JPS5946081A - Buried type semiconductor laser having periodic structure - Google Patents

Abstract

PURPOSE:To enable to obtain a high intense laser oscillation with favorable efficiency for a long period by a method wherein the sides of a stripe type laminate on a semiconductor substrate are formed as to construct uneven faces repeating the recess and the protrusion with the prearranged period in the extended direction thereof. CONSTITUTION:The stripe type laminate 2 constructed by laminating an active layer 3 and a clad layer 4 is formed on the semiconductor substrate 1. Moreover burying layers 7 are formed on the substrate 1 adjoining to the sides of the laminate 2. At construction like this, the sides of the laminate 2 are formed of the uneven faces 21 repeating the recess and the protrusion with the prearranged period (lambda) in the extended direction of the laminate 2 thereof. According to this construction, because the uneven faces 21 are formed on the sides of the laminate, transformed formation of the uneven faces 21 thereof is not generated. Accordingly, at the case of the semiconductor laser thereof, the expected characteristic is exhibited extending over the long period, and the high intense laser oscillation can be obtained with favorable efficiency.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a push-in type semiconductor laser with internal periodicity (
This invention relates to a method for manufacturing a 1' conductor relay 11 having a periodic structure (1 filter embedded type) with 111 dielectrics and 1J.

In the recessed type semiconductor laser, a striped laminate is formed on a semiconductor substrate, in which a plurality of semiconductor layers including at least b active (II, Ii, and i) are laminated, and a buried layer is stacked on the semiconductor substrate. τ is formed by connecting to the side surface of the live laminate,
The configuration is as follows.

A buried semiconductor laser having such a structure has a striped stacked structure (because the width of the active I11 layer in b is narrow,
The feature on the right is that laser oscillation can be performed in the A-transverse mode C1-7.

Furthermore, the above-mentioned buried type semiconductor laser having a periodic structure of 414 times has an internal period of I7/1i.
ji, so in the insect's modulation motion 11r, b
, the above-mentioned Rayleigh oscillation is internally set at a period of 1. Compared to a "push-in type semiconductor laser" which does not have 1 structure and 1 structure, it has the characteristic that it can perform 1q movement in stable <7A-longitudinal mode and stable single-transverse mode at 3 degrees to the right. , the conventional embedded semiconductor relay If having the above-mentioned structure A1, circumference J:4 has a predetermined period (repeating unevenness, Semiconductor layer 1-(J) having an internal periodic structure due to the formation of other semiconductor layers (
There are 111 formations for N<, through C.

For this reason, such an embedded type 16 having a periodic structure
The conductor relay is formed by a first step of forming a first ``1'' layer on a semiconductor substrate, and a J-tzing process in which the first ``1'' layer is formed. 1st half'4
From the 1+ layer, a second semiconductor layer having an uneven surface that repeats unevenness at a predetermined period is formed, and then a second semiconductor layer having the uneven surface is formed. A third semiconductor layer is formed on the photolayer by a liquid phase epitaxial deposition method to form a first laminate, and then a first laminate is formed on the photolayer. The fourth step is to form a striped laminate, and then a embedding layer is formed on the semiconductor substrate. of,
Strive-like fr! j) manufactured using a manufacturing method that includes a fifth step of forming and covering the side surface of the G body;
U) It has been removed.

However, in contrast to 41, such a structure θ is suitable for implantation 1ii
j 4. Forming a semiconductor layer outside the culm ()”
Therefore, two steps are required to form the first and third semiconductor layers, and the second semiconductor layer 51k, the second semiconductor layer 14, and the striped stacked layer (.) are required. L that undergoes two etching processes (1 culm v2, ?, 7 is a lot) -
It takes time! I have.

Therefore, in the case of a buried type semiconductor laser with a conventional period (1,j structure) as shown above, it is easy to change which period (1''+1 structure) of a buried type semiconductor laser with a 11- r(i' L, t)
there was.

In addition, in the case of the manufacturing method described above, lj
The second step of forming the
≦J for cold fever when the body layer is formed.

-), the edged uneven surface of the second semiconductor layer is deformed.

In addition, when the surface of the second semiconductor (4V layer forms the third semiconductor layer), the uneven surface of the second semiconductor layer is deformed by melting back in one day. .

Therefore, l-the conventional circumference +! I + (1η structure based on the platform of the embedded type semiconductor relay, its period (b1 structure is f)) The embedded type: F 3# body Ray
f! I was annoyed by the lack of 81.1, which was difficult to manufacture due to the lack of FF111.

