JP2929881B2 - Metal sheet for shadow mask with excellent etching processability - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Fe-Ni-based alloy and an Fe-Ni-Co-based alloy having excellent etching workability, and more particularly to a preferable alloy thin plate for a shadow mask used for a color cathode ray tube.

[0002] In recent years, as the quality of color televisions has increased, alloys for shadow masks that can deal with the problem of color misregistration have been developed.
An Fe-Ni-based alloy containing 34 to 38 wt% Ni is used. This Fe-Ni alloy has a significantly lower coefficient of thermal expansion than low carbon steel conventionally used as a shadow mask material. Therefore, if a shadow mask is made of an Fe-Ni alloy, even if the shadow mask is heated by an electron beam, the problem of color shift due to thermal expansion of the shadow mask hardly occurs. In addition, Fe-Ni
-Co alloys are also promising.

[0003] Such an alloy thin plate for a shadow mask is usually processed into a shadow mask by the following steps. That is, a hole for passing an electron beam (hereinafter simply referred to as a “hole”) is formed on a thin alloy plate for a shadow mask by photoetching.
(Hereinafter, the alloy thin plate for a shadow mask that has been perforated by etching is referred to as a “flat mask”), and then the flat mask is annealed,
Next, the annealed flat mask is press-molded into a curved surface shape so as to conform to the shape of the cathode ray tube, then it is assembled into a shadow mask, and then the surface is subjected to a blackening treatment.

[0004] However, when such conventional Fe-Ni-based alloys and Fe-Ni-Co-based alloys are used, a larger number of pores are required as compared with a conventional low carbon steel shadow mask material. Poor etching processability. That is, in the case of the alloy, the corrosion resistance to the etchant is significantly lower than that of mild steel, and the crystal grain size is larger than that of mild steel.
When light is transmitted through the pores perforated by the etching, a flat mask becomes uneven, and the brightness of such a flat mask (brightness when light is transmitted) is a mild steel mask. Was inferior to Especially,
In a high-definition mask having a small hole diameter and a fine pitch, which has been rapidly increasing in recent years, the above-mentioned unevenness is apt to occur, and the brightness of the mask is inferior.

In particular, recently, there is a strong demand for screen brightness, and it is a serious problem that the brightness of the flat mask is inferior to such needs. Further, in the case of Fe-Ni-based alloys and Fe-Ni-Co-based alloys, there is a disadvantage that warpage tends to occur after etching, and in the case where such warpage is present, after the etching, an annealing step or a press forming step in a cathode ray tube manufacturer. Workability is significantly impaired. The following prior arts are known to solve these disadvantages in etching processability.

[0006] Japanese Patent Publication No. 2-9655 discloses that a {100} crystal plane is gathered at 35% or more on the surface of an Fe-Ni-based invar alloy thin plate, thereby enabling highly accurate and uniform etching. (Hereinafter referred to as “prior art 1”).

Japanese Patent Application Laid-Open No. 62-243782 discloses that {100} faces are gathered on a rolled face of an Fe—Ni-based invar alloy, and the surface roughness is Ra: 0.2 to 0.7 μm and Sm: 100 μm or less. By setting the crystal grain size to 8.0 or more, the etching speed is improved, and the quality of unevenness is improved (hereinafter referred to as “prior art 2”).

[0008]

However, in the prior art 1 described above, the {100} crystal plane of the invar alloy is set to 4
The accuracy and uniformity of etching are increased by assembling up to 3%. However, the flat mask obtained by this technique still does not disappear and the brightness of the flat mask is inferior. Had become.

Further, prior art 2 attempts to increase the etching speed of the Invar alloy and improve the quality of unevenness, but the flat mask obtained by this technique is still inferior in terms of brightness and quality. That was the problem. Incidentally, the crystal grain size described in this technology is 10.0 in the grain size number is the finest grain,
The crystal grain size corresponding to this crystal grain size number is given by the following formula (1)
According to this, it is 11 μm.

[0010]

(Crystal grain size No.) = 16.6439-6.6439 log (crystal grain size µm / 1.125) ─ (1)

In the above prior art, the problem of warpage after etching has not been improved.

[0012]

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above-mentioned circumstances, and has been devised through repeated studies.
A shadow mask that has excellent etching processability, enables high-precision and uniform etching perforation, and enables the brightness of a flat mask after etching perforation to be at an excellent level, and also suppresses warpage after etching appropriately. Fe-
It has succeeded in obtaining Ni-based and Fe-Ni-Co-based alloy thin plates, and is as follows.

