JPS58139160A - Image forming element and image forming method using this element - Google Patents
Image forming element and image forming method using this elementInfo
- Publication number
- JPS58139160A JPS58139160A JP1978882A JP1978882A JPS58139160A JP S58139160 A JPS58139160 A JP S58139160A JP 1978882 A JP1978882 A JP 1978882A JP 1978882 A JP1978882 A JP 1978882A JP S58139160 A JPS58139160 A JP S58139160A
- Authority
- JP
- Japan
- Prior art keywords
- image
- electrode
- light
- layer
- image forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/04—Apparatus for electrographic processes using a charge pattern for exposing, i.e. imagewise exposure by optically projecting the original image on a photoconductive recording material
- G03G15/04036—Details of illuminating systems, e.g. lamps, reflectors
- G03G15/04045—Details of illuminating systems, e.g. lamps, reflectors for exposing image information provided otherwise than by directly projecting the original image onto the photoconductive recording material, e.g. digital copiers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electrophotography Using Other Than Carlson'S Method (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は画像形成素子、特に持続光導電性層の抵抗変化
による分配電圧の差を利用して電位像を形成するための
ll1i緻形成素子及びその素子を用いるlIi像形成
方法に関する。さらにまた本発明は1回の露光で複数枚
の複写が出来、くり返し使用可能な1iif11形成素
子及び画像形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an image forming element, particularly an ll1i fine-forming element for forming a potential image by utilizing a difference in distributed voltage due to a resistance change of a persistent photoconductive layer, and an lli image using the element. Regarding the forming method. Furthermore, the present invention relates to an 1iif11 forming element and an image forming method that can make a plurality of copies with one exposure and can be used repeatedly.
従来、−橡や文書等を複写する最も一般的な方法として
、光導電性感光体を帯電、露光して形成した静電潜像を
トナーで現像後、転写紙に転写、定着するゼログラフィ
ー法が知られて−る。この方法に用いられる感光体は導
電性支持体上に光導電性層が設けられてiる。光導電性
層はS@及びS・、T・、ム畠等の合金を真空蒸着して
形成されるか、あるiはZoo 、 Cam%TI%等
の無機光導電体を絶縁性結着剤中に分散、Iklして形
成される。静電潜像は一般にコロナ放電により感光体表
1jit−−INK帯電した後、lli鐙露党により露
光部の電荷を選択的に消失させて形成される。この静電
fII橡は潜像と反対極性に帯電したトナーで現f11
された後、トナー像は転写紙に転写、定着される。この
ような電子写真流ではコロナ帯電を行うためのコロナワ
イヤーやシ−ルドケース、コロナ放電用高圧電源等を必
要とするため、装置の小型化が困峻である。さらにコロ
ナワイヤーの汚れにより画質が劣化したり信頼性が低下
したりする。Conventionally, the most common method for copying books, documents, etc. is the xerography method, in which an electrostatic latent image is formed by charging and exposing a photoconductive photoreceptor, then developed with toner, and then transferred and fixed onto transfer paper. is known. The photoreceptor used in this method has a photoconductive layer provided on a conductive support. The photoconductive layer is formed by vacuum deposition of an alloy such as S@ and S., T., Muhata, etc., or an inorganic photoconductor such as Zoo, Cam% TI%, etc. with an insulating binder. It is dispersed and formed by Ikl. An electrostatic latent image is generally formed by charging the surface of the photoreceptor by corona discharge and then selectively eliminating the charge in the exposed area using a stirrup. This electrostatic fII is a toner charged with a polarity opposite to that of the latent image.
After that, the toner image is transferred and fixed onto transfer paper. This type of electrophotography requires a corona wire, a shield case, a high-voltage power source for corona discharge, etc. for corona charging, and therefore it is difficult to miniaturize the apparatus. Furthermore, contamination of the corona wire deteriorates image quality and reduces reliability.
