JPS5932859B2 - Shadow mask and its manufacturing method - Google Patents

Shadow mask and its manufacturing method

Info

Publication number
JPS5932859B2
JPS5932859B2 JP57147740A JP14774082A JPS5932859B2 JP S5932859 B2 JPS5932859 B2 JP S5932859B2 JP 57147740 A JP57147740 A JP 57147740A JP 14774082 A JP14774082 A JP 14774082A JP S5932859 B2 JPS5932859 B2 JP S5932859B2
Authority
JP
Japan
Prior art keywords
shadow mask
electron beam
beam passage
manufacturing
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57147740A
Other languages
Japanese (ja)
Other versions
JPS5940443A (en
Inventor
恵美子 東中川
金光 佐藤
道彦 稲葉
康久 大竹
正治 関東
昌行 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57147740A priority Critical patent/JPS5932859B2/en
Priority to CA000435352A priority patent/CA1204143A/en
Priority to EP83108417A priority patent/EP0104453B1/en
Priority to KR1019830003999A priority patent/KR870000147B1/en
Priority to DE8383108417T priority patent/DE3378442D1/en
Priority to US06/526,824 priority patent/US4528246A/en
Publication of JPS5940443A publication Critical patent/JPS5940443A/en
Publication of JPS5932859B2 publication Critical patent/JPS5932859B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/14Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H01J9/142Manufacture of electrodes or electrode systems of non-emitting electrodes of shadow-masks for colour television tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2229/00Details of cathode ray tubes or electron beam tubes
    • H01J2229/07Shadow masks
    • H01J2229/0727Aperture plate
    • H01J2229/0733Aperture plate characterised by the material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2229/00Details of cathode ray tubes or electron beam tubes
    • H01J2229/07Shadow masks
    • H01J2229/0727Aperture plate
    • H01J2229/0777Coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Heat Treatment Of Sheet Steel (AREA)
  • ing And Chemical Polishing (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明はテレビ用のシヤドウマスクおよびその製造方法
に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a shadow mask for television and a method for manufacturing the same.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来からカラーテレビ受像管として広く使用されている
受像管としてシヤドウマスク管がある。
A shadow mask tube is a picture tube that has been widely used as a color television picture tube.

このシヤドウマスク管は第1図にその基本構造を斜視的
に示す如く多数の電子ビーム通過孔を持つたシヤドウマ
スク1とその個々の電子ビーム通過孔に対応して形成さ
れた三色螢光面2を有し、電子ビーム通過孔に入射する
電子銃3からの3本の電子ビームのそれぞれの入射角に
より色選択を行つている。なお、前記電子ビーム通過孔
の形状は、例えば第2図に断面的に示す如く散乱電子の
発生を避ける様な形状になつている。
As shown in perspective in FIG. 1, this shadow mask tube has a shadow mask 1 having a large number of electron beam passage holes, and a three-color fluorescent surface 2 formed corresponding to each electron beam passage hole. The color is selected based on the incident angle of each of the three electron beams from the electron gun 3 that enter the electron beam passage hole. The shape of the electron beam passage hole is such as to avoid the generation of scattered electrons, as shown in cross section in FIG. 2, for example.

しかしながら現在電子ビーム通過孔の形成に用いられて
いるフォトエッチング法では第2図の如く精度よく、均
一に電子ビーム通過孔を設ける事は困難であり、ドーミ
ング現象と呼ばれる色純度の低下を生じ易いという欠点
があつた。特に最近はテレビ画面の「きめの細かさ」に
対する一般的要求が高まり、送信方式が高品位テレビ方
式と呼ばれる方式に変更しつつある。これに対応して受
像管も更に性能を向上し、ドーミング現象がなく明哲で
きめの細かい画像を再現する事が望まれている。その為
電子ビーム通過孔を高密度高精度化じ、ピツチを小さく
したシヤドウマスクの開発がせまられている。またドー
ミング現象を生じる原因として、電子銃から発生する電
子ビームの80〜85%がシヤドウマスクに射突する事
による温度上昇に起因してシヤドウマスクが熱膨張し、
電子ビーム通過孔と螢光体モザイクとの電子ビーム軌通
上の相対位置関係が変化してドーミング現象を生じると
いう欠事もあつた。
However, with the photo-etching method currently used to form electron beam passage holes, it is difficult to form electron beam passage holes uniformly and accurately as shown in Figure 2, and it is easy to cause a decrease in color purity called a doming phenomenon. There was a drawback. Particularly recently, the general demand for "fine detail" on television screens has increased, and the transmission method is being changed to a method called a high-definition television method. Correspondingly, it is desired that the performance of picture tubes be further improved so that they can reproduce clear and fine-grained images without the doming phenomenon. Therefore, there is an urgent need to develop a shadow mask with a high density and high precision electron beam passage hole and a small pitch. Furthermore, the cause of the doming phenomenon is that 80 to 85% of the electron beam generated from the electron gun impinges on the shadow mask, causing the shadow mask to thermally expand due to the temperature rise.
Another drawback was that the relative positional relationship between the electron beam passage hole and the phosphor mosaic on the electron beam trajectory changed, resulting in a doming phenomenon.

