JP3336691B2 - Alloy thin sheet for electronics with excellent etching processability - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic alloy thin plate having excellent etching processability and suitable as a material for a shadow mask or an IC lead frame.

2. Description of the Related Art In recent years, Fe—Ni alloys have been used as materials for shadow masks and IC lead frames of color television picture tubes. This Fe-Ni-based alloy has a significantly lower coefficient of thermal expansion than a conventionally used low-carbon steel. For this reason, for example, a shadow mask made of a Fe-Ni-based alloy thin plate is heated by an electron beam. Also, the problem of color shift due to thermal expansion hardly occurs.

[0002] Photo-etching is applied to Fe-Ni-based alloy thin plates used for shadow masks and IC lead frames. Conventional Fe-Ni-based alloy thin plates have etching workability as compared with low carbon steel materials. There is a disadvantage that it is inferior. That is, since the Fe-Ni-based alloy has significantly smaller corrosion resistance to the etching solution than the low-carbon steel and has a larger crystal grain size than the low-carbon steel, variations in the hole diameter and the hole shape when drilled by etching are caused. growing.
For this reason, when used as a material for a shadow mask, when light is transmitted through the pores formed by etching, the mask becomes uneven, and the brightness of the mask when transmitting light is increased. Has the disadvantage that it is inferior to low carbon steel masks. In particular, in the case of a high-definition mask having a small hole diameter and a fine pitch which has been rapidly increasing in recent years, the above-described problem is likely to occur, and the quality of a color television picture tube is remarkably deteriorated. Further, recently, there is a tendency that the brightness of the screen is strongly required, and it is a great disadvantage that the brightness of the mask is inferior to such needs. Also, I
With regard to C lead frame materials, the pin pitch of the lead frame is becoming finer due to the recent increase in the density (higher integration) of ICs. Due to the above problem, it is not possible to sufficiently cope with such a fine pin interval.
Further, the conventional Fe—Ni-based alloy also has a problem that the plating property after etching is inferior.

Conventionally, the following techniques have been proposed in order to solve the problem of the etching workability of Fe-Ni-based alloys. Japanese Patent Publication No. 2-9655 proposes an invar alloy thin plate in which 35% or more of {100} crystal planes are gathered on the plate surface as an invar alloy thin plate capable of performing highly accurate and uniform etching. In Japanese Patent Application Laid-Open No. Sho 62-243782, in order to improve the etching speed and improve the uneven quality,
A {100} plane is gathered on the rolled surface of the Fe—Ni-based invar alloy, and the surface roughness is Ra 0.2 to 0.7 μm and Sm.
It has been proposed that the grain size be 100 μm or less and the grain size be 8.0 or more. Japanese Patent Application Laid-Open No. 2-270941 discloses that in order to improve the etching speed, a {200} plane is integrated on a rolled surface of an Fe—Ni-based invar alloy by 50% or more, a C content is 0.007 wt% or less, and an impurity element is added. P of:
It has been proposed to make the content of 0.005 wt% or less, S: 0.005 wt% or less, and the content of other impurity elements 0.10 wt% or less.

[0004]

However, the above technique can improve the accuracy and uniformity of etching, but cannot prevent the occurrence of haze and unevenness when used as a shadow mask, and the brightness of the mask is low. It has the disadvantage of being inferior to steel masks. In addition, although the etching speed is improved and the quality of unevenness when a shadow mask is used is improved, the brightness of the shadow mask is inferior to that of a low carbon steel mask. Further, there is a problem that the IC lead frame material obtained by the above technique has a large side etch, and the processing accuracy is poor when processing as a lead frame.

Further, in any of the above techniques,
There is a problem that the plating property of the IC lead frame material processed by etching is inferior. For example, if the IC lead frame material obtained by the above technique is subjected to solder plating, needle-like crystals called whiskers grow abnormally, causing a problem in quality. The present invention has been made in view of the above-described problems of the related art, and enables uniform etching with high accuracy, a high etching factor, excellent plating properties after etching, and a shadow mask. It is an object of the present invention to provide an electronic alloy thin plate which is excellent in uneven quality at the time of performing the method and has a very good mask brightness.

