JPS5928063B2 - Manufacturing method of solid-state image sensor - Google Patents
Manufacturing method of solid-state image sensorInfo
- Publication number
- JPS5928063B2 JPS5928063B2 JP54123335A JP12333579A JPS5928063B2 JP S5928063 B2 JPS5928063 B2 JP S5928063B2 JP 54123335 A JP54123335 A JP 54123335A JP 12333579 A JP12333579 A JP 12333579A JP S5928063 B2 JPS5928063 B2 JP S5928063B2
- Authority
- JP
- Japan
- Prior art keywords
- solid
- manufacturing
- picture element
- image sensor
- state image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 229920005989 resin Polymers 0.000 claims description 24
- 239000011347 resin Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 14
- 238000007740 vapor deposition Methods 0.000 description 8
- 239000000428 dust Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Description
【発明の詳細な説明】
この発明は光導電膜を有する高感度高密度の固体撮像素
子の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a high-sensitivity, high-density solid-state imaging device having a photoconductive film.
従来のこの種の固体撮像素子は、第１図および第２図に
示すように、ｐ形下地基板１上の中央部に光学像を感知
するホトダイオードおよび光学信号を転送する電荷転送
素子等よりなる絵素部２（具体的構造は後述する）を設
け、この絵素部２の周囲に絵素部２を駆動するシフトレ
ジスタあるいはＣＣＤ等の駆動回路部３を設け、駆動回
路部３の上部に絶縁膜４を設けている。この絶縁膜４の
上部には、駆動回路部３の端子と絶縁膜４の開口を介し
て接続されるとともに外部配線用パッド部５に及ぶ導体
配線部６と光導電膜接続用電極Ｔとが設けられている。
さらにまた、絵素部２上には、光導電膜（たとえば、Ｚ
ｎＳｅ−Ｚｎｌ−ｘＣｄｘＴｅ・アモルファスシリコン
等）８および透明電極９が積層形成され、さらに接着剤
層１０を介してカラーフィルタ１１が貼着されている。
つぎに、絵素部２の構成について詳しく説明する。As shown in FIGS. 1 and 2, a conventional solid-state image sensor of this kind consists of a photodiode that senses an optical image, a charge transfer element that transfers an optical signal, etc. in the center of a p-type base substrate 1. A picture element section 2 (the specific structure will be described later) is provided, a drive circuit section 3 such as a shift register or CCD for driving the picture element section 2 is provided around this picture element section 2, and a An insulating film 4 is provided. On the upper part of this insulating film 4, a conductor wiring part 6 and a photoconductive film connecting electrode T are connected to the terminals of the drive circuit part 3 through the opening of the insulating film 4 and extend to the external wiring pad part 5. It is provided.
Furthermore, a photoconductive film (for example, Z
nSe-Znl-xCdxTe, amorphous silicon, etc.) 8 and a transparent electrode 9 are laminated, and a color filter 11 is further adhered via an adhesive layer 10.
Next, the configuration of the picture element section 2 will be explained in detail.
第３図および第４図において、ｎ＋拡散領域１２はｐ形
下地基板１とでホトダイオードを形成する。ｎ＋拡散領
域１３は、ＢＢＤを構成する拡散領域であり、第１ゲー
ト電極１４に電圧を加えることにより、ｎ＋拡散領域１
２からチャージ電荷を転送する。１５および１６はそれ
ぞれ絶縁物である。In FIGS. 3 and 4, n+ diffusion region 12 and p-type base substrate 1 form a photodiode. The n+ diffusion region 13 is a diffusion region that constitutes the BBD, and by applying a voltage to the first gate electrode 14, the n+ diffusion region 1
Transfer the charge from 2. 15 and 16 are insulators, respectively.
電極ＩＴは、Ｍｏで形成されてｎ＋拡散領域１２と電気
的に接続され、光導電膜８の電極を兼ねている。第２ゲ
ート電極１８はＢＢＤゲートを構成している。つぎに、
この固体撮像素子の光情報読込動作について第５図を参
照して説明する。The electrode IT is made of Mo, is electrically connected to the n+ diffusion region 12, and also serves as an electrode of the photoconductive film 8. The second gate electrode 18 constitutes a BBD gate. next,
The optical information reading operation of this solid-state image sensor will be explained with reference to FIG.
