JPS5944117A - Method of holding piezoelectric device - Google Patents
Method of holding piezoelectric deviceInfo
- Publication number
- JPS5944117A JPS5944117A JP58141787A JP14178783A JPS5944117A JP S5944117 A JPS5944117 A JP S5944117A JP 58141787 A JP58141787 A JP 58141787A JP 14178783 A JP14178783 A JP 14178783A JP S5944117 A JPS5944117 A JP S5944117A
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric device
- intermediate holder
- piezoelectric
- same
- holding structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/0585—Holders; Supports for surface acoustic wave devices consisting of an adhesive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
技術分野
本発明は表面音波(SAW)フィルタ、結晶共振器等の
圧電装置を機械的に保持する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD The present invention relates to a method for mechanically holding piezoelectric devices such as surface acoustic wave (SAW) filters, crystal resonators, and the like.
背景技術
圧電装置は、その保持体から応力を受けると、その特性
が変わってしまう。この応力はある与えられた温度にお
いて最/hにすることができるが、動作温度領域全体に
わたっては、保持体と装置との間の膨張率の差のために
、装置の特性が変化する。BACKGROUND ART When a piezoelectric device receives stress from its holder, its characteristics change. This stress can be as low as /h at a given temperature, but over the operating temperature range the properties of the device change due to the difference in expansion rates between the carrier and the device.
この膨張率差による効果を打消すまだは除去するだめに
、これまでいろいろな試みが行なわれてきた0例えば、
共振器のような圧電装置を特別に設計されたばね片の中
に取付けることはよく知られている(英国特許第1,4
59,609号)0この他の方法としては、電圧または
電流に依存する熱平衡特性をもった半導体装置の上に、
圧電装置を取付ける方法がある。この場合には、圧電装
置の温度は、この半導体装置によシ、一定に保たれる(
英国特許第1,435,665号)。Various attempts have been made to negate or eliminate the effect of this difference in expansion rate.
It is well known to mount piezoelectric devices such as resonators in specially designed spring pieces (UK Patent Nos. 1 and 4).
59,609) 0 As another method, on a semiconductor device having thermal equilibrium characteristics dependent on voltage or current,
There are ways to install piezoelectric devices. In this case, the temperature of the piezoelectric device is kept constant by this semiconductor device (
British Patent No. 1,435,665).
発明の要約
本発明によシ、圧電装置と同じまたは類似の温度特性と
結晶方位をもった中間保持体をこの圧電装置とその機械
的保持構造体との間に介在させ、それによって、この圧
電装置に及ぼされる膨張率差効果が最小であシおよび機
械的保持構造体から受ける応力が小さな圧電装置の取付
方法かえられる0
発明の実施態様
第1図に示された表面音波フィルタ装置は、その上表面
に、石英直方体11を有する0この直方体は、それぞれ
の両端に、組合わせ電気音響トランスジューサ12,1
3を有する。物体11は、例えばエポキシ樹脂層または
ポリイミP樹脂層によって、より大きい中間保持体14
に接着される。SUMMARY OF THE INVENTION In accordance with the present invention, an intermediate support having the same or similar temperature characteristics and crystal orientation as a piezoelectric device is interposed between the piezoelectric device and its mechanical holding structure, thereby Embodiments of the Invention The surface acoustic wave filter device shown in FIG. This rectangular parallelepiped has a quartz rectangular parallelepiped 11 on its upper surface, which has a combination electroacoustic transducer 12, 1 at each end.
It has 3. The object 11 is attached to a larger intermediate carrier 14, for example by an epoxy resin layer or a polyimide P resin layer.
is glued to.
この中間保持体14はフィルタ物体11と同じ結晶方位
をもった類似の材料、例えば石英でつくられる。この中
間保持体14は機械的保持構造体、例えば従来のへラダ
15に固定される。この保持構造体は導線端子16を有
している。トランスジューサ12.13は端子16に導
線17で接続される。This intermediate carrier 14 is made of a similar material with the same crystal orientation as the filter body 11, for example quartz. This intermediate holding body 14 is fixed to a mechanical holding structure, for example a conventional spatula 15. This holding structure has a conductor terminal 16. Transducers 12,13 are connected to terminals 16 by conductors 17.