[0006]

Means for Solving the Problems The present inventors have proposed Fe-N
In order to provide an etching hole having a uniform size and shape over the entire surface of the material when the i-type alloy thin plate is etched and punched, it is necessary to make the etching rate constant and sufficiently fast over the entire surface of the material. In order to achieve this, it is important to increase the etching factor (defined in FIG. 5), and to increase the etching factor, the integration of a specific crystal plane on the etching surface (alloy plate surface) It has been found that controlling the degree ratio and controlling the crystal grain size in the thickness direction of the alloy plate is extremely effective. Further, in order to obtain excellent levels of plating properties and the brightness of the shadow mask after etching perforation, it is important that the surface roughness (Ra) of the etched end face (a in FIG. 5) be equal to or less than a specific value. It has been found that such surface roughness of the etched end face can be obtained by controlling the degree of integration of a specific crystal face on the etched face (alloy plate surface).

The present invention has been made based on such findings.
The characteristic configuration is as follows. (1)Fe-Ni system with Ni content of 34-38 wt%
Alloy thin plate,{331}, # 21 on alloy plate surface
The degree of integration of each crystal plane of {0} and {211} is {33}
1}: 14% or less, {210}: 14% or less, {21}
1｝: Etch that is 14% or less and satisfies the following expression
Alloy sheet for electronics with excellent workability. 0.2 ≦ {210} / ({331} + {211}) ≦ 1.0 where {331}: degree of integration of {331} crystal plane (%) {210}: degree of integration of {210} crystal plane ( %) {211}: degree of integration of {211} crystal plane (%)(2) Fe-Ni based alloy having a Ni content of 38 to 52 wt%
Alloy thin plate, {331}, {21} on the surface of the alloy plate
The degree of integration of each crystal plane of {0} and {211} is {33}
1}: 14% or less, {210}: 14% or less, {21}
1｝: Etch that is 14% or less and satisfies the following formula
Alloy thin sheet for electronics with excellent workability. 0.2 ≦ {210} / ({331} + {211}) ≦ 1.0 However, {331}: Degree of integration of {331} crystal plane (%) {210}: Degree of integration of {210} crystal plane (%) {211}: degree of integration of {211} crystal plane (%)

[0008](3) Ni content is 28-38 wt%,
Fe-Ni-C having a Co content of more than 1 wt% and 7 wt% or less
o-based alloy sheet,{331}, {2} on alloy plate surface
The degree of integration of each crystal plane of {10} and {211} is {33}
1}: 14% or less, {210}: 14% or less, {21}
1｝: Etch that is 14% or less and satisfies the following expression
Alloy sheet for electronics with excellent workability. 0.2 ≦ {210} / ({331} + {211}) ≦ 1.0 where {331}: degree of integration of {331} crystal plane (%) {210}: degree of integration of {210} crystal plane ( %) {211}: degree of integration of {211} crystal plane (%)(4) Ni content is 27-32wt%, Co content is
Fe-Ni-Co-based alloy thin of more than 1 wt% and 20 wt% or less
Plate, {331}, {210} and
And the integration degree of each crystal plane of {211} is {331}: 14
% Or less, {210}: 14% or less, {211}: 14%
Etching workability that satisfies the following formula
Excellent electronic alloy sheet. 0.2 ≦ {210} / ({331} + {211}) ≦ 1.0 However, {331}: Degree of integration of {331} crystal plane (%) {210}: Degree of integration of {210} crystal plane (%) {211}: degree of integration of {211} crystal plane (%)

(5) Ni content of 34 to 38 wt%,
Fe-Ni-Cr alloy with Cr content of 3.0 wt% or less
It is a thin gold plate, {331}, {210} on the alloy plate surface
And the integration degree of each crystal plane of {211} is {331}:
14% or less, {210}: 14% or less, {211}: 1
An electronic alloy thin plate having an etching processability of 4% or less and satisfying the following expression. 0.2 ≦ {210} / ({331} + {211}) ≦ 1.0 where {331}: degree of integration of {331} crystal plane (%) {210}: degree of integration of {210} crystal plane ( %) {211}: degree of integration of {211} crystal plane (%)

[0010]

(6) The above (1), (2), (3) ,
The alloy thin sheet according to (4) or (5) , wherein the average crystal grain size in the thickness direction is 10 μm or less and excellent in etching workability.