(1) It is made of a Fe—Ni alloy or an Fe—Ni—Co alloy containing Fe and Ni as main components, and {111}, {100}, {110}, {311 ｝,
The degree of integration of each crystal plane of {331}, {210}, and {211} shows the values in the table below, and their ratio [{1
00｝ + ｛311｝ + ｛210｝] / [｛110｝ +
{111} + {331} + {211}] is 0.8 to 20, wherein the metal sheet for a shadow mask is excellent in etching workability.

[0014]

[Table 1]

(2) The composition described in (1) and the degree of crystal integration on the surface of the alloy plate and their ratio, and the crystal grain size in the plate thickness direction of the alloy plate is 10 μm or less. A metal sheet for shadow masks with excellent etching processability.

[0016]

The present invention as described above will be further described. The present invention is characterized in that when a fine pattern is formed by photoetching on an alloy thin plate made of an Fe-Ni or Fe-Ni-Co alloy, In order to provide a uniform shape over the entire surface, it is necessary to make the etching rate constant and high over the entire surface. To this end, it is important to increase the etching factor. This is achieved by controlling the ratio of the degree of integration of the specific crystal plane to the surface (surface) and controlling the crystal grain size in the thickness direction of the alloy plate.

Further, in order to make the brightness of the flat mask after the etching perforation to an excellent level, it is important that the surface roughness (Ra) of the interface of the etching hole is not more than a specific value. This is achieved by controlling the degree of integration of a specific crystal plane on the etched surface (alloy plate surface). Suppression of warpage after etching can be achieved by controlling the degree of integration of a specific crystal plane on the etched surface.
The present invention focuses on these points.

The Fe-Ni system for a shadow mask of the present invention and
The reasons for limiting the degree of integration and the crystal grain size of the crystal plane of the Fe-Ni-Co alloy thin plate are described below.
And Fe-Ni-Co alloys have the effect of preventing the occurrence of color misregistration.
The upper limit of the average coefficient of thermal expansion in the temperature range of 0 to 100 ° C. needs to be 2.0 × 10 ⁻⁶ / ° C. The average coefficient of thermal expansion depends on the amount of nickel, and the amount of Ni satisfying the condition of the average coefficient of thermal expansion is in the range of 34 to 38%. In addition, even in such a range of the Ni content, a preferable Ni amount capable of lowering the average thermal expansion coefficient is 35 to 37 wt%,
Further, the more preferable amount of Ni that can further reduce the average thermal expansion coefficient is 35.5 to 36.5 wt%.

The above-mentioned average thermal expansion coefficient is not affected even when 0.001 to 1% of cobalt is contained. Further, in a Fe-Ni-Co alloy, 3-6% of Co, Ni
Even better properties can be obtained by setting the amount to 30 to 33%.

In the present alloy, the (111), (200), (220), (3)
11), (331), (420) and (422), the X-ray diffraction intensities of the respective diffraction planes are obtained, and the degree of integration of the crystal orientation can be measured based on these. For example, for the degree of integration of the {111} crystal plane, the relative X-ray intensity ratio of the (111) diffraction plane is represented by (111), (200), (220), (311),
It was determined by dividing by the sum of the relative X-ray intensity ratios of the diffraction planes of (331), (420) and (422).

The other {100}, {110}, and {31}
The degree of integration of the {1}, {331}, {210}, and {211} crystal planes is similarly obtained. Here, the relative X-ray diffraction intensity ratio is obtained by dividing the X-ray diffraction intensity measured on each diffraction surface by the theoretical X-ray intensity of the diffraction surface. That is, for example, the relative X-ray diffraction intensity ratio of the (111) diffraction surface is obtained by dividing the X-ray diffraction intensity of the (111) diffraction surface by the theoretical X-ray diffraction intensity of the (111) diffraction surface.

Also, {100}, {110}, and {21}
The degree of integration of each crystal plane of {0} and {211} is (200), (220), and (42)
0) and (422) were obtained by dividing the relative X-ray diffraction intensity ratios of the diffraction surfaces by the sum of the relative X-ray diffraction intensity ratios of the seven diffraction surfaces from (111) to (422).