このような従来の電子写真法の欠点を改善するため、コ
ロナ帯電を必要としない感光体が特開昭48−6823
8号公報、特開昭51−150342号公報、4I開昭
53−1027号公報、特開昭54−61534号公報
、%開明54−61537号公報等に開示されてiる。In order to improve these drawbacks of conventional electrophotography, a photoreceptor that does not require corona charging was developed in Japanese Patent Application Laid-Open No. 48-6823.
8, Japanese Patent Application Laid-Open No. 51-150342, 4I Publication No. 53-1027, Japanese Patent Application Laid-Open No. 54-61534, Japanese Patent Application Publication No. 54-61537, etc.
これらの感光体はコロ′す帯電を必要とせずに荷電トナ
ーによる現像が可能な電位像を形成する事ができるもの
である。電極が設けられている光導電層に電圧を印加し
て51m1露党を行ない露光部と非露光部において、分
配電圧の差を作る事によって電位像を形成するものであ
る。この電位像を形成する方法においては、光導電性層
の抵抗変化によってMill可能な1:′
電位像を形成するので、感光体に対する電圧印加、Il
i像露光およびS歳を同時に行う必要があり懐置土制約
を伴なう。These photoreceptors are capable of forming a potential image that can be developed with charged toner without requiring continuous charging. A potential image is formed by applying a voltage to a photoconductive layer provided with an electrode and performing an exposure of 51 m1 to create a difference in distributed voltage between exposed and non-exposed areas. In this method of forming a potential image, a millable 1:' potential image is formed by changing the resistance of the photoconductive layer.
It is necessary to perform i-image exposure and S-image exposure at the same time, which is accompanied by restrictions.
本発明は以上のような従来の電子写真法の欠点を除き、
コロナ帯電を必要とせず、電圧印加した状態で露光を行
った後Kit像する事を可能とした画像形成素子及び画
像形成方法を提供する事を目的とする。ざらに本発明は
くり返し使用可能なlii橡形成素子及び画像形成方法
を提供する事を目的とする。さらに本発明は透明支持体
を必要とせず、露光と現像をIii像形成素子の同じ側
から行う事を可能としたiii*形成素子及び画像形成
法を提供する事を目的とする。The present invention eliminates the drawbacks of the conventional electrophotographic method as described above,
An object of the present invention is to provide an image forming element and an image forming method that do not require corona charging and can perform kit imaging after exposure with a voltage applied. Broadly speaking, it is an object of the present invention to provide a Lii square forming element and an image forming method that can be used repeatedly. A further object of the present invention is to provide a III* forming element and an image forming method that do not require a transparent support and allow exposure and development to be performed from the same side of the III image forming element.
本発明の目的は画素を形成する遮光性部分及び遮光性部
分を有力孤立した導電体、光照射によって導電度が変化
し、その変化が光照射後も持続する層、即ち持続光導電
性層及び電極を有する事を特徴とするIm像形成素子、
及びこの画像形成素子の電極に電圧を印加する工程、1
1ifII露光を行う工程及び画像露光後に現像する工
程からなる事を特徴とする1mfI&形成方法により達
成される。ざらに本発明の目的は画像形成素子を脇熱す
る工程を有する事を特徴とするlI會影形成方法より達
成される。The object of the present invention is to provide a layer that forms a pixel-forming light-shielding part and a light-shielding part with a strong isolated conductor, a layer whose conductivity changes upon irradiation with light, and whose change persists even after irradiation with light, that is, a persistent photoconductive layer. Im image forming element characterized by having an electrode,
and a step of applying a voltage to the electrodes of this image forming element, 1
This is achieved by a 1mfI & forming method characterized by comprising a step of performing 1ifII exposure and a step of developing after image exposure. Broadly speaking, the object of the present invention is achieved by a method for forming an II image, which is characterized in that it includes a step of heating the image forming element sideways.