第５図Ａは駆動パルスパターン、第５図Ｂはｎ＋拡散領
域１２における電位変化を示している。時間ｔ１におい
て、第１ゲート電極１４に電圧ＶＣＨなる読込パルスＰ
，を印加すると、ｎ＋拡散領域１２における電位は第５
図Ｂに示したように（ＶＯＨ−Ｔ）にチヤージされる。
ここで、Ｔはｎ＋拡散領域１２，１３および第１ゲート
電極１４より構成されるＦＥＴのしきい値電圧である。
今、矢印Ａで示すような入射光があると、光導電膜８に
おいて電子正孔対が生成され、それぞれ電極１７および
透明電極９に到達し、ｎ＋拡散領域１２の電位が低下す
る。FIG. 5A shows a driving pulse pattern, and FIG. 5B shows potential changes in the n+ diffusion region 12. At time t1, a read pulse P having a voltage VCH is applied to the first gate electrode 14.
, the potential in the n+ diffusion region 12 becomes the fifth
As shown in Figure B, it is charged to (VOH-T).
Here, T is the threshold voltage of the FET composed of the n+ diffusion regions 12 and 13 and the first gate electrode 14.
Now, when there is incident light as shown by arrow A, electron-hole pairs are generated in the photoconductive film 8, which reach the electrode 17 and the transparent electrode 9, respectively, and the potential of the n+ diffusion region 12 decreases.
しかも、この電位の低下は入射光量に比例（Ｑ１は通常
光、Ｑ２は非常に強い光の場合を示す）し、１フイール
ド期間ＴＦ蓄積されるので、電圧Ｖｓまで低下する。さ
らに、時間Ｔ２において、第１ゲート電極１４に電圧Ｖ
ＣＨを印加すると、その下のｐ形下地基板１の表面電位
が上昇し、その結果、ｎ＋拡散領域１２からｎ＋拡散領
域１３に電子の移動が生じる。それに続き、ｎ＋拡散領
域１２の電位が再び上昇し、（ＶＣＨ−ＶＴ）となる。
したがつて、ｎ＋拡散領域１３に移動した電荷の総量は
入射光に対応することとなる。このようにしてｎ＋拡散
領域１３に読み込まれた光情報は、第５図Ａに示す電圧
Ｖφなる転送パルスＰ２を第２ゲート電極１８に印加す
ることにより、ＢＢＤ電荷転送の形で光情報が第３図の
紙面の土下方向（矢印ｚで示す）へ転送される。すなわ
ち、ホトダイオードで光電変換された信号を２相クロツ
ク信号で出力段に送り出すことができる。このような固
体撮像素子の製造プロセスにおいて、導体配線部６およ
び光導電膜接続用電極７を形成した後絵素部２上面にの
み光導電膜８および透明電極９を形成する方法として、
金属製のカバーマスクを用いて所定部へのみ蒸着すると
いう方法が用いられていた（以下、マスク蒸着方式とい
う）。このマスク蒸着方式が用いられている理由はつぎ
のとおりである。Moreover, this potential drop is proportional to the amount of incident light (Q1 indicates normal light, Q2 indicates very strong light), and TF is accumulated for one field period, so that the potential decreases to the voltage Vs. Furthermore, at time T2, the voltage V is applied to the first gate electrode 14.
When CH is applied, the surface potential of the underlying p-type base substrate 1 increases, and as a result, electrons move from the n+ diffusion region 12 to the n+ diffusion region 13. Subsequently, the potential of the n+ diffusion region 12 rises again to (VCH-VT).