Further, the present inventors have found that Fe-Ni and Fe-Ni
-{111}, {100}, {1}
It has been found that by controlling the degree of integration of the {10} and {311} crystal planes, the occurrence of warpage after etching can be suppressed and the quality of unevenness can be improved. In other words, the accumulation of {100} crystal planes is an effective crystal plane for suppressing warpage after etching. When the degree of integration of the {100} crystal plane is 50% or more, the occurrence of warpage after etching is suppressed. However, the degree of integration of {100} crystal planes is 93%
If it exceeds, etching unevenness occurs, which is a problem. From these facts, the degree of integration of the {100} crystal plane is determined to be 50% or more and 93% or less.

On the other hand, {111}, {110}, {311}
The integration of crystal planes increases the tendency of warpage after etching.
The degree of integration of {111} crystal plane exceeds 5%, the degree of {110} crystal plane integration exceeds 24%, and the degree of {311} crystal plane integration is 10
%, Warpage after etching becomes remarkable,
This is a problem in the quality of the flat mask. In addition, these $ 11
If the degree of integration of the 1 {, {110}, and {311} crystal planes is less than 1%, an etching factor described later cannot be at an excellent level. Therefore, the degree of integration of {111} crystal plane ≦ 5%, the degree of integration of {110} crystal plane ≦ 24%, {31
The degree of integration of the 1｝ crystal plane was determined to be 1 to 10%.

Further, the present inventors have proposed that Fe-Ni-based and Fe-
{311}, {210},
By controlling the degree of {211} crystal plane integration and the ratio of these crystal plane integration degrees, the etching factor can be improved, the surface roughness (Ra) of the etching hole interface can be reduced, and the brightness of the flat mask can be reduced. I found that the level could be excellent. That is, FIG.
1}, {110}, {311}, and {100} are within the scope of the present invention, and alloy thin plates having various degrees of integration of the crystal planes of {331}, {210}, and {211} on the alloy plate surface. Was measured, and the amount of light transmission of the obtained flat mask was measured, and this value was divided by the amount of light transmission of a flat mask made of a conventional mild steel perforated with the same dimensions as the above alloy, and this was divided by the light amount of the flat mask. The relationship between the transmittance and the surface roughness (Ra) at the interface of the etching hole is plotted as the transmittance. Here, the surface roughness was measured by the method described in Example 1 described later.

According to FIG. 1, {331}, {2}
The degree of integration of each crystal plane of 10｝ and {211} is 14
% Or less, 10% or less, and also 10% or less, the surface roughness (Ra) of the interface of the etching hole becomes 0.90 μm or less,
It can be seen that the light transmission ratio of the flat mask is 1.0 or more, and a brightness higher than the light transmission amount of the conventional mild steel flat mask can be obtained. Regarding the relationship between the brightness of the flat mask and the surface roughness of the interface of the etching hole, the correlation with other roughness parameters was examined. The center line average roughness (Ra) showed the strongest correlation.

In the present invention, when the degree of integration of the {111}, {100}, and {110} crystal planes is controlled to a specific value as described above, {331}, {21}
If the degree of integration of the {0} and {211} crystal planes is less than 1%, an etching factor described later cannot be at an excellent level.

From the above examination results, the conditions for setting the brightness of the flat mask to an excellent level and the etching factor to an excellent level are:
The degree of integration of the 31 crystal plane is 1 to 14%, the degree of integration of the {210} crystal plane is 1 to 10%, and the degree of integration of the {211} crystal plane is 1
〜１０10%.

The degree of integration of the {331} crystal plane exceeds 14%,
Alternatively, when the degree of integration of the {210} crystal plane exceeds 10% or the degree of integration of the {211} crystal plane exceeds 10%, microscopic pits (concavities and convexities) appear on the raw surface when viewed from the microscopic viewpoint. Has been generated. From this, it is considered that the reason why the roughness (Ra) of the etching hole interface exceeds 0.90 μm is due to the generation of such pits.

Control of the crystal plane integration ratio of the seven main surfaces on the alloy plate surface is necessary to improve the etching factor. FIG. 2 shows the etching factor and unevenness quality of the alloy sheet and [{100} + {311} + {210}] /
[{110} + {111} + {331} + {211}]
Is summarized and shown. The etching factor was determined by the same method as described in Example 1 below.
The degree of integration of the seven main crystal planes was determined by the X-ray diffraction technique as described above. Further, the quality of the unevenness was determined by observing with the naked eye, and those having no unevenness were A, those having severe unevenness and having practical problems were E, and those B to D were those between A and E. Therefore, A to C have no practical problem.

