JPS592323A - X-ray exposure mask - Google Patents
X-ray exposure maskInfo
- Publication number
- JPS592323A JPS592323A JP57111104A JP11110482A JPS592323A JP S592323 A JPS592323 A JP S592323A JP 57111104 A JP57111104 A JP 57111104A JP 11110482 A JP11110482 A JP 11110482A JP S592323 A JPS592323 A JP S592323A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ray
- mask
- organic
- protection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006096 absorbing agent Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000001681 protective effect Effects 0.000 claims description 16
- 229920001721 polyimide Polymers 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 4
- 238000001015 X-ray lithography Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 229920002799 BoPET Polymers 0.000 abstract description 2
- 239000005041 Mylar™ Substances 0.000 abstract description 2
- 239000004743 Polypropylene Substances 0.000 abstract description 2
- 230000002411 adverse Effects 0.000 abstract description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 abstract description 2
- -1 polypropylene Polymers 0.000 abstract description 2
- 229920001155 polypropylene Polymers 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 229920002189 poly(glycerol 1-O-monomethacrylate) polymer Polymers 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は１μｍ以下の微細パターンの複写に威力を発揮
するＸｄｌＪソグラフィの分野におけるＸｉ露光被照射
体に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an object to be exposed to Xi in the field of XdlJ lithography, which is effective in copying fine patterns of 1 μm or less.
軟Ｘ線を用いたＸ線リソグラフィによれば、高解像度パ
ターンの複写が可能であることがエレクトロニクス・レ
ターズ（Ｅｌｅｃｔｒｏｎｉｃｓ Ｌｅｔｔｅｒｓ）第
８巻第４号第１０２−１０４頁（１９７２年）に発表さ
れて以来、Ｘ１ｌＪソグラフイに関する研究開発が精力
的に進められてきた。Ｘ線源、Ｘ線マスク、アライメン
ト方式、Ｘ線レジスト、そしてＸ線露光装置とその各々
において技術の蓄積がなされ、実される光′電子・オー
ジェ電子の効果に関する。It was announced in Electronics Letters, Vol. 8, No. 4, pp. 102-104 (1972) that high-resolution patterns can be copied using X-ray lithography using soft X-rays. Since then, research and development regarding X1lJ thography has been vigorously pursued. This book relates to X-ray sources, X-ray masks, alignment methods, X-ray resists, and X-ray exposure equipment, and the effects of photoelectrons and Auger electrons that have been realized through the accumulation of technology in each of them.
もつとも、光電子・オージェ電子放出に関する指摘は１
９７５年に発行された刊行物ジャーナル・オブ・バキュ
ウム・サイエンス・アンド・テクノロジー（Ｊｏｕｒｎ
ａｌ ｏｆ Ｖａｃｕｕｍ ５ｃｉｅｎｃｅ ａｎｄ
Ｔｅｃ−ｈｎｏｌｏｇｙ）第１２巻第６号第１３２ト１
３３１頁になされている。すなわち、）Ｌｈ Ｌａ線（
波長４．６Ａ）ＰｄＬａｉｊ波長４．３７ Ａ ）等（
２）ヨり短ｖ−％ 性Ｘ線を使用する場合に、ＡＪＫα
ｍ（波長８．３４Ａ）使用の場合に比べて、より多く放
出される高エネルギー成分である連続Ｘ線による影響が
指摘されている。この連続Ｘ線によってマスクコントラ
ストが低下し、さらにはマスク上のＡｕ吸収体パターン
及びレジスト基板から光電子・オージェ′電子が放出さ
れ、レジストのバターニングに影響を与えることが報告
されている。However, the points regarding photoelectron/Auger electron emission are 1.
Journal of Vacuum Science and Technology, a publication published in 1975.
al of Vacuum 5science and
Tec-hnology) Volume 12 No. 6 No. 132 To1
It is written on page 331. That is, )Lh La line (
Wavelength 4.6A) PdLaij Wavelength 4.37A) etc.
2) When using short v-% sexual X-rays, AJKα
It has been pointed out that the influence of continuous X-rays, which are high-energy components that are emitted in larger amounts, than when using m (wavelength: 8.34 A). It has been reported that the continuous X-rays reduce the mask contrast, and that photoelectrons and Auger' electrons are emitted from the Au absorber pattern on the mask and the resist substrate, thereby affecting the patterning of the resist.
