JPS5950458A - Formation of electrostatic latent image - Google Patents

Formation of electrostatic latent image

Info

Publication number
JPS5950458A
JPS5950458A JP16086182A JP16086182A JPS5950458A JP S5950458 A JPS5950458 A JP S5950458A JP 16086182 A JP16086182 A JP 16086182A JP 16086182 A JP16086182 A JP 16086182A JP S5950458 A JPS5950458 A JP S5950458A
Authority
JP
Japan
Prior art keywords
layer
electrodes
photoreceptor
photoconductive layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16086182A
Other languages
Japanese (ja)
Inventor
Kozo Oka
岡 孝造
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP16086182A priority Critical patent/JPS5950458A/en
Publication of JPS5950458A publication Critical patent/JPS5950458A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G13/00Electrographic processes using a charge pattern
    • G03G13/04Exposing, i.e. imagewise exposure by optically projecting the original image on a photoconductive recording material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electrophotography Using Other Than Carlson'S Method (AREA)

Abstract

PURPOSE:To eliminate the need for Corotron, by applying a voltage between the conductive substrate and beltlike electrodes of a photoreceptor consisting of the conductive substrate, insulation layer, beltlike electrodes and photoconductive layer, and injecting electric charge in the photoconductive layer then maintaining the substrate and the electrodes at the same potential and exposing an image to the photoreceptor. CONSTITUTION:An insulation layer 2 of polyester, etc. is provided on a conductive substrate 1, and beltlike electrodes A1-A3 of Al or others are formed thereon, then a photoconductive layer 4 is provided thereon. A voltage is applied between the substrate 1 and the electrodes A1-A3 and electric charge is injected into the layer 4. The injected electric charge arrives at the surface of the layer 4 and is trapped thereon. If the electrodes A1-A3 and the substrate 1 are then set at the same potential, the state similar to the state when corona discharge is performed is realized. An image is exposed on the surface of such photoreceptor, by which the electric charge on the surface is neutralized in the incident part of light and an electrostatic latent image is formed. The need for Corotron is thus eliminated.

Description

【発明の詳細な説明】 この発明は静電潜像形成方法、更に詳しく言えばコロナ
;iT7電を必要としない静電潜像形成方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming an electrostatic latent image, and more particularly to a method for forming an electrostatic latent image that does not require corona;

従来の′は子写真方法においては、椿秦感光体2にコロ
ナイオンを与えて帯電したのち露光を行ない、¥P電W
F1?を形成している。ところが、コロナイオンを発生
させるコロナ帯電器はトナーによる汚れなどによって特
性が変化しゃす(、装置の信頼性を低下させる大きな要
因の一つと1、[っている。また、コロナ帯電時に発生
するオゾン〜やその他の活性化学種は人体に有害である
だけでなく、感光体表面の導電性を高め、画像のボケや
白ヌケの原因となっている。さらにコロトロンに印加す
る電圧は数KVという高圧であり、電源のコストが高(
なるという欠点もある。
In the conventional photographic method, the Tsubakihata photoreceptor 2 is charged with corona ions and then exposed to light.
F1? is formed. However, the characteristics of the corona charger that generates corona ions change due to toner contamination, etc., which is one of the major factors that reduce the reliability of the device.In addition, ozone generated during corona charging and other active chemical species are not only harmful to the human body, but also increase the conductivity of the photoreceptor surface, causing blurred images and white spots.Furthermore, the voltage applied to the corotron is as high as several kilovolts. Yes, the cost of power supply is high (
There is also the drawback of becoming.

コロトロ/を用いない電子写真方式としては、特開tl
fl 54−61534号に記載されているエレクトロ
ダラフイー板を用いるものが公知であるが、この方式ヲ
r、感光体の裏面から露光し、かつ現像と露光を同時に
行わなければならない等、構が乙が複雑という欠点があ
る。
As an electrophotographic method that does not use Corotro/
A method using an electrodough board described in No. fl 54-61534 is known, but this method has some disadvantages, such as exposing from the back side of the photoreceptor and developing and exposing at the same time. The disadvantage is that the first part is complicated.

本発明は上記の欠点を改良し、光学系、現像系の配置は
通常の電子写真方式と同じで、コロトロンを不用とした
新規な静K i 浬形成方法を提供したものである。
The present invention improves the above-mentioned drawbacks and provides a new method for forming static K i grooves in which the arrangement of the optical system and the developing system is the same as in the usual electrophotographic method, and a corotron is not required.

