JPS5933273B2 - Semiconductor light emitting device mounting equipment - Google Patents
Semiconductor light emitting device mounting equipmentInfo
- Publication number
- JPS5933273B2 JPS5933273B2 JP54013587A JP1358779A JPS5933273B2 JP S5933273 B2 JPS5933273 B2 JP S5933273B2 JP 54013587 A JP54013587 A JP 54013587A JP 1358779 A JP1358779 A JP 1358779A JP S5933273 B2 JPS5933273 B2 JP S5933273B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- semiconductor light
- emitting device
- device mounting
- mounting equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
【発明の詳細な説明】
本発明は半導体発光素子の取付け装置に関し、その取付
け高さを任意の高さに選択することができるようにした
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a mounting device for a semiconductor light emitting device, which allows the mounting height to be selected as desired.
まず、従来のこの種装置について第１図、第２図を用い
て説明すると、１は半導体発光素子であり、２、３は金
属支持板である。First, a conventional device of this type will be explained with reference to FIGS. 1 and 2. Reference numeral 1 is a semiconductor light emitting element, and 2 and 3 are metal support plates.
前記金属支持板２、３はそれぞれが対をなしてその複数
の対が連結板４により予め一体に形成されており、半導
体発光素子１は各金属支持板２、３上で銀ペースト等の
導電性接合材により接合および金線５等を用いてボンデ
ングにより接続されている。６は前記半導体発光素子１
を保護する保護樹脂である。The metal support plates 2 and 3 each form a pair, and the plurality of pairs are integrally formed in advance by a connecting plate 4, and the semiconductor light emitting device 1 is coated with conductive material such as silver paste on each metal support plate 2 and 3. They are connected by bonding using a bonding material and by bonding using a gold wire 5 or the like. 6 is the semiconductor light emitting device 1
It is a protective resin that protects the
前記金属支持板２、３は前記半導体発光素子１を保護樹
脂６で保護した後、連結板４をプレス等で切断し、第２
図に示すように独立された金属支持板２、３に半導体発
光素子１が取付けられプこ部品として完成される。The metal supporting plates 2 and 3 are formed by protecting the semiconductor light emitting device 1 with a protective resin 6, and then cutting the connecting plate 4 with a press or the like.
As shown in the figure, the semiconductor light emitting device 1 is attached to independent metal support plates 2 and 3 to complete the package.
このようにして完成された部品を印刷配線基板等に実装
する際、取付け面から比較的高い位置に５ 半導体発光
素子１を位置させたい場合、金属支持板２、３をフォー
ミング加工したりして位置出しを行なつているが、これ
は非常に手間がかかり、また精度的にも難点があつた。When mounting the components completed in this way on a printed wiring board, etc., if it is desired to position the semiconductor light emitting device 1 at a relatively high position from the mounting surface, the metal support plates 2 and 3 may be formed. Positioning was performed, but this was very time consuming and also had problems with accuracy.
また連結板の切断突起片４ａをストッパーに利用する方
法も考えら１０れるが、これはその取付け高さが必然的
に決定されてしまうため、半導体発光素子１を任意の高
さに選択することができないため、凡用性がなく、不都
合である。本発明はこのような従来の欠点を解消したも
の１５であり、以下その一実施例について第３図、第４
図を用いて説明する。Another possibility is to use the cut protrusion piece 4a of the connecting plate as a stopper10, but since this inevitably determines the mounting height, it is not possible to select an arbitrary height for the semiconductor light emitting element 1. Because it cannot be used, it is not versatile and is inconvenient. The present invention eliminates such conventional drawbacks15, and an embodiment thereof will be described below in FIGS. 3 and 4.
This will be explained using figures.
第３図、第４図において、第１、２図の従来のものと同
一構成部分には同一番号が附してあり、本発明は予め金
属支持板２、３を複数個の連結板２０Ｔ、８、９、１Ｏ
、１１で連結する。In FIGS. 3 and 4, the same components as those in the conventional one shown in FIGS. 8, 9, 1O
, 11.