第2図に示された装置では、石英共振器板21は、対向
する面上に、金属電極パターン体22゜23を肩する。In the device shown in FIG. 2, a quartz resonator plate 21 carries metal electrode patterns 22 and 23 on opposite sides.
この板21は導電ペースでつくられた2つの小粒体24
.25の上に保持される。This plate 21 has two small particles 24 made of conductive paste.
.. It is held on top of 25.
小粒体24は電極パターン体22と直接接触し、一方小
粒体25は、この板の端を越えて上面にまで延長されて
、電極パターン体23と接触する。The granules 24 are in direct contact with the electrode pattern 22, while the granules 25 extend beyond the edge of this plate to the top surface and are in contact with the electrode pattern 23.
板21と同じ結晶方位を持った石英の直方体28の上に
沈着された金属導体26.27の上に、これらの小粒体
が保持される。この石英直方体は適当な機械的保持構造
体(図示されていない)に固定される。導電ペースト小
粒体によシ、石英の主共振部分と中間保持体との間に隙
間がつくられる02つの特定の実施例だけが示されたけ
れども、本発明は明らかに結晶共振器、多極フィルタ、
SAW横フィルタ、SAW遅延線等を有する圧電装置の
いずれにも応用することができる。本発明はまたどんな
圧電性材料を用いた装置にも応用することができる。最
もよく用いられる圧電性拐料の例は、石英およびニオブ
酸リチウムである0ある場合には、装置の中央が押しつ
ぶされたペースト小粒体によって保持され、そして電気
的接続は導線を接合することによって行なわれる。電子
装置と同じ月料の保持基板を用いると、取付けによシ生
ずる歪が小さくなるので、長期間ドリフト特性、温度に
対する安定性、加速度および振動に対する特性が改善さ
れ、そして複雑な装置への取付けが非常に簡単に行な7
えるようになる0These grains are held on a metal conductor 26,27 deposited on a quartz rectangular parallelepiped 28 with the same crystal orientation as the plate 21. The quartz cuboid is secured to a suitable mechanical holding structure (not shown). Although only two specific embodiments have been shown in which a gap is created between the quartz main resonant part and the intermediate holder by means of conductive paste particles, the present invention is clearly applicable to crystal resonators, multipole filters, etc. ,
It can be applied to any piezoelectric device having a SAW lateral filter, a SAW delay line, etc. The invention can also be applied to devices using any piezoelectric material. Examples of the most commonly used piezoelectric materials are quartz and lithium niobate.In some cases, the center of the device is held by crushed paste pellets, and electrical connections are made by bonding conductive wires. It is done. Using a retaining board with the same monthly cost as the electronic equipment reduces mounting distortion, improves long-term drift characteristics, temperature stability, acceleration and vibration properties, and facilitates mounting in complex equipment. is very easy to do7
0
第1図はSAW共振器装置の取付図、
第2図は結晶共振器装置の取付図である。
11.12,13.21 圧電装置
14 中間保持体
15 機械的保持構造体24.25
導電ペーストの小粒体
代理人 浅 村 皓FIG. 1 is an installation diagram of the SAW resonator device, and FIG. 2 is an installation diagram of the crystal resonator device. 11.12, 13.21 Piezoelectric device 14 Intermediate holding body 15 Mechanical holding structure 24.25
Small particle agent for conductive paste Akira Asamura
Claims (1)
て、前記中間保持体が機械的保持構造体の上に取付けら
れることと、前記中間保持体が前記圧電装置と同じ材料
または類似の材料でつくられおよび前記圧電装置と同じ
結晶方位をもつこととを有する前記圧電装置。 (2)圧電装置と同じまたは類似の温度特性および結晶
方位を有する材料でつくられた中間保持体を前記圧電装
置と前記圧電装置の機械的保持構造体との間に介在させ
、それにより前記圧電装置に作用する膨張率差効果が最
小になシおよび前記機械的保持構造体から作用する応力
が最小になる前記圧電装置の取付法。 (3) 特許請求の範囲第2項において、前記圧電装
置が前記中間保持体に接着される取付法。 (4ン 特許請求の範囲第2項において、前記圧電装
置が前記圧電装置の電極と前記中間保持体上の導電体と
の間の電気的接続を行なう導電ペーストの小粒体によシ
前記中間保持体に固定される取付法。 (5)特許請求の範囲第2項において、前記圧電装置お
よび前記中間保持体の材料がいずれも石英またはニオブ