〔発明の目的〕[Purpose of the invention]

本発明は以上の点に鑑み、シヤドウマスクの電子ビーム
通過孔を高密度で、かつ高精度に設けドーミング現象を
生じる事のない受像管を得る事のできるシヤドウマスク
およびその製造方法を提供する事を目的とするものであ
り、さらにシヤドウマスク材を選定する事により電子ビ
ームの射突による熱膨張を抑制し、高性能のものを得る
事ができるというものである。
SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a shadow mask and a method for manufacturing the same, which can provide a picture tube in which electron beam passing holes are provided in a shadow mask with high density and high precision and do not cause doming. Furthermore, by selecting a shadow mask material, it is possible to suppress thermal expansion due to electron beam impact and obtain a high performance product.

〔発明の概要〕[Summary of the invention]

本発明は少なくともシヤドウマスクの螢光面に対向する
面に{100}結晶面が35%以上集合しているシヤド
ウマスクおよびエツチングにより電子ビーム通過孔を形
成するシヤドウマスクの製造方法において、シヤドウマ
スク材を鍛造後、圧延面に{100}結晶面が集合する
如く熱間圧延を施す工程と、圧延率が50%/1回を超
えなk)冷間圧延および熱処理を施しシヤドウマスク原
板を得る工程と、前記シヤドウマスク原板の{100}
結晶面側にエツチングを施し電子ビーム通過孔を形成す
る工程を具備したシヤドウマスクの製造方法である。
The present invention provides a method for manufacturing a shadow mask in which at least 35% of {100} crystal planes are aggregated on the surface facing the fluorescent surface of the shadow mask, and an electron beam passing hole is formed by etching, after forging the shadow mask material. a step of performing hot rolling so that {100} crystal planes gather on the rolling surface, and a step of performing cold rolling and heat treatment to obtain a shadow mask original sheet, and a step of performing cold rolling and heat treatment, and the step of obtaining a shadow mask original sheet, {100}
This method of manufacturing a shadow mask includes a step of etching the crystal plane side to form an electron beam passage hole.

つまり本発明はシヤドウマスクにフオトエツチングによ
り電子ビーム通過孔を形成する際に、特に面心立法格子
構造、体心立方格子構造からなる合金のシヤドウマスク
にエツチングを施すことにより高密度でかつ、高精度な
電子ビーム通過孔が得られるというものである。
In other words, the present invention provides high-density and high-precision etching when forming electron beam passing holes in a shadow mask by photo-etching. This provides an electron beam passage hole.

さらに詳述すればシヤドウマスクの電子ビーム通過孔を
フオトエツチングにより形成する際に、その犬きさ、形
状を全面にわたつて微細でかつ均一に設ける為には、エ
ツチング速度がシヤドウマスク全面において一定にする
必要があり、これはエツチング面の結晶面を規定する事
により達成される点に着目したものである。つまりエツ
チング面において、結晶粒が不揃いになり{100}結
晶面の方向が異なつていると、エツチングされ易い結晶
粒と、されにくい結晶粒との部位でエツチング速度が異
なり、微細な電子ビーム通過孔を高密度、高精度で得る
ことが困難となる。そこで本発明に係るシヤドウマスク
は螢光面に対向する面、つまりエツチング処理を施す面
に{100}結晶面が35%以上集合したものである。
More specifically, when forming electron beam passage holes in a shadow mask by photo-etching, in order to make the size and shape fine and uniform over the entire surface, the etching speed must be constant over the entire surface of the shadow mask. This is achieved by defining the crystal plane of the etching surface. In other words, if the crystal grains on the etched surface are irregular and the directions of the {100} crystal planes are different, the etching speed will be different between the crystal grains that are easily etched and the crystal grains that are difficult to etch, resulting in fine electron beam passage holes. It becomes difficult to obtain with high density and high precision. Therefore, the shadow mask according to the present invention has 35% or more of {100} crystal planes gathered on the surface facing the fluorescent surface, that is, the surface to be etched.

