JPS59229803A - Method of producing ptc thermistor - Google Patents
Method of producing ptc thermistorInfo
- Publication number
- JPS59229803A JPS59229803A JP58104483A JP10448383A JPS59229803A JP S59229803 A JPS59229803 A JP S59229803A JP 58104483 A JP58104483 A JP 58104483A JP 10448383 A JP10448383 A JP 10448383A JP S59229803 A JPS59229803 A JP S59229803A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- pto
- thermistor
- welding
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 10
- 239000011521 glass Substances 0.000 claims description 33
- 238000003466 welding Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 6
- 229910052573 porcelain Inorganic materials 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 14
- 238000007789 sealing Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 235000010799 Cucumis sativus var sativus Nutrition 0.000 description 1
- 244000299906 Cucumis sativus var. sativus Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/024—Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being hermetically sealed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
- H01C7/025—Perovskites, e.g. titanates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
- Ceramic Products (AREA)
- Glass Compositions (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明はガラス封入ｍ ｐ ’ｒ ｏサーミスタの製造
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a glass-encapsulated m p'r o thermistor.
周知のようにサーミスタは温度だけを検知するという目
的のため、樹脂やガラスでサーミスタ素子を封入し、ガ
ス、湿度等の温度以外の影響をま −ったく、うけない
ように封入加工がなされている。As is well known, the purpose of a thermistor is to detect only temperature, so the thermistor element is encapsulated in resin or glass, and the encapsulation process is performed to prevent it from being affected by anything other than temperature, such as gas or humidity. There is.
特にＮＴＯサーミスタでは樹脂封入型のディスク型サー
ミスタの他に安価で量産性に富み、特性の安定したガラ
ス封入型サーミスタが実用化されている。In particular, among NTO thermistors, in addition to resin-filled disk-type thermistors, glass-filled thermistors that are inexpensive, mass-producible, and have stable characteristics have been put into practical use.
しかし、ＰＴＯサーミスタではガラス封入型サーミスタ
は実用化されておらず、樹脂封入型のディスク麗サーミ
スタやヒータ用として電極に金属この理由はＰＴＯサー
ミスタ素子のガラス溶着封入時における温度、雰囲気が
ＰＴＯサーミスタの特性に大きく影響を及ぼし、目的の
特性が得られないことに起因している。However, glass-encapsulated PTO thermistors have not been put to practical use, and are used in resin-encapsulated disk-type thermistors and heaters with metal electrodes. This is due to the fact that the characteristics are greatly affected and the desired characteristics cannot be obtained.
そこで本発明者等はガラス封入型ＰＴＯサーミスタに関
して種々実験研究の結果、従来のガラス溶着封入方法で
はＰＴＯサーミスタ素子がメラス溶着封入時に還元雰囲
気にさらされ、また、ガラス溶着耐大作業温度が６１０
℃を越える温度になることを確認し、このことがＰＴＯ
サーミスタの特性に悪影譬を及はしているという知見を
得た。As a result of various experimental studies regarding glass-encapsulated PTO thermistors, the present inventors have found that in the conventional glass welding and encapsulation method, the PTO thermistor element is exposed to a reducing atmosphere during meras welding and encapsulation.
Check that the temperature exceeds ℃, and this indicates that the PTO
It was discovered that the characteristics of the thermistor were affected negatively.
本発明はこの知見に基づきなされたもので、ガラス溶着
封入しｆｃＰＴＯサーミスタにおいて抵抗変化が十分に
大きく、スイッチング温度において、著しい抵抗変化を
し、特性の安定したガラス封入ｆｉＰＴｏサーミスタを
安価に提供しようとするものである。The present invention has been made based on this knowledge, and aims to provide at a low cost a glass-filled fiPTO thermistor that has a sufficiently large resistance change, a significant change in resistance at the switching temperature, and stable characteristics. It is something to do.
即ち、第１の発明は正の抵抗温度特性を有する半導体磁
器を軟化点５６０℃以下の低融点ガラスを用いてガラス
溶着封入することを特徴とするＰＴＯサーミスタの製造
法であり、第２の発明は、正の抵抗温度特性を有する半
導体磁器を空気、０２ガスの一種又はその混合雰囲気下
（ただし、空気は容量百分率で０％以上１００％以下）
において軟化点５６０℃以下の低融点ガラスを用いてガ
ラス溶着封入することを特徴とするＰＴＯサーミスタの
製造法である。That is, the first invention is a method for manufacturing a PTO thermistor, characterized in that semiconductor porcelain having positive resistance-temperature characteristics is glass-welded and sealed using low-melting glass having a softening point of 560° C. or less, and the second invention is a method for manufacturing a PTO thermistor. Semiconductor porcelain with positive resistance-temperature characteristics is exposed to air, one type of 02 gas, or a mixture thereof (however, air is 0% or more and 100% or less in terms of volume percentage).