ところが、本発明者はＡｌターゲットを用いたＸ線露光
において、次の新しい実験事実を見出した。第１図にそ
の特性が示されている。However, the present inventor discovered the following new experimental fact in X-ray exposure using an Al target. Its characteristics are shown in FIG.
本図は、ネガレジス）ＰＧＭＡの残存膜厚の露光雰囲気
真空度依存性を示している。露光雰囲気とは、マスクと
ウェハーとの間の空間の雰囲気を意味する。第１図から
露光雰囲気真空度が悪化すると、Ｘ線マスク無しの場合
（○印のデータ）は、ＰＧＭＡ残存膜厚は次第に減少し
、一方１７ｎｍＡｕ膜を有するマスクを開いた場合（ｑ
ｈ印のデータ）は、ＰＧＭＡ残存膜厚は次第に増加する
ことが分ふる。このとき、ＰＧＭＡに対するＡＩ Ｋ
ａ縁のドース量は３０ ｒｒＪ／ｃｒｌｔ 、マスクと
ウェハーとのギャップは２０μｍに固定された。Ｘ線マ
スク無しの場合の傾向は、空気中の酸素による架橋反応
阻止効果であることが、はぼ纏められている。問題は厚
さ１７ｎｍのＡｕ膜を有するマスクを用いた場合である
。露光雰囲気真空度の悪化によるＰＧＭＡ残存膜厚の顕
著な増加傾向は、新たに見出された実験事実であり、か
つレジストのパターニングの精度向上に対ｌ−で、一つ
の大きな問題点である。つまり残存膜厚が増加するとマ
スク上のパターンを精度良く転寥できなくなる。特にサ
ブミクロン幅パターンの正確な複ずを実現するという観
点においてこのようなＰＧＭＡ残存膜厚の増加は重大な
問題点である。前２者の実験（−印と０印）条件の大き
な違いは、薄いＡｕ膜の存在の有無である。薄いＡｕ膜
が有るということは、Ａｌターゲットから放射されるＸ
ｍ（主としてにα線）が、Ａｕ膜に吸収されて、Ａｕ膜
から光電子・オージェ電子が放出されることを意味する
。このいわゆる光電効果による光電子・オージェ電子の
放装置は、全ての一印のデータ点において同一である。This figure shows the dependence of the residual film thickness of negative resist (PGMA) on the vacuum degree of the exposure atmosphere. The exposure atmosphere refers to the atmosphere in the space between the mask and the wafer. As shown in Figure 1, as the vacuum level of the exposure atmosphere worsens, the remaining PGMA film thickness gradually decreases when there is no X-ray mask (data marked with ○), while when the mask with a 17 nm Au film is opened (q
It can be seen from the data marked h) that the remaining PGMA film thickness gradually increases. At this time, AI K for PGMA
The a-edge dose was fixed at 30 rrJ/crlt, and the gap between the mask and the wafer was fixed at 20 μm. It has been summarized that the tendency in the case without an X-ray mask is that the crosslinking reaction is inhibited by oxygen in the air. The problem occurs when a mask having a 17 nm thick Au film is used. The tendency for the residual PGMA film thickness to increase markedly due to deterioration of the vacuum degree of the exposure atmosphere is a newly discovered experimental fact, and is a major problem in improving the accuracy of resist patterning. In other words, as the remaining film thickness increases, it becomes impossible to accurately transfer the pattern on the mask. This increase in the remaining PGMA film thickness is a serious problem, especially from the viewpoint of realizing accurate duplication of submicron width patterns. The major difference between the conditions of the former two experiments (-mark and 0 mark) is the presence or absence of a thin Au film. The existence of a thin Au film means that the X emitted from the Al target
This means that m (mainly α rays) is absorbed by the Au film, and photoelectrons and Auger electrons are emitted from the Au film. The emission of photoelectrons and Auger electrons due to the so-called photoelectric effect is the same for every single data point.
にもかかわらず、露光雰囲気真空度の悪化によってＰＧ
ＭＡ残存膜厚が増加するということは、光電子・オージ
ェ電子による露光雰囲気内の空気の電離が、真空度の悪
化に従って増加するだめと考えられる。However, due to deterioration of the vacuum level of the exposure atmosphere, PG
The increase in the MA residual film thickness is considered to be due to the fact that ionization of the air in the exposure atmosphere due to photoelectrons and Auger electrons increases as the degree of vacuum deteriorates.