Therefore, the present invention provides a new method that does not lack the above-mentioned defects.
) /I: , a push-in type semiconductor relay IJ'' having a period Gl'l structure is proposed.

b) Figures 1A to 1C show an example of a buried semiconductor laser having a periodic structure according to the present invention.
A semiconductor substrate 1, which serves as a cladding layer made of, for example, lnp, is placed on the right side.

Thus, on the semiconductor substrate 1, a stone-r-shaped (?i-layer pot 2) is formed in which a plurality of 21' conductor layers including at least 6111 layers are laminated.

As shown in the figure, an example of the striped laminated layer 2 includes an active 111 layer 3 made of, for example, GarnAsP, a cladding layer 1 made of P-type, for example, TnP, and the like. The structure formed by the fiIJ layer is shown on the right. Although the two sides are <T, the other end face 6 is Fabrype [1
- A reflective surface is formed on the upper surface of the cladding layer 4, and shallow stripes 13 are formed on the upper surface of the cladding layer 4.

Further, on the semiconductor substrate 1, the pushing layer 7 is formed in a stripe shape f+! (on the side of the 1-layer body 2) 11! They are formed in contact with each other.

In this case, an example of the pressing layer 7 is an example of [) type λ, I n
The body part 8 made of Pt' and the body part 9 made of InP, for example, of N type, are laminated in the order of the layers, and then the body part 8 is made. The interface between the cladding layer 4 and the body 9 is formed so that its surface is approximately the same as the top surface of the cladding layer 4. At 1° 1), there is a striped stack 1 of 79 "l" substrates 1.
On the surface opposite to the E 2 side, an electrode 10 is arranged in a striped pattern (on the 1-layer original 2 and the embedding layer 70, continuous between them). (The extended electrode 11 is at A-mic f=IcS.

In the case of a double series 474 structure, the 111 structure is C, similar to the structure found in a conventional push-in type semiconductor relay without a periodic structure.

At tY-r, the shoreline explanation is omitted, but the periodic structure l
If the id is (j), the function as an embedded semiconductor relay 1f, which does not have period forgery, similar to the embedded regular half 9 (Holley), is assumed.

However, in the embodiment of the embedded semiconductor layer having a periodic structure according to the present invention, 1) In the configuration shown in (e), the side surface of the striped laminate 2 in (i) is as follows. A constant period λ of t in the extending direction of the striped laminate 2
It consists of an uneven surface 21 that repeats unevenness.

1 is an example configuration of an embedded type 'l'j9K Rayleigh with periodicity 174) according to the present invention.

Next, an example of the manufacturing method of an embedded type ≧1' conductor relay with a periodic structure of <r l'l'l configuration as described above is shown in Fig. 2... Let us describe Figure 10 in terms of the equation r=).

Second...? d5 in Figure 10, and the corresponding part in Figure 1 is marked with the same symbol.

As shown in FIG.

However, on the half i9 f4V baseboard 1, there is a
B Ni shows 'J, Ga A31 system/doing active 1'
l E": :'+do, P-type I n P-('Isuriurado1sen11dowo-1dere itself is a well-known liquid phase-[P/71-Sitol 1~ Civil Code, J , J, layer 3 and layer 4 are stacked in that order (
Let layer f and layer 31 be formed.

Next, go to Figure 4A・C(3-show'?f,,l,u(5
-1 (Stripe-like shallow grooves 13 are formed on one surface of the cladding layer 4 constituting the I51i'/i body 31.
゜Next, go to Figure 5~C] 1, NJJ, Uni, jM 1
After that, a striped mask layer 35 and a layer 32, for example, a layer 32 of silicon oxide C', is applied to the surface 1- of the cladding layer 4 formed on the surface 3. For example, the sputtering method (formation 1) is used.

Next, Figure 6 A “□ C (J/IX!I=I: Sea urchin,
+; < 32-1, for example)/11.
.
- It is formed on the uneven surface 34 which repeats unevenness at a constant IZ period in the extending direction of each striped mask layer 33.

Next, step 1 to step 1 to remove the live mask layer 33.
1), as shown in FIGS.
Form a strip-shaped mask layer 35.

Next, after removing the live mask layer 33 from the surface of the mask layer 35,
1 on the laminated book 31 using the Nosk layer 35 as a mask
J-Ru, Ire itself is publicly known.
) (As shown in FIG.