すなわち、本発明は導電性支持体と絶縁性層と帯状電極
と光導電性層からなる感光体の絶縁柱層を挾んで存在す
る導電性支持体とイiF状屯極との間に電圧を印加する
ことによって帯状電極から光4′r…f1′、廣へ電荷
を注入し、次いで帯状電極と導電性支持体を同電位とし
て画(@露光を行ない、静電潜[象を形成することを特
徴とするものである。
That is, the present invention applies a voltage between the conductive support and the iF-shaped electrode, which are present across the insulating columnar layer of the photoreceptor, which is composed of the conductive support, the insulating layer, the strip electrode, and the photoconductive layer. By applying electric charges to the light 4'r...f1' from the strip electrode, the strip electrode and the conductive support are then exposed to the same potential to form an electrostatic latent image. It is characterized by:

以F本発明の詳細を図面に従って説明する。Hereinafter, details of the present invention will be explained with reference to the drawings.

第1図は5本発明に用いる感光体の平面図である。ここ
でA、  A2.A3、−− An−4,An −は平
行に並んだ帯状電4@を示す。第2図は、感光体の断面
図である。図中1は導電性支持体であり、これに接して
絶縁性層2が設ゆられている。絶縁性層2の上に帯状電
極3がそれぞれ平行に設けられ、さらにその」二に光導
電性層4が設けられている。
FIG. 1 is a plan view of a photoreceptor used in the present invention. Here A, A2. A3, -- An-4, An -- shows the strip-like electric conductors 4@ arranged in parallel. FIG. 2 is a cross-sectional view of the photoreceptor. In the figure, 1 is a conductive support, on which an insulating layer 2 is provided. Strip-shaped electrodes 3 are provided in parallel on the insulating layer 2, and a photoconductive layer 4 is further provided on the second side thereof.

この感光体σ)導電性支持体1としてレエ、金属や、グ
ラスチックフィルム表面に導電処理したもの等を広(使
用することができる。
As the conductive support 1 of the photoreceptor σ), a wide variety of materials such as resin, metal, and a glass film whose surface is subjected to conductive treatment can be used.

絶縁性層2には、ポリニスデル、ポリカーボネート、ポ
リウレタン、アクリル樹脂、シリコン樹脂、テフロン樹
脂等の高分子樹脂を用いろことができ、その厚さは5〜
10011mが適当である。
For the insulating layer 2, a polymer resin such as polynisdel, polycarbonate, polyurethane, acrylic resin, silicone resin, Teflon resin, etc. can be used, and the thickness thereof is 5 to 5.
10011m is appropriate.

’i’:j :(Is ’e= (M 3 jX、At
、 A9、Cr、N(、Au、Zn、Cu等の各種金属
を蒸着したのち化学エツチング法により・;iY状パタ
ーンを形成するか、あるいは平行な帯状間[コ部を有す
るマスクを介して上記金属な絶縁性層に蒸着したのち、
マスクを除去することによって形成することができる。
'i':j:(Is 'e= (M 3 jX, At
, A9, Cr, N (, Au, Zn, Cu, etc.) are vapor-deposited and then chemically etched to form a Y-shaped pattern, or between parallel strips [the above through a mask having a After being deposited on a metallic insulating layer,
It can be formed by removing the mask.

この帯゛伏型)函0) p”Jさは500 ’h〜5μ
mσ〕間が望ましい。
This oblong type) box 0) p”J is 500’h ~ 5μ
mσ] is desirable.

・1′17状i[L極の巾と間隔は画像の解f象度と関
係するが一8tp/xの解1象度を実現するためにf工
、「1iJI l1J30〜80 /’m、電極間隔4
0〜1100zt程度が望ましい。
・1'17-shaped i Electrode spacing 4
Approximately 0 to 1100zt is desirable.

