JPS59225533A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS59225533A
JPS59225533A JP58100385A JP10038583A JPS59225533A JP S59225533 A JPS59225533 A JP S59225533A JP 58100385 A JP58100385 A JP 58100385A JP 10038583 A JP10038583 A JP 10038583A JP S59225533 A JPS59225533 A JP S59225533A
Authority
JP
Japan
Prior art keywords
resin
nozzle
raised
cut
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58100385A
Other languages
Japanese (ja)
Inventor
Noboru Sato
登 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58100385A priority Critical patent/JPS59225533A/en
Publication of JPS59225533A publication Critical patent/JPS59225533A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

PURPOSE:To lessen the dispersion of the amount of resin coating by stabilizing the position of the cut of resin stringing by a method wherein the up-down movement of a nozzle is controlled, when a semiconductor pellet and a wiring wire on a lead frame are coated with a very small amount of resin. CONSTITUTION:The nozzle 11 is lowered and then a fixed amount of the resin 15 is sprayed (Fig. a) out of its tip onto the semiconductor pellet 13 and the wiring wire 14 on the lead frame 12. Thereafter, the nozzle 11 is raised to a position before the position of the cut of the stringing part 15a of the resin 15 as shown in Fig. (b), when the nozzle 11 is stopped momentarily. When the resin at the stringing part 15 moves slightly downward at the time of the stop of this nozzle 11, it is raised again as shown in Fig. (c), thus cutting the part 15a. Thereby, as shown in Fig. (d), the resin 15 coating to the pellet 13 and the wire 14 is completed.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は半導体装置の製造方法に係シ、特にノズルに
よりリードフレーム上の半導体ペレット及び配線ワイヤ
上に順次微量の樹脂を塗布する半導体装置の組立工程の
改良に関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for manufacturing a semiconductor device, and in particular to a method for assembling a semiconductor device in which a minute amount of resin is sequentially applied onto semiconductor pellets and wiring wires on a lead frame using a nozzle. Regarding process improvement.

〔発明の技術的背景〕[Technical background of the invention]

一般に、半導体装置の組立工程においては、リードフレ
ーム上に固着された半導体ペレット及び配線ワイヤの保
模膜として、又、