This is a method for manufacturing a PTO thermistor characterized by glass welding and encapsulation using a low melting point glass having a softening point of 560° C. or lower.
以下、本発明の具体的な実施例について説明する。Hereinafter, specific examples of the present invention will be described.
Ｎ１図拡実施例の各工程を示すもので、先ず、牛導体化
チタン酸バリウム磁器１をガラス管の長さに対応した任
意の厚さにスライスし、銀電極２゜２を素子両面に塗布
し、これを６００℃２０分間焼付ける。第１図（、）は
銀電極焼付は後の素子の断面図である。Figure N1 shows each step of the enlarged example. First, the conductorized barium titanate porcelain 1 is sliced into an arbitrary thickness corresponding to the length of the glass tube, and silver electrodes 2°2 are applied to both sides of the element. Then, bake this at 600°C for 20 minutes. FIG. 1 (,) is a cross-sectional view of the device after the silver electrode has been baked.
次に第１図（ｂ）に示すように、ガラス管の径に対応し
た任意の長さに素子を切断する。縦横の線は切断線であ
る。Next, as shown in FIG. 1(b), the element is cut into an arbitrary length corresponding to the diameter of the glass tube. The vertical and horizontal lines are cutting lines.
この素子を軟化点５ｊＯ℃以下のガラス管１４にう。
（この
溶着封止の作業温度杖ガラスの軟化点によって決定され
、一般にガラス軟化点の５０℃以上高い温度で行なわれ
る。This element is placed in a glass tube 14 having a softening point of 5jO<0>C or less.
(The working temperature for this welding and sealing is determined by the softening point of the glass, and is generally performed at a temperature 50° C. or more higher than the glass softening point.)
従来のガラス溶着封入は軟化点５６０℃を越える組成の
ガラスを使い、その溶着耐大作業温度は６１０℃を越え
る温夏で行なわれておシ、この条件でガラス溶着封入を
行なり九ＰＴＯサーミスタは封着前の特性にくらべ大き
く劣化する。しかし、本発明のように軟化点５６０℃以
下の低融点ガラスを用いて溶着封入を行なうと劣化は少
なく、安定したＰＴＯサーミスタが得られる。Conventional glass welding and encapsulation uses glass with a composition that has a softening point of over 560°C, and its maximum welding working temperature exceeds 610°C, which is carried out in warm summers. The characteristics deteriorate significantly compared to the characteristics before sealing. However, if welding and encapsulation is performed using a low melting point glass with a softening point of 560° C. or less as in the present invention, there is little deterioration and a stable PTO thermistor can be obtained.
第２図にキューリ一点１２０℃のＰＴＯサーミスタ素子
を空気中でガラス溶着封入行なった結果を示す。FIG. 2 shows the results of a PTO thermistor element heated to a temperature of 120° C. in air by glass welding.
溶着封入前の特性にくらべ、わずかに特性は劣化するが
、軟化点５３６℃のガラスおよび軟化点５６０℃のガラ
スで封着を行なったＰＴＯサーミスタ素子の特性が優れ
ていることがわかる。It can be seen that the characteristics of the PTO thermistor elements sealed with glass with a softening point of 536° C. and glass with a softening point of 560° C. are excellent, although the characteristics are slightly deteriorated compared to the characteristics before welding and sealing.
また、ここではキューリ一点１２０℃のＰＴＯサーミス
タ素子について行なったがキューリ一点の異なるＰＴＯ
サーミスタ素子においても同様の結果が得られた。In addition, although the PTO thermistor element with a single Curie point of 120°C was tested here, the PTO with a different Curie point
Similar results were obtained for thermistor elements.
従来からジュメット線の酸化やヒータの酸化を防ぐため
、Ｎ２ガスや人ｒガスあるいは真空中でガラスの溶着封
入が行なわれてきた。この方法はＮＴＯサーミスタのガ
ラス溶着封入に行なわれることが多いがＰＴＯサーミス
タの場合、還元雰囲気中損なわれる。Conventionally, in order to prevent oxidation of Dumet wires and heaters, welding and sealing of glass has been carried out in N2 gas, hydrogen gas, or vacuum. This method is often used for glass welded encapsulation of NTO thermistors, but is compromised in reducing atmospheres for PTO thermistors.