According to FIG. 2, the above relational expression [｛10
0｝ + ｛311｝ + ｛210｝] / [｛110｝ + ｛1
[11+ {331} + {211}], the etching factor increases. However, in the present invention, as an etching factor having no practical problem, 20
Was determined, and 0.8 was determined as the lower limit of the value of the above-mentioned relational expression that is an etching factor equal to or greater than this value. If the value of the above-mentioned relational expression exceeds 20, the quality of unevenness deteriorates and there is a practical problem. From these facts, the uneven quality is as good as A to C,
Further, 0.8 to 20 is determined as the range of the value of the above-mentioned relational expression that can obtain the high etching factor intended in the present invention.

In the present invention, as described above, the etching factor can be improved by controlling the ratio of a specific degree of crystal plane integration on the surface of the alloy thin plate. In order to further improve the etching factor, the crystal grain size in the thickness direction of the alloy plate is set to 10 μm, which is smaller than the conventional level.
As shown in FIG. 3, the same relational expression [{100} + {311}
+ {210}] / [{110} + {111} + $ 33
The etching factor can be further increased with the value of {1} + {211}.

As described above, the upper limit of the crystal grain size in the alloy plate thickness direction for increasing the etching factor is set to 10
μm. FIG. 4 shows the relational expression [{100} + {311} + {210}] / [{1
10｝ + {111} + {331} + {211}]
This shows the relationship between the etching factor and the crystal grain size in the thickness direction of the alloy thin plate when the constant is 4.0.

As described above, the alloy for a shadow mask according to the present invention has the basic composition of Fe-Ni or Fe-Ni-Co, the degree of integration of crystal planes on the alloy plate surface and the ratio thereof, and the alloy composition of the alloy plate. It is characterized by defining the crystal grain size in the plate thickness direction, respectively. In addition to the above composition, C: 0.0050% or less, Mn: 0.35% or less, Si: 0.05% or less, Cr: 0 .05
%, N: 0.0015% or less, and O: 0.0020% or less. Co as an impurity is 1.0 wt.%
Until it does not affect the characteristics. In addition, it is desirable to control the amount of impurities in the Fe-Ni-Co-based alloy in the same manner except for Co.

In order to set the degree of crystal plane integration on the surface of the alloy sheet to the value specified in the present invention, the solidification to the hot working and the subsequent cold rolling and annealing steps involved in the production of the alloy sheet. This is achieved by adopting manufacturing conditions that minimize the formation of these crystal planes. For example, when this alloy is produced from a hot-rolled steel strip obtained by subjecting an ingot or a continuously cast slab to hot-rolling, after hot rolling, appropriate hot-rolled sheet annealing may be performed. {111}, {110},
{211}, {100} are {331}, {210},
It is effective to control the accumulation of {211} crystal planes. At this time, the temperature of the hot-rolled sheet annealing is set to an appropriate temperature in the range of 910 to 990 ° C. according to the rolling reduction in hot rolling. Can be selected and implemented.

According to the present invention, cold rolling and subsequent annealing are performed in accordance with the degree of crystal plane integration on the surface of the alloy sheet after the above-described hot-rolled sheet annealing, and then finish cold rolling is performed to remove strain. When manufacturing in the process of applying, this cold rolling rate,
This is achieved by combining annealing conditions (temperature, time, heating rate) and a series of steps of finish cold rolling to optimal conditions. The effect of the hot-rolled sheet annealing described above is exhibited when the hot-rolled steel strip of the present alloy is sufficiently recrystallized before hot-rolled sheet annealing.

Further, in order to obtain the degree of integration of the three crystal planes intended in the present invention, it is not preferable to perform a heat treatment for homogenizing the slab after the slab rolling in producing the present alloy. For example, when the homogenizing heat treatment is performed at a temperature of 1200 ° C. or more and 10 hours or more, at least one of the above-described degrees of integration of the seven crystal planes exceeds the prescribed value of the present invention. Processing must be avoided.

[0038]

Next, the present invention will be described in more detail with reference to specific examples.

Example 1 An ingot of an alloy having the chemical components shown in Table 2 was obtained by ladle refining.