本発明においては、電極が設けられてhる持続光導電性
層に電圧を印加し*像露光を行う参により持続光導電性
層の露光部における抵抗の変化によって露光部と非露光
部とで分配電圧の差を作り、この分配電圧6差に対応し
て生ずる画像形成素子の表面電位の差により電位像を形
成するものである。この電位像はli會露光後において
も保持されており、画像露光後にll像する事ができる
。また電圧印加は画像露光と同時に行ってもよいし、画
像露光の後に行ってもよい、またIIiI露光と現像は
画像形成素子の同一側面で行う事ができ装置の構成が簡
単になる。In the present invention, by applying a voltage to the persistent photoconductive layer provided with an electrode and performing imagewise exposure, the exposed and unexposed areas of the persistent photoconductive layer are differentiated by a change in resistance in the exposed area. A potential image is formed by creating a difference in divided voltages and using a difference in surface potential of the image forming element that occurs in response to this difference in divided voltages. This potential image is retained even after the li exposure, and can be made into an ll image after the image exposure. Further, the voltage application may be performed simultaneously with the image exposure or after the image exposure, and the IIIiI exposure and development can be performed on the same side of the image forming element, which simplifies the structure of the apparatus.
以丁、図面に基づき本発明な詳1111KllI!明す
る。Hereinafter, details of the present invention based on the drawings will be described. I will clarify.
本発明によるii画像形成素子代表的な構成を第1図に
示す。ii*形成素子lは支持体2、第1電[13、第
2電[14、持続光導電性層5、透光性部分11と遮光
性部分12を有する孤立導電体10、透明絶縁層13か
らなり、孤立導電体毎に1対の第1電極3と第2電41
14が設けられている。支持体2は絶縁性であり、持続
光導電性層よりも抵抗が^くなければならな1.具体的
には、ガラス、樹脂等で形成される。ag1電極3及び
第2電極4は支持体2上に形成されたパターン状電極で
あり、その形状は112図に示すようなくし薯状になっ
ている。第it極3及び嬉2電極4は種々の方法により
形成される。その代表的なm法は蒸着と7オトレジスト
を用いたエツチングによる方法である。この方ff1K
よれば、支持体の表INK第1電極3及び第2電極4を
形成する材料を蒸着した後フォトレジストを利用してく
し屋電極のマスキングパターンを形成し、次いで所定の
エツチング液を用いて電極材料層を選択的に工、チンダ
除去した後、フォトレジストのマスキングパターンを除
去して嬉1電極3及び第2電極4ができる。第1電極3
及び第2電li4の材料としては、!町01、Smog
等の金属酸化物あるいはムt、U、ハ、Z*a、組、A
m、Cr、Me、1載Nb、 Ta%U、 TI、 P
i等の各種金属が用いられ、蒸着、スパッタリング等に
より層状に形成される。フォトレジストとしては一般に
市販されているもの、例えばコダック製KPRが使用で
きる。第1電極3及び第2電極4を形成する他の方法と
しては、くし層状の開口部を有するマスクを介して電極
材料を蒸着する方法も使用できる。A typical configuration of the II image forming element according to the present invention is shown in FIG. ii* Forming element l includes a support 2, a first electrode [13], a second electrode [14], a persistent photoconductive layer 5, an isolated conductor 10 having a light-transmitting part 11 and a light-blocking part 12, a transparent insulating layer 13 consisting of a pair of first electrode 3 and second electrode 41 for each isolated conductor.