[0012]

The details of the present invention will be described below, together with the reasons for its limitation. The alloy thin plate of the present invention is composed of a component composition containing Fe and Ni as main components, or a component composition containing Fe and Ni and Co or / and Cr as main components. The reasons for the limitation are as follows. First, the case of an alloy thin plate used as a shadow mask material will be described.

In order to prevent the occurrence of color misregistration, 30 to 100 required for Fe—Ni alloy thin plates for shadow masks
The upper limit of the average thermal expansion coefficient in the temperature range of 2.0 ° C. is 2.0
× (1/10 ⁶ ) / ° C. Coefficient of thermal expansion is Ni
Ni that satisfies the above condition of the average thermal expansion coefficient
The amount is 34-38 wt%. For this reason, Ni is 34 to 3
It is preferable that the content be in the range of 8 wt%. To obtain a lower average coefficient of thermal expansion, Ni should be 35 to 37 wt.
%, More preferably 35.5 to 36.5 wt%. Usually, Co is contained to some extent as an unavoidable impurity in the Fe—Ni alloy, and 1 wt.
%, The characteristics are hardly affected, and the Ni content may be in the above range. On the other hand, when Co is contained in an amount exceeding 1 wt% to 7 wt%, the range of the amount of Ni for satisfying the above condition of the average thermal expansion coefficient is 28 to 38 wt%. Therefore, when the content of Co is more than 1 wt% to 7 wt%, the content of Ni is preferably in the range of 28 to 38 wt%. Also,
By setting Co to 3 to 6 wt% and Ni to 30 to 33 wt%, excellent characteristics having a lower average thermal expansion coefficient can be obtained. On the other hand, if Co exceeds 7 wt%, the coefficient of thermal expansion deteriorates conversely, so the upper limit of Co is preferably set to 7 wt%.

Next, the case of the alloy thin plate used as the material for the IC lead frame will be described. The amount of Ni satisfying the condition of the average thermal expansion coefficient required for the Fe—Ni alloy thin plate for the IC lead frame is 38 to 52 wt. %. If the content of Ni is less than 38 wt% or more than 52 wt%, the average thermal expansion coefficient of the alloy becomes too large, so that the compatibility with semiconductor elements, glass, ceramics and the like cannot be maintained. Therefore, Ni is preferably in the range of 38 to 52% by weight. As described above, Co is contained to some extent as an unavoidable impurity in the Fe—Ni-based alloy, and 1 wt% of Co is contained.
In the following, the characteristics are hardly affected, and the Ni content may be in the above range.

On the other hand, in an alloy thin plate for an IC lead frame, by adding Co in a range of more than 1 wt% to 20 wt%, the consistency with a semiconductor element, glass, ceramics and the like can be further improved. If Co is 1 wt% or less or exceeds 20 wt%, the above effects cannot be obtained. Co
More than 1 wt% to 20 wt%, the range of the amount of Ni for satisfying the condition of the average thermal expansion coefficient as the material for the IC lead frame is 27 to 32 wt%. N
If i is less than 27% by weight or more than 32% by weight, the thermal expansion characteristics will be degraded. Therefore, the content of Co is more than 1 wt% to 2
When 0 wt% is contained, it is preferable that Ni is in the range of 27 to 32 wt%. Cr is an element that can improve mechanical properties, but is also an element that deteriorates thermal expansion characteristics. The upper limit of Cr for obtaining the thermal expansion characteristic intended in the present invention is 3.0 wt%, and therefore, Cr can be contained with 3.0 wt% as the upper limit.

With respect to elements other than the main component elements described above, C: 0.0050 wt% or less, Mn: 0. 50wt
%, Si: 0.20 wt% or less, N: 0.0050
wt% or less, O: 0.0050 wt% or less, B: 0.0
It is desirable to be 050 wt%.