真空度の悪化は空気の密度の増加を意味するｔ・らこρ
考えは、極めて妥当である。Deterioration of the degree of vacuum means an increase in air density t・rakoρ
The idea is quite reasonable.
すなわち、Ａ、ｕ膜から放出される光電子・オージェ電
子が露光雰囲気中の空気を電離し、その結果発生した全
二次電子がＰＧＭＡの架橋を促進するという効果が、前
記の空気中の酸素による架橋阻止の効果を上まわるため
であると解釈される。In other words, photoelectrons and Auger electrons emitted from the A and U films ionize the air in the exposure atmosphere, and all secondary electrons generated as a result promote crosslinking of PGMA. It is interpreted that this is because it exceeds the effect of inhibiting crosslinking.
本発明の目的は、このような従来の問題点を、除去せし
めてＸ線マスクから発生する光電子・オージェ電子によ
る悪影響を回避し、Ｘ線リソグラフィにおける微細パタ
ーン複写を、より精度良く行うとどのできるＸ線露光マ
スクを提供することにある０
本発明によれば、Ｘｉ吸収体パターン、マスク基板、及
び基板支持体から成るＸ線露光マスクにおいて、前記Ｘ
練成ｉｌ１体パターンが存在する側の表面に多層の保護
膜を有することを特徴としたＸ線露光マスクが得られる
。The purpose of the present invention is to eliminate these conventional problems, avoid the adverse effects of photoelectrons and Auger electrons generated from the X-ray mask, and improve the accuracy of fine pattern copying in X-ray lithography. According to the present invention, an X-ray exposure mask comprising an Xi absorber pattern, a mask substrate, and a substrate support, in which the
An X-ray exposure mask is obtained which is characterized by having a multilayer protective film on the surface on the side where the trained IL1 body pattern is present.
以下本発明について、実施例を示す図面等を参照して詳
しく説明する。Ｘ機マスクの吸収体パターンから放出さ
れる光電子・オージェ電子による露光雰囲気の空気の電
離を防ぐ有力な一手法として吸収体パターンを保護膜で
覆うことが考えられる。本発明者もこの点に気付き、櫨
々の保護膜についての実験検討を行った。The present invention will be described in detail below with reference to drawings showing embodiments. One effective method for preventing the ionization of the air in the exposure atmosphere due to photoelectrons and Auger electrons emitted from the absorber pattern of the X machine mask is to cover the absorber pattern with a protective film. The inventor of the present invention also noticed this point and conducted an experimental study on the protective film of Hashira.
ただし、保護膜を形成する際のポイントとして次の事が
重要である。However, the following points are important when forming a protective film.
（１） 吸収体パターンふら放出される光電子・オー
ジェ電子を十分に吸収できること、＋２）Ｘ線吸収体パ
ターン上に容易に形成がｕｆ能であること、（３）Ｘｍ
マスクの強度、補強の役割も兼ね備える保護膜であるこ
と、等である。これ等の要請を満たす保護膜として最も
有力な候補としてポリイミド膜がある。第２図はポリイ
ミド膜についての本発明者の実験結果である。第１図と
同じ＜ 、ＰＧＭＡ残存膜厚の露光雰囲気真空度依存性
が示されている。ポリイミド膜を保護膜として使った場
合の重大な問題点が第２図から分かる。すなわち、マス
ク無しの場合（○印のデータ）に比べて、厚さ２０ｎＩ
ｎのＡｕ膜を１．４μｍ厚ポリイミド膜で覆った場合（
△印のデータ）は、ＰＧＭＡの残存膜厚が顕著に減少し
ていることである。このようなＰＧＭＡの残存膜厚のよ
り大きな減少は、やはりレジストパターン形成、微細パ
ターンの形成におｔρては大きな問題である。第２図の
１，４μｍ厚のポリイミド膜のみを使用した場合（×印
のデータ）も、Ｘ椀マスク無しの場合（Ｏ印のデータ）
に比べて、ＰＧＭＡの残存膜厚はより少ない。この事は
ポリイミド膜を単独で保護膜として使用することは、あ
まり好１しく無いことを意味している。しかし、ポリイ
ミド膜は、前述の要ＲＡｌ（２）、 （３）を十分溝た
す材料であるから捨て鑓い。そこで、本発明においては
、保護膜を多層構造にすることを提案する。(1) The absorber pattern must be able to sufficiently absorb photoelectrons and Auger electrons emitted, +2) It must be easy to form on the X-ray absorber pattern, and (3) Xm
It is a protective film that also serves as a strength and reinforcement for the mask. A polyimide film is the most promising candidate for a protective film that meets these requirements. FIG. 2 shows the inventor's experimental results regarding a polyimide film. As in FIG. 1, the dependence of the remaining PGMA film thickness on the vacuum degree of the exposure atmosphere is shown. A serious problem when using a polyimide film as a protective film can be seen from FIG. In other words, compared to the case without a mask (data marked with ○), the thickness is 20 nI.