14 are provided. 1. The support 2 must be insulating and more resistive than the persistent photoconductive layer. Specifically, it is made of glass, resin, or the like. The ag1 electrode 3 and the second electrode 4 are patterned electrodes formed on the support 2, and have a comb-like shape as shown in FIG. 112. The it-th electrode 3 and the second electrode 4 are formed by various methods. A typical m method is a method using vapor deposition and etching using a 7-photoresist. This person ff1K
According to the method, after the materials forming the INK first electrode 3 and the second electrode 4 are deposited on the surface of the support, a masking pattern of the Kushiya electrode is formed using a photoresist, and then a predetermined etching solution is used to remove the electrodes. After selectively etching and removing the material layer, the photoresist masking pattern is removed to form the first electrode 3 and the second electrode 4. First electrode 3
And as a material for the second electric li4,! Town 01, Smog
Metal oxides such as Mut, U, Ha, Z*a, Group, A
m, Cr, Me, 1-Nb, Ta%U, TI, P
Various metals such as i are used and formed into layers by vapor deposition, sputtering, etc. As the photoresist, commonly available ones, such as KPR manufactured by Kodak, can be used. As another method for forming the first electrode 3 and the second electrode 4, a method of vapor depositing the electrode material through a mask having comb-layered openings can also be used.
第1電fi3及びII2電1に4の厚みはtool〜5
一種度である。第1電極3及び第2電極4が形成された
後持続党導電性層5が形成される。The thickness of 1st electric fi3 and II2 electric 1 to 4 is tool~5
It is one degree. After the first electrode 3 and the second electrode 4 are formed, a sustaining conductive layer 5 is formed.
持続光導電層は持続光導電性を有している層であり、好
ましくは−に熱解放性をも有している1−が曳い。ここ
で言う持続光導電性とは光照射により導電率が変化し、
光照射を断った後も一定時間以上導電率の変化が持続す
る現り言う。籍に光照射を受けた部分の導電率(PL)
と光照射を受けない部分の導電率(デD)の比h/−が
10以上である導電率変化を生じるものが好ましく、こ
の導電率変化は・持続光導電性の持続時間が想定するi
li橡記碌より充分長い持続時間を持つ光導電材料が良
く、−律に定められないが、少なくとも加秒以上、好ま
しくは1分以上変化した導電率が持続するのが* v”
s又熱解放性とは加熱もしくは赤外線照射により励起
状態が解放され導電率が暗部状態に戻る現象をiう。熱
解放性に関しては装置内の温度及び加熱装置を考慮して
約60℃以上で熱解放性が生じる光導電材料がjL%A
、このような持続光導電性及び熱解放性を示す光導電材
料としては酸化亜鉛、二酸化チタン、ポリビニルカルバ
ゾール類等が挙げられる。これらの光導電材料には増感
の為に染料、酸等の増感剤を含ませてもよ一0代表的な
増感色素としてはトリフェニルメタン系、シアニン系、
中ナンテン系色素があげられる0代表的な増感用の酸と
しては平ノy類、カルボン酸、カルボン酸無水物、フェ
ノール類郷があげられる。The sustained photoconductive layer is a layer that has sustained photoconductivity, preferably containing a layer 1 that also has heat release properties. The term "sustained photoconductivity" here refers to the change in conductivity due to light irradiation.
This refers to a phenomenon in which changes in conductivity persist for a certain period of time even after light irradiation is cut off. Electrical conductivity (PL) of the part exposed to light irradiation
It is preferable that the conductivity change is such that the ratio h/- of the conductivity (D) of the part and the part that is not exposed to light irradiation is 10 or more, and this change in conductivity is determined by: i
It is preferable to use a photoconductive material that has a sufficiently longer duration than that of a photoconductive material, and it is preferable to use a photoconductive material that maintains a change in conductivity for at least one second, preferably one minute or more, although this is not a rule.
Thermal release property refers to a phenomenon in which the excited state is released by heating or infrared irradiation, and the conductivity returns to the dark state. Regarding heat release properties, photoconductive materials that exhibit heat release properties at temperatures above about 60°C are jL%A, taking into account the temperature inside the device and the heating device.
Examples of photoconductive materials exhibiting such sustained photoconductivity and heat release properties include zinc oxide, titanium dioxide, polyvinyl carbazoles, and the like. These photoconductive materials may contain sensitizers such as dyes and acids for sensitization. Typical sensitizing dyes include triphenylmethane, cyanine,
Typical sensitizing acids include common sensitizing acids, carboxylic acids, carboxylic acid anhydrides, and phenols.