Next, a description will be given of the degree of integration and the ratio of crystal planes on the alloy plate surface and the average crystal grain size in the thickness direction of the alloy plate, which are the most significant features of the present invention. We have:
# 33 on the surface of the alloy sheet having the above-mentioned composition
By controlling the degree of integration of each crystal plane of {1}, {210} and {211} and the ratio of the degree of integration of these crystal planes to a specific range, the etching factor can be effectively increased, and It has been found that the surface roughness (Ra) of the etched end face indicated by 5a can be reduced, and the brightness level of the shadow mask and the plating property after etching can be improved.

FIG. 1 shows {331}, {2} on the surface of the alloy plate.
Fe-Ni-based alloy sheets, Fe-Ni-Co-based alloy sheets, Fe-Ni-Cr-based alloy sheets, and Fe-Ni-C in which the degree of integration of the crystal planes of {10} and {211} are variously different
Photo-etching of an o-Cr alloy thin plate was performed, and the relationship between the light transmittance of the obtained flat mask (alloy thin plate for a shadow mask as perforated by etching) and the surface roughness (Ra) of the etched end face was shown. Things. Here, the light transmittance of the flat mask was determined by measuring the light transmittance of the flat mask and dividing the value by the light transmittance of a flat mask made of low carbon steel of the same dimensions. The surface roughness of the etched end face was measured by the method described in Examples described later.

The degree of integration of each crystal plane described above can be obtained by (111), (200),
(220), (311), (331), (420) and (422) can be obtained from the X-ray diffraction intensity of each diffraction surface. For example, the degree of integration of the {331} crystal plane is (33
1) The relative X-ray intensity ratio of the diffraction surface is (111), (20)
0), (220), (311), (331), (42)
It can be obtained by dividing by the sum of the relative X-ray intensity ratios of the diffraction planes of (0) and (422). Also, $ 21
The degree of integration of each crystal plane of {0} and {211} can be obtained in the same manner. Here, the relative X-ray diffraction intensity ratio is obtained by dividing the X-ray diffraction intensity measured on each diffraction surface by the theoretical X-ray intensity of the diffraction surface. For example, the relative X-ray diffraction intensity ratio of the (111) diffraction surface is obtained by dividing the X-ray diffraction intensity of the (111) diffraction surface by the theoretical X-ray diffraction intensity of the (111) diffraction surface. The degree of integration of each of the crystal planes {210} and {211} is azimuthally equal to these crystal planes (420), and the relative X-ray diffraction intensity ratio of the (422) diffraction plane is set to the above (111). To (422) by dividing by the sum of the relative X-ray diffraction intensity ratios of the seven diffraction planes.

According to FIG. 1, the degree of integration of each crystal plane of {331}, {210} and {211} is {331}: 14
% Or less, {210}: 14% or less, {211}: 14%
In the following cases, the surface roughness of the etched end face is Ra0.
The light transmittance of the flat mask becomes 90 μm or less, and the light transmittance of the flat mask becomes 1.0 or more, and it can be seen that brightness higher than that of the conventional low carbon steel flat mask can be obtained. In addition, the alloy sheet
Regarding the plating property after etching when applied to the material for C lead frame, the degree of integration of each of the above crystal planes is set at $ 3.
31: 14% or less, {210}: 14% or less, $ 21
It was also confirmed that when 1%: 14% or less, the surface roughness of the etched end face became Ra 0.90 μm or less, so that excellent solder plating property was obtained.

{331}, {210} and {211}
If any of the degrees of integration of the respective crystal planes deviates from the above range, the surface roughness of the etched end face exceeds Ra 0.9 μm, and the above characteristics cannot be obtained. When the etched end face is observed microscopically, fine pits (irregularities) are generated on the entire surface, and the surface roughness of the etched end face exceeds Ra 0.9 μm because such pits are generated. It is believed that there is. In addition, as for the relationship between the brightness of the flat mask and the surface roughness of the etched end face, the correlation with other roughness parameters was also examined, and the one showing the strongest correlation was the center line average roughness (Ra). . For the above reasons, according to the present invention, the conditions of {331}, {210} and {211} crystals are set as conditions for setting the brightness of the flat mask to an excellent level and improving the plating property after etching. The degree of integration of the surface is {331}: 14% or less,
0}: 14% or less, {211}: 14% or less.