In this case, the side surface of the striped laminate 2 is
′: lig shape (planned circumference in the extension direction of the 6-layer body 2!! II
C uneven surface 21'c/b with repeated unevenness, 1
-1) Formation.

Next (J, !17 i, (' body 1.t (on the opposite side, η, J, u (2, p 1. The embedding layer 7 has a structure in which 1 [1p (Naru 1, 1 part 9) are laminated in that order.
, the uneven surface 21 of the striped +i'+Ii''j body 2
It is formed by being connected to the side surface of the opening.

In this case, the embedding layer 7 is replaced with the layer 8118 at -,),'
The interface between the i'i part 9 is J, which is within the thickness of the cladding layer 11, and the upper surface is striped (i'i I
ff field 2 and (abbreviated) 7 are formed to have the same surface.

Next, 9 layers of striped 3 layers! After removing 20 or 15 stripes of the striped laminate, as shown in FIG.
, 12 on the opposite side - 1:: +; 2. The electrode layer 1° is formed by a method known per se (formation method), or 1. :, for striped laminate 2 and embedding); The electrode layer 11 extending over the ridge 7 is formed by itself (J, - in a known method); 11, live to 1 (＾FFJ '(4I2
The relative facing of *i (and 5 and (10,000 end faces 64-
, Fabry-Perrot's anti-134-doku "Rainy Uni,"
Formed on the l+n inclined surface.

As described below, an example of a 1' conductor 1 Holley is shown in FIG.

I. Therefore, according to the present invention, the two-periodic structure can be made into an embedded type.
An example configuration of I'-IQ lho-1r has been clarified.

+ 3Ji According to the structure of the indented semiconductor laser having a periodic structure according to the present invention, the uneven surface 21 formed on the side surface of the striped laminate 2 constitutes the striped laminate. A curved semiconductor layer is formed on the Tirji body layer 10, which lies on an uneven surface that repeats unevenness at a predetermined period.
(The periodic structure constituted internally in the conventional embedded semiconductor laser with the periodicity 17.li of the 74-structure structure) , forming a periodic structure.

i, Y, -> iK, -1 The recessed type semiconductor laser having a periodic structure described above has a period of 41+1, similar to the recessed type 1' conductor laser 11 having a conventional periodic structure. It is clear that the geometry can be obtained as the embedded half-hole quantity A when the structure is IJ1j.

In the case of the embedded semiconductor relay 1F according to the present invention, which has a periodic node 1 structure, which has been tested in the Figure 2..., No. 10
In the figure, it is described that J is produced and the first thing to be done! I can do it.

By the way, in the case of such IJA method, (1'1 layer i4
) 31 and one time to form the striped laminate 2. (In the process of taking the principle, we only need a culm for the embedding.) It is possible to make 1!

I'm excited about this invention, cycle 1?1
In the case of a buried type semiconductor laser with a blue color, a buried type semiconductor laser with a periodic structure is converted into a conventional 9-piece laser with a periodic structure. In comparison, C' is easier to manufacture than 1! In addition, in the case of an embedded semiconductor 1 with a period 411/1 included in the present invention, the period 17. The structure is striped (J-shaped on the side of the layered body) and has an uneven surface, so the 11η
Compared to the conventional manufacturing method of an embedded semiconductor having a periodic structure, the uneven surface constituting the periodic structure is not deformed. In the case of a buried type 21' conductor laser having a period of +1°11, a buried type semiconductor laser with a period of +1°11 can be easily manufactured as a device that fully exhibits the desired characteristics 111. A person has the characteristic of being too cute.

Note that in (above) E, the semiconductor substrate 1 acts on both the cladding layers, and a plurality of ゛1' conductive trees Fj including the active +4 layers (the striped laminate 2 with the white layer) , IllEη3 and cladding layer 4 have been described, but the first cladding layer or I,':j first
An embedded semiconductor 171V1 node has an IJ and a main layer, which has a structure in which an active layer, a second cladding layer, or a second active layer are laminated in that order. The invention can be applied to εY sign C.

Of course, in the configuration described above, the P type may be replaced with the N type, and the N type combined pJ (1,1) may be replaced.

In addition, various modifications and changes may be made without departing from the spirit of the present invention.

