JPS59228315A - Method of producing partial silver lead frame - Google Patents

Method of producing partial silver lead frame

Info

Publication number
JPS59228315A
JPS59228315A JP10197583A JP10197583A JPS59228315A JP S59228315 A JPS59228315 A JP S59228315A JP 10197583 A JP10197583 A JP 10197583A JP 10197583 A JP10197583 A JP 10197583A JP S59228315 A JPS59228315 A JP S59228315A
Authority
JP
Japan
Prior art keywords
silver
plating
lead frame
current
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10197583A
Other languages
Japanese (ja)
Inventor
里 英明
山岸 良三
修 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP10197583A priority Critical patent/JPS59228315A/en
Publication of JPS59228315A publication Critical patent/JPS59228315A/en
Pending legal-status Critical Current

Links

Landscapes

  • Non-Insulated Conductors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は半導体に使用される部分銀メッキしたリードフ
レームの製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing partially silver-plated lead frames used in semiconductors.

半導体に使用するリードフレームへのメッキは、従来全
面メッキが行われていたが、貴金属の使用量を減らして
コストダウンを計る目的から、金や銀のメッキには、ス
ポット又はストライプ状の部分メッキが主流になりつつ
ある。貴金属を部分メッキを行うのに塗料やテープなど
の絶縁物でメツキネ要部をマスキングして、目的とする
部分にのみメッキが行われる。しかしながら、機械的に
マスキングする場合、目的とする部分以外の導体面にも
メッキ液が接触するため、゛こ\に金や銀の置換析出が
おこる。また密着力を向上させるためにストライクメッ
キを全面に行なう場合もある。
Traditionally, lead frames used for semiconductors were plated on the entire surface, but in order to reduce costs by reducing the amount of precious metals used, spot or stripe-like partial plating is used for gold and silver plating. is becoming mainstream. When selectively plating precious metals, the main parts of the metal are masked with an insulating material such as paint or tape, and plating is applied only to the intended areas. However, when masking is performed mechanically, the plating solution comes into contact with conductor surfaces other than the intended portions, resulting in substitutional precipitation of gold and silver there. Additionally, strike plating may be applied to the entire surface to improve adhesion.

これらの目的とする部分以外に析出又は残存している貴
金属は外観を悪くすることや、特に銀の場合にはマイグ
レーションが起こる等の問題から、これを剥離して除く
必要がある。
Precious metals precipitated or remaining in areas other than these intended areas must be removed by peeling because of problems such as poor appearance and, especially in the case of silver, migration.

剥離の方法としては、リードツレ−ムラ剥11Jt液中
に浸漬して化学的に溶解する方法や、剥離液中で導体を
陽極として電解する方法等が用いられている。
As a method of stripping, a method of chemically dissolving the material by immersing it in a lead-tree unevenness stripping 11Jt solution, a method of electrolyzing the conductor in a stripping solution using the conductor as an anode, etc. are used.

しかしながら、化学的に溶解する方法では、溶解速度が
経時的に変化し、管理が困難であり、また液の一寿命が
短いという問題がある。
However, the chemical dissolution method has the problem that the dissolution rate changes over time, making it difficult to control, and that the lifetime of the solution is short.

一方、電解して剥離する方法では、必要部分の銀の溶解
量を多くしないとムラが発生したり、光沢メッキの場合
に光沢が悪くなるという問題があるため、約1μ以上溶
解する必要がある。そのだめ、メッキの際に、最終的に
目的とする厚さよりも約1μ厚くメッキすることが必要
となり、コスト上昇の原因となっている。
On the other hand, with the method of peeling off by electrolysis, there is a problem that unevenness will occur unless the amount of silver dissolved in the necessary areas is large, and the gloss will deteriorate in the case of bright plating, so it is necessary to dissolve more than about 1 μm. . Unfortunately, during plating, it is necessary to plate approximately 1 μ thicker than the final target thickness, which causes an increase in cost.

本発明の目的は、前記した従来技術の欠点を解消し、少
ない溶解量で外観の良い部分メツキリ・−ドフレームを
得ることにある。
An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and to obtain a partially-metallic lid frame with a good appearance with a small amount of melting.

