves as a light shield against light, carriers are not generated directly under this metal electrode (6), and it becomes an internal load for the current generated in other light irradiation parts, which is inconvenient. . Therefore, this metal electrode (
The shape of 6) has been devised in various ways to minimize such adverse effects and achieve the purpose. On the other hand, in a multilayer structure, the interface between the first pin layer and the second pin layer, that is, the first n-type layer (4a) and the second p-type layer (2b
) are connected through a tunnel junction, but this does not always connect neatly and a potential barrier may form, making it difficult to obtain satisfactory characteristics. .
この発明は以上のような点に鑑みてなされたもので、不
可欠な表面の金属電極の直下の陰となる部分を利用して
第１のｐｉｎ層と第２のｐｉｎ層との界面に金属薄膜を
挿入することによってｌｉ’Ｊｌｌ）ｉｎ層の電気接続
を良好ならしめ、すぐれた特性のアモルファス太陽電池
を得ることを特徴としている。This invention was made in view of the above points, and utilizes the shaded area directly under the metal electrode on the essential surface to form a metal thin film at the interface between the first pin layer and the second pin layer. By inserting the li'Jll)in layer, the electrical connection is made good and an amorphous solar cell with excellent characteristics is obtained.
第３図はこの発明の一実施例を示す断面図で、従来例の
第２図に対応するものである。図において、従来例と同
等部分には同一符号を付したので、その説明省略する。FIG. 3 is a sectional view showing one embodiment of the present invention, and corresponds to FIG. 2 of the conventional example. In the figure, parts that are equivalent to those of the conventional example are given the same reference numerals, so explanations thereof will be omitted.
図示のように、第１のｎ形層（４ａ）と第２のｐ形層（
２ｂ）との界面のうち、表面の金属電極（６）の直下で
陰となる部分のみに金属薄膜（７）が挿入されている。As shown in the figure, a first n-type layer (4a) and a second p-type layer (
2b), a metal thin film (7) is inserted only in the shaded area directly below the metal electrode (6) on the surface.
前ニモ述べたように、この陰の部分は光発電素子として
は死んだ領域であるが、この実施例ではこの領域を利用
して金属薄膜（７）によって２′：）のｐｉｎ層間の電
気的接続をより確実、良好にしたもので下層のｐｉｎ接
合への入射光量を損なわず、すなわち、光利用効率を低
下させることなく、特性のよいアモルファス太陽電池が
実現できる。As mentioned above, this shaded area is a dead area as a photovoltaic element, but in this example, this area is used to create electrical connections between the pin layers of 2':) using the metal thin film (7). With a more reliable and better connection, an amorphous solar cell with good characteristics can be realized without impairing the amount of light incident on the underlying pin junction, that is, without reducing the light utilization efficiency.
また、金属薄膜の代りにサーメット薄膜を用いてもよい
。Furthermore, a cermet thin film may be used instead of the metal thin film.
以上説明したように、この発明になるアモルファス太陽
電池では複数個のｐｉｎ接合層の相互間の界面の、上表
面の金属電極の陰となる部分に導電薄膜を挿入したので
、ｐｉｎ接合層相互間の電気的接続は良好となり、特性
を良好ならしめることができる。As explained above, in the amorphous solar cell according to the present invention, a conductive thin film is inserted in the part of the interface between the plurality of pin junction layers, which is in the shadow of the metal electrode on the upper surface. The electrical connection becomes good, and the characteristics can be improved.
第１図は従来の多層構造アモルファス太陽電池の平面図
、第２図は第１図の■−■線での断面図、第３図はこの
発明の一実施例の上記第２図に対応する位置での断面図
である。
図において、（１）は金属基板、（２ａ）、 （２ｂ）
はｐ形層、（３ａ）、 （３１））はｉ形層、（ａａ）
、 （４ｂ）はｎ形層、（６１は金属電極、（７）は金
属薄膜（導電薄膜）である。
なお、図中同一符号は同一または相当部分を示す０
出願人 工業技術院長 石板 誠−Fig. 1 is a plan view of a conventional multilayer amorphous solar cell, Fig. 2 is a cross-sectional view taken along the line ■-■ in Fig. 1, and Fig. 3 corresponds to Fig. 2 above of an embodiment of the present invention. FIG. In the figure, (1) is a metal substrate, (2a), (2b)
is p-type layer, (3a), (31)) is i-type layer, (aa)
, (4b) is an n-type layer, (61 is a metal electrode, and (7) is a metal thin film (conductive thin film). In addition, the same reference numerals in the figures indicate the same or corresponding parts. Applicant Makoto Ishiita, Director of the Agency of Industrial Science and Technology
Claims (1)
る２つのｐｉｎ接合層について互いに接し合うｐ形アモ
ルファス半導体層とｎ形アモルファス半導体層との界面
の、上記上表面から光を入射させたときに上記金属電極
の陰となる部分に導電薄膜を挿入したことを特徴とする
アモルファス太陽電池。 （２）導電薄膜が金属薄膜でるることを特徴とする特許
請求の範囲第１項記載のアモルファス太陽電池。 （３） 導電薄膜がサーメット薄膜であることを特徴
とする特許請求の範囲第１項記載のアモルファス太陽電
池。[Scope of Claims] In a device in which a metal electrode is formed on a metal electrode, light is emitted from the upper surface of the interface between a p-type amorphous semiconductor layer and an n-type amorphous semiconductor layer that are in contact with each other for two pin junction layers adjacent to each other. 1. An amorphous solar cell characterized in that a conductive thin film is inserted in a portion that becomes a shadow of the metal electrode when rays of light are incident on the metal electrode. (2) The amorphous solar cell according to claim 1, wherein the conductive thin film is a metal thin film. (3) The amorphous solar cell according to claim 1, wherein the conductive thin film is a cermet thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57159670A JPS5950574A (en) | 1982-09-16 | 1982-09-16 | Amorphous solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57159670A JPS5950574A (en) | 1982-09-16 | 1982-09-16 | Amorphous solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5950574A true JPS5950574A (en) | 1984-03-23 |
| JPS6227756B2 JPS6227756B2 (en) | 1987-06-16 |
Family
ID=15698763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57159670A Granted JPS5950574A (en) | 1982-09-16 | 1982-09-16 | Amorphous solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5950574A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017534184A (en) * | 2014-10-28 | 2017-11-16 | ソル ヴォルタイクス アーベー | Two-layer photovoltaic device |
-
1982
- 1982-09-16 JP JP57159670A patent/JPS5950574A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017534184A (en) * | 2014-10-28 | 2017-11-16 | ソル ヴォルタイクス アーベー | Two-layer photovoltaic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6227756B2 (en) | 1987-06-16 |
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