JPS59229858A - バイポ−ラ形半導体装置 - Google Patents
バイポ−ラ形半導体装置Info
- Publication number
- JPS59229858A JPS59229858A JP58104260A JP10426083A JPS59229858A JP S59229858 A JPS59229858 A JP S59229858A JP 58104260 A JP58104260 A JP 58104260A JP 10426083 A JP10426083 A JP 10426083A JP S59229858 A JPS59229858 A JP S59229858A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- type
- transistor
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
- H10D84/652—Integrated injection logic using vertical injector structures
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104260A JPS59229858A (ja) | 1983-06-13 | 1983-06-13 | バイポ−ラ形半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104260A JPS59229858A (ja) | 1983-06-13 | 1983-06-13 | バイポ−ラ形半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59229858A true JPS59229858A (ja) | 1984-12-24 |
| JPH0426223B2 JPH0426223B2 (enrdf_load_stackoverflow) | 1992-05-06 |
Family
ID=14375958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58104260A Granted JPS59229858A (ja) | 1983-06-13 | 1983-06-13 | バイポ−ラ形半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59229858A (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5361981A (en) * | 1976-11-16 | 1978-06-02 | Toshiba Corp | Semiconductor device |
-
1983
- 1983-06-13 JP JP58104260A patent/JPS59229858A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5361981A (en) * | 1976-11-16 | 1978-06-02 | Toshiba Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0426223B2 (enrdf_load_stackoverflow) | 1992-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4027325A (en) | Integrated full wave diode bridge rectifier | |
| JPH02275675A (ja) | Mos型半導体装置 | |
| US4700213A (en) | Multi-drain enhancement JFET logic (SITL) with complementary MOSFET load | |
| US4935799A (en) | Composite semiconductor device | |
| Hewlett | Schottky I/sup 2/L | |
| US3947865A (en) | Collector-up semiconductor circuit structure for binary logic | |
| US4260430A (en) | Method of manufacturing a semiconductor device | |
| JPS59229858A (ja) | バイポ−ラ形半導体装置 | |
| JPS61113270A (ja) | モノリシックトランジスタ論理回路 | |
| JP2712448B2 (ja) | 半導体装置 | |
| JPS60138963A (ja) | 半導体装置 | |
| JPH0337314B2 (enrdf_load_stackoverflow) | ||
| JPS61102074A (ja) | シリ−ズダイオ−ド | |
| JPS6220416A (ja) | 半導体集積回路 | |
| JPH0414929Y2 (enrdf_load_stackoverflow) | ||
| JPS5832505B2 (ja) | 半導体集積回路 | |
| JPH0547780A (ja) | 半導体装置 | |
| JPS59181058A (ja) | 半導体装置 | |
| JPS61136254A (ja) | 複合形半導体装置 | |
| JPH0418473B2 (enrdf_load_stackoverflow) | ||
| JPH0618254B2 (ja) | 半導体集積回路 | |
| JPH0464184B2 (enrdf_load_stackoverflow) | ||
| JPS5928991B2 (ja) | 半導体集積回路 | |
| JPS6118173A (ja) | トランジスタ | |
| JPS60152062A (ja) | 半導体装置 |