そζで本発明者等は種に実験研究の結果空気、０雪ガス
の一種又Ｍその混合雰囲気下（ただし空気は容量百分率
で０チ以上１００％以下）においてガラス溶着封入を行
なうとＰＴＯ特性の優れたサーミスタが得られることを
見い出した。Therefore, the present inventors conducted experimental research and found that when glass welding is performed in an atmosphere of air, 0 snow gas, or a mixed atmosphere of M (however, the volume percentage of air is 0 gas or more and 100% or less), the PTO characteristics change. It was discovered that an excellent thermistor can be obtained.
第３図は各種ガスを流入してガラス溶着封入を行なった
ＰＴＯサーミスタの特性図を示すもので、ここでは軟化
点５６０℃のガラスｔｌ−便い、６１０℃においてキュ
ーリ一点１２０℃のＰＴＯサーｉスタ素子のガラス溶着
封入を行なった。Figure 3 shows the characteristics of a PTO thermistor that is sealed by glass welding with various gases flowing into it. The star element was encapsulated by glass welding.
図かられかるように、０２ガス中あるいは空気中におい
てガラス溶着封入を行なうと、真空中、不活性ガス中、
あるいは還元雰囲気中にくらべＰＴＯ特性の優れたＰＴ
Ｏサーミスタが得られる。As can be seen from the figure, when glass welding and encapsulation is performed in 02 gas or air, in vacuum or inert gas,
Or, PT with superior PTO characteristics compared to in a reducing atmosphere.
An O thermistor is obtained.
第３図には０３ガス中、および空気中のみを図示したが
、空気と０２ガスの混合雰囲気下においても＃ｌぼ同様
の特性が得られる。また、ここではキューリ一点１２０
℃のＰＴＯサーミスタ素子について行なったがキューリ
一点の異なるＰＴＯサーミスタ素子においても同様の結
果が得られる。Although only 03 gas and air are shown in FIG. 3, the same characteristics as #1 can be obtained even in a mixed atmosphere of air and 02 gas. Also, here one cucumber costs 120
Although the experiment was carried out for a PTO thermistor element having a temperature of 0.degree. C., similar results can be obtained for a PTO thermistor element having a different Curie point.
第４図は軟化点５３６℃のガラスを用い、０２ガス中、
および空気中においてキューリ一点１２０℃のＰＴＯサ
ーミスタ素子のガラス溶着封入を行なったＰＴＯサーミ
スタの抵抗・温度特性図である。Figure 4 shows glass with a softening point of 536°C in 02 gas.
FIG. 3 is a resistance/temperature characteristic diagram of a PTO thermistor in which the PTO thermistor element is sealed with glass welding at a single curie point of 120° C. in air.
図かられかるように封着前の′＃性とほぼ同様の抵抗変
化の大きい特性をもつＰＴＯサーミスタが得られること
がわかる。As can be seen from the figure, a PTO thermistor can be obtained which has a large resistance change characteristic that is almost the same as the characteristic before sealing.
第４図には０２ガス中、および空気中での製造の場合の
みを図示したが、空気と０２ガスの混合雰囲下において
もほぼ同様の特性が得られる。また。Although FIG. 4 shows only the case of production in 02 gas and air, almost the same characteristics can be obtained in a mixed atmosphere of air and 02 gas. Also.
ここではキューリ一点１２０℃のＰＴＯサーミスタ素子
について行なったが、キューリ一点の異なるＰＴＯサー
ミスタ素子においても同様の結果が得られる。Here, the results were carried out for a PTO thermistor element with a Curie point of 120° C., but similar results can be obtained with a PTO thermistor element having a different Curie point.
なお、ここでは溶着封止用ヒータとしてカーゼンヒータ
治具を用いたが、他のヒータ治具％例えばメタルヒータ
治具を用いても同様の結果が得られる。Note that, although a Cursen heater jig was used here as the heater for welding and sealing, similar results can be obtained by using other heater jig, such as a metal heater jig.
以上、述べたように正の抵抗！Ｌ度時特性有する半導体
磁器を使ってガラス封入型ＰＴＯサーミスタを製造する
場合、軟化点５６０℃以下の低融点ガラスを用いること
によって、また、そのガラス溶着を空気中又は０２ガス
中若くは空気と０２ガスの混合雰囲気下で行うことによ
って優れた特性を有するＰＴＯサーミスタを安価に製造
することができるもので１本発明は工学的価値が高いも
のである。As mentioned above, positive resistance! When manufacturing a glass-filled PTO thermistor using semiconductor porcelain that has L degree characteristics, it is necessary to use a low melting point glass with a softening point of 560°C or less, and to melt the glass in air or in 02 gas or with air. The present invention has high engineering value because it allows a PTO thermistor with excellent characteristics to be manufactured at low cost by carrying out the process in a mixed atmosphere of 02 gas.