なお{100}結晶面を35%以上集合させる事により
高精度でかつ高密度に電子ビーム通過孔が制御されたシ
ヤドウマスクを得る事ができるが、より好ましくは{1
00}結晶面を40%以上集合させる事が望ましい。こ
こで螢光面に対向する面(以後「マスク面」と呼称)に
{100}結晶面が集合している度合とは、次の様に定
義される。
A shadow mask in which the electron beam passing holes are controlled with high accuracy and density can be obtained by concentrating 35% or more of {100} crystal planes, but it is more preferable to use {100} crystal planes.
00} It is desirable to aggregate 40% or more of the crystal faces. Here, the degree to which {100} crystal planes are gathered on the surface facing the fluorescent surface (hereinafter referred to as "mask surface") is defined as follows.

即ち、多結晶の個々の粒の{100}結晶軸方向の、マ
スク面に垂直方向への成分を、全ての結晶性について集
計した割合で次の量で定義される。″ ここでVφは粒の体積比でφはマスク面垂直方向と{1
00}結晶軸とのなす角である。
That is, the component of the {100} crystal axis direction of each polycrystalline grain in the direction perpendicular to the mask surface is defined as the following amount, which is the summed ratio for all crystallinities. ″ Here, Vφ is the grain volume ratio, and φ is the direction perpendicular to the mask surface and {1
00} is the angle formed with the crystal axis.

また本発明に係る製造方法は上記の如くエツチング面を
{100}結晶面に揃える製造方法である。
Further, the manufacturing method according to the present invention is a manufacturing method in which the etched plane is aligned with the {100} crystal plane as described above.

まずシヤドウマスク材を鍛造した後、主たる肉厚減少工
程とする事が望ましい熱間圧延を施す工程において、圧
延面に{100}結晶面を集合させる。次に1回圧延率
50%以下の冷間加工および熱処理を必要に応じ複数回
繰り返し、シヤドウマスク原板を形成する。なお冷間加
工を圧延率50%以下/1回で行うのは、強加工を施し
た際、圧延面の結晶方向が{100}面からづれるのを
防止する為である。また上記の冷間圧延時の圧延率は実
用上10%〜30%とする事が好ましい。なお本発明に
おいて用いるシヤドウマスク材としては前述の如く、結
晶面を揃える上から面心立方格子構造、体心立方格子構
造を用いる事が好ましく、実用上インバ型合金を用いる
。このインバ型合金とは電子ビームの射突による温度上
昇にかかわらず殆んど膨張しないもので、熱膨張係数が
零に近いものであればよく、具体的にはインバ合金(3
6−SNp−63.5Fe)、超不変鋼(32Ni−5
C0−63Fe)、ステンレス不変鋼(54C0−9.
3Cr−36.5Fe)、43Pd一57Fe合金等を
用いる事が出来る。また本発明において上記冷問圧延後
に施す熱処理は、歪取焼鈍を行い{100}結晶面の安
定化を図る為のものである。
First, after forging the shadow mask material, {100} crystal planes are gathered on the rolled surface in a step of hot rolling, which is preferably the main thickness reduction step. Next, cold working at a rolling rate of 50% or less and heat treatment are repeated multiple times as necessary to form a shadow mask original plate. The reason why the cold working is performed at a rolling rate of 50% or less per time is to prevent the crystal direction of the rolled surface from being deviated from the {100} plane when strong working is performed. Further, the rolling ratio during the above-mentioned cold rolling is preferably set to 10% to 30% in practical terms. As described above, it is preferable to use a face-centered cubic lattice structure or a body-centered cubic lattice structure as the shadow mask material used in the present invention in order to align the crystal planes, and in practical use, an invar type alloy is used. This Invar alloy is one that hardly expands despite the temperature rise due to the impact of electron beams, so long as it has a coefficient of thermal expansion close to zero. Specifically, Invar alloy (3
6-SNp-63.5Fe), ultra-constant steel (32Ni-5
C0-63Fe), stainless steel (54C0-9.
3Cr-36.5Fe), 43Pd-57Fe alloy, etc. can be used. Further, in the present invention, the heat treatment performed after the cold rolling is performed to perform strain relief annealing to stabilize the {100} crystal plane.