[0040]

[Table 2]

Each of the steel ingots obtained as described above is then treated, subjected to slab rolling, surface removal, and hot rolling (heating at 1100 ° C. for 3 hours) to form a hot-rolled steel strip. Using the hot-rolled steel strip thus obtained, hot-rolled sheet annealing (910 to 990 ° C.) was performed, and thereafter, the cold-rolling annealing conditions and the finish cold-rolling conditions were changed, and Tables 3 to 6 were used. (Material Nos. 1 to 40) having the degree of crystal plane integration and the crystal grain size in the thickness direction of the alloy sheet as shown in FIG. Each hot-rolled steel strip is sufficiently recrystallized after hot-rolling, and {111}, {1}
00, {110}, {311}, {210}, {21
The measurement of the degree of integration of the 1｝ crystal plane was obtained by the method using X-ray diffraction as described above.

[0042]

[Table 3]

[0043]

[Table 4]

[0044]

[Table 5]

[0045]

[Table 6]

Next, a resist pattern was provided on the surface of these alloy plates, and the etching factor at a resist opening diameter of 135 μm was measured. The etching factor was calculated by the method shown in FIG. 5 after etching the sample at 45 Baume, a FeCl ₃ solution, a liquid temperature of 40 ° C. and a spray pressure of 2.5 kgf / cm ^{2 for} 50 seconds. Further, a similar alloy plate was used as a flat mask by photoetching, the amount of transmitted light was measured, and this value was divided by the amount of transmitted light of a conventional flat mask made of mild steel perforated with the same dimensions as the alloy described above. This was defined as the light transmittance of the flat mask. The amount of warpage after etching was determined by placing the flat mask after etching on a horizontal surface plate and measuring the height of the warpage.

The surface roughness of the interface between the etching holes in these flat masks was measured by a non-contact type laser roughness meter. The cutoff value was 0.02 mm, and the tapered portion at the hole interface was removed as a waviness component to extract a roughness curve, and the center line average roughness (Ra) was determined from this curve. Further, the unevenness quality of the flat mask was determined by visual observation, and was determined based on the same standard as in FIG.

As is apparent from the results shown in Tables 3 to 6, {111}, {100}, and {11} within the scope of the present invention.
0, {331}, {311}, {210}, {21
Degree of integration of 1｝ crystal plane and [{100} + {311} +
{210}] / [{110} + {331} + {211}
+ {111}], the amount of warpage after etching is 2 mm or less, which is lower than that of a comparative example described later, and the surface roughness (Ra) of the interface of the etching hole. is 0.
90 μm or less, and the light transmittance of the flat mask is also 1.
It can be seen that a brightness equal to or higher than 0 and higher than the light transmittance of a conventional mild steel flat mask can be obtained. Further, the etching factor of these materials is 2.0 or more, and the uneven quality of the flat mask is at a level that does not cause any practical problem.

In particular, materials No. 18, No. 16, No. 17, No. 3
1, No. 34 and No. 38 are [{100} + $ 3
11｝ + ｛210｝] / [｛110｝ + ｛331｝ +
{211} + {111}] is 2, but compared to No. 18, the alloy plates of No. 16, No. 38, No. 31, No. 17 and No. 34 The crystal grain size in the thickness direction is 10 μm or less, which is smaller than the conventional level, the etching factor shows a higher value, and it is clear that the etching property is more excellent. Furthermore, these materials No.16, No.38,
Among the materials No. 31, No. 17 and No. 34, the material having a smaller crystal grain size in the thickness direction of the alloy plate has a higher etching factor. It is understood that it is important to reduce the crystal grain size in the plate thickness direction. Also, Fe-Ni-Co
Nos. 41 to 43 of the E, G and H steels of the series also show excellent characteristics.

With respect to these examples of the present invention, materials No. 1 to N
Each material of o.5 has a {111} crystal plane integration degree exceeding the upper limit specified in the present invention, a {100} crystal plane integration degree lower than the lower limit specified in the present invention, or higher than the upper limit.
0｝ crystal plane density exceeds the upper limit of the present invention,
The degree of integration of the {311} crystal plane exceeds the upper limit specified in the present invention, and the amount of warpage after etching is 7 mm or more, which is larger than that in the above-described present invention.

The materials No. 6 to No. 8 are respectively
{331} crystal planes exceeding the upper limit specified in the present invention, {2}
A crystal plane exceeding the prescribed conditions of the present invention, {21}
1) The crystal plane exceeds the upper limit specified in the present invention, the surface roughness (Ra) of the interface of the etching hole exceeds 0.90 μm, and the light transmittance of the flat mask is less than 1.0. Lower than.

