JPS594179A - Amorphous solar battery - Google Patents
Amorphous solar batteryInfo
- Publication number
- JPS594179A JPS594179A JP57113408A JP11340882A JPS594179A JP S594179 A JPS594179 A JP S594179A JP 57113408 A JP57113408 A JP 57113408A JP 11340882 A JP11340882 A JP 11340882A JP S594179 A JPS594179 A JP S594179A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- curable resin
- ultraviolet curable
- amorphous silicon
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 claims abstract description 41
- 239000011347 resin Substances 0.000 claims abstract description 41
- 239000003086 colorant Substances 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 18
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 10
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract description 6
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 6
- 239000010935 stainless steel Substances 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 238000001723 curing Methods 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 8
- -1 tetrahydrofurfuryl Chemical group 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 150000005846 sugar alcohols Polymers 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- ICLZNGAELWYHKL-CAPFRKAQSA-N (E)-3-[5-[5-[4-(N-phenylanilino)phenyl]thiophen-2-yl]thiophen-2-yl]prop-2-enoic acid Chemical compound OC(=O)\C=C\c1ccc(s1)-c1ccc(s1)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 ICLZNGAELWYHKL-CAPFRKAQSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- SBYMUDUGTIKLCR-UHFFFAOYSA-N 2-chloroethenylbenzene Chemical compound ClC=CC1=CC=CC=C1 SBYMUDUGTIKLCR-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- BMVWCPGVLSILMU-UHFFFAOYSA-N 5,6-dihydrodibenzo[2,1-b:2',1'-f][7]annulen-11-one Chemical class C1CC2=CC=CC=C2C(=O)C2=CC=CC=C21 BMVWCPGVLSILMU-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010011732 Cyst Diseases 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 210000001072 colon Anatomy 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 235000015243 ice cream Nutrition 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- SBOJXQVPLKSXOG-UHFFFAOYSA-N o-amino-hydroxylamine Chemical compound NON SBOJXQVPLKSXOG-UHFFFAOYSA-N 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000010019 resist printing Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は、アモルファス太陽電池に関する。[Detailed description of the invention] The present invention relates to amorphous solar cells.
最近、太陽電池の低コスト化を目的として、グロー放電
などによりアモルファス状態でのシリコ：／ 薄Ｈをス
テンレス、銅、アルミニウム等の基板上に積層させて太
陽電池として使用する試みがなされている。Recently, with the aim of reducing the cost of solar cells, attempts have been made to use silico:/thin H in an amorphous state by glow discharge or the like on a substrate made of stainless steel, copper, aluminum, etc. as a solar cell.
このような製法による太陽庖池累子の構造を第１図に示
す。これは、ステンレス基板１上に、ＣＶＤ（化学反応
を伴う気相成長）、グロー放電等により、Ｐ型層、真性
層、ｎ型層のアモルファスシリコンＪｉｍ２を成長させ
たのち、Ｉｎ、ＩＯｇ、Ｓ ｎ ０２等の透明導電１１
３を被覆し、その上に蒸着叉はスパッター等の手法によ
りＡＩＪ、 Ｎｉ、Ｏｕ等の中層膜又は、Ａｌ’Ａｙ
５ＴｉＡｙ 、 ０ｒＯｕ等の二層膜、ＡＨＡ、。Figure 1 shows the structure of Taiyo Koike Yuko produced by such a manufacturing method. This is done by growing amorphous silicon Jim2 of a P-type layer, an intrinsic layer, and an n-type layer on a stainless steel substrate 1 by CVD (vapor phase growth accompanied by a chemical reaction), glow discharge, etc., and then growing In, IOg, S Transparent conductive 11 such as n 02
3 and coated with an intermediate layer film of AIJ, Ni, Ou, etc. or Al'Ay by vapor deposition or sputtering.
Bilayer films such as 5TiAy, 0rOu, AHA, etc.
ハンダ層よりなる三層膜等よりなる電極を形成して得ら
れる。このような太陽′ｒｌ池素子が電卓等の民生用機
器に用いられるときは、プリント基板上に素子を接着し
てモジュール化し、また、電力用］こ用いられるときは
、複数個の太陽ｆＫ池を直列又は並列に接続され、ガラ
ス、シリコーン樹脂等で全体を被覆保誰される。It is obtained by forming an electrode made of a three-layer film made of a solder layer or the like. When such a solar battery element is used in consumer equipment such as a calculator, the element is glued onto a printed circuit board to form a module. are connected in series or parallel, and the whole is covered with glass, silicone resin, etc.