光導電性層4としては、Se、 5eTe−SeA++
、5eAsTe等σつ蒸着膜や、プラズマCVDによっ
て形成したアモルファスSi:H等の(1ハ、CdSや
ZnOの無機光導電粉末を結着樹脂中に分散したもの等
を用いることができろ6さらに、−光導電性層を電荷発
生層と心待輸送層の二層として形成1ろことも可能であ
る。この−場合電荷発生層としては、」二層の光導電体
の他に、フタロノアニン、シーr、二ン、メロ7アニン
、ビリリウノ、塩等の有機光シ、ダ7ガ体を用いること
ができる。また、電を1輸送層には、可視光に対してほ
ぼ透明な有機半導体が適している。例えばポリビニルカ
ルバゾール(PVK)等の高分子有機半導体、あるいは
低分子電子供与性物質をポリカーボネートやポリニスプ
ル等の樹脂中に分子分数させたものを用いろことができ
る。低分子電子供与性物質としては、アントラセン、2
,6−ジメテルーrントラセン、7エナントレン、−ピ
レン、コロネン等の縮合多JR式化合物、ジフェニルア
ミン、シナ7チルアミン、トリフェニルアミン、トリー
ルートリ/し’7ミ7、N、N、N’、N’−テトラフ
ェニル−1,3(及び−1,4)−7エニレンジ′アミ
ン、N 、 N 、 N’、 N’−テトラベンジル−
1,3(及び−1,4)−フェニレンジアミン、N、N
、N’、N’−テトラ〔2−メチルベノジル) −1,
3(及CF−1,4) −フェニレンジアミン、 N、
N、N’、N’−テトラ〔4−クロルベンジル] −1
,3(及び−1,4)−7エニレンジアミン、N、N、
N’、N’−テトラフェニル−〔1,1−ピフェニル〕
−4,4’−ジアミン、N 、 N’−ジフェニル−N
 、 N’−ビス−〔3−メチルフェニル]−[1,1
’−ビフェニル〕−4,4′−ジアミン、4,4′−ビ
ス−(N、N−ンエアルアミノ〕テトラフェニルメタン
等の芳香族アミン化合物、2− [4’−ジメチル゛r
ミノフェニル]−5−フェニル−オキサゾール等のオキ
サゾール誘導体、2− [4’−ジメチルアミンフェニ
ルクーベンズチアゾール等ノチアソ−ルiJ 導体、2
− [4’−クロロフェニル] −4,5−ジフェニル
ーイミグゾール等のイミダゾール誘導体、1.3.5−
 )リフェニルピンゾリ/、l−フェニル−3−(4’
−ジメチルアミノスチリル〕−5−(4“−ジメチルア
ミノフェニルクーピラゾリン、1−フェニル−3−[4
’−ジエチルアミノスチリル]−5−(4“−ジエチル
アミノフェニル〕−ピラゾリン等のピラゾリノ誘υを体
、2,5−ビス−〔4′−ジメチルアミノフェニル3−
1゜3.4−オキナシアゾール、2,5−ビス−〔4′
−ジエチル−rミノフェニル:] −]1.3.4−オ
ギザンアゾールのオキーリジアゾール誘導体、カルバゾ
ール及びN−エチルカルバソール、N−イソグロビル力
ルバゾール、N−フェニルカルバゾール、ベンズカルバ
ゾール等のカルバゾール誘導体を用いることができる。
As the photoconductive layer 4, Se, 5eTe-SeA++
, 5e AsTe, etc., amorphous Si:H (1), CdS or ZnO inorganic photoconductive powder dispersed in a binder resin, etc. can be used. It is also possible to form the photoconductive layer as two layers, a charge generation layer and a central transport layer. Organic semiconductors such as Shir, Ni, Melo7anine, Biririuno, Salt, etc. can be used.In addition, organic semiconductors that are almost transparent to visible light can be used as the electron transport layer. For example, a polymeric organic semiconductor such as polyvinylcarbazole (PVK) or a molecular fraction of a low-molecular electron-donating substance in a resin such as polycarbonate or polynispule can be used.Low-molecular electron-donating As a substance, anthracene, 2
, 6-dimetherene, 7-enanthrene, -pyrene, coronene, etc., fused poly-JR compounds such as diphenylamine, cina7thylamine, triphenylamine, tri-tri/shi'7-mi7, N, N, N', N'- Tetraphenyl-1,3(and-1,4)-7enylenedi'amine, N , N , N', N'-tetrabenzyl-
1,3(and-1,4)-phenylenediamine, N,N
, N', N'-tetra[2-methylbenozyl) -1,
3(and CF-1,4)-phenylenediamine, N,
N, N', N'-tetra[4-chlorobenzyl] -1
,3(and-1,4)-7enylenediamine,N,N,
N', N'-tetraphenyl-[1,1-piphenyl]
-4,4'-diamine, N, N'-diphenyl-N
, N'-bis-[3-methylphenyl]-[1,1
Aromatic amine compounds such as '-biphenyl]-4,4'-diamine, 4,4'-bis-(N,N-airamino]tetraphenylmethane, 2-[4'-dimethyl゛r
Oxazole derivatives such as [minophenyl]-5-phenyl-oxazole, Notiazole iJ conductors such as 2-[4'-dimethylamine phenylcubenzthiazole, etc.
- [4'-chlorophenyl] - Imidazole derivatives such as 4,5-diphenyl imiguzole, 1.3.5-
) liphenylpinzoli/, l-phenyl-3-(4'
-dimethylaminostyryl]-5-(4"-dimethylaminophenylcupirazoline, 1-phenyl-3-[4
2,5-bis-[4'-dimethylaminophenyl 3-
1゜3.4-Oquinacyazole, 2,5-bis-[4'
-Diethyl-r-minophenyl:] -] 1.3.4-Ochylidiazole derivatives of ogizanazole, carbazole and carbazole derivatives such as N-ethylcarbazole, N-isoglobil-rubazole, N-phenylcarbazole, and benzcarbazole are used. be able to.