Therefore, the total amount of charge transferred to the n+ diffusion region 13 corresponds to the incident light. The optical information read into the n+ diffusion region 13 in this way is transferred in the form of BBD charge transfer by applying a transfer pulse P2 having a voltage Vφ shown in FIG. 5A to the second gate electrode 18. It is transferred to the underground direction (indicated by arrow z) on the page of Figure 3. That is, the signal photoelectrically converted by the photodiode can be sent to the output stage as a two-phase clock signal. In the manufacturing process of such a solid-state image sensor, a method of forming a photoconductive film 8 and a transparent electrode 9 only on the upper surface of the picture element part 2 after forming the conductor wiring part 6 and the photoconductive film connection electrode 7 is as follows.
A method has been used in which vapor deposition is performed only on predetermined areas using a metal cover mask (hereinafter referred to as mask vapor deposition method). The reason why this mask vapor deposition method is used is as follows.
すなわち、一般に、光導電膜８は、溶剤や水分で感度が
劣化しやすく、従来より半導体装置の製造に用いられて
いるレジスト（たとえば、ＫＴＦＲ（商品名）、ＡＺｌ
３５ＯＪ（商品名）等）によるホトリソ法を用いれば、
レジスト除去工程で使用されるレジスト除去液、たとえ
ばＪ−１００（商品名）または発煙硝酸等で特性が大幅
に劣化してしまう。したがつて、従来は、マスク蒸着方
式によつてのみ製造が可能であつたが、このマスク蒸着
方式では、基板上で金属マスクを位置調整する際、ｐ形
下地基板１に傷を付けたり、またごみの付着等による欠
陥が多数生じ、完成された固体撮像素子を動作させた場
合、多数の線傷や点傷となつた。さらにまた、一般に蒸
着形成された光導電膜８および透明電極９は、強度が非
常に弱いので完成されたウエハを切断する際に付着する
ごみを洗浄等により取り除くのが難しかつた。そして、
残留したごみは、カラーフイルタ１１を接着する際に生
じる欠陥の大きな原因でもあつた（通常、カラーフイル
タ１１と透明電極９の間のギヤツプは５〜６ミクロン程
度に接着されねばならないので、カラーフイルタ１１に
よりごみが圧着され、固体撮像素子に欠陥が生じる）。
このように従来の製造方法では、製造時に欠陥が生じ、
製造時の歩留りが悪かつた。That is, in general, the sensitivity of the photoconductive film 8 is easily deteriorated by solvents and moisture, and resists conventionally used in the manufacture of semiconductor devices (for example, KTFR (trade name), AZI
35OJ (trade name) etc.),
The resist removal liquid used in the resist removal process, such as J-100 (trade name) or fuming nitric acid, significantly deteriorates the characteristics. Therefore, in the past, manufacturing was possible only by the mask vapor deposition method, but with this mask vapor deposition method, when adjusting the position of the metal mask on the substrate, the p-type base substrate 1 may be scratched, In addition, many defects were caused by adhesion of dust, etc., and when the completed solid-state image sensor was operated, many line scratches and dots appeared. Furthermore, since the photoconductive film 8 and the transparent electrode 9 that are generally formed by vapor deposition have very low strength, it is difficult to remove dust that adheres when cutting a completed wafer by cleaning or the like. and,
The remaining dust was also a major cause of defects that occurred when bonding the color filter 11 (normally, the gap between the color filter 11 and the transparent electrode 9 must be bonded to about 5 to 6 microns, so the color filter 11, the dust is compressed and defects occur in the solid-state image sensor).
In this way, with conventional manufacturing methods, defects occur during manufacturing,
Yield during manufacturing was poor.
したがつて、この発明の目的は、歩留りを大幅に向上す
ることができる固体撮像素子の製造方法を提供すること
である。Therefore, an object of the present invention is to provide a method for manufacturing a solid-state image sensor that can significantly improve yield.
この発明の一実施例を第６図ないし第８図に基づいて説
明する。An embodiment of the present invention will be explained based on FIGS. 6 to 8.
まず、第６図に示すように、シリコンのｐ形下地基板１
９上に、通常のＭＯＳプロセスを用いて光学像を感知す
るホトダイオードと転送用ＢＢＤ素子よりなる絵素部２
０およびＭＯＳトランジスタとＣＣＤ素子よりなる１駆
動回路部２１を形成した後、絶縁膜２２を介して導体配
線部２３、光導電膜接続用電極２４およびホトダイオー
ドと後に形成する光導電膜とを接続する電極２５を形成
する。First, as shown in FIG. 6, a silicon p-type base substrate 1
9, there is a picture element section 2 consisting of a photodiode for sensing an optical image and a transfer BBD element using a normal MOS process.