酸化亜鉛、二酸化チタン等の分散製光導電材料はポリエ
ステル樹111アクリル樹脂、シリコ 1ン樹
噌、アルキ、ド樹脂、エポキシ樹脂、ウレメン樹脂、ブ
タジェン−スチレン11Fli、イミド樹脂、シリコン
−ブタジェン樹脂等のバインダー中に&−ルミル分散機
、超音波分散機等の分散手段により分散した塗布液を塗
布して持続光導電層を形成する。持続光導電性45の厚
さは通常500λ〜100声程度である。持続光導電性
層5の上に孤立導電体10が形成される。孤立導電体1
0は遮光性導電材料、例えばl−0@ 、S+a01等
を島状に形成した後、遮光性導電材料を上記透光性導′
鑞体と一部が重なるように形成する事によって作られる
。遮光性導電材料としては、kA、At、 Wb、Z*
、Nl 、Lm等の各種金属が使用できる。孤立導電体
lOは、第1電極3、又は第2電1i4と同様の方法で
形成される。孤立導電体10は不連続な島状導電体であ
り、形成されるlii嫌の画素となる。孤立導電体の形
状の例を第3図及びls4図に示すが、これらの形状に
限られるものではなく他の形状でもよめ。Dispersed photoconductive materials such as zinc oxide and titanium dioxide can be used in polyester resins such as 111 acrylic resins, silicone resins, alkylene resins, epoxy resins, uremene resins, butadiene-styrene 11Fli, imide resins, silicone-butadiene resins, etc. A coating liquid dispersed in a binder using a dispersing means such as a &-Lumill dispersion machine or an ultrasonic dispersion machine is applied to form a sustained photoconductive layer. The thickness of the sustained photoconductor 45 is typically about 500 λ to 100 tones. A lone conductor 10 is formed over the persistent photoconductive layer 5. isolated conductor 1
0 is a light-shielding conductive material, such as l-0@, S+a01, etc., which is formed into an island shape, and then the light-shielding conductive material is formed into the above-mentioned light-transmitting conductive material.
It is made by forming it so that it partially overlaps with the solder body. Light-shielding conductive materials include kA, At, Wb, Z*
, Nl, Lm, etc. can be used. The isolated conductor lO is formed in the same manner as the first electrode 3 or the second electrode 1i4. The isolated conductor 10 is a discontinuous island-shaped conductor, and becomes a pixel that is not formed. Examples of the shape of the isolated conductor are shown in FIGS. 3 and 4, but the shapes are not limited to these and other shapes may be used.
以上述べたlj嫌影形成素子用iて電位像を形成する方
法を第5図により説明する。第1電極3と第2電極4は
電−(17を介して電気的にりながれている。この状態
で孤立導電体側から原稿8を通してms露光を行うと、
光照射を受けた部分と受けない部分で孤立導電体の電位
が異なり、原稿に応じた電位像が形成される。第5図の
等価回路を第6図に示す。電源7による印加電圧がV−
であり、第2電極4と孤立導電体lOの間の抵抗が11
.第1電極3と孤立導電体1oの間の抵抗がR8である
。孤立導電体10の電位V。A method of forming a potential image using the above-mentioned shadow forming element will be explained with reference to FIG. The first electrode 3 and the second electrode 4 are electrically connected via the conductor (17). In this state, when ms exposure is performed through the original 8 from the isolated conductor side,
The potential of the isolated conductor differs between the portions that are irradiated with light and the portions that are not, and a potential image that corresponds to the original is formed. An equivalent circuit of FIG. 5 is shown in FIG. The voltage applied by the power supply 7 is V-
, and the resistance between the second electrode 4 and the isolated conductor lO is 11
.. The resistance between the first electrode 3 and the isolated conductor 1o is R8. Potential V of isolated conductor 10.
は孤立導電体10と第1電1i3の間の電圧であり、次
式(1)で表わされる。is the voltage between the isolated conductor 10 and the first voltage 1i3, and is expressed by the following equation (1).