すなわち、本発明は、銅、銅合金又はFe−Ni合金を
導体とする表面に電気メッキにより銀を部分的に設けた
後に、置換析出又はストライクメッキにより該導体の不
要部分に付着している銀を陽極処理して剥離する半導体
用部分銀リードフレームの製造方法において、剥離する
際の陽極処理を矩形波電流、直流と矩形波電流との併用
、又は直流と交流との併用によって翁うことを特徴とす
る部分銀IJ  FSフレームの製造方法である。
That is, the present invention provides silver that is partially deposited on the surface of a conductor made of copper, copper alloy, or Fe-Ni alloy by electroplating, and then removes silver that has adhered to unnecessary portions of the conductor by substitution precipitation or strike plating. In the manufacturing method of a partially silvered lead frame for a semiconductor, which involves anodizing and peeling off, the anodizing process is carried out using a square wave current, a combination of direct current and square wave current, or a combination of direct current and alternating current. This is a method for manufacturing a featured partial silver IJ FS frame.

以下、本発明を説明する。The present invention will be explained below.

本発明で用いるリードフレーム用の導体とじては、銅、
リン青銅の如き銅合金、及びFe−Ni合金が用いられ
る。本発明においては、このような金属から作られたリ
ードフレーム基体に銀の部分メッキを機械マスクを用い
て行う。一般にメッキ処理に先だって脱脂及び酸洗等を
行い金属面を清浄化したのち、銀の部分メッキの′密着
性を向上させるために、部分メッキを行う前にリードフ
レーム基体に銅ストライク又は銀ストライク(本発明で
はストライクメッキと称する)を施してから、シアン浴
による銀メッキを行なって作成する。
The conductor for the lead frame used in the present invention includes copper,
Copper alloys such as phosphor bronze and Fe-Ni alloys are used. In the present invention, partial silver plating is performed on a lead frame base made of such a metal using a mechanical mask. Generally, prior to plating, the metal surface is cleaned by degreasing, pickling, etc., and then a copper strike or silver strike is applied to the lead frame base before partial plating to improve the adhesion of silver partial plating. In the present invention, after performing strike plating (referred to as strike plating), silver plating is performed using a cyan bath.

このようにして得られた部分銀メソ十の施されたり−r
フレームにはストライクメッキによるか、又は部分メッ
キ中に不要部分に付着又は析出した銀や銅が残っている
ので、これを本発明によって剥離する。すなわち、該リ
ードフレームを剥離液中に陽極として浸漬し、ステンレ
スからなる陰極との間に本発明に従って、第1図乃至第
4図に例示する如き矩形波、直流と矩形波電波電流との
併用又は直流と交流との併用による電流を流すことによ
って極めて有効に不必要部分の銀又は銅を溶解除去する
ことができる。本発明の使用する剥離用電流密度は05
〜4 A / dm 、矩形波又は交流の周期は6O−
10H2程度であることが望ましい。
The partial silver meso obtained in this way was applied -r
Since silver and copper deposited or deposited on unnecessary parts due to strike plating or during partial plating remain on the frame, this is removed by the present invention. That is, the lead frame is immersed as an anode in a stripping solution, and between it and a cathode made of stainless steel, according to the present invention, a combination of rectangular wave, direct current, and rectangular wave radio current as illustrated in FIGS. 1 to 4 is applied. Alternatively, unnecessary portions of silver or copper can be dissolved and removed extremely effectively by passing a current using a combination of direct current and alternating current. The current density for stripping used in the present invention is 05
~4 A/dm, the period of square wave or alternating current is 6O-
It is desirable that it be about 10H2.

剥離液としては一般にKONの水溶、液が用いられる。As the stripping solution, an aqueous solution or liquid of KON is generally used.

以下、本発明の実施例によって説明する。The present invention will be explained below using examples.

実施例1 リン青銅からなるリードフレーム基体を脱脂、酸洗等の
前処理を行った後に、全面に銅ストライクメッキを0.
05μの厚さに設け、次いで機械マスクを用いて部分的
に光沢銀メッキを3μ厚に設けた。
Example 1 A lead frame base made of phosphor bronze was subjected to pretreatment such as degreasing and pickling, and then copper strike plating was applied to the entire surface at 0.000.
0.05μ thick and then partially coated with bright silver plating to 3μ thickness using a mechanical mask.

かくして得られたり−Fフレームを陽極としてKON 
20 g/zの水溶液よりなる剥離液中で第1図に示す
波形の矩形波電流又は第2図に示す如き交流と直流を重
畳した波形の電流にて周期的に電解し、銀メッキの溶解
量と銀メツキ面の外観を判定して第1表に示した。なお
、比較例として、直流電源を用いた場合の結果も同様に
示した。また、この例における陽極溶解の際の′平均の
陽極電流密度は1(Vdm2)であった。
Thus obtained - KON with F frame as anode
The silver plating is dissolved by periodic electrolysis in a stripping solution consisting of an aqueous solution of 20 g/z using a rectangular wave current with the waveform shown in Figure 1 or a current with a waveform of superimposed alternating current and direct current as shown in Figure 2. The amount and appearance of the silver-plated surface were determined and shown in Table 1. Note that, as a comparative example, results using a DC power source are also shown in the same manner. Further, the average anode current density during anodic melting in this example was 1 (Vdm2).