なお所定の冷間圧延および熱処理を施してシヤドウマス
ク原板を得る工程において、例えば圧延率50%以下/
1回の冷間圧延を複数回施した後、最後に熱処理を施し
てもよいし、また各冷間圧延後に熱処理を施す操作を複
数回繰り返す事もできる。〔発明の実施例〕 実施例 1 36%Ni−Feなる成分のインバ合金を溶解し、その
鋳塊を連続熱間製線工程により、直径6關の線材とした
In addition, in the process of obtaining a shadow mask original plate by performing predetermined cold rolling and heat treatment, for example, a rolling rate of 50% or less/
After one cold rolling is performed multiple times, the final heat treatment may be performed, or the operation of performing the heat treatment after each cold rolling may be repeated multiple times. [Embodiments of the Invention] Example 1 An Invar alloy having a composition of 36% Ni-Fe was melted, and the ingot was made into a wire rod with a diameter of 6 mm through a continuous hot wire making process.

この線材を長手方向に直角に鍛造し、厚さ1mm1巾1
00mmの断面を有する板体とした。次に900℃の熱
間圧延により0.5mm厚さとした後、圧延率30%の
冷間圧延により0.3571tm厚、286mm巾の薄
板を得、これをロールに巻き取り、熱処理として真空中
で55『C,2時間の歪焼鈍を施した。さらにこの薄板
を圧延率30%の冷間圧延により0.245厚、408
巾の薄板とした後、同様に歪取焼鈍の熱処理を施した。
この様な冷間圧延および熱処理の操作を複数回繰り返し
、0.17!T7!L厚、1000mm巾のシヤドウマ
スク原板を得た。なお上記工程における熱間圧延後の表
面状態をX線回折を調べたところ、{100}結晶面が
40%集合しており、またその後の冷間圧延、熱処理後
においても安定した{100}結晶面が維持されていた
This wire rod is forged at right angles to the longitudinal direction, and has a thickness of 1mm and a width of 1mm.
The plate body had a cross section of 00 mm. Next, after hot rolling at 900°C to a thickness of 0.5 mm, a thin plate of 0.3571 tm thickness and 286 mm width was obtained by cold rolling at a rolling rate of 30%, which was wound into a roll and heated in a vacuum for heat treatment. 55'C, strain annealing was performed for 2 hours. Furthermore, this thin plate was cold rolled at a rolling ratio of 30% to a thickness of 0.245, 408
After it was made into a thin plate with a wide width, it was similarly subjected to strain relief annealing.
Such cold rolling and heat treatment operations were repeated several times, and the result was 0.17! T7! A shadow mask original plate having a thickness of L and a width of 1000 mm was obtained. In addition, when examining the surface condition after hot rolling in the above process by X-ray diffraction, it was found that 40% of {100} crystal faces were aggregated, and even after subsequent cold rolling and heat treatment, stable {100} crystals remained. The surface was maintained.

次に上記の如き方法により得た{100}結晶面が集合
した面を有するシヤドウマスク原板と、比較例として同
様の熱間圧延を行う後、圧延率80%/1回の冷間圧延
及び熱処理を施したシヤドウマスクについて、電子ビー
ム通過孔を設ける事のエツチング処理を施した場合の比
較を行つた。
Next, as a comparative example, a shadow mask original plate having a surface in which {100} crystal planes are assembled by the method described above was subjected to the same hot rolling, and then cold rolling and heat treatment at a rolling rate of 80% once. A comparison was made between the shadow masks that were subjected to etching treatment to provide electron beam passage holes.

例えば塩化第1鉄6%、塩酸0.1%の水溶液を用い、
65℃塩化第1鉄6%、塩酸0.1%の水溶液を用い、
65℃の温度でエツチングを施し、電子ビーム通過孔を
設けた。なお電子ビーム通過孔はシヤドウマスク原板の
両面に順次フオトエツチングを施し、第2図の如き形状
とした。
For example, using an aqueous solution of 6% ferrous chloride and 0.1% hydrochloric acid,
65℃ using an aqueous solution of 6% ferrous chloride and 0.1% hydrochloric acid,
Etching was performed at a temperature of 65° C. to provide electron beam passage holes. Note that the electron beam passage holes were formed into the shape shown in FIG. 2 by sequentially photoetching on both sides of the shadow mask original plate.