[Brief explanation of the drawing]

FIGS. 1A, B, and C show an example of a recessed type "l" 79 body model having a periodic structure according to the present invention. Cross-sectional view of line 1 and C-C
This is a cross-sectional view along the line. Figure 2, Figure 3, Figure 11, Figure 5, Figure 6, Figure 7,
Figures 8, 9, and 10 show an example of the manufacturing method of the hammered regular half and rib which have a periodic structure according to the present invention, and show the sequential steps ( In the figure, 8 is a plan view, [1t, 1. Child's D-111!+i l cross-sectional view, C
is a sectional view taken along line CC. 1... Semiconductor substrate 2...
・・・・・・・・・・・・Stripe-like (1-surrounding body 3
・・・・・・ ・・・・・・・・・ ) Archaic layer 4...
・・・・・・・・・・・・Clad layer 5.6・・・・・・
・・・・Summary 7・・・・・・・・・・・・Embedding layer 21・・・・
・・・・・・・・・・・・ Uneven surface 10.11 ・・・・・・
・Electrode layer 31......Laminated bodies 33, 35
...Stripe mask layer 34...
・・・・・・・・・Concave and convex surface M1 person, Japan Telegraph and Telephone Public Corporation, “Continued If-iTI document, December 30, 1980, Director General of the Special R'E Agency Name: Kazuo Sugi, Tono 1, Matters (1) Display Patent Application No. 15'735 of 1982
3 No. 2, Title of the invention Implantable semiconductor laser 3 having a periodic structure, relationship with the amendment company fl Patent applicant address 1-1-6 Uchisaiwai-cho, Chiyoda-ku, Tokyo 100 Name (/ 122) Nippon Telegraph and Telephone Public Corporation? , ]Representative: Makoto Fuji ↑0 4, Agent address: 5-7 Kojimachi, Chiyo 11-ku, Tokyo 102
Hidekazu Kioicho TBR No. 5, Supplement 11 - Roy of the Order "Voluntary amendment 6, vl/ of the invention increased due to the amendment, I゛Subject of the Schiff amendment Text for the description and drawings 8, Contents of the amendment Attachment Description 1, Title of the Invention Buried semiconductor laser with periodic structure 2, 'lFjγ'Claims?l' A plurality of semiconductor layers, including at least an active layer, are laminated on a dielectric substrate. A buried semiconductor laser in which a striped stacked body is formed, and a pushing layer is formed in connection with a side surface of the striped stacked body, wherein the side surface of the striped stacked body is connected to the side surface of the striped stacked body. 1. A buried semiconductor laser having a periodic structure characterized by an uneven surface that repeats unevenness at a predetermined period in the extending direction of a helicoidal laminate. 3. Detailed description of the invention The present invention relates to a buried semiconductor laser having a periodic structure, which has a periodic structure inside. In a buried semiconductor laser, a striped laminate in which a plurality of semiconductor layers including at least an active layer are stacked is formed on a semiconductor substrate, and a embedding layer is placed on the side surface of the striped laminate. The structure is that it is formed by [). . The buried semiconductor laser having such a configuration has the characteristic that the width of the 11 active layers in the striped stack is narrow, so laser oscillation can be achieved in the width-transverse mode. Ru. Further, in the above-mentioned buried semiconductor laser, the buried semiconductor laser having a periodic structure has a periodic structure inside, so that even during high-speed modulation operation, The above-mentioned laser oscillation can be obtained in a stable A-longitudinal mode and a stable A-transverse mode, compared to a buried semiconductor rake that does not have a periodic structure inside. . By the way, the conventional buried semiconductor lake having a periodic structure as shown in (a) above has (a) an uneven surface in which the upper surface is repeatedly uneven at a predetermined period on one side in the direction of the surface. A semiconductor layer on which a striped laminate is formed on a conductor substrate, the upper surface of which has an uneven structure in which the upper surface repeats unevenness in one direction at a predetermined period. Usually, a stripe-like stacked body is formed by forming semiconductor layers, and thus has a periodic structure inside. However, due to (a) mentioned above, if the interior has a periodic IM structure, the striped laminate is r The conductor plate side also has no strain 4) Because it is difficult to form a striped laminate, the semiconductor substrate side has strain, and for this reason, the embedded semiconductor Lasers have the disadvantage of being difficult to achieve the desired characteristics and of premature deterioration. For example, if the semiconductor layer on the semiconductor substrate side constituting the helical stack is an active layer, the active layer has strain, so there are many active layers in one layer. For this reason, high-intensity laser oscillation cannot be obtained.In order to avoid this, the thickness of the active layer must be made thicker, and the thickness of the semiconductor substrate may be increased. If a semiconductor layer such as a guide layer is inserted between the layers, the oscillation threshold current will increase, which will cause the buried hand conductor laser to deteriorate early, and also cause the periodic structure to deteriorate. Since the average distance from the position of J to the position of the active layer becomes longer, J,