嬉１図は本発明実施例の製造工程を示す図、第２図〜第
４図は夫々製造条件の異なる各製品の温度−比抵抗特性
図でるる。
１・・・ＰＴＯサーミスタ素子、２・・・銀電極、３・
・・ジュメット線、４・・・ガラス管Figure 1 is a diagram showing the manufacturing process of an embodiment of the present invention, and Figures 2 to 4 are temperature-resistivity characteristic diagrams of each product under different manufacturing conditions. 1... PTO thermistor element, 2... silver electrode, 3...
...Dumet wire, 4...Glass tube
Claims (1)
点５６０℃以下の低融点ガラスを用いてガラス溶着封入
することを特徴とするＰＴＯサーミスタの製造法。 偉）正の抵抗温度特性を有する半導体磁器を空気、０２
ガスの一種又はその混合雰囲気下（ただし、空気は容量
百分率でＯチ以上１００％以下）において軟化点５６０
℃以下の低融点ガラスを用いてガラス溶着封入すること
を特徴とするＰＴＯサーミスタの製造法。(1) A method for manufacturing a PTO thermistor, characterized in that semiconductor porcelain having positive resistance-temperature characteristics is glass-welded and sealed using low-melting glass having a softening point of 560° C. or less. 02) Semiconductor porcelain with positive resistance-temperature characteristics is
Softening point: 560 in an atmosphere of one type of gas or a mixture thereof (however, air has a volume percentage of 0 to 100%)
1. A method for manufacturing a PTO thermistor, characterized by glass welding and encapsulation using low melting point glass below ℃.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104483A JPS59229803A (en) | 1983-06-11 | 1983-06-11 | Method of producing ptc thermistor |
| KR1019840002770A KR900005267B1 (en) | 1983-06-11 | 1984-05-21 | Process for the production of ptc thermistors |
| EP84303796A EP0129997B1 (en) | 1983-06-11 | 1984-06-05 | Process for the production of ptc thermistors |
| DE8484303796T DE3473801D1 (en) | 1983-06-11 | 1984-06-05 | Process for the production of ptc thermistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58104483A JPS59229803A (en) | 1983-06-11 | 1983-06-11 | Method of producing ptc thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59229803A true JPS59229803A (en) | 1984-12-24 |
| JPH0145962B2 JPH0145962B2 (en) | 1989-10-05 |
Family
ID=14381803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58104483A Granted JPS59229803A (en) | 1983-06-11 | 1983-06-11 | Method of producing ptc thermistor |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0129997B1 (en) |
| JP (1) | JPS59229803A (en) |
| KR (1) | KR900005267B1 (en) |
| DE (1) | DE3473801D1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62190302U (en) * | 1986-05-23 | 1987-12-03 | ||
| US5210516A (en) * | 1990-02-22 | 1993-05-11 | Murata Manufacturing Co., Ltd. | Ptc thermistor and ptc thermistor producing method, and resistor with a ptc thermistor |
| JPH1055903A (en) * | 1996-08-09 | 1998-02-24 | Mitsubishi Materials Corp | Structure of electronic component |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL287531A (en) * | 1962-08-11 | |||
| US3377561A (en) * | 1965-07-13 | 1968-04-09 | Bell Telephone Labor Inc | Positive temperature coefficient titanate thermistor |
| LU69220A1 (en) * | 1973-06-18 | 1974-04-08 | ||
| US4276536A (en) * | 1979-09-04 | 1981-06-30 | Scully Electronic Systems, Inc. | Self-heating thermistor probe for low temperature applications |
-
1983
- 1983-06-11 JP JP58104483A patent/JPS59229803A/en active Granted
-
1984
- 1984-05-21 KR KR1019840002770A patent/KR900005267B1/en not_active IP Right Cessation
- 1984-06-05 DE DE8484303796T patent/DE3473801D1/en not_active Expired
- 1984-06-05 EP EP84303796A patent/EP0129997B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3473801D1 (en) | 1988-10-06 |
| EP0129997A1 (en) | 1985-01-02 |
| KR850000811A (en) | 1985-03-09 |
| KR900005267B1 (en) | 1990-07-21 |
| JPH0145962B2 (en) | 1989-10-05 |
| EP0129997B1 (en) | 1988-08-31 |
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