When an Au film of n is covered with a 1.4 μm thick polyimide film (
Data marked with △) indicates that the remaining film thickness of PGMA is significantly reduced. Such a larger reduction in the residual film thickness of PGMA is still a big problem in resist pattern formation and fine pattern formation. In Figure 2, when only a 1.4 μm thick polyimide film is used (data marked with an "X"), and without an X-bowl mask (data marked with an "O")
The remaining film thickness of PGMA is smaller than that of . This means that it is not very preferable to use the polyimide film alone as a protective film. However, the polyimide film is a material that satisfies the above-mentioned requirements for RAl (2) and (3), so it should be discarded. Therefore, in the present invention, it is proposed that the protective film has a multilayer structure.
以下説明においては、便宜りに層構造を取上げるが、そ
のまま三層以上の多層＋＃造に適用できる事は、言うま
でも無い。第３図は一実施例を示すＸ線露光マスクの概
略図である。Ｘ−マスクｌは、マスク基板２．Ｘｓ吸暇
体パターン３．及び基板支持体４力＼ら成る。有機膜力
為ら成る保護膜５を、吸収体パターン上に形成し、さら
に無機絶縁膜の保護膜６を、・１機保護膜上に形成する
。In the following explanation, a layered structure will be discussed for convenience, but it goes without saying that the structure can be applied to a multilayered structure with three or more layers. FIG. 3 is a schematic diagram of an X-ray exposure mask showing one embodiment. The X-mask l is attached to the mask substrate 2. Xs absorption body pattern 3. and the substrate support 4 force\. A protective film 5 made of an organic film is formed on the absorber pattern, and a protective film 6 of an inorganic insulating film is formed on the protective film.
−例として有機保護膜としてポリイミド膜１μｍ厚位、
無機絶縁膜として、ブラズＹＣＶＤ法で形成されたシリ
コン窒化膜数千Ａ厚の構成がある。- For example, a polyimide film with a thickness of about 1 μm as an organic protective film,
As the inorganic insulating film, there is a structure of a silicon nitride film several thousand angstroms thick formed by Blaz YCVD method.
シリコン窒化膜についての検討結果が第４図に示されて
いる◎シリコン窒化膜のみを使用した場合（×印のデー
タ）、及びＡｕｌ１ｇをシリコン窒化膜で覆った場合（
Δ印のデータ）は、ＸＩＭマスク無しの場合（○印のデ
ータ）と、はぼ一致している。The study results for silicon nitride film are shown in Figure 4. ◎ When only silicon nitride film is used (data marked with an x), and when Aul 1g is covered with silicon nitride film (
The data marked with Δ) almost match the data without the XIM mask (data marked with ○).
す、うわち、シリコン窒化膜は、Ａｕ吸収体からの光電
子オージェシ子全十分ＶＣ吸収できると１える。It is believed that the silicon nitride film can sufficiently absorb all the photoelectron oscillators from the Au absorber.
し力・し、シリコン窒化膜のみでは、前記の要請（３）
を満たさない。従って、ポリイミド膜の上にシリコン窒
化膜を形成した保蝕膜は、前述の３つの要請を満たし、
乃・つ、本発明の目的を達成することができる。However, with just a silicon nitride film, the above request (3) cannot be met.
does not satisfy. Therefore, a protective film in which a silicon nitride film is formed on a polyimide film satisfies the three requirements mentioned above.
In this way, the object of the present invention can be achieved.
まだ、この実施列においては、シリコン窒化膜を上層に
、ポリイミド膜を下層に形成しているが、この逆でもよ
い。即ち、一般に無機絶縁膜上にＸｍＶｍタスク械的強
度をも／こせるに十分な厚さの有機膜を形成するという
順序でもよい。In this embodiment, the silicon nitride film is formed as an upper layer and the polyimide film is formed as a lower layer, but the reverse may be used. That is, in general, an organic film having a thickness sufficient to have a mechanical strength of XmVm may be formed on an inorganic insulating film.
