JPS5930793A - 結晶成長方法及び結晶引上げ装置 - Google Patents
結晶成長方法及び結晶引上げ装置Info
- Publication number
- JPS5930793A JPS5930793A JP57139029A JP13902982A JPS5930793A JP S5930793 A JPS5930793 A JP S5930793A JP 57139029 A JP57139029 A JP 57139029A JP 13902982 A JP13902982 A JP 13902982A JP S5930793 A JPS5930793 A JP S5930793A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- melt
- gaas
- inner tube
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57139029A JPS5930793A (ja) | 1982-08-10 | 1982-08-10 | 結晶成長方法及び結晶引上げ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57139029A JPS5930793A (ja) | 1982-08-10 | 1982-08-10 | 結晶成長方法及び結晶引上げ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5930793A true JPS5930793A (ja) | 1984-02-18 |
JPH0366279B2 JPH0366279B2 (enrdf_load_stackoverflow) | 1991-10-16 |
Family
ID=15235798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57139029A Granted JPS5930793A (ja) | 1982-08-10 | 1982-08-10 | 結晶成長方法及び結晶引上げ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5930793A (enrdf_load_stackoverflow) |
-
1982
- 1982-08-10 JP JP57139029A patent/JPS5930793A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0366279B2 (enrdf_load_stackoverflow) | 1991-10-16 |