しかるに、民生用に使用される場合、透明導電層３及び
アモルファスシリコン層２の機械的強度が弱いため、モ
ジュール作成時、又は電卓等の民生用機器に装着すると
きに、損傷を受は易く取扱い上に難点があるとともに、
表面から水分等が侵入し易く、アモルファスシリコン層
等に悪影譬を及ぼし、信頼性に問題があった。However, when used for consumer use, the mechanical strength of the transparent conductive layer 3 and the amorphous silicon layer 2 is weak, so they are easily damaged during module creation or when attached to consumer equipment such as a calculator. There are some difficulties above, and
Moisture or the like easily enters from the surface, which adversely affects the amorphous silicon layer and the like, resulting in reliability problems.
また、電力用に使用する場合、接続された太陽電池素子
全体がンリコーン樹脂、ガラス等で被覆されるため非常
に製造工程が複雑で、かつ、多くの材料が必要なため実
装パッケージングコストが非常に高価となる欠点があっ
た。Furthermore, when used for electric power, the entire connected solar cell element is coated with silicone resin, glass, etc., making the manufacturing process extremely complex and requiring a large amount of materials, resulting in extremely high mounting and packaging costs. It had the disadvantage of being expensive.
これらの欠点を改良するためエポキシ系シリコン系等の
熱硬化型瘤Ｄ１層を太陽電池受光面側に形成することに
より表面を保護した太陽電池が知られている。しかし、
このような熱硬化型の透明性樹脂を表面保護に使用する
場合は、
■ 熱容量の大きいステンレス基板等よりなる太陽電池
を、少なくとも１００℃以上に加熱しなければならず、
多社の熱エネルギーを必要とする。In order to improve these drawbacks, a solar cell is known in which the surface is protected by forming a thermosetting nodule D1 layer of epoxy-silicon type or the like on the light-receiving surface side of the solar cell. but,
When using such thermosetting transparent resin for surface protection, ■ solar cells made of stainless steel substrates with large heat capacity must be heated to at least 100°C;
Requires heat energy from multiple companies.
■ 通常、熱硬化型樹脂は、硬化するために比較的長い
反応時間を要し、面積の大きい太陽電池の製造には量産
性に難点がある。■ Normally, thermosetting resins require a relatively long reaction time to cure, making it difficult to mass-produce large-area solar cells.
■ 通常、熱硬化型樹脂は、有機溶剤を含み、硬化時、
溶剤ガスが発生するため、溶剤ガス処理等の設備を必要
とする、等の欠点があった。■ Normally, thermosetting resins contain organic solvents, and during curing,
Since solvent gas is generated, there are drawbacks such as the need for equipment for processing solvent gas.
本発明の目的は、生産性が高く製造コストを低減化した
アモルファス太陽電池を提供することにある。An object of the present invention is to provide an amorphous solar cell with high productivity and reduced manufacturing costs.
本発明のアモルファス太陽電池は、太ｌ＠電池前面を透
光性紫外線硬化型樹脂１−で被覆してなることを特徴と
している。The amorphous solar cell of the present invention is characterized in that the front surface of the cell is coated with a translucent ultraviolet curable resin 1-.
本発明で使用する紫外線硬化型樹脂とは、光重合性化合
物（１）と、光増感剤（Ｉｆ）を必須成分とし、波長２
００〜４００ ｎｍの紫外線を照射することにより硬化
する樹脂である。The ultraviolet curable resin used in the present invention contains a photopolymerizable compound (1) and a photosensitizer (If) as essential components, and has a wavelength of 2
It is a resin that is cured by irradiation with ultraviolet light of 00 to 400 nm.