光導電性層の厚さは5〜80μmの間であることが望ま
しい。
Preferably, the thickness of the photoconductive layer is between 5 and 80 μm.

次に本発明の静′屯沿鐵形成方法の説、明を行なう。第
3図に示すように、ni、 、r貝V1:支持体1と各
帯状11L極(ここで(まAl、A2、A3とする)と
の間に電圧を印加する。これにより、帯状電極から光導
電性層への電荷注入が生じろ。この゛電荷注入は電極材
料の選択によって容易に実現され、光導電旧科と電極材
料との仕事関数の関係により所望の電荷注入を生じさせ
ることができる。
Next, the method for forming a quiet coastal area of the present invention will be explained. As shown in FIG. 3, a voltage is applied between the support 1 and each strip 11L pole (here (denoted as Al, A2, and A3)).Thereby, the strip electrode Charge injection from the photoconductive layer into the photoconductive layer occurs. This charge injection can be easily achieved by selecting the electrode material, and the desired charge injection can be caused by the relationship between the work function of the photoconductive material and the electrode material. I can do it.

即ち、光導′ル拐料の仕事関数より大きな仕事関数を有
する電極材料を用いれば正孔の注入を、また逆に光導′
m材料の仕事関数より小さな仕事関数を有する′東極祠
科を用いれば電子の注入を行うことができる。
In other words, if an electrode material with a work function larger than that of the optical guide material is used, holes can be injected, and vice versa.
Electrons can be injected by using Togoku-Shika, which has a work function smaller than that of the m-material.

ここでは帯状電極に正正正を印加し、正市荷が注入する
場合を考える。注入されjこ電荷は光尋′准柱層の表面
に達してここでトラ、グされろ。
Here, we will consider the case where a positive voltage is applied to the strip electrode and a regular product is injected. The injected charges reach the surface of the optical columnar layer and are discharged here.

そこで・;■大電極と導電性支持体を四屯位に設定すれ
げ、第4図に示すように正のコロナ帯電を行なったのと
同様な状、態が実現する。次に感光体表面に1而[ψ露
光を与えることにより、光入射部分では表「Mの′電荷
が中和され、静電i’fl四が形成されろ。この過程を
第5図及び・86図に示す。
Therefore, by setting the large electrode and the conductive support in a four-sided arrangement, a state similar to that of positive corona charging as shown in FIG. 4 is realized. Next, by exposing the surface of the photoreceptor to 1 [ψ light, the charges of M' in the light incident area are neutralized and electrostatic charges i'fl4 are formed.This process is illustrated in Figure 5 and... Shown in Figure 86.

この静上mrψ(で対し、通常の電子写真方法と同ト羽
にして現像・転′・7・定着工程を実施することにより
、最終的な記録+lii r象を?4Jることかできろ
By performing the development, transfer, 7, and fixing steps in the same manner as in the normal electrophotographic method, it is possible to achieve a final recording +lii r image.