After forming the drive circuit section 21 consisting of 0 and MOS transistors and CCD elements, the conductor wiring section 23, the photoconductive film connecting electrode 24, the photodiode, and the photoconductive film to be formed later are connected via the insulating film 22. Electrodes 25 are formed.
つぎに、光導電膜２６（たとえば、ＺｎＳｅＺｎｌ−Ｘ
ＣｄｘＴｅ等）および透明電極２７（たとえばＳｎをド
ープしたＩｎ２Ｏ３）を順次全面に蒸着する。Next, a photoconductive film 26 (for example, ZnSeZnl-X
CdxTe, etc.) and a transparent electrode 27 (for example, In2O3 doped with Sn) are sequentially deposited over the entire surface.
その後、第７図に示すように、透明光硬化型樹脂を全面
塗布し（たとえば、商品名サマーズＵＶ７４、ノーラン
ドＮＯＡ−６１等をスピンナーを用いて１〜２μｍの厚
みで塗布する）、所定のパターンを持つホトマスクを用
いて光照射を行い、絵素部２０の上面にのみ硬化樹脂膜
パターン２８を残す。Thereafter, as shown in FIG. 7, a transparent photocurable resin is applied to the entire surface (for example, a product such as Summers UV74 or Norland NOA-61 is applied to a thickness of 1 to 2 μm using a spinner), and a predetermined pattern is applied. Light irradiation is performed using a photomask with a mask, leaving the cured resin film pattern 28 only on the upper surface of the picture element section 20.
そして、硬化樹脂膜パターン２８をエツチングマスクに
用いて光導電膜２６および透明電極２７の不要部をエツ
チング除去する。この場合、光導電膜２６がＺｎＳｅ−
Ｚｎｌ−ＸＣｄｘＴｅであれば、１０規定硝酸で２〜３
分で除去可能であるので、硬化樹脂膜パターン２８に何
ら悪影響を及ぼさない。さらに、硬化樹脂膜パターン２
８を除去せずに保護膜として用いてｐ形下地基板１９を
所定の大きさに切断し洗浄する。Then, using the cured resin film pattern 28 as an etching mask, unnecessary portions of the photoconductive film 26 and the transparent electrode 27 are removed by etching. In this case, the photoconductive film 26 is made of ZnSe-
For Znl-XCdxTe, 2 to 3
Since it can be removed in minutes, it does not have any adverse effect on the cured resin film pattern 28. Furthermore, cured resin film pattern 2
The p-type base substrate 19 is cut into a predetermined size using the p-type base substrate 19, which is used as a protective film without removing it, and is cleaned.
最後に、第８図に示すように、透明接着剤２９を用いて
カラーフイルタ３０を硬化樹脂膜パターン２８上に接着
し、外部リードとパツド部とのワイヤボンデイングを行
つて固体撮像素子を完成する。Finally, as shown in FIG. 8, the color filter 30 is adhered onto the cured resin film pattern 28 using a transparent adhesive 29, and wire bonding is performed between the external leads and the pad portion to complete the solid-state imaging device. .
ここで、透明光硬化型樹脂および透明接着剤２９として
ともにＵ硬化型接着剤を用いれば、透明電極２７とカラ
ーフイルタ３０間の２層の樹脂が同一屈折率の樹脂とな
るので、光学特性が良くなり、また、樹脂間の接着性も
良いので都合が良い。Here, if U-curing adhesives are used as both the transparent light-curing resin and the transparent adhesive 29, the two layers of resin between the transparent electrode 27 and the color filter 30 will have the same refractive index, so the optical properties will be improved. This is advantageous because the adhesiveness between the resins is also good.