The above-mentioned effects are reduced. In addition, by "continuous" (mouth), it has a periodic structure inside, and the semiconductor layer on the uneven surface is the active layer, the active layer on the right side on the uneven surface, and the top layer. J: is obtained by forming an active III layer having an uneven surface, and then forming another semiconductor layer on that semiconductor layer. Since the uneven layer of the semiconductor layer that forms the surface is exposed to the outside air, traps are created at the interface between the active +lI layer that forms the uneven surface and the semiconductor layer formed on it. The interface emits light. For this reason, it has the drawbacks of low light efficiency and poor laser oscillation with high bullet holes. Furthermore, as mentioned above, the semiconductor layer having an internal periodic structure and an uneven surface is a semiconductor layer other than the active layer, and the semiconductor layer on the opposite side of the active layer is a semiconductor layer other than the active layer. When the surface has an uneven surface, the distance from the position of the periodic structure to the position of the active surface is long, so the above-mentioned effects of having the periodic structure are low. In addition, because of (a) mentioned above, a buried semiconductor laser having an internal periodic structure can be etched from the first semiconductor substrate by etching the first half-substrate. A first step of forming a second semiconductor substrate having an uneven surface that repeats unevenness at a period of 2 semiconductor layers are sequentially formed by a liquid phase epitaxy 1 full growth method to form a first stacked body, and then a counterweight is applied to the first stacked body. Ru-[Through the tzing process, 10 i! forming a striped laminate with K on the first 4-culm and then on the second semiconductor substrate;
It is inevitable that the embedding layer be manufactured by a manufacturing method including a fifth step of forming the embedding layer in connection with the sides of the laminate. In addition, as mentioned above, the first step of forming the first semiconductor layer on the internal (internal) 1' conductor relay having a periodic structure is the 9-piece substrate. , the first
The first layer is etched by etching the first semiconductor layer.
A second semiconductor layer having an uneven surface that repeats unevenness at a predetermined period is formed from the semiconductor layer, and then a second half that covers the uneven surface. A first laminate is formed, including a third T-culm in which another third semiconductor layer is formed using a liquid phase epitaxial growth method, and then the first In the etching process for the laminate, the steps 1 to 4 described above are performed to form a live laminate.
The method includes a fifth step of forming an embedding layer on the semiconductor substrate so as to be connected to the side surface of the strip-shaped stack. However, due to (a) mentioned above, when manufacturing a buried semiconductor laser having a periodic structure inside, the second semiconductor laser It requires one etching process to form the substrate and one etching process to form the striped laminate. When manufacturing a semiconductor laser with a semiconductor chip, one etching process is required to form the second semiconductor layer and one etching process is required to form the striped stack, so in any case, two etching processes are required. It has the disadvantage that it requires repeating the etching process several times, and thus requires many steps.Therefore, in the case of a double-connected buried type semiconductor laser having a conventional periodic structure, It has the disadvantage that it is difficult to easily manufacture embedded semiconductor lasers.In addition, as mentioned in (a) above, an embedded semiconductor laser having a structure inside the period has the disadvantage of being easily manufactured. When manufacturing one semiconductor substrate, after the first step of forming the second semiconductor substrate, the first semiconductor substrate is formed in the second step.
When forming a semiconductor layer, the uneven surface on the second semiconductor substrate is deformed by the heat generated at that time. In addition, J- means that the surface portion of the second semiconductor substrate backs up to the melt forming the first semiconductor layer.
The uneven surface of the half-59 body layer is deformed. In addition, according to the above (b), when manufacturing a "buried type semiconductor laser" having a structure inside the period, after the second process of forming the second semiconductor layer, the third process is performed in the third process. During the process of forming the second semiconductor layer, the uneven surface of the second semiconductor layer is deformed by the heat generated during the process.Also, the surface portion of the second semiconductor layer forms the third semiconductor layer. To the melt that