電子ビーム通過孔のピンチは約0.3mmとし、14型
テレビ用シヤドウマスクとして約52万個の電子ビーム
通過孔を形成した。この時のシヤドウマスク表面におけ
る電子ビーム通過孔を調べ、上記実施例−1によるもの
の部分拡大平面図を第3図に、上記比較例によるもの部
分拡大平面図を第4図に示す。なお図中の9は電子ビー
ム通過孔を示す。この結果から明らかな如く、本発明に
係るシヤドウマスクでは均一かつ高精度に電子ビーム通
過孔が形成されている事は明らかである。
The pinch of the electron beam passing holes was about 0.3 mm, and about 520,000 electron beam passing holes were formed as a shadow mask for a 14-inch television. The electron beam passing holes on the surface of the shadow mask at this time were examined, and a partially enlarged plan view of the mask according to the above-mentioned Example-1 is shown in FIG. 3, and a partially enlarged plan view of the mask according to the above-mentioned Comparative Example is shown in FIG. Note that 9 in the figure indicates an electron beam passage hole. As is clear from these results, it is clear that electron beam passing holes are formed uniformly and with high precision in the shadow mask according to the present invention.

実施例 2 上記実施例−1において冷間圧延時の1回の圧延率を2
0%とし、他は同様にして{100}結晶面が42%集
合したシヤドウマスクを製造した。
Example 2 In Example-1 above, the rolling rate at one time during cold rolling was set to 2.
A shadow mask in which 42% of {100} crystal planes were assembled was manufactured in the same manner as above.

この結果、実施例−1と同様の結果を得る事ができた。
実施例 3 上記実施例−1と同様の鍛造および熱間圧延を施し、0
.5mm厚さ、2007nm巾の薄板を得た後、1回の
圧延率8%程度の冷間圧延を複数回繰り返すいわゆる2
0段ロール法を用い、0.1mm厚さ、1000m7!
L巾で{100}結晶面が43%集合したシヤドウマス
ク原板を得た。
As a result, the same results as in Example-1 could be obtained.
Example 3 Forging and hot rolling were performed in the same manner as in Example-1 above, and 0
.. After obtaining a thin plate with a thickness of 5 mm and a width of 2007 nm, cold rolling is repeated multiple times at a rolling rate of about 8%.
Using the zero stage roll method, 0.1mm thickness, 1000m7!
A shadow mask original plate was obtained in which 43% of {100} crystal planes were assembled in L width.

次に550℃,2時間の歪取焼鈍の熱処理を施した後、
実施例−1と同様のフオトエツチングを施した。
Next, after applying strain relief annealing at 550℃ for 2 hours,
Photoetching was performed in the same manner as in Example-1.

この結果、第3図と同様に高精度で均一な電子ビーム通
過孔を得る事ができた。〔発明の効果〕 以上の結果から明らかな如く、本発明の製造方法を用い
るにより、表面に{100}結晶面が集合したシヤドウ
マスク原板を得る事ができ、このシヤドウマスク原板に
フオトエツチングにより電子ビーム通過孔を高密度、高
精度でかつ均一に設ける事ができる。
As a result, it was possible to obtain a highly accurate and uniform electron beam passage hole as shown in FIG. [Effects of the Invention] As is clear from the above results, by using the manufacturing method of the present invention, it is possible to obtain a shadow mask original plate in which {100} crystal planes are assembled on the surface. Holes can be provided uniformly with high density and precision.

この結果、従来のシヤドウマスクに比ベピツチ巾を約1
/3とする事ができ、電子ビーム通過孔の数を5倍程度
まで増加させる事が可能となり、かつドーミング現象等
のない高品位のものが得られる。さらに本発明において
はシヤドウマスク材を選定する事により熱膨張に起因し
たドーミング現象をも改良する事ができる。
As a result, the width has been reduced by approximately 1 compared to conventional shadow masks.
/3, the number of electron beam passing holes can be increased to about 5 times, and high quality products without doming phenomena can be obtained. Furthermore, in the present invention, the doming phenomenon caused by thermal expansion can also be improved by selecting a shadow mask material.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はシヤドウマスク管の原理を示す針視図、第2図
は電子ビーム通過孔の形状例を示す断面図、第3図は本
発明に係るシヤドウマスクを示す部分拡大平面図、第4
図は従来のシヤドウマスクを示部分拡大平面図である。 1・・・・・・シヤドウマスク、9・・・・・・電子ビ
ーム通過孔。
FIG. 1 is a needle perspective view showing the principle of a shadow mask tube, FIG. 2 is a sectional view showing an example of the shape of an electron beam passage hole, FIG. 3 is a partially enlarged plan view showing a shadow mask according to the present invention, and FIG.
The figure is a partially enlarged plan view showing a conventional shadow mask. 1...Shadow mask, 9...Electron beam passage hole.