光重合性化合物（Ｉ）とは、分子内に１個以上の重合性
二重結合を有する光重合可能な化合物であり、例えば、
（＋） スチレン、α−メチルスチレン、クロロスチ
レンなどのスチレン系化合物、
（ＩＩ） ）リアリルイソシアヌレート、ジアリルフ
タレートなどのアリル系化合物、
（ＩＩＤ メチル（メタ）アクリレート、エチル（メ
タ）アクリレート、テトラヒドロフルフリル（メタ）ア
クリレートなどのモノ（メタ）アクリレート化合物、
Ｑψ エチレングリコールジ（メタ）アクリレート、１
．６−ヘキザンジオールジ（メタ）アクリレートなどの
アルキレングリコールジ（メタ）アクリレート化合物、
（Ｖ） ｌ−リメチロールプロパントリ（メタ）アク
リレート、ペンタエリスリトールテトラ（メタ）アクリ
レートなどの多価アルコールの多価（メタ）アクリレー
ト化合物、
（ＶＬ） 分子内に２個以上のエポキシ基を有する化
合物に（メタ）アクリル酸を反応させて得られるエポキ
シ（メタ）アクリレート化合物、
（Ｖｌｌ） カルボン酸成分として（メタ）アクリル
酸と多価カルボン酸およびアルコール成分として２価以
上の多価アルコールとを反応させて得られるオリゴエス
テル（メタ）アクリレート化合物、〜ｌ１１） ２価
以上の多価イソシアネ−１・化合物と２価以上の多価ア
ルコールを予め反応させて得られる末端イソシアネート
基含有化合物にアルコール性水酸基含有（メタ）アクリ
レートを反応させて得られるウレタン変性（メタ）アク
リレート化合物などが挙げられる。上記化合物は単に例
示したものであって、本発明を何ら限定するものでなく
、他の公知の光重合性化合物が使用可能であることは言
う才でもない。The photopolymerizable compound (I) is a photopolymerizable compound having one or more polymerizable double bonds in the molecule, for example, styrenic compounds such as (+) styrene, α-methylstyrene, and chlorostyrene. Compounds, (II)) Allyl compounds such as realyl isocyanurate and diallyl phthalate, (IID Mono(meth)acrylate compounds such as methyl (meth)acrylate, ethyl (meth)acrylate, and tetrahydrofurfuryl (meth)acrylate, Qψ Ethylene glycol di(meth)acrylate, 1
．． Alkylene glycol di(meth)acrylate compounds such as 6-hexanediol di(meth)acrylate, polyhydric alcohols such as (V) l-limethylolpropane tri(meth)acrylate, and pentaerythritol tetra(meth)acrylate; meth)acrylate compound, (VL) Epoxy (meth)acrylate compound obtained by reacting (meth)acrylic acid with a compound having two or more epoxy groups in the molecule, (Vll) (meth)acrylic as a carboxylic acid component An oligoester (meth)acrylate compound obtained by reacting an acid with a polyhydric carboxylic acid and a polyhydric alcohol having a valence of 2 or more as an alcohol component, ~l11) A polyhydric isocyanate-1 compound with a valence of 2 or more and a polyhydric alcohol having a valence of 2 or more Examples include urethane-modified (meth)acrylate compounds obtained by reacting alcoholic hydroxyl group-containing (meth)acrylates with terminal isocyanate group-containing compounds obtained by reacting polyhydric alcohols in advance. The above-mentioned compounds are merely exemplified and do not limit the present invention in any way, and it is needless to say that other known photopolymerizable compounds can be used.
光増感剤（Ｉｆ）とは、上記光重合性化合物（１）の光
重合反応を促進する化合物であって、特に制限はなく、
例えば、ベンゾイン系化合物、ベンゾフェノン系化合物
、ベンジルアルキルケタール系化合物、アントラキノン
系化合物、チオキサンｉ・ン糸化合物、ジベンゾスベロ
ン系化合物、アセトフェノン系化合物、有機過酸化物な
どが挙げられる。これらの光増感剤（１）は、単独使用
または二種以上併用され、紫外線硬化型樹脂中に０．１
〜２０重量％配合して使用される。The photosensitizer (If) is a compound that promotes the photopolymerization reaction of the photopolymerizable compound (1), and is not particularly limited.
Examples include benzoin compounds, benzophenone compounds, benzyl alkyl ketal compounds, anthraquinone compounds, thioxane compounds, dibenzosuberone compounds, acetophenone compounds, and organic peroxides. These photosensitizers (1) can be used alone or in combination of two or more, and can be used in a concentration of 0.1 in the ultraviolet curable resin.
It is used in an amount of ~20% by weight.
本発明で使用される紫外線硬化型樹脂としては、先に例
示したアクリル系紫外線硬化型樹脂のほかに、チオール
−エン型紫外線硬化型樹脂、紫外線硬化型エポキシ樹脂
、紫外線硬化型不飽和ポリエステル樹脂なども使用可能
である。In addition to the above-mentioned acrylic UV-curable resins, examples of the UV-curable resins used in the present invention include thiol-ene-type UV-curable resins, UV-curable epoxy resins, and UV-curable unsaturated polyester resins. is also available.
本発明で使用する紫外線硬化型樹脂には、接着性、加工
性、可撓性、耐水性、耐候性、印刷適性、樹脂の貯蔵安
定性などの特性を付与するために各種の配合剤や添加剤
を配合することも可能である。The ultraviolet curable resin used in the present invention contains various compounding agents and additives to impart properties such as adhesiveness, processability, flexibility, water resistance, weather resistance, printability, and storage stability of the resin. It is also possible to incorporate agents.