次(fこ、本発明の実施例について1悦明する。At板
上に厚す25μのポリニス尤ルフイルムをエボヤシ系の
接うR剤にて接着し、これに1肩ロ巾60tt、ピッチ
120μの帯状の開口j5Xを有するメタルマスクを重
ねあわせ、これKNiを約0.5 llの厚さに蒸着し
た後メタルマスクを取り除き、帯状べ極を得た。この上
に抵抗加熱方式の蒸着源を用いてSeを30μの厚さに
蒸着した。
Next, let me explain about the embodiment of the present invention. A 25 μm thick poly varnish film is adhered to an At board using an ebay-based bonding R agent, and the shoulder width is 60 tt and the pitch is 120 μm. A metal mask having a strip-shaped opening j5X was superimposed, and KNi was evaporated to a thickness of about 0.5 l, and then the metal mask was removed to obtain a strip-shaped electrode.A resistive heating type evaporation source was placed on top of this. Se was evaporated to a thickness of 30 μm.

次に導電性支持体を接地し、各帯状電極に+600 V
を約0.5秒間印加したのち、各帯状電極を接地した。
The conductive support is then grounded and each strip electrode is connected to +600 V.
was applied for about 0.5 seconds, and then each strip electrode was grounded.

次いで感光体表面に画像露光を行った後、負jCfj7
 ′市したトナーで現噸し、感光体表面にトナーfψを
得た。このトナー像を記録紙に転写、定着したところ良
好な両1@が得られた。
Next, after performing image exposure on the surface of the photoreceptor, negative jCfj7
'A toner fψ was obtained on the surface of the photoreceptor by using the marketed toner. When this toner image was transferred and fixed onto recording paper, a good quality of both 1@ was obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は木と1−明シて用いる感)Y1体の平面図、!
−b2図は同じ(感光体の断面図、第3図〜第6図は本
発明方法の説、四国である。 図中符号: 1・・・導1i(r、性支持体:2・・・絶縁性層;3
・・・・17状11し4<  ;  4 −  :)Y
: ;、’i  ri工件ハ号。 第  1  図
Figure 1 is a plan view of the Y1 body (the feeling of using wood and 1-light),!
Figure -b2 is the same (cross-sectional view of the photoreceptor, Figures 3 to 6 are explanations of the method of the present invention, Shikoku. Code in the figure: 1... conductor 1i (r, sexual support: 2...・Insulating layer; 3
...17-like 11-4<; 4-:)Y
:;, 'iri construction work no. Figure 1

Claims (1)

【特許請求の範囲】[Claims] 2h”)!’r、 P−1:支持体−L ICt、!縁
性IN、5と帯状電極と光導電性層とを順次設けてなる
感光体の絶縁性層を挾X7で存在する導電性支持体と帯
状電極との間に市、11三な印加l−で帯状電極から光
導電性層へ電荷を注入した後、ノ、ト1γ11.性支持
体と帯状電極を同電位として画像露光を行うことを特徴
とする静電m像形成方法。
2h'')!'r, P-1: Support -L ICt,! Edge IN, 5, a strip electrode, and a photoconductive layer are sequentially provided on the insulating layer of the photoreceptor, which is sandwiched between the conductive layers present at X7. After injecting a charge from the strip electrode to the photoconductive layer by applying a voltage between the polar support and the strip electrode, imagewise exposure is carried out with the polar support and the strip electrode at the same potential. An electrostatic m-image forming method characterized by performing the following steps.
JP16086182A 1982-09-17 1982-09-17 Formation of electrostatic latent image Pending JPS5950458A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16086182A JPS5950458A (en) 1982-09-17 1982-09-17 Formation of electrostatic latent image

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16086182A JPS5950458A (en) 1982-09-17 1982-09-17 Formation of electrostatic latent image

Publications (1)

Publication Number Publication Date
JPS5950458A true JPS5950458A (en) 1984-03-23

Family

ID=15723957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16086182A Pending JPS5950458A (en) 1982-09-17 1982-09-17 Formation of electrostatic latent image

Country Status (1)

Country Link
JP (1) JPS5950458A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4757343A (en) * 1984-11-30 1988-07-12 Mita Industrial Co., Ltd. Electrostatic image output apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4757343A (en) * 1984-11-30 1988-07-12 Mita Industrial Co., Ltd. Electrostatic image output apparatus

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