Next, in order to effectively increase the etching factor, {331} and {210} on the surface of the alloy plate are required.
It is necessary to control the ratio of the degree of integration of each crystal plane of {211} and {211}. FIG. 2 shows the results of the # 33 on the alloy plate surface.
The degree of integration of each crystal plane of {1}, {210} and {211} is within the scope of the present invention, and the ratio of the degree of integration of these crystal planes: {210} / ({331} + {211}) varies. Different Fe-Ni-based alloy sheets, Fe-Ni-Co-based alloy sheets, Fe-Ni-Cr-based alloy sheets and Fe-Ni-C
Photo-etching the o-Cr alloy thin plate, the ratio of the degree of integration of the crystal plane: {210} / ({331} + {211})
And the relationship between the etching factor and the unevenness of the flat mask.

Here, in the present invention, the value of the etching factor having no practical problem is set to 1.8 or more. In addition,
The degree of integration of each of the crystal planes of {331}, {210} and {211} was obtained by the above-mentioned X-ray diffraction method, and the etching factor was obtained by the same method as described in Examples described later. In addition, the uneven quality was determined by visual observation. A without unevenness was evaluated as A, and a sample with severe unevenness and having a practical problem was evaluated as E. BD was ranked between A and E. , A to C have no practical problems.

According to FIG. 2, {210} / ({331}).
+ {211}), the value of the etching factor increases, and {210} / ({331} +
When the value of {211} is 0.2 or more, the etching factor becomes 1.8 or more. On the other hand, {210} / ({331}
(+ {211}) exceeds 1.0, the uneven quality deteriorates and there is a practical problem. For the above reasons, in the present invention, {210} / ($ 33) is a condition for obtaining good etching quality and a high etching factor aimed at by the present invention.
1｝ + {211}) is defined as 0.2 to 1.0.

The etching factor can be effectively increased by controlling the ratio of the degree of integration of a specific crystal plane on the surface of the alloy plate as described above. It is effective to regulate the average crystal grain size in the thickness direction. In the above-mentioned JP-A-62-243782 (prior art), the condition is that the crystal grain size is 8.0 or more, but the crystal grain size disclosed therein is the finest. The particle size is 10.0 in the particle size number, that is, [crystal grain size number] = 16.6439−6.6439 log ([average crystal grain size] /1.1
When calculated using the equation of 25), the crystal grain size is only 11 μm. On the other hand, in the alloy thin plate of the present invention in which the degree of integration of specific crystal planes and their ratio are regulated, the average crystal grain size in the sheet thickness direction is 10 μm or less (the crystal grain size number is 10 .3 or more), it was found that the etching factor could be further improved.

FIG. 3 shows that the degree of integration of each crystal plane of {331}, {210} and {211} is {331}: 14% or less, {210}: 14% or less, and {211}: 14% or less. In addition, the value of {210} / ({331} + {211}) and the average crystal grain size in the thickness direction are variously different from Fe-Ni.
Alloy thin plate, Fe-Ni-Co alloy thin plate, Fe-Ni
-Cr-based alloy thin plate and Fe-Ni-Co-Cr-based alloy thin plate were photo-etched, and the effect of {210} / ({331} + {211}) and average grain size on the etching factor was investigated. According to the figure, $ 21
Even if the value of 0 / ({331} + {211}) is the same, the etching factor increases as the average crystal grain size decreases. When the average crystal grain size exceeds 10 μm, the etching factor is less than 1.8 at {210} / ({331} + {211}): 0.2, whereas
If the average crystal grain size is 10 μm or less, {210} /
({331} + {211}): 1.8 even at 0.2
Is obtained. For the above reasons, in order to further increase the etching factor, it is preferable that the average crystal grain size in the thickness direction of the alloy plate be 10 μm or less. FIG. 4 shows that {210} / [{33
1 {+ {211}]: A relationship between the average crystal grain size in the thickness direction of the alloy plate and the etching factor when the constant is set to 0.25.