例えば、接着性向上のために、ビニノ四−リクロルシラ
ン、ビニルトリエｉ・キシシラン、Ｎ−β（アミノエテ
ル）Ｎ−アミノプロピルトリメトキシシランなどのシラ
ン系カップリング剤を、印刷適性を向上するために、ポ
リフローＳ（共栄社油脂化学工業株式会社製）、Ｋｓ−
６６（信越シリコン株式会社製）などのレベリング剤を
、ＴＳＡ−７２０（東芝シリコーン株式会社製）などの
消泡剤ヲ、アエロジル＃２００．＃８００ （日本ｙ、
ｃａジル工業株式会社製）などの揺変剤を、樹脂の貯蔵
安定性を向上するために、ハイドロキノン、ハイドロキ
ノンモノメチルエーテル、フェノチアジンなどの熱重合
防止剤等を配合することができろ。For example, to improve adhesion, silane coupling agents such as vinyltetra-lychlorosilane, vinyltriane-xysilane, and N-β(aminoether)N-aminopropyltrimethoxysilane are used, and to improve printability, polyflow S (manufactured by Kyoeisha Yushi Kagaku Kogyo Co., Ltd.), Ks-
66 (manufactured by Shin-Etsu Silicone Co., Ltd.), an antifoaming agent such as TSA-720 (manufactured by Toshiba Silicone Co., Ltd.), Aerosil #200. #800 (Japan y,
In order to improve the storage stability of the resin, a thermal polymerization inhibitor such as hydroquinone, hydroquinone monomethyl ether, or phenothiazine may be added.
さらに、本発明の目的を損わない範囲において、エポキ
シ樹脂、フェノキシ樹脂、ポリウレタン樹脂、ポリスチ
レン樹脂、ポリ（メタ）アクリル酸エステル系重合体、
飽和共重合ポリエステルなどの合成樹脂なども配合する
ことができる。Furthermore, within a range that does not impair the purpose of the present invention, epoxy resins, phenoxy resins, polyurethane resins, polystyrene resins, poly(meth)acrylic acid ester polymers,
Synthetic resins such as saturated copolymerized polyester can also be blended.
特に本発明の目的を達成するためには、飽和共重合ポリ
エステル樹脂の配合が極めて有用な場合がある。例えば
、アモルファスシリコン層や、透明導電層への接着性の
向上、耐水性、耐候性の向上、さらには打抜き加工性、
折曲げ加工性の向上に非′Ｋに効果的である。In particular, in order to achieve the object of the present invention, blending of a saturated copolymerized polyester resin may be extremely useful. For example, it improves adhesion to amorphous silicon layers and transparent conductive layers, improves water resistance and weather resistance, and improves punching processability.
It is effective in improving bending workability.
更に重要なことは、太陽ｔｉｔ池に意匠的装飾を施こす
目的で、透明性紫外線硬化型樹脂の中に、透明性を損わ
ない程度の微量の着色剤を配合することができる。More importantly, for the purpose of decoratively decorating the solar tit pond, a trace amount of coloring agent can be blended into the transparent ultraviolet curable resin to an extent that does not impair transparency.
以下、本発明の実施例を、その製造方法とともに説明す
る。Examples of the present invention will be described below along with a manufacturing method thereof.
実施例１
この実施例は、電卓、ラジオ等の民生用機器に使用する
比較的小型の太陽電池に適用される。Example 1 This example is applied to relatively small solar cells used in consumer devices such as calculators and radios.
ます、納２図に示すように、ステンレス、セラミックス
、ガラス等よりなる基板５上に、ＣｖＤグロー放電等に
より、モノシラン（８ｊｆ１４ ） ％ フッ化ケイ素
（Ｂｉ１２ ） 、氷菓（Ｈ２）、ホスフィン（ＰＨ８
）、ジボラン（Ｂ２Ｈ６）等のガスを適宜用いて、Ｐ型
領域、真性領域、ｎ型領域のいずれか一層、多層のアモ
ルファスシリコン層６を形成する。As shown in Fig. 2, monosilane (8jf14), silicon fluoride (Bi12), ice cream (H2), and phosphine (PH8) are deposited on a substrate 5 made of stainless steel, ceramics, glass, etc. by CvD glow discharge or the like.
), diborane (B2H6), or other gas as appropriate to form a multilayer amorphous silicon layer 6 including one layer of a P-type region, an intrinsic region, or an n-type region.