有機保護膜として、ポリイミド膜の他に、パリレン膜、
マイラー膜、ポリプロピレン膜、ＡＺ系レジスト等の種
々のレジスト材料（ＢＢ−Ｘｆｉレジストも含む）、導
電性有機膜等も含まれる。In addition to polyimide film, parylene film,
Various resist materials such as Mylar film, polypropylene film, and AZ resist (including BB-Xfi resist), conductive organic films, and the like are also included.
無機絶縁膜として、シリコン窒化膜の他に、８ｉ０゜膜
、Ｓｉ３Ｎ、膜、ＡＡ、０．膜、８ｉＣ膜、ＢＮ膜等も
含まれる。As the inorganic insulating film, in addition to the silicon nitride film, 8i0° film, Si3N film, AA film, 0.0° film, etc. Also included are films, 8iC films, BN films, and the like.
以上説明したように本発明を適用するならば、第一にＸ
線リングラフィにおけるサブミクロン幅パターンの複写
を、より確実にでき、第二に実用的なＸ線マスクを得る
ことができ、第三に露光雰囲気に対して大きな自由度を
与えることができる。If the present invention is applied as explained above, firstly,
It is possible to more reliably copy submicron width patterns in line phosphorography, secondly, it is possible to obtain a practical X-ray mask, and thirdly, it is possible to provide a greater degree of freedom regarding the exposure atmosphere.
第１図は従来技術の問題点である）’ＧＭＡ残存膜厚の
露光雰囲気真空度依存性を示した図、第２図はポリイミ
ド膜の特性を示した図、第３図は不発明にかかる実施例
であるＸ線露光マスクの概略図第４図はシリコン窒化膜
の特性を示した図である。
図中の番号は以下のものを示している。
１・・・・・・・・・Ｘ ＃Ｍ−ｒスク、２・・・・・
・・・・マスク基板、３・・・・・・・・・吸収体パタ
ーン、４・・・・・・・・基板支持体、５．６・・・・
・・・・保護膜。
代理人９１理士内原 音Figure 1 is a diagram showing the dependence of the remaining GMA film thickness on the vacuum degree of the exposure atmosphere (Fig. 1 is a problem with the prior art), Figure 2 is a diagram showing the characteristics of polyimide film, and Figure 3 is related to the non-invention. FIG. 4, a schematic diagram of an X-ray exposure mask according to an embodiment, is a diagram showing the characteristics of a silicon nitride film. The numbers in the figure indicate the following. 1......X #M-rsk, 2...
...Mask substrate, 3...Absorber pattern, 4...Substrate support, 5.6...
····Protective film. Agent 91 Physician Oto Uchihara
Claims (1)
成るＸ線露光マスクにおいて、前記Ｘ！吸収体パターン
が存在する側の表面に、少なくとも一層の無機絶縁膜と
、少なくとも一層の有機膜を含む保護膜を設けたことを
特徴とするＸ線露光マスク。In an X-ray exposure mask comprising an X-ray absorber pattern, a mask substrate, and a substrate support, the X! An X-ray exposure mask characterized in that a protective film including at least one inorganic insulating film and at least one organic film is provided on the surface on the side where an absorber pattern is present.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57111104A JPS592323A (en) | 1982-06-28 | 1982-06-28 | X-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57111104A JPS592323A (en) | 1982-06-28 | 1982-06-28 | X-ray exposure mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS592323A true JPS592323A (en) | 1984-01-07 |
Family
ID=14552495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57111104A Pending JPS592323A (en) | 1982-06-28 | 1982-06-28 | X-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS592323A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63201513A (en) * | 1987-02-18 | 1988-08-19 | Hitachi Ltd | In-tube running device |
| EP0837365A1 (en) * | 1996-10-16 | 1998-04-22 | International Business Machines Corporation | Membrane mask structure, fabrication and use |
-
1982
- 1982-06-28 JP JP57111104A patent/JPS592323A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63201513A (en) * | 1987-02-18 | 1988-08-19 | Hitachi Ltd | In-tube running device |
| EP0837365A1 (en) * | 1996-10-16 | 1998-04-22 | International Business Machines Corporation | Membrane mask structure, fabrication and use |
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