さらに、接着時の所要時間も大幅に短縮できる。なお、
従来のカラーフイルタは３００〜４００ｎｍの波長域を
１０（Ｆｆ）程度通過させるので、通常のＵ硬化（高圧
水銀灯の３６５ｎｍの光による）が利用できる。Furthermore, the time required for adhesion can be significantly reduced. In addition,
Conventional color filters allow about 10 (Ff) to pass through the wavelength range of 300 to 400 nm, so normal U curing (using 365 nm light from a high-pressure mercury lamp) can be used.
このように、この実施例の製造方法によれば、光導電膜
２６および透明電極２７の蒸着にマスク蒸着法を用いて
いないので、従来に比べ素子に傷を生じたり、ごみが付
着する確率が非常に少くなる。As described above, according to the manufacturing method of this embodiment, since the mask vapor deposition method is not used for vapor deposition of the photoconductive film 26 and the transparent electrode 27, the probability of causing scratches on the device or adhesion of dust to the device is reduced compared to the conventional method. Very little.
しかも、エツチングマスクに用いた透明光硬化型樹脂を
除去しないで、ｐ形下地基板１９の切断時の保護マスク
としても用いているので、水分が浸透することなく切断
後のごみの水洗除去も容易に行える。また、この透明光
硬化型樹脂は、フイルタ接着時にも残してあるので、接
着時に生じる欠陥を大幅に減少できる。したがつて、高
感度高密度の固体撮像素子を歩留りよく製造することが
可能である。さらにまた、透明光硬化型樹脂および透明
接着剤２９の双方にＵＶ硬化型接着剤を用いれば接着樹
脂層で界面を生じず光学特性が改善され、しかも硬化時
間を大幅に短縮できて製造能率が高くなる。以上のよう
に、この発明の固体撮像素子の製造方法は、光導電膜お
よび透明電極蒸着を金属マスクを用いることなく全面に
行うことにより、位置調整時に生じる傷およびごみの付
着を防ぎ、しかも、所定の領域に光導電膜および透明電
極を残すためのエツチングマスクとして透明光硬化型樹
脂による硬化樹脂膜パターンを用い、この硬化樹脂膜パ
ターンを除去せずに、下地基板切断後の洗浄およびカラ
ーフイルタの接着を行つているため、洗浄時およびフイ
ルタ接着時における光導電膜および透明電極の保護を行
うことができ、カラー化固体撮像素子の無欠陥製造の歩
留りを大幅に向上させることができるという効果がある
。Moreover, since the transparent photocurable resin used for the etching mask is not removed and is also used as a protective mask when cutting the p-type base substrate 19, moisture does not penetrate and dirt can be easily removed by washing with water after cutting. can be done. Moreover, since this transparent photocurable resin remains even when the filter is bonded, defects that occur during bonding can be significantly reduced. Therefore, it is possible to manufacture a high-sensitivity, high-density solid-state imaging device with a high yield. Furthermore, if a UV-curable adhesive is used for both the transparent light-curable resin and the transparent adhesive 29, the optical properties will be improved without creating an interface in the adhesive resin layer, and the curing time can be significantly shortened, increasing manufacturing efficiency. It gets expensive. As described above, the method for manufacturing a solid-state image sensor of the present invention prevents scratches and dust from attaching during position adjustment by depositing a photoconductive film and a transparent electrode on the entire surface without using a metal mask. A cured resin film pattern made of transparent photocurable resin is used as an etching mask to leave the photoconductive film and transparent electrode in predetermined areas, and cleaning and color filtering after cutting the base substrate are performed without removing the cured resin film pattern. Because of this, the photoconductive film and transparent electrode can be protected during cleaning and filter bonding, and the yield of defect-free manufacturing of color solid-state image sensors can be greatly improved. There is.