次に、第８図ａ図に平面図、同図す図に断面図で示すよ
うに、アモルファスシリコン層６の上に、Ｉｎ２０Ｂ、
８ Ｙｌｏ ２等の透明導電層Ｔを光起電力部として有
効に動作させるための所望パターン形状に形成する。そ
の形成方法は、真空蒸着、スパッタリング又はスプレー
法等による。パターン形状は、所定の金属マスクを用い
て膜形成と同時に作成するか、或いは、アモルファスシ
リコン層６の全面に透明導電層を設け、次に、印刷技術
又はホトエツチング技術により所定のパターンのレジス
トマスクを形成したのち、フッ酸、塩酸、塩化第二鉄等
のエツチング液を用いて不要部分を除去して所定パター
ンの透明導電層Ｔを形成し、その後、不要のレジストマ
スクを剥離液により除去することにより行オ〕れる。Next, as shown in a plan view in FIG. 8a and in a cross-sectional view in the same figure, In20B,
8 A transparent conductive layer T such as Ylo 2 is formed into a desired pattern shape to operate effectively as a photovoltaic portion. The formation method is vacuum evaporation, sputtering, spraying, or the like. The pattern shape can be created at the same time as film formation using a predetermined metal mask, or by providing a transparent conductive layer on the entire surface of the amorphous silicon layer 6 and then forming a resist mask with a predetermined pattern using printing technology or photoetching technology. After forming, remove unnecessary portions using an etching solution such as hydrofluoric acid, hydrochloric acid, or ferric chloride to form a transparent conductive layer T in a predetermined pattern, and then remove unnecessary resist masks using a stripping solution. It is carried out by.
つづいて、第４図ａ図に平面図、同図す図に断面図で示
すように、所定パターンの透明導電層Ｔの上にその輪郭
よりも広く、透光性紫外線硬化型樹脂９を被覆する。こ
のとき、透明導［層７ Ｊ：、のｘｔａ取出しｍ８ａと
、アモルファスシリコン層６上の電極取出し部８ｂには
紫外線硬化樹脂層９を設けない。この紫外線硬化樹脂７
Ｅｍ ９の形成方法は、スクリーン印刷により紫外線硬
化型樹脂を被覆し、必要に応じて赤外ランプ等を用いて
数分以内の加熱によるレベリング工程を経たのち、数１
０秒以内の紫外線照射により硬化させるか、戊いは、予
め紫外線硬化型樹脂を被覆しない部分にホトエッチＬ／
シスト印刷等により所定パターンのレジスト膜を形成
しておき、その上に、スプレー法、スピンナー法、ティ
ップ法等により紫外線硬化型樹脂を塗布し、必要に応じ
て赤外ランプ等を用いて数分以内の加熱によるレベリン
グ工程を経ｊこのち、数１０秒以内の紫外線照射により
塗布した樹脂を硬化させ、その後、予め形成したレジス
ト膜を剥離又は溶解に誹り除去すると同時にその上の樹
脂も除去することにより行われる。Subsequently, as shown in a plan view in FIG. 4A and a cross-sectional view in FIG. do. At this time, the ultraviolet curing resin layer 9 is not provided on the xta extraction m8a of the transparent conductive layer 7J: and the electrode extraction portion 8b on the amorphous silicon layer 6. This ultraviolet curing resin 7
The method for forming Em 9 is to coat it with an ultraviolet curable resin by screen printing, and if necessary, go through a leveling process by heating within a few minutes using an infrared lamp, etc.
Either cure by UV irradiation for less than 0 seconds, or photo etch L/
A resist film with a predetermined pattern is formed by cyst printing, etc., and an ultraviolet curable resin is applied on top of it by a spray method, a spinner method, a tip method, etc., and if necessary, it is applied for several minutes using an infrared lamp, etc. After going through a leveling process by heating within several tens of seconds, the applied resin is cured by ultraviolet irradiation within several tens of seconds, and then the pre-formed resist film is removed by peeling or dissolving, and at the same time the resin on it is also removed. This is done by
ここで、紫外線硬化型樹脂層９の形成実施例を更に詳細
に説明する。紫外線硬化型樹脂の組成は次の通りであっ
た。Here, an example of forming the ultraviolet curable resin layer 9 will be described in more detail. The composition of the ultraviolet curable resin was as follows.
２宮能工ポキシアクリレート化合物 ６０重量部２官
能アクリレ一ト化合物 ５ 〃１官能アクリレ
ート化合物 ８０ 〃光増感剤
２ 〃レベリング剤
２ 〃シランカップリング剤 １ 〃
この紫外線硬化型樹脂を、８００メツシユポリ工ステル
スクリーン印刷版を用いて印刷し、５．６Ｋｗ高圧水銀
灯から１５０の距離で１０秒間紫外線を照射して硬化さ
せた。得られた膜の性能の試験結果はζ尺の通りであっ
た。2nomiya poxy acrylate compound 60 parts by weight Bifunctional acrylate compound 5 Monofunctional acrylate compound 80 Photosensitizer
2 Leveling agent
2 Silane coupling agent 1
This ultraviolet curable resin was printed using an 800 mesh polyester screen printing plate and cured by irradiating it with ultraviolet light for 10 seconds from a 5.6 Kw high pressure mercury lamp at a distance of 150 mm. The test results of the performance of the obtained membrane were as shown in the ζ scale.