第  1  表 判定 ○;光沢あり均一 △:光沢はないが均一×:光
沢なくむらあり 以上の結果から、本発明により剥離電解の際に電流を、
上記のように特殊波形で周期的に変えて剥離を行うこと
により、少ない銀の溶解量で外観の良いリードフレーム
が得られることがわかる。
Table 1 Judgment ○: Glossy and uniform △: Not glossy but uniform ×: Glossy and uneven From the above results, the current during peeling electrolysis according to the present invention
It can be seen that by performing peeling by periodically changing the special waveform as described above, a lead frame with a good appearance can be obtained with a small amount of dissolved silver.

実施例2 リン青銅からなるリードフレーム基体に脱脂、酸洗等の
前処理を行った後に、基体全面にNiメッキを2μ厚に
行った。次いで密着力を向上させるために全面に銀スト
ライクメッキを0.05μ 厚に設けた後に、実施例1
と同様に部分的に光沢銀メツキを3μ厚に設けてり−P
フレームを準備1〜だ。
Example 2 After a lead frame base made of phosphor bronze was subjected to pretreatment such as degreasing and pickling, Ni plating was applied to the entire surface of the base to a thickness of 2 μm. Next, in order to improve adhesion, silver strike plating was applied to the entire surface to a thickness of 0.05μ, and then Example 1 was applied.
In the same way as above, some parts are plated with glossy silver to a thickness of 3μ.-P
Prepare the frame 1.

次いで、不要部分に付着している銀を剥離するために実
施例1と同様の剥離液中で実施例と同じ波形の電流を用
いリードフレームを陽極として剥離電解を行った。この
時の銀の溶解量と銀メッキの外観を第2表に示した。
Next, in order to peel off the silver adhering to unnecessary parts, stripping electrolysis was carried out in the same stripping solution as in Example 1 using a current with the same waveform as in the example and using the lead frame as an anode. Table 2 shows the amount of silver dissolved and the appearance of the silver plating at this time.

第  2  表 判定は第1表と同様 以上の結果から、銀ストライクメツキ層を剥離する場合
にも、少ない銀の溶解量で外観の良い部分銀メッキが得
られることがわかる。
The judgment in Table 2 is the same as in Table 1. From the above results, it can be seen that even when the silver strike plating layer is peeled off, partial silver plating with a good appearance can be obtained with a small amount of dissolved silver.

実施例3 この実施例は本発明を銅の剥゛離に応用した場合を示す
Example 3 This example shows the application of the present invention to copper stripping.

Fe −42%N’i合金からなるリードフレーム基体
に脱脂、酸洗等の前処理を行った後、銅ストライクメッ
キを005μ 厚に設け、次いで実施例1と同様に部分
的に3μ厚の光沢銀メッキを設け、リードフレームを準
備]7た。
After performing pretreatment such as degreasing and pickling on the lead frame base made of Fe-42%N'i alloy, copper strike plating was applied to a thickness of 0.005μ, and then, as in Example 1, a glossy plate of 3μ was partially applied. Provide silver plating and prepare lead frame]7.

このリードフレームの不要部分の銅を剥離するためにK
ON 20 g/I!の水溶液よりなる剥離液中でソー
1フレームを陽極とし、実施例1と同様な波形の電流で
剥離電解を行った。この場合の銀の溶解量と銀メッキの
外観を第3表に示しプζ。
In order to peel off the copper from unnecessary parts of this lead frame,
ON 20 g/I! Stripping electrolysis was carried out in a stripping solution consisting of an aqueous solution using the saw 1 frame as an anode and a current having the same waveform as in Example 1. Table 3 shows the amount of silver dissolved and the appearance of silver plating in this case.

第  3  表 判定は第1表と同様 この結果から、Fe −Ni等の鉄系材料に設けた銅ス
トライク層を剥離する場合にも本発明が有効であること
がわかる。すなわち、本発明は銀の剥離以外に銅の剥離
にも応用することが可能である。
The results in Table 3 are similar to those in Table 1, and it can be seen from this result that the present invention is effective also when peeling off a copper strike layer provided on an iron-based material such as Fe--Ni. That is, the present invention can be applied not only to silver peeling but also to copper peeling.

以上の実施例においては、本発明に用いる電流の波形と
して第1図及び第2図に例示する正の波形のものを用い
だが、第3図に′示すような正負の矩形波や第4図に示
すような正負の直流と交流の畳重波の電流も用いること
ができる。
In the above embodiments, the positive waveforms illustrated in FIGS. 1 and 2 were used as the current waveforms used in the present invention, but positive and negative rectangular waves as shown in FIG. It is also possible to use current in the form of a superimposed wave of positive and negative direct current and alternating current as shown in FIG.