電圧Vaを印加した状態で孤立導電体側から画瞭露党を
行うと、露光部では孤立導電体の遮光部分12は光が持
続光導電性層5に達しないため第2電極4と孤立導電体
lOとの間の抵抗−は変化しない、tた孤立導電体の透
光性部分11は光が持続光導電性層に達するため第1電
[3と孤立導電体10との間の抵抗−は減少し、上式に
従−孤立導電体の電位も減少する。一方非露党部ではR
1、−共に変化しないので孤立導電体の電位も変化しな
い。以上により、感光部では電位が低くなった電位像が
形成される。このようにして形成された電位像は、電子
写真における通常の現像方法により現像され、転写紙に
転写される。本発明の画像形成素子は持続党導電性層を
用いているため、光照射後も電位鐵が形成されており、
amを露光と同時に行なう必要がないため、懐置上の制
約が少ない。また露光と現像はiずれも孤立導電体側で
できるため装置の構成が簡墨になる。また持続光導電性
が消失しない限り現像できるので1回の露光で複数枚の
複写を得る事も可能である。新たなlii橡を形成する
IIKは、Ii像形成素子を暗所放置した後あるいは加
熱した後くり返し使用される。加熱条件は使用される持
続性党導電性層の特′性によるが、50〜200℃程度
が好ま、し1゜本発明による感光体は、第1図に示され
る構成のはかに種々の構成が考えられる。前記式中によ
れば抵抗l、を小さくする事によりコントラストが大き
くなる。When clear exposure is performed from the isolated conductor side with voltage Va applied, the light does not reach the continuous photoconductive layer 5 in the light-shielding portion 12 of the isolated conductor in the exposed area, so that the second electrode 4 and the isolated conductor The resistance between the first electrode and the isolated conductor 10 does not change, and the light-transmitting part 11 of the isolated conductor remains unchanged since the light reaches the photoconductive layer. According to the above equation, the potential of the isolated conductor also decreases. On the other hand, in the non-Russian party
1 and - do not change, so the potential of the isolated conductor also does not change. As a result, a potential image with a lower potential is formed in the photosensitive portion. The potential image thus formed is developed by a normal developing method in electrophotography and transferred to transfer paper. Since the image forming element of the present invention uses a persistent conductive layer, a potential iron is formed even after light irradiation.
Since it is not necessary to perform AM at the same time as exposure, there are fewer restrictions on placement. In addition, since exposure and development can be performed on the isolated conductor side even if there is an i shift, the configuration of the apparatus can be simplified. Furthermore, since development is possible as long as the continuous photoconductivity does not disappear, it is possible to obtain a plurality of copies with one exposure. IIK to form a new lii square is used repeatedly after leaving the li image forming element in a dark place or after heating it. The heating conditions depend on the characteristics of the long-lasting conductive layer used, but are preferably about 50 to 200°C. There are several possible configurations. According to the above equation, the contrast increases by decreasing the resistance l.
次に実施例を挙げて本発明を説明する。Next, the present invention will be explained with reference to Examples.
実施例 l
ガラス基板上にメタルマスクを介して約20001の厚
さで態を蒸着し、中50μ、ピッチ250μのくし型第
1電極及び巾100JI、ピッチ250μの(し瀝第2
電極を形成した。Example l A comb-shaped first electrode with a thickness of about 20,001 mm and a width of 100 JI and a pitch of 250 μm was deposited on a glass substrate through a metal mask.
An electrode was formed.