１ 、 ｋｌ：＝（ｋ イｐ 度 Ｉ（２
、接Ｊ性（＄盤目テープ剥離法による）１００／１００
（アモルファスシリコンＩ−上）＋００／１００（透
明導゛イ層−ヒ）
８、耐水ｆ−Ｅ ＆ＩｌＩｍ水中６０分浸漬後異
常なし４、光沢（６０°反射） ９８％
次に、ｔｌｌｌｉＪＩＭ出し部８ｂのアモルファスシリ
コン１−６を機械的な手法により除去するか、又は、マ
スクを併用した化学的なエツチング又はプラズマエツチ
ング等により除去！ノたのも、第５図に示すように、電
極取出し部８ａ、ｇｂ上に電極層１０ａ、１０ｂを形成
する。電極層１０ ａ、 １０ ｂは低温硬化型Ａｙペ
ースト、黒鉛ペースト等をスクリーン印刷により被覆後
加熱硬化させるが、或いは、紫外線硬化型Ａｙペースト
、Ｏｕペースト等をスクリーン印刷により被覆径紫外線
照射により硬化させるか、或いは、蒸着、スパッタ等ニ
より全面にＡ１．Ｎ１、Ｏｕ等の単Ｍ膜、Ａ１１Ａｙ
。1, kl:=(k ip degree I(2
, J contact property (by $ board tape peeling method) 100/100
(Amorphous silicon I-top) +00/100 (transparent guide layer-hi) 8. Water resistance f-E & IlIm No abnormality after immersion in water for 60 minutes 4. Gloss (60° reflection) 98% Next, tlliJIM protrusion part 8b Amorphous silicon 1-6 is removed by a mechanical method, or by chemical etching or plasma etching using a mask! Also, as shown in FIG. 5, electrode layers 10a and 10b are formed on the electrode lead-out portions 8a and gb. The electrode layers 10a and 10b are coated with a low-temperature curing type Ay paste, graphite paste, etc. by screen printing and then heated and cured, or alternatively, an ultraviolet curing type Ay paste, Ou paste, etc. is coated with screen printing and cured by irradiating the coating diameter with ultraviolet rays. Or, A1. Single M film such as N1, Ou, A11Ay
.
’Ｉ！ｉＡｙ、 ０ｒＯｕＡｙ等の多重膜を形成し、レ
ジスト印刷技術、ホトエッチ技術により！極層１０ａ。'I! Multilayer films such as iAy and 0rOuAy are formed using resist printing technology and photoetch technology! Pole layer 10a.
１０ｂに対応するレジスト膜を形成したのち、化学エッ
チ又はプラズマエッチ等により不要部分の金属膜を除去
し、不要のレジストを剥離して電極形成するか、或いは
、予め所定のパターンに形成された金属マスクを用い、
マスクＭ着等により電極を形成する。After forming a resist film corresponding to 10b, remove unnecessary portions of the metal film by chemical etching or plasma etching, and peel off the unnecessary resist to form an electrode, or use a metal film formed in a predetermined pattern in advance. using a mask,
Electrodes are formed by applying a mask M or the like.
次に、プレス、シャーリング等により基板５を素子ごと
に切断すれば、第６図ａ図及びｂ図に示すまりな太陽電
池素子が得られる。Next, by cutting the substrate 5 into elements by pressing, shearing, etc., the round solar cell elements shown in FIGS. 6a and 6b are obtained.
すなわち、本発明の実施例は、基板５上にアモルファス
シリコン層６が全面にわたって形成され、その表面に１
９−［定形状の透明導電層１が形成され、アモルファス
シリコン層６の一部分及び透明導電層７の一部分に電極
１０ａ、１０ｂが設けられ、上記透明２１！屯層７の前
面及び側面と、ｗＬ極１０ａ。That is, in the embodiment of the present invention, an amorphous silicon layer 6 is formed over the entire surface of a substrate 5, and a layer of silicon is formed on the surface of the amorphous silicon layer 6.
9-[A fixed-shaped transparent conductive layer 1 is formed, electrodes 10a and 10b are provided on a portion of the amorphous silicon layer 6 and a portion of the transparent conductive layer 7, and the transparent 21! The front and side surfaces of the tunic layer 7 and the wL pole 10a.
１０ｂの根元部が透光性紫外線硬化型樹脂９により完全
に被覆されている。The root portion of 10b is completely covered with translucent ultraviolet curing resin 9.