本発明により、少ない銀の溶解量で外観の良い部分銀メ
ツキリードフレームが得られるために、銀メッキの際の
調厚を薄くすることができ、リードフレームのコストを
下けることができる。また、溶解量が少なくてよいだめ
に剥離時間が短かくなり作業性を向上させることができ
る。
According to the present invention, a partially silver-plated lead frame with a good appearance can be obtained with a small amount of dissolved silver, so that the thickness adjustment during silver plating can be made thinner, and the cost of the lead frame can be reduced. Furthermore, since the amount of dissolution is small, the peeling time is shortened and workability can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図乃至第4図は本発明に用いられる剥離電解用電流
の波形の種々の態様を示す波形図である。 算 1(21 算2回 路3目 第412]
1 to 4 are waveform diagrams showing various aspects of the waveform of the current for stripping electrolysis used in the present invention. Arithmetic 1 (21 Arithmetic 2 circuit 3rd 412th)

Claims (1)

【特許請求の範囲】[Claims] (1)銅、銅合金、又はpe−Ni合金を導体とする表
面に電気メッキにより銀を部分的に設けた後に、置換析
出又はストライクメッキにより該導体の不要部分に付着
している銀を陽極処理して剥離する半導体用部分銀リー
ドフレームの製造方法において、剥離する際の陽極処理
を矩形波電流、直流と矩形波電流との併用又は直流と交
流との併用によって行うことを特徴とする部分銀り−P
フレームの製造方法。
(1) After partially depositing silver on the surface of copper, copper alloy, or PE-Ni alloy as a conductor by electroplating, the silver adhering to unnecessary parts of the conductor is anodized by displacement deposition or strike plating. A method for manufacturing a partial silver lead frame for semiconductors that is processed and peeled off, characterized in that anodization during peeling is performed using a rectangular wave current, a combination of a direct current and a rectangular wave current, or a combination of a direct current and an alternating current. Ginri-P
How the frame is manufactured.
JP10197583A 1983-06-08 1983-06-08 Method of producing partial silver lead frame Pending JPS59228315A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10197583A JPS59228315A (en) 1983-06-08 1983-06-08 Method of producing partial silver lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10197583A JPS59228315A (en) 1983-06-08 1983-06-08 Method of producing partial silver lead frame

Publications (1)

Publication Number Publication Date
JPS59228315A true JPS59228315A (en) 1984-12-21

Family

ID=14314861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10197583A Pending JPS59228315A (en) 1983-06-08 1983-06-08 Method of producing partial silver lead frame

Country Status (1)

Country Link
JP (1) JPS59228315A (en)

Similar Documents

Publication Publication Date Title
KR100407732B1 (en) Composite foil containing nodular copper / nickel alloy coating, printed circuit board containing it and method of electrodeposition of nodular copper / nickel alloy coating
JPH08250865A (en) Method for improving further reliability of electronic housing by preventing formation of metallic whisker on sheetutilized for manufacture of the electronic housing
US5322975A (en) Universal carrier supported thin copper line
US4431707A (en) Plating anodized aluminum substrates
US3454376A (en) Metal composite and method of making same
US5098534A (en) Composition and method for electrolytically stripping silver
US4549941A (en) Electrochemical surface preparation for improving the adhesive properties of metallic surfaces
US7270734B1 (en) Near neutral pH cleaning/activation process to reduce surface oxides on metal surfaces prior to electroplating
US3515650A (en) Method of electroplating nickel on an aluminum article
JP2007254866A (en) Plating pretreatment method for aluminum or aluminum alloy raw material
JPS60211097A (en) Electrochemical and chemical coating method of niobium
US4082622A (en) Electrodeposition of ruthenium
US4552627A (en) Preparation for improving the adhesion properties of metal foils
US2966448A (en) Methods of electroplating aluminum and alloys thereof
JPS59228315A (en) Method of producing partial silver lead frame
JPS6187894A (en) Method for plating titanium blank
JPS5921392B2 (en) Manufacturing method of copper foil for printed circuits
US4077852A (en) Selective gold plating
US3075894A (en) Method of electroplating on aluminum surfaces
SU796250A1 (en) Method of electrolytical precipitation on metallic articles
JPS627280B2 (en)
JPS60138090A (en) Partial silver plating method
JPH0260759B2 (en)
US2918415A (en) Antimony plating process
KR100603428B1 (en) Method for manufacturing black surface-treated copper foil for EMI Shield