そして、この連結板Ｔ〜１１の切断時、実装時の条件に
よりその連結板７〜１１の残跡部を例えば第４図ａ、ｂ
に示すように突起片Ｔａとして残すか、ま、た９ａとし
て残すかを選択することによ２５り、この突起片Ｔａ、
９ａをストッパーに利用し、半導体発光素子１の取付け
高さを選択することができるものである。本発明は以上
のように、簡単な構成で半導体発光素子の実装時の取付
け高さを任意の高さに選択３０することができるもので
あり、しかもその高さ位置は金属支持板の連結板の残部
突起片をストッパーに利用するという簡単な手段で設定
され、極めて安価に実施できるという効果を有するもの
である。When the connecting plates T to 11 are cut, the remaining portions of the connecting plates T to 11 are cut, for example, in FIGS. 4a and 4b, depending on the mounting conditions.
By selecting whether to leave it as a protruding piece Ta or as a 9a as shown in 25, this protruding piece Ta,
By using 9a as a stopper, the mounting height of the semiconductor light emitting device 1 can be selected. As described above, the present invention allows the mounting height of the semiconductor light emitting device to be selected at any desired height with a simple configuration, and the height position is set at the connecting plate of the metal support plate. It is set by a simple means of using the remaining projection piece as a stopper, and has the effect that it can be implemented at an extremely low cost.
第１図は従来例を示す連結板の切断前の状態の一部断面
正面図、第２図は同連結板の切断後の状？を示す一部断
面正面図、第３図は本発明の一実帷例の連結板の切断前
の状態を示す一部断面正面図、第４図Ａ，ｂは同連結板
の切断後の状態をそミす一部断面正面図である。
・半導体発光素子、２，３・・・・・・金属支持板、・
・・・・・連結板、７ａ９９ａ・・・・・―突起片。Fig. 1 is a partial cross-sectional front view of a conventional connecting plate before cutting, and Fig. 2 shows the state of the connecting plate after cutting. FIG. 3 is a partially sectional front view showing the connecting plate of an example of the present invention before cutting, and FIGS. 4A and 4B show the connecting plate after cutting. FIG.・Semiconductor light emitting device, 2, 3...metal support plate,・
...Connecting plate, 7a99a...-Protrusion piece.
Claims (1)
属支持板上に半導体発生素子を取付け、かつ前記複数の
連結板を切断し、その切断による残跡部に突起片を選択
的に形成することにより前記半導体発光素子の実装高さ
を選択的に設定可能に構成してなる半導体発光素子の取
付け装置。1. A semiconductor generating element is mounted on a plurality of metal supporting plates that form a pair that are integrated by a plurality of connecting plates, and the plurality of connecting plates are cut, and protrusions are selectively formed in the portion left by the cutting. A mounting device for a semiconductor light emitting element, wherein the mounting height of the semiconductor light emitting element can be selectively set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54013587A JPS5933273B2 (en) | 1979-02-08 | 1979-02-08 | Semiconductor light emitting device mounting equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54013587A JPS5933273B2 (en) | 1979-02-08 | 1979-02-08 | Semiconductor light emitting device mounting equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55105390A JPS55105390A (en) | 1980-08-12 |
| JPS5933273B2 true JPS5933273B2 (en) | 1984-08-14 |
Family
ID=11837312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54013587A Expired JPS5933273B2 (en) | 1979-02-08 | 1979-02-08 | Semiconductor light emitting device mounting equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5933273B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6677614B1 (en) | 1992-12-17 | 2004-01-13 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
| JP2809951B2 (en) * | 1992-12-17 | 1998-10-15 | 株式会社東芝 | Semiconductor light emitting device and method of manufacturing the same |
| US6808950B2 (en) | 1992-12-17 | 2004-10-26 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device and method for manufacturing the device |
-
1979
- 1979-02-08 JP JP54013587A patent/JPS5933273B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55105390A (en) | 1980-08-12 |
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