Claims (1)

【特許請求の範囲】 1 エッチングにより電子ビーム通過孔を形成するシヤ
ドウマスクの製造方法において、シヤドウマスク材を鍛
造後、圧延面に{100}結晶面が集合する如く熱間圧
延を施す工程と、圧延率が50%/1回を超えない冷間
圧延および熱処理を施しシヤドウマスク原板を得る工程
と、前記シヤドウマスク原板の{100}結晶面側にエ
ッチングを施し電子ビーム通過孔を形成する工程とを具
備した事を特徴とするシヤドウマスクの製造方法。 2 少なくともシヤドウマスクの螢光面に対向する面に
{100}結晶面が35%以上集合している事を特徴と
するシヤドウマスク。 3 特許請求の範囲第2項においてシヤドウマスクが面
心立方格子構造、体心立方格子構造を有する合金からな
る事を特徴とするシヤドウマスク。 4 特許請求の範囲第2項においてシヤドウマスクがイ
ンバ型合金からなる事を特徴とするシヤドウマスク。
[Scope of Claims] 1. A method for manufacturing a shadow mask in which an electron beam passage hole is formed by etching, including a step of forging a shadow mask material and then hot rolling it so that {100} crystal planes gather on the rolled surface; a step of cold rolling and heat treatment not exceeding 50%/time to obtain a shadow mask original plate, and a step of etching the {100} crystal plane side of the shadow mask original plate to form an electron beam passage hole. A method for manufacturing a shadow mask characterized by: 2. A shadow mask characterized in that 35% or more of {100} crystal planes are aggregated at least on the surface facing the fluorescent surface of the shadow mask. 3. A shadow mask according to claim 2, characterized in that the shadow mask is made of an alloy having a face-centered cubic lattice structure and a body-centered cubic lattice structure. 4. A shadow mask according to claim 2, characterized in that the shadow mask is made of an Invar alloy.
JP57147740A 1982-08-27 1982-08-27 Shadow mask and its manufacturing method Expired JPS5932859B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP57147740A JPS5932859B2 (en) 1982-08-27 1982-08-27 Shadow mask and its manufacturing method
CA000435352A CA1204143A (en) 1982-08-27 1983-08-25 Textured shadow mask
EP83108417A EP0104453B1 (en) 1982-08-27 1983-08-26 Shadow mask, color picture tube and color television
KR1019830003999A KR870000147B1 (en) 1982-08-27 1983-08-26 Manufacturing method of shadov mask
DE8383108417T DE3378442D1 (en) 1982-08-27 1983-08-26 Shadow mask, color picture tube and color television
US06/526,824 US4528246A (en) 1982-08-27 1983-08-26 Shadow mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57147740A JPS5932859B2 (en) 1982-08-27 1982-08-27 Shadow mask and its manufacturing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP10602485A Division JPS6119737A (en) 1985-05-20 1985-05-20 Shadow mask base plate and its preparation

Publications (2)

Publication Number Publication Date
JPS5940443A JPS5940443A (en) 1984-03-06
JPS5932859B2 true JPS5932859B2 (en) 1984-08-11

Family

ID=15437066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57147740A Expired JPS5932859B2 (en) 1982-08-27 1982-08-27 Shadow mask and its manufacturing method

Country Status (2)

Country Link
JP (1) JPS5932859B2 (en)
KR (1) KR870000147B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04503401A (en) * 1989-02-17 1992-06-18 プフェファーレ・ウイリアム・シー Methods of operation of internal combustion engines and their devices

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59200721A (en) * 1983-04-27 1984-11-14 Toshiba Corp Manufacture of shadow mask
JPH0754671B2 (en) * 1985-10-30 1995-06-07 株式会社東芝 Shadow mask master plate manufacturing method, shadow mask master plate, shadow mask manufacturing method, and shadow mask
JPH0748652A (en) * 1986-06-04 1995-02-21 Nkk Corp Shadow mask original sheet excellent in press formability
KR100418813B1 (en) * 1996-11-08 2004-04-29 엘지마이크론 주식회사 Method for fabricating material of shadow mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04503401A (en) * 1989-02-17 1992-06-18 プフェファーレ・ウイリアム・シー Methods of operation of internal combustion engines and their devices

Also Published As

Publication number Publication date
JPS5940443A (en) 1984-03-06
KR840006100A (en) 1984-11-21
KR870000147B1 (en) 1987-02-12

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