As a result of the meltback, the uneven surface of the second half is deformed. Therefore, in the case of a conventional buried semiconductor laser having a periodic structure connected to -, the buried semiconductor laser 1F having the periodic structure is assumed to fully exhibit the desired characteristics. I+! ! The disadvantage was that it was difficult to manufacture. J. The present invention proposes a novel buried semiconductor laser having a periodic structure that does not have the above-mentioned drawbacks. 1A to 1C show an example of a buried semiconductor laser having a periodic structure according to the present invention.
It has a semiconductor substrate 1 which has a cladding layer made of P and which has a b effect. Thus, a striped laminate 2 is formed on the semiconductor substrate 1, in which a plurality of semiconductor layers including at least an active III layer are stacked. In this case, an example of the striped laminate 2 is made of, for example, Ga1nAsP, as shown in the figure.
3 g, p 7 (Q (7) example H I n P te'J
1) A structure in which the rad layers 1 and the like are laminated in this order. )1, one end face 5 of the opposing end faces 5 and 6 is perpendicular to the upper surfaces of the active layer 3 and cladding layer 4, while the other end face O(,1,)
7 The cladding layer 4 is not formed on the reflective surface of the
A striped shallow groove 13 is formed on the upper surface of the holder. Further, the embedding layer 7 is formed on the semiconductor substrate 10 in the form of strips 1 to fE! It is formed so as to be connected to the side surface of the i enclosure 2. In this case, an example of the embedding layer 7 is a P-type shield part 8 made of, for example, InP, an N-type shield part 9 made of, for example, InP,
In that order (has a layered configuration, zo 1),
The interface between the shield part 8 and the shield part 9 is formed so that the surface is approximately the same as that of the cladding layer 4, as seen on the side surface of the cladding layer 1. has been done. Furthermore, an electric current 1! is applied to the surface of the semiconductor substrate 1 on the side opposite to the live-like laminate 2 side. i 10 is A-mic, and the electrode 11 extending continuously between them on the striped laminate 2 and the embedding layer 7 is A-mic (=J). In the case of the above-mentioned structure, the 14-layer structure is similar to the structure found in conventional buried semiconductor lasers that do not have a periodic structure. The function of a buried semiconductor laser having a periodic structure similar to that of a buried semiconductor laser without a periodic structure can be obtained. In the configuration of an example of the embedded semiconductor laser described above, the side surface of the striped laminate 2 has a predetermined period λ in the extending direction of the striped laminate 2. It consists of an uneven surface 21 that repeats unevenness. 1S-1 is an example configuration of an embedded semiconductor 1 noser that FJs a periodic 474 structure according to the present invention. An example of a manufacturing method for a buried semiconductor laser with a periodic structure based on the configuration is shown in the second section.
Refer to Figure 10. In FIGS. 2 to 10, parts corresponding to those in FIG. 1 are denoted by the same reference numerals. As shown in FIGS. 2A to 2C, a semiconductor substrate 1 made of N-type InP is prepared. As shown in FIGS. 3 to 3C, the semiconductor substrate 10 is coated with an active f/I layer 3 made of Qa AS P system, a cladding layer 4 made of P-type 1+)P, etc. is formed by a known liquid phase bitaxial growth method, thereby forming a laminate 31 in which the active layer 3 and the cladding layer 4 are laminated in that order. Next, go to Figure 4A and C as shown in '? In addition, a shallow striped vortex 13 is formed on the first surface of the cladding layer 4 constituting the laminate 31. Next, J: Sea urchin,! shown in FIGS. 5A to C. ! +'i 13
A layer 32 made of, for example, silicon dioxide, such as a striped mask layer 35, is then formed on the upper surface of the crat layer 4, which is formed by a method known per se, for example, by sputtering. Next, as shown in Fig. 6A-C? IJ, sea urchin, layer 32-L,
For example, a striped mask layer 3 made of photoresist 1 to
3 is formed by a 7711-lithographic method known per se. In this case, the side surface of the striped mask layer 33 is formed into an uneven surface 34 that repeats unevenness at a predetermined period in the extending direction of the striped mask layer 33. Next, the layer 3 using the striped mask layer 33 as a mask is