次K Z+aO粉末を%重量部、粘着剤としてアクリル
樹脂10重量部及び少量のローズベンガル(ZaOK対
しQ、1wtfi)、少量のステアリン鍛鋼(2論OK
対し01 wt91G )を中シレンと共に分散した塗
料を上記電極基板上に塗布し乾燥して持続党導電性層を
形成した。持続党導電性噛の膜厚は約1011Iであっ
た。さらにその上にメタルマスクな介してIn10gの
孤立導電体を約2000 Jlの厚さで形成した。さら
に一部が1m、O,の孤立4111hlrz4・1・・
、、5KL″Cvxzt−*t、−’cmo 。Next K Z + aO powder in % parts by weight, 10 parts by weight of acrylic resin as adhesive and a small amount of rose bengal (Q for ZaOK, 1 wtfi), a small amount of stearin forged steel (2 theories OK)
On the other hand, a paint in which 01wt91G) was dispersed together with silane was applied onto the electrode substrate and dried to form a continuous conductive layer. The film thickness of the continuous conductive film was about 1011I. Further, an isolated conductor of 10 g of In with a thickness of about 2000 Jl was formed thereon via a metal mask. Furthermore, some parts are 1m, O, isolated 4111hlrz4・1...
,,5KL''Cvxzt-*t,-'cmo.
孤立導電体を約1ooo 1の厚さで形成した。The isolated conductor was formed to a thickness of about 1001 mm.
以上の方法により作られたli像形成素子の各電極の大
きさは5112m及び第481におめてほぼ次の値を示
すものであった。1=50μ、 b=xs。The size of each electrode of the Li image forming element manufactured by the above method was approximately the following value in 5112m and 481st. 1=50μ, b=xs.
声、C=100*、4 x s z 22571、f=
gx25#%hx125s、轟=100J1゜上記1i
ivIl形成素子のg1電極3をアースし、第2電極福
にsoo vの電圧を印加し、孤立導電体側から露光後
二成分乾式現像剤により現像した所、非露光部の孤立導
電体にトナーが付着し、画像が得られた。Voice, C=100*, 4 x s z 22571, f=
gx25#%hx125s, Todoroki=100J1゜1i above
The g1 electrode 3 of the ivIl forming element was grounded, a voltage of soo v was applied to the second electrode, and after exposure from the isolated conductor side, development was performed using a two-component dry developer. It adhered and an image was obtained.
現像されたトナー像を暗所で転写紙に転!を後、露光を
行わずに再度IA像した所、1@目と同様のlji像が
得られた。このIm像形成素子をクリー二ンダ後約10
0℃の温度で加熱し再び同様のテストを行なった所、#
−〇11僚は完全に消えており、(り返し使用する事が
出来た。Transfer the developed toner image onto transfer paper in a dark place! After that, an IA image was taken again without exposure, and an lji image similar to the first image was obtained. After cleaning this Im image forming element, approximately 10
When the same test was performed again after heating at a temperature of 0℃, #
-〇11 staff had completely disappeared, and I was able to use them repeatedly.
実施例 2
実施例1と同一のiii像形成素子を用い、孤立導電体
側から露光した後、第1電極3をアースし第2電fi4
KsOOVの電圧を印加し二成分乾式iA像剤により3
J像した所、非両像部の孤立導電体にトナーが付着し画
像が得られた。17A像されたトナー像を暗所で転写紙
に転写後露光な行わずに再度11@した所、fil目と
同様の画像が得られた。この画像形成素子なりリーニン
グ後約100℃の温度で加熱し、再び同様のテストを行
った所、前回の画像は完全に消えており、くり返し使用
する事ができた。Example 2 Using the same III image forming element as in Example 1, after exposing from the isolated conductor side, the first electrode 3 was grounded and the second electrode fi4
3 by applying a voltage of KsOOV and using a two-component dry iA imager.
When performing a J image, toner adhered to the isolated conductor in the non-image area, and an image was obtained. When the 17A toner image was transferred to a transfer paper in a dark place and then subjected to 11@ again without being exposed to light, an image similar to the filth image was obtained. When this image forming element was heated at a temperature of about 100° C. after cleaning and the same test was performed again, the previous image completely disappeared and it was possible to use it repeatedly.