実施例２
この実施例は、主として室外で使用され機械的強度と信
頼性が特に要求される電力用太陽電池に適用される。Example 2 This example is applied to a power solar cell that is mainly used outdoors and particularly requires mechanical strength and reliability.
第７図ａ図及びｂ図に、透光性紫外線硬化型樹脂層を被
覆する削の状態を示す。ステンレス、アルミニウム等の
導電体よりなる基体１１に、Ｐ要領域、＾性饋城、ｎ型
領域のいずれか−ｊ−又は多層のアモルファスシリコン
Ｊ＋４１２を形成し、その表面全面にＩｎ２０Ｂ、５ｎ
０２等の透明導電層１３を形成し、その」二にクシ形電
極１４を形成する。クシ形電極１４の根幹部に一ト部外
付はリード１５を接続し、基体１１の裏面に下部外付け
り−ド１６ヲ接続スる。なお、アモルファスシリコンＪ
ｉｌｌ１２と透明導電層１３の形状寸法は、基体１１の
周辺をわずか残すように、基体１１のそれよりも−まわ
り小さく、従って基体１１の周辺が露出している。この
ようにして得られた装置は太陽電池として機能する。Figures 7a and 7b show the state of cutting to cover the translucent ultraviolet curable resin layer. Amorphous silicon J+412 is formed on the base 11 made of a conductive material such as stainless steel or aluminum, and is coated with In20B, 5n on the entire surface.
A transparent conductive layer 13 such as 02 is formed, and a comb-shaped electrode 14 is formed on the second layer. One external lead 15 is connected to the base of the comb-shaped electrode 14, and a lower external lead 16 is connected to the back surface of the base 11. In addition, amorphous silicon J
The dimensions of the illumination 12 and the transparent conductive layer 13 are smaller than that of the base 11 so that a small portion of the periphery of the base 11 is left, so that the periphery of the base 11 is exposed. The device thus obtained functions as a solar cell.
次に、第８図に示すように、透光性紫外線硬化型樹脂層
１７を形成する。すなわち、この樹脂層１７は、アモル
ファスシリコン、１ＦＪ１２の側面、透明導電１ａｉ１
１３の前面及び側面、並びにクシ形電極１４の全部と上
部外付けり−ド１５のっけ根を覆い、相当の厚み、例え
ば０．１〜２０ｆｆの厚みに形成する。この樹脂層１１
の形成方法は、前述した実施例の製法と同じように、樹
脂の印刷、レベリング工程、紫外線照射を繰り返すこと
により次第に厚く形成するか、或いは、基体１１の周辺
に沿って予め樹脂流出防止壁を築いておき、その中に紫
外線硬化樹脂を流し込み、紫外線照射により硬化させ、
６装によりこの工程を繰返して所定の厚みに達したのち
、防止壁を取り去る等の方法により形成される。Next, as shown in FIG. 8, a translucent ultraviolet curable resin layer 17 is formed. That is, this resin layer 17 is made of amorphous silicon, the side surface of 1FJ12, and the transparent conductive layer 1ai1.
13, all of the comb-shaped electrodes 14, and the bases of the upper external electrodes 15, and are formed to a considerable thickness, for example, 0.1 to 20 ff. This resin layer 11
As in the manufacturing method of the above-mentioned embodiments, the method for forming the . . . Once built, an ultraviolet curing resin is poured into it and cured by ultraviolet irradiation.
After this process is repeated for 6 times to reach a predetermined thickness, the prevention wall is removed or the like.
発明の効果
本発明によればアモルファス太陽電池の受光面上に透光
性紫外線硬化型樹脂層を形成しているから、表［１１ｉ
が保護されて損傷のおそれがなく、且つ、外気と遮断さ
れているため湿気等の悪影響を受けず、非常に信頼性の
高い大腸電池素子を得ることができる。また、透光性紫
外線硬化型樹脂層の厚みを厚くすることができるので、
これにより機械的強度を補強することができる。更に、
紫外線硬化型（至）脂の中に着色剤を配合すれば、様々
な美感の太陽電池が容易に得られる。Effects of the Invention According to the present invention, a translucent ultraviolet curable resin layer is formed on the light-receiving surface of an amorphous solar cell.
is protected and there is no risk of damage, and since it is isolated from the outside air, it is not affected by the adverse effects of moisture, etc., making it possible to obtain a highly reliable colon battery element. In addition, since the thickness of the translucent ultraviolet curable resin layer can be increased,
This can reinforce mechanical strength. Furthermore,
By incorporating colorants into ultraviolet-curable resins, solar cells with a variety of aesthetic qualities can be easily obtained.