酸リチウムである取付法。[Scope of Claims] (1) A piezoelectric device mounted on an intermediate holder, wherein the intermediate holder is mounted on a mechanical holding structure, and the intermediate holder is connected to the piezoelectric device. said piezoelectric device being made of the same or similar material and having the same crystal orientation as said piezoelectric device. (2) Interposing an intermediate holder made of a material having the same or similar temperature characteristics and crystal orientation as the piezoelectric device between the piezoelectric device and the mechanical holding structure of the piezoelectric device, thereby A method of mounting the piezoelectric device that minimizes differential expansion effects acting on the device and minimizes stress acting from the mechanical retaining structure. (3) An attachment method according to claim 2, in which the piezoelectric device is adhered to the intermediate holder. (4) In claim 2, the piezoelectric device is provided with small particles of conductive paste that provide electrical connection between the electrodes of the piezoelectric device and the conductor on the intermediate holder. (5) An attachment method according to claim 2, wherein the piezoelectric device and the intermediate holder are both made of quartz or lithium niobate.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08222375A GB2125211A (en) | 1982-08-03 | 1982-08-03 | Mechanical support of piezoelectric devices |
GB8222375 | 1982-08-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5944117A true JPS5944117A (en) | 1984-03-12 |
Family
ID=10532079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58141787A Pending JPS5944117A (en) | 1982-08-03 | 1983-08-02 | Method of holding piezoelectric device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5944117A (en) |
FR (1) | FR2532118A1 (en) |
GB (1) | GB2125211A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02261210A (en) * | 1989-03-31 | 1990-10-24 | Nippon Dempa Kogyo Co Ltd | Crystal oscillator |
JPH02291710A (en) * | 1989-04-30 | 1990-12-03 | Nippon Dempa Kogyo Co Ltd | Crystal vibrator |
JPH07154194A (en) * | 1993-07-20 | 1995-06-16 | Avl Ges Verbrennungskraftmas & Messtech Mbh | Piezoelectric crystal element |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2202989B (en) * | 1987-04-02 | 1991-01-09 | Stc Plc | Crystal resonnator |
US5012151A (en) * | 1989-09-12 | 1991-04-30 | Halliburton Company | Thermally matched strip mounted resonator and related mounting method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5514358B2 (en) * | 1974-01-17 | 1980-04-15 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5334875B2 (en) * | 1973-07-10 | 1978-09-22 | ||
JPS5652490B2 (en) * | 1973-11-16 | 1981-12-12 | ||
JPS583602B2 (en) * | 1974-11-09 | 1983-01-22 | セイコーエプソン株式会社 | Suishiyo Shindoushi |
CH608335B (en) * | 1976-09-14 | Ebauches Sa | MICRORESONATEUR PIEZOELECTRIQUE. | |
JPS5421295A (en) * | 1977-07-19 | 1979-02-17 | Matsushima Kogyo Kk | Crystal oscillator |
DE2939844A1 (en) * | 1978-12-21 | 1980-07-10 | Seiko Instr & Electronics | QUARTZ SWINGER |
CH626479A5 (en) * | 1979-07-05 | 1981-11-13 | Suisse Horlogerie |
-
1982
- 1982-08-03 GB GB08222375A patent/GB2125211A/en not_active Withdrawn
-
1983
- 1983-08-02 JP JP58141787A patent/JPS5944117A/en active Pending
- 1983-08-03 FR FR8312826A patent/FR2532118A1/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5514358B2 (en) * | 1974-01-17 | 1980-04-15 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02261210A (en) * | 1989-03-31 | 1990-10-24 | Nippon Dempa Kogyo Co Ltd | Crystal oscillator |
JPH02291710A (en) * | 1989-04-30 | 1990-12-03 | Nippon Dempa Kogyo Co Ltd | Crystal vibrator |
JPH07154194A (en) * | 1993-07-20 | 1995-06-16 | Avl Ges Verbrennungskraftmas & Messtech Mbh | Piezoelectric crystal element |
Also Published As
Publication number | Publication date |
---|---|
FR2532118A1 (en) | 1984-02-24 |
GB2125211A (en) | 1984-02-29 |
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