{331}, {210} specified by the present invention
And {211} to obtain the degree of integration of each crystal plane,
In the manufacturing process of the alloy sheet, it is necessary to adopt manufacturing conditions that do not form these crystal planes as much as possible.For example, the alloy sheet of the present invention is hot rolled by hot rolling a slab or a continuously cast slab. In the case of manufacturing a sheet, or a thin cast sheet obtained by directly casting an alloy or a hot-rolled sheet obtained by hot-rolling this as a material, performing hot-rolled sheet annealing after hot rolling, And the annealing temperature is 910-990 ° C.
It is effective to control the temperature to an appropriate value within the range described above in order to suppress the formation of each crystal plane.

Also, {331}, {2} defined by the present invention
In order to obtain the ratio of the degree of integration of each of the crystal planes of {10} and {211}, {331}, {2}
According to the degree of integration of each crystal plane of {10} and {211},
Optimum cold rolling rate, recrystallization annealing conditions (annealing temperature, time, heating rate) and finish cold rolling conditions in a series of steps of cold rolling after hot-rolled sheet annealing-recrystallization annealing-finish cold rolling Is effective. In order to obtain the degree of integration of crystal planes specified by the present invention, it is not preferable to subject the slab after slab rolling or the continuously cast slab to a uniform heat treatment in the manufacturing process of the alloy sheet. For example, when the homogenizing heat treatment is performed at a temperature of 1200 ° C. or more and 10 hours or more, the present invention defines at least one of the degree of integration of each of {331}, {210} and {211} crystal planes. Therefore, such processing must be avoided because the condition is not satisfied. The degree of integration of each crystal plane defined by the present invention can be obtained by adopting a rapid solidification method, controlling texture by controlling recrystallization in hot working, and the like, in addition to the above-described method.

[0029]

EXAMPLES A to A shown in Tables 1 and 3 by ladle refining
An alloy lump having chemical components of C, J and L was obtained. After treating these alloy ingots, they were subjected to bulk rolling, surface flaw removal, and hot rolling (heating conditions: 1100 ° C. × 3 hr) to obtain hot rolled sheets. For alloys having the chemical components of D to I and K shown in Tables 1 to 3, after melting, refining outside the furnace and casting directly on a thin cast plate, and subsequently, at 1350 to 1000 ° C., a rolling reduction of 30
% And hot-rolled at 750 ° C. to obtain a hot-rolled sheet.
After annealing each hot-rolled sheet at 910 to 990 ° C,
Cold rolling, recrystallization annealing and finish cold rolling were sequentially performed, and the material No. having the degree of crystal plane integration and the average crystal grain size in the thickness direction as shown in Tables 4 and 5 was obtained. 1 to No.
31 alloy thin plates were obtained. In addition, {331}, $ 21
The degree of integration of each crystal plane of {0} and {211} was determined by the X-ray diffraction method described above.

A resist pattern was provided on the surface of each alloy thin plate obtained as described above, and the resist opening diameter was 135 μm.
The etching factor at m was measured. The measurement of the etching factor was performed by measuring the above sample at 45 Baume, a ferric chloride solution, a liquid temperature of 40 ° C., and a spray pressure of 2.5 kg / c.
After etching at m ^{2 for} 50 seconds, the dimensions shown in FIG. 5 were measured and calculated. In addition, material No. 1 to No. 24, N
o. 29-No. The thin alloy plate of No. 31 was processed into a flat mask by photoetching, and its light transmission was measured. This value was divided by the light transmission of a low carbon steel flat mask of the same dimensions, and this was used as the light transmission of the flat mask. did. The surface roughness of the etching end face of each of these flat masks was measured by a non-contact type laser roughness meter. The cutoff value was 0.02 mm, and the roughness curve was extracted by removing the tapered portion of the end face as a waviness component, and the center line average roughness (Ra) was determined from this curve.
The uneven quality of the flat mask was determined by visual observation, and was determined based on the same standard as in FIG. In addition, material No. 25-No. For each of the alloy thin plates of No. 28, the surface roughness of the etched end face after photoetching was measured by the same method as described above. Further, these samples were subjected to solder plating, and the quality of solder plating was evaluated.