第1図は本発明による画像形成素子の基本構成を示す断
面図であり、112図は本発明の11f11形成素子の
電極を示す模式図であり、第3vIA及び第4図は本発
明の画像形成素子の孤立導電体の形状例であり、第5図
は本発明のIli@形成素子を用いるlii瞭形成法の
説明図であり、第61g1は第5図の等価回路図である
。
図中符号:
1・・・thi像形成素子;2・・・支持体;3・・・
第1電極;4・・・第2電極;5・・・持続党導電性層
;7・・・電極;8・・・原稿;9・・・光源;10・
・・孤立導電体;112′14
113 図1 第 4 間第
5 回
第 6 図FIG. 1 is a sectional view showing the basic configuration of the image forming element according to the present invention, FIG. 112 is a schematic diagram showing the electrodes of the 11f11 forming element according to the present invention, and FIGS. This is an example of the shape of an isolated conductor of an element, and FIG. 5 is an explanatory diagram of a lii formation method using an Ili@ formation element of the present invention, and 61g1 is an equivalent circuit diagram of FIG. 5. Symbols in the figure: 1...thi image forming element; 2...support; 3...
1st electrode; 4... Second electrode; 5... Sustaining conductive layer; 7... Electrode; 8... Document; 9... Light source; 10.
...Isolated conductor; 112'14 113 Figure 1 4th interval 5th Figure 6
Claims (1)
層5及び連続した領域内に遮光性部分と遮光性部分を有
する孤立導電体からなることを特徴とする画像形成素子
。 り支持体2、嬉l電極3と第2電極4、持続光導電性層
5及び連続した領域内に遮光性部分とS光性部分を有す
る孤立導電体からなる画家形成素子の第1電極と#I2
電極に電圧を印加する工程、孤立電極側からlii像露
光を行う工程及びll像優に現像を電う工程からなるこ
とを特徴とするlii像形成方法。[Claims] The invention is characterized by comprising a support 2, a first IE electrode 3 and a second electrode 4, a persistent photoconductive layer 5, and an isolated conductor having a light-shielding portion and a light-shielding portion in a continuous region. An image forming element. A first electrode of a painter-forming element consisting of a support 2, a first electrode 3 and a second electrode 4, a persistent photoconductive layer 5, and an isolated conductor having a light-shielding portion and a light-sensitive portion in a continuous region; #I2
A method for forming a LII image, comprising the steps of applying a voltage to an electrode, exposing the LII image from the isolated electrode side, and developing the LII image.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1978882A JPS58139160A (en) | 1982-02-12 | 1982-02-12 | Image forming element and image forming method using this element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1978882A JPS58139160A (en) | 1982-02-12 | 1982-02-12 | Image forming element and image forming method using this element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58139160A true JPS58139160A (en) | 1983-08-18 |
Family
ID=12009071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1978882A Pending JPS58139160A (en) | 1982-02-12 | 1982-02-12 | Image forming element and image forming method using this element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58139160A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0342968A2 (en) * | 1988-05-17 | 1989-11-23 | Dai Nippon Printing Co., Ltd. | Method for recording and reproducing information, apparatus therefor and recording medium |
US5204198A (en) * | 1991-10-28 | 1993-04-20 | Eastman Kodak Company | Photoelectrographic elements utilizing nonionic sulfonic acid photogenerators |
-
1982
- 1982-02-12 JP JP1978882A patent/JPS58139160A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0342968A2 (en) * | 1988-05-17 | 1989-11-23 | Dai Nippon Printing Co., Ltd. | Method for recording and reproducing information, apparatus therefor and recording medium |
EP0714093A2 (en) * | 1988-05-17 | 1996-05-29 | Dai Nippon Printing Co., Ltd. | Method for recording and reproducing information, apparatus therefor and recording medium |
EP0714093A3 (en) * | 1988-05-17 | 1996-06-05 | Dainippon Printing Co Ltd | |
US5204198A (en) * | 1991-10-28 | 1993-04-20 | Eastman Kodak Company | Photoelectrographic elements utilizing nonionic sulfonic acid photogenerators |
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