第１図は従来の固体撮像素子の平面図、第２図はその−
線断面図、第３図は同じくその要部平面図、第４図はそ
の−線断面図、第５図は同じくその動作説明のための波
形図、第６図ないし第８図はそれぞれこの発明の一実施
例を説明するための断面図である。
１９・・・・・・ｐ形下地基板、２０・・・・・・絵素
部、２１・・・・・・駆動部、２３・・・・・・導体配
線部、２６・・・・・・光導電膜、２７・・・・・・透
明電極、２８・・・・・・硬化樹脂膜パターン。Figure 1 is a plan view of a conventional solid-state image sensor, and Figure 2 is its -
3 is a plan view of the main part thereof, FIG. 4 is a sectional view along the line 4, FIG. 5 is a waveform diagram for explaining the operation, and FIGS. 6 to 8 respectively show the present invention. FIG. 2 is a sectional view for explaining one embodiment of the invention. 19...P-type base substrate, 20...Picture element section, 21...Drive section, 23...Conductor wiring section, 26... - Photoconductive film, 27...transparent electrode, 28...cured resin film pattern.
Claims (1)
像を感知転送する絵素部とこの絵素部を駆動する駆動回
路部とを形成する工程と、前記絵素部および駆動回路部
を形成した下地基板の基板面の全面に前記絵素部の光感
知部分に接続される光導電膜を形成する工程と、この光
導電膜の全面に透明電極を形成する工程と、この透明電
極の全面に光硬化型樹脂を塗布する工程と、この光硬化
型樹脂を所定のパターンマスクを用いて露光現像し前記
光硬化型樹脂による硬化樹脂膜パターンを前記絵素部の
表面に形成する工程と、この硬化樹脂膜パターンをマス
クにして前記透明電極および前記光導電膜を選択エッチ
ングする工程と、前記硬化樹脂膜パターンを除去せずに
さらに接着剤を用いて前記硬化樹脂膜パターン上にカラ
ーフィルタを接着する工程とを含む固体撮像素子の製造
方法。 ２ 前記光硬化型樹脂と前記接着剤を同材質としている
特許請求の範囲第１項記載の固体撮像素子の製造方法。[Scope of Claims] 1. A step of preparing a base substrate, a step of forming on the base substrate a picture element section for sensing and transferring an optical image, and a drive circuit section for driving this picture element section, A step of forming a photoconductive film connected to the photosensitive portion of the picture element portion on the entire substrate surface of the base substrate on which the portion and the driving circuit portion are formed, and a step of forming a transparent electrode on the entire surface of this photoconductive film. a step of applying a photocurable resin to the entire surface of the transparent electrode; and a step of exposing and developing the photocurable resin using a predetermined pattern mask to form a cured resin film pattern of the photocurable resin on the picture element area. a step of selectively etching the transparent electrode and the photoconductive film using the cured resin film pattern as a mask; and a step of etching the cured resin film pattern using an adhesive without removing the cured resin film pattern. A method for manufacturing a solid-state image sensor, including the step of bonding a color filter onto a film pattern. 2. The method of manufacturing a solid-state image sensor according to claim 1, wherein the photocurable resin and the adhesive are made of the same material.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54123335A JPS5928063B2 (en) | 1979-09-25 | 1979-09-25 | Manufacturing method of solid-state image sensor |
| US06/188,580 US4345021A (en) | 1979-09-25 | 1980-09-18 | Solid-state image pickup element and process for fabricating the same |
| US06/398,569 US4447720A (en) | 1979-09-25 | 1982-07-15 | Solid-state image pickup element and process for fabricating the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54123335A JPS5928063B2 (en) | 1979-09-25 | 1979-09-25 | Manufacturing method of solid-state image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5646568A JPS5646568A (en) | 1981-04-27 |
| JPS5928063B2 true JPS5928063B2 (en) | 1984-07-10 |
Family
ID=14858004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54123335A Expired JPS5928063B2 (en) | 1979-09-25 | 1979-09-25 | Manufacturing method of solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5928063B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60174132A (en) * | 1984-02-20 | 1985-09-07 | キヤノン株式会社 | Optical apparatus having light measuring function |
| JPH0675140B2 (en) * | 1984-04-05 | 1994-09-21 | オリンパス光学工業株式会社 | Display device for microscope photography |
| JP4825542B2 (en) * | 2006-02-23 | 2011-11-30 | 富士フイルム株式会社 | Manufacturing method of solid-state imaging device |
-
1979
- 1979-09-25 JP JP54123335A patent/JPS5928063B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5646568A (en) | 1981-04-27 |
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