本発明によれば、紫外線を短時間照射するだけで樹脂を
硬化させることができるので、製造時間の短縮と、製造
コストの低減を計ることができ、また、樹脂を硬化する
際、基板まで温度上昇しないので、基板材料の選択範囲
が広くなる。更に、紫外線硬化型樹脂には通常、有機溶
剤を含まないので、溶剤ガス処理の装置が不要となる。According to the present invention, it is possible to cure the resin by simply irradiating it with ultraviolet rays for a short period of time, so it is possible to shorten the manufacturing time and reduce the manufacturing cost. Since there is no rise in temperature, the selection range of substrate materials is widened. Furthermore, since ultraviolet curable resins usually do not contain organic solvents, no solvent gas treatment equipment is required.
また、紫外線硬化型導電Ａ、ペースト又はＯｕペースト
等を用い、印刷技術により電極を形成する実施態様にお
いては、紫外線硬化型樹脂層９を硬化させるための紫外
線照射装置をそのまま利用できる効果がある。Further, in an embodiment in which the electrodes are formed by printing technology using ultraviolet curable conductive A, paste, Ou paste, etc., there is an advantage that the ultraviolet irradiation device for curing the ultraviolet curable resin layer 9 can be used as is.
第１図は従来例を示す側面図である。第２図。
第８図ａ図及びｂ図、第４図ａ図及びｂ図、第５図は本
発明の一実施例の製造過程の説明図である。
第６図ａ図は本発明の一実施例を示す平面図、第６図す
図はその断面図である。第７図ａ図及びｂ図は本発明の
他の実施例の製造過程の説明図、第８図は本発明の他の
実施例を示す断面図である。
５・・・基板、
６・・・アモルファスシリコン層、
７・・・透明導電層、
９・・・透光性紫外線硬化型樹脂、
１０ａ、１０ｂ・・・電極、
１１・・・基体、
１２・・・アモルファスシリコン層、
１３・・・透明導電層、
１４・・・クシ形電極、
１５．１６・・・リード電極、
１７・・・透光性紫外線硬化型樹脂。
特許出願人 シャープ株式会社
同 東洋紡績株式会社
代理人 弁理士西１）新
第３図
第６図
第８図FIG. 1 is a side view showing a conventional example. Figure 2. Figures 8a and b, Figures 4a and b, and Figure 5 are explanatory diagrams of the manufacturing process of an embodiment of the present invention. FIG. 6A is a plan view showing an embodiment of the present invention, and FIG. 6A is a sectional view thereof. FIGS. 7a and 7b are explanatory diagrams of the manufacturing process of another embodiment of the present invention, and FIG. 8 is a sectional view showing another embodiment of the present invention. 5... Substrate, 6... Amorphous silicon layer, 7... Transparent conductive layer, 9... Transparent ultraviolet curing resin, 10a, 10b... Electrode, 11... Substrate, 12. ...Amorphous silicon layer, 13...Transparent conductive layer, 14...Comb-shaped electrode, 15.16...Lead electrode, 17...Transparent ultraviolet curing resin. Patent applicant Sharp Corporation Toyobo Co., Ltd. Agent Patent Attorney Nishi 1) New Figure 3 Figure 6 Figure 8
Claims (2)
覆されていることを特徴とするアモルファス太陽電池。(1) An amorphous solar cell characterized in that the front surface of the light-receiving surface is covered with a transparent ultraviolet curable resin layer.
れている特許請求の範囲第１項記載のアモルファス太陽
電池。(2) The amorphous solar cell according to claim 1, wherein the translucent ultraviolet curable resin layer contains a colorant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57113408A JPS594179A (en) | 1982-06-30 | 1982-06-30 | Amorphous solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57113408A JPS594179A (en) | 1982-06-30 | 1982-06-30 | Amorphous solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS594179A true JPS594179A (en) | 1984-01-10 |
| JPS6317342B2 JPS6317342B2 (en) | 1988-04-13 |
Family
ID=14611517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57113408A Granted JPS594179A (en) | 1982-06-30 | 1982-06-30 | Amorphous solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS594179A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010141111A (en) * | 2008-12-11 | 2010-06-24 | Sharp Corp | Solar battery device, method for manufacturing the same, and electronic device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4863690A (en) * | 1971-12-06 | 1973-09-04 |
-
1982
- 1982-06-30 JP JP57113408A patent/JPS594179A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4863690A (en) * | 1971-12-06 | 1973-09-04 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010141111A (en) * | 2008-12-11 | 2010-06-24 | Sharp Corp | Solar battery device, method for manufacturing the same, and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6317342B2 (en) | 1988-04-13 |
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