Further, Material No. 14 has a {100} crystal plane density exceeding the upper limit specified in the present invention, [{100} +
{311} + {210}] / [{110} + {111}
+ {331} + {211}] exceeds the upper limit specified in the present invention, and the uneven quality of the flat mask is inferior to that of the present invention. In material No.3, $ 21
The degree of integration of the 0 ° crystal plane is also below the lower limit of the present invention, and the level intended in the present invention cannot be obtained when the etching factor is less than 2.00.

Each of the materials No. 9 to No. 13 is $ 21
1} crystal plane density, {210} crystal plane density, {3}
The degree of integration of the 31 crystal plane, the degree of integration of the {311} crystal plane,
[{100} + {311} + {210}] / [{11
0} + {111} + {331} + {211}] is less than the lower limit of the present invention, and any material has an etching factor of less than 2.00 and a high level intended in the present invention. Is not obtained.

As is apparent from the above description, {111}, {100}, {110},
The degree of integration of {311}, {331}, {210}, and {211} crystal planes, and [{100} + {311} + {2
10}] / [{110} + {111} + {331} +
By setting the value of {211} within the range of the present invention,
To reduce the warpage after etching, control the surface roughness (Ra) at the interface of the etching hole, to achieve a level of light transmittance of the flat mask, and to improve the etching factor and the uneven quality of the flat mask. By further reducing the crystal grain size in the thickness direction of the alloy plate within the range of the present invention, it is possible to further increase the etching factor. That is, according to the present invention, it can be seen that Fe-Ni-based and Fe-Ni-Co-based alloy thin plates for shadow masks having excellent etching workability can be obtained.

[0055]

According to the present invention as described above, the etching processability is excellent, the occurrence of warpage after etching is extremely small, the etching factor is high, and the brightness of the flat mask is excellent. Since it is possible to provide Fe-Ni-based and Fe-Ni-Co-based alloy thin plates for shadow masks which also have excellent unevenness quality of flat masks, industrially advantageous effects are brought about and the effects are great. It is an invention.

[Brief description of the drawings]

FIG. 1 is a table showing the relationship between the light transmittance of a flat mask and the surface roughness (Ra) of the interface of an etching hole.

[FIG. 2] Etching factor, uneven quality and [$ 10
0｝ + ｛311｝ + ｛210｝] / [｛110｝ + ｛1
11} + {331} + {211}].

FIG. 3 shows an etching factor and [$ 100 + $ 31]
1｝ + ｛210｝] / [｛110｝ + ｛111｝ + ｛3
31} + {211}] and a table showing the relationship with the crystal grain size in the thickness direction of the alloy plate.

FIG. 4 is a table showing a relationship between an etching factor and a crystal grain size in a thickness direction of an alloy plate.

FIG. 5 is a diagram illustrating a method of measuring an etching factor.

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tomoyoshi Ohkita 1-2-1, Marunouchi, Chiyoda-ku, Tokyo Inside Nippon Kokan Co., Ltd. (72) Yoshiaki Shimizu 1-2-1, Marunouchi, Chiyoda-ku, Tokyo Japan (56) References JP-A-63-193440 (JP, A) JP-A-1-204333 (JP, A) JP-A-1-247558 (JP, A) JP 2-9655 (JP) , B2) (58) Field surveyed (Int. Cl. ⁶ , DB name) C22C 38/00 302 H01J 29/07

Claims (4)

(57) [Claims] 1. An alloy comprising Fe and Ni as main components,
And {111}, {100}, {11}
0}, {311}, {331}, {210}, {21
The degree of integration of each crystal plane of 1% is shown in the following table, and their ratio [{100} + {311} + {21}
0｝] / [｛110｝ + ｛111｝ + ｛331｝ + ｛2
11｝] is 0.8 to 20. A metal sheet for a shadow mask having excellent etching processability. 2. An alloy mainly composed of Fe, Ni and Co, and {111}, {100},
{110}, {311}, {331}, {210},
The degree of integration of each crystal plane of {211} shows the value in the following table, and their ratio [{100} + {311} + {2
10}] / [{110} + {111} + {331} +
{211} is from 0.8 to 20. A metal sheet for a shadow mask excellent in etching workability. 3. The alloy according to claim 1, which has a degree of crystal integration on the surface of the alloy plate and a ratio thereof, and a crystal grain size in the thickness direction of the alloy plate is 10 μm or less. Metal sheet for shadow mask with excellent etching processability. 4. The alloy according to claim 2, which has a degree of crystal integration on the surface of the alloy plate and a ratio thereof, and has a crystal grain size in the thickness direction of the alloy plate of 10 μm or less. Metal sheet for shadow mask with excellent etching processability.