As apparent from the results shown in Tables 3 and 4, the degree of integration of each crystal plane of {331}, {210} and {211} and {210} /
({331} + {211}). 6
-No. 27, no. 29-No. Reference numeral 31 denotes a flat mask having a surface roughness Ra of 0.90 μm or less, a light transmittance of a flat mask of 1.0 or more when used as a shadow mask material, and a brightness higher than that of a conventional low carbon steel flat mask. , And also has excellent solder plating properties when used as an IC lead frame material. The etching factors of these materials are all 1.8 or more. 6-No. 2
The uneven quality of the flat mask according to No. 4 is also at a level where there is no practical problem.

Further, the material No. 6, no. 9-No. 1
No. 4 is {210} / ({331} + $ 21)
1) is 0.25 to 0.26, 9 ~
No. Each alloy thin plate of No. 14 has an average crystal grain size of 1 in the thickness direction.
0 μm or less, the average crystal grain size in the thickness direction is 1
No. 1.1 μm. As compared with No. 6, the etching factor shows a higher value, which indicates that the etching property is more excellent. Further, the material No. 9-No. Among the alloy thin plates of No. 14, the material having a smaller average crystal grain size in the thickness direction has a higher etching factor, and in order to increase the etching factor, it is effective to reduce the average crystal grain size in the thickness direction. You can see that.

In contrast to the above examples of the present invention, the materials No. No. 1 is a comparative example in which the degree of integration of the {331} crystal plane exceeded the upper limit specified by the present invention. No. 2 is a comparative example in which the degree of integration of the {210} crystal plane exceeded the upper limit specified by the present invention; No. 3 is a comparative example in which the degree of integration of the {211} crystal plane exceeded the upper limit specified by the present invention. In each of these comparative examples, the surface roughness of the etched end face exceeded Ra 0.90 μm, The transmittance is less than 1.0, and the brightness of the mask is inferior to that of the example of the present invention. Material No. No. 4 is a comparative example in which the value of {210} / ({331} + {211}) exceeded the upper limit specified by the present invention, and the unevenness of the flat mask was inferior to that of the present invention. In addition, material No. 5 is {210} / ({331} + {211})
Is a comparative example in which the value is less than the lower limit specified by the present invention, and the etching factor is less than 1.80, and the etching property intended by the present invention is not obtained. The material N
o. Reference numeral 28 is a comparative example in which the degree of integration of the {210} crystal plane and the {211} crystal plane exceeded the upper limit specified by the present invention. The surface roughness of the etched end face exceeded Ra 0.90 μm, and the Poor plating properties.

As is apparent from the above embodiment, by setting the degree of integration of each crystal plane of {331}, {210} and {211} on the surface of the alloy plate within the range defined by the present invention, the etching end face can be obtained. The surface roughness Ra is optimized, whereby the light transmittance of the flat mask can be set to an excellent level, and the solder plating property can also be made excellent. Furthermore, the ratio of the degree of integration of each crystal plane: {210} /
By making ({331} + {211}) within the range specified by the present invention, the etching factor can be effectively increased and the quality of the unevenness of the flat mask can be improved. The etching factor can be further increased by reducing the average crystal grain size in the thickness direction of the alloy plate.

[0035]

[Table 1]

[0036]

[Table 2]

[0037]

[Table 3]

[0038]

[Table 4]

[0039]

[Table 5]

[0040]

As described above, the electronic alloy thin plate of the present invention has a high etching factor, so that it is possible to form holes with high precision and uniform etching. It also shows an excellent level, and also has excellent mask quality. Also, it has excellent solder plating properties when used as an IC lead frame material.

[Brief description of the drawings]

FIG. 1 shows the relationship between the light transmittance of a flat mask and the surface roughness Ra of an etched end face of alloy thin plates having different degrees of integration of {331}, {210}, and {211} crystal planes on the alloy plate surface. Graph showing

FIG. 2 shows the ratio of the degree of integration of each crystal plane of {331}, {210} and {211} on the surface of the alloy plate: {210} /
Graph showing the relationship between ({331} + {211}) and the etching factor and the unevenness of the flat mask.