2, a striped masking layer 35 is formed from the layer 32 by an etching process known per se, as shown in FIGS. 7A-7C. Next, after removing the strips 1 to 33 of the live mask layers 33 from the tops of the strips 1 to the live mask layers 35, the damage to the laminate 31 using the strips 1 to the live mask layers 35 as masks is confirmed. A striped laminate 2 is formed from the laminate 31 by a known etching process, as shown in FIGS. 8A to 8C. In this case, the side surface of the striped laminate 2 is formed with an uneven surface 21 that repeats unevenness at a predetermined period in the extending direction of the striped laminate 2. Next, on the semiconductor substrate 1, as shown in FIG. 9 Δ to C, a circuit part 8 made of P-type InP, a circuit part 9 made of N-type InP, etc. are laminated in that order. An embedding layer 7 having a structure is formed so as to be connected to the side surface formed by the uneven surface 21 of the grooved laminate 2. In this case, the embedding layer 7 is arranged so that the interface between the circular parts 8 and 9 of A is on the side surface L of the Clara 1 and 4, and the upper surface is a sliver layer. It is formed to have a surface that is substantially the same as the upper surface of the body 2. Next, after removing the striped laminate 2 from the live ζnosk layer 35, as shown in FIG. The side of the striped laminate 2 of No. 1 has an electrode layer 10 on the opposite surface of the striped laminate 2.
is formed by a method known per se, and includes an electrode layer 1 extending to the striped laminate 2 and the buried layer 70.
1 by a method known per se, and then by etching using the electrode layer 11 as a mask, 4 (one of the opposing end faces 5 and 6) of the striped laminate 2 is formed. Similar to 1:6, Fabry-Perot's IQ I:J.
It is formed on an inclined surface so that it is not 41' above the 1st surface.
Ru. As described above, one example of the buried semiconductor laser having the periodic structure described above with reference to FIGS. 1A to 1C is constructed. In the above-1-, an example configuration of a buried semiconductor laser having a periodic structure according to the present invention has been clarified. -1- According to the structure of the buried semiconductor laser according to the present invention in which the period +M structure is right-handed, the striped laminate 2
The uneven surface 21 formed on the side surface constitutes a striped laminate, and another semiconductor layer is formed on the semiconductor layer having an uneven surface that repeats unevenness at a predetermined period. It has a periodic structure that corresponds to the periodic structure that is formed inside the conventional buried semiconductor laser that has a periodic structure. . Therefore, the above-described buried semiconductor laser having a periodic structure according to the present invention can be used as a buried semiconductor laser having a periodic structure similar to the conventional buried semiconductor laser having a periodic structure. It is clear that this function can be obtained. In addition, in the case of the buried semiconductor laser having a periodic structure according to the present invention described above, since it is manufactured as described above, the striped laminate 2 is different from the conventional one as described at the beginning. In the case of a buried semiconductor laser with a periodic structure of ) Did you do it? , as in the case of a buried semiconductor laser with a periodic structure as in , the concavo-convex surfaces constituting the periodic structure may or may not be deformed. Therefore, in the case of the "embedded semiconductor laser" having a periodic structure according to the present invention, it is possible to exhibit the desired characteristics over a long period of time, and to obtain efficient and high-intensity laser oscillation. In addition, in the case of the above-mentioned embedded semiconductor laser having a periodic structure according to the present invention, the embedded semiconductor laser having the periodic structure !III lf43 is shown in FIG. C゛It can be manufactured by the above-mentioned manufacturing method.In the case of such a manufacturing method, (1) one etching treatment for forming a striped layer (2) from the laminate 31 as the etching treatment. The buried type semiconductor lake having the periodic structure according to the present invention as described above can be manufactured by repeating the above-mentioned steps. In the case of a semiconductor laser, a buried type semiconductor laser having a periodic structure can be manufactured more easily than a conventional buried type semiconductor laser having a periodic structure. In the case of the indented semiconductor laser having a periodic structure according to the present invention, the uneven surface constituting the periodic structure is formed on the side surface of the striped laminate. The buried semiconductor laser having the periodicity 4,1.j structure described above is not deformed and formed as described above. In the case of ``, the great feature is that the embedded semiconductor lake having the periodic structure can be easily equipped to sufficiently exhibit the desired '411'1. Jru. In addition, in the above, semiconductor! , when the striped laminate 2 is composed of an active layer 3, a cladding layer 4, etc., in which the temporary layer 1 acts as a cladding layer and semiconductor layers including 11 layers are laminated. As described below, the first cladding layer or the first oxide layer, the active layer, and the negative 2 cladding layer or the second kite layer are laminated in this order. The present invention can also be applied to a buried type semiconductor device having the following structure. Of course, the above configuration (!
It is also possible to change the configuration by replacing N type with P type. In addition, various modifications and changes may be made in accordance with the spirit of the present invention. FIG. 2 is a schematic plan view, a cross-sectional view taken along line B-B, and a cross-sectional view taken along line C-C, showing an example of a buried semiconductor laser having a periodic structure. , FIG. 5, FIG. 6, FIG. 7, FIG. 8, FIG. 9, and FIG. 10 show an example of a manufacturing method of a buried semiconductor laser having a periodic structure according to the present invention, and show the sequential steps. In the diagram, A is a plan view, B is a sectional view on the 1T3-B line, and C is a C-cfJ!
It is a sectional view of the upper part. 1... Semiconductor substrate 2...
・・・・・・・・・Stripe-shaped laminate 3...
・・・・・・・・・Active layer 4・・・・・・・・・
...... Cladding layer 5), 6... End face 7 ...... Burying layer 21...
・・・・・・・・・Concave and convex surface 10.11・・・・・・
・Electrode layer 31・・・・・・・・・・・・Laminated body 33.35
......Striped mask layer 34...
・・・・・・・・・Applicant of uneven surface Nippon Telegraph and Telephone trial rcD ■ l-noku 已] 2-ko' 2 continuation 1 1st book 4j'i KT Agency Director Kazuo Wakasugi Tono 1, case Indication of Japanese Patent Application No. 57-157353 2 Title of the invention Buried semiconductor laser having a periodic structure 3 Person making the correction 1'1 Relationship Patent applicant address 1-1-6 Uchisaiwai-cho, Chiyoda-ku, Tokyo Title name
(422) Nippon Telegraph and Telephone Public Net] Representative Ichi Makoto @
3U3 4, Agent Fi, ? +1i n instruction 1” spontaneous correction 6,
The number of inventions increases by kli +]' None 8,
Contents of supplementary IF (1) In the specification, page 12, line 2 [GaAs [) system 1] is replaced by r I n Qa AS P system 1 revision 1l-16
゜(2) Go to page 12, line 11, page 13, line 3,
Fig. 5 A to C... Formation. I am corrected as follows: 1, 1 Next, according to Fig.
A layer 32 made of, for example, silicon dihide, called m(fi, s1 rib-like mask layer 3'Iε), is added to the upper surface of the cladding forming the cladding in FIG. For example, each part is formed in a uniform 1+7 pattern using a sputtering method (J, -). Next, as shown in FIG. 6 Δ-C, a striped mask layer 33 consisting of, for example, frames A1 to REGIME 1 is added to the layer 32-1.
form. In this case, the side af1 of the striped mask layer 33 is formed into an uneven surface 34 that repeats unevenness at a predetermined period in the extending direction of the striped mask layer i33. In addition, the striped mask layer 33 having the uneven side surface 3/'I can be formed by the following lithography method. In other words, the layer 32 is formed with a photoresist A1~regis by coating.
Fi1, layer 32 h'? The formed cladding Ir of f413? Since each portion is formed to have a uniform thickness of i/10, the volume 13 is reduced in the area facing the bottom of the vortex 13.
The area facing the side surface (sloped) and the area facing 13
It has a thicker thickness than the area not facing, and also:
In the area facing the side of m 13) seedlings 13
The thickness gradually decreases from the side of the area facing the bottom of the area to the side of the area not facing the bottom of the area, and further, 1°? In the area facing 113, the area facing the moon on the side of the bacterium 13 is 1"-1
The region R1 not facing 13 has a thicker thickness, and is formed as b. Next, the photoresist layer is exposed to interference fringes having 18 repetitions of unevenness on the uneven surface 34 by three-beam interference method, and then developed. In this case, if the exposure stripe '1 of the interference fringes and the conditions of the development process are appropriately selected, the photoresist layer has the thickness distribution described above.
The position facing 9/1 to the side of tM 13 is the side,
A striped mask layer 33 forming an uneven surface 3/l is formed on the side surface thereof. Thereafter, a striped mask layer 33 whose side surfaces are formed into an uneven surface 3/I is formed. ” (3) First
Page 4, lines 16-17 [by etching treatment to mask the electrode layer 11]
Due to the lithography method, some corrections are required.

Claims (1)

[Claims] A plurality of ``1'' including at least an active layer on a ``1'' conductor substrate.
'S1 rib-like top layer with 4173 conductor layers (
A\ is formed 41. One embedding layer is in the stripe shape f
In the embedded type "1" force body 1 noser which is formed in connection with the side surface of the t'i ff1 body, the striped product E (, the + side surface is
) 1' Repeat unevenness at a scheduled period in the extension direction of the tube-shaped laminate.
A period 47/, which is characterized by being composed of an uneven surface separated by ζ,
``Embedded semiconductor laser that improves construction.''