FIG. 3 shows the ratio between the average grain size in the thickness direction of the alloy plate and the degree of integration of each crystal plane of {331}, {210} and {211} on the surface of the alloy plate: {210} / ({331} ｝ + ｛2
Graph showing the effect of 11 影響) on the etching factor

FIG. 4 {210} / [{331} + {211}]:
A graph showing the relationship between the average crystal grain size in the thickness direction of the alloy plate and the etching factor when the ratio is set to 0.25.

FIG. 5 is an explanatory view showing a definition of an etching factor and an etching end face.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI H01L 23/48 H01L 23/48 V (72) Inventor Yoshiaki Shimizu 1-2-1, Marunouchi, Chiyoda-ku, Tokyo Nippon Kokan Co., Ltd. (56) References JP-A-6-41688 (JP, A) JP-A-3-97831 (JP, A) JP-A-62-174353 (JP, A) JP-A-62-149851 (JP, A) Kaihei 4-160112 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) C22C 38/00-38/60

Claims (6)

(57) [Claims] 1. A ferrous alloy having a Ni content of 34 to 38 wt%.
Ni-based alloy thin plate, {331} on the alloy plate surface,
The degree of integration of each crystal plane of {210} and {211} is
{331}: 14% or less, {210}: 14% or less,
{211}: An electronic alloy thin plate excellent in etching workability that is 14% or less and satisfies the following expression. 0.2 ≦ {210} / ({331} + {211}) ≦ 1.0 where {331}: degree of integration of {331} crystal plane (%) {210}: degree of integration of {210} crystal plane ( %) {211}: degree of integration of {211} crystal plane (%) 2. An Fe-containing alloy having a Ni content of 38 to 52 wt%.
Ni-based alloy thin plate, {331} on the alloy plate surface,
The degree of integration of each crystal plane of {210} and {211} is
{331}: 14% or less, {210}: 14% or less,
{211}: not more than 14% and satisfies the following expression
Alloy sheet for electronics with excellent etching processability. 0.2 ≦ {210} / ({331} + {211}) ≦ 1.0 However, {331}: Degree of integration of {331} crystal plane (%) {210}: Degree of integration of {210} crystal plane (%) {211}: degree of integration of {211} crystal plane (%) 3. Ni content of 28 to 38 wt%, Co content
Fe-Ni-Co based alloy having a content of more than 1 wt% and 7 wt% or less
It is a thin gold plate, {331}, {210} on the alloy plate surface
And the integration degree of each crystal plane of {211} is {331}:
14% or less, {210}: 14% or less, {211}: 1
An electronic alloy thin plate having an etching processability of 4% or less and satisfying the following expression. 0.2 ≦ {210} / ({331} + {211}) ≦ 1.0 where {331}: degree of integration of {331} crystal plane (%) {210}: degree of integration of {210} crystal plane ( %) {211}: degree of integration of {211} crystal plane (%) 4. Ni content of 27-32 wt%, Co content
Fe-Ni-Co-based material having a content of more than 1 wt% and not more than 20 wt%
Alloy thin plate, {331}, {21} on the surface of the alloy plate
The degree of integration of each crystal plane of {0} and {211} is {33}
1｝: 14% or less, ｛ 210: 14% or less, $ 21
1｝: Etch that is 14% or less and satisfies the following expression
Alloy sheet for electronics with excellent workability. 0.2 ≦ {210} / ({331} + {211}) ≦ 1.0 However, {331}: Degree of integration of {331} crystal plane (%) {210}: Degree of integration of {210} crystal plane (%) {211}: degree of integration of {211} crystal plane (%) 5. Ni content of 34 to 38 wt%, Cr content
Fe-Ni-Cr-based alloy sheet having a weight of 3.0 wt% or less
And the degree of integration of each crystal plane of {331}, {210} and {211} on the alloy plate surface is {331}: 14%
Hereafter, {210}: 14% or less, {211}: 14% or less, and an electronic alloy thin plate excellent in etching workability satisfying the following expression. 0.2 ≦ {210} / ({331} + {211}) ≦ 1.0 where {331}: degree of integration of {331} crystal plane (%) {210}: degree of integration of {210} crystal plane ( %) {211}: degree of integration of {211} crystal plane (%) 6. The electronic alloy sheet average grain size in the thickness direction with excellent etching workability according to claim 1, 2, 3, 4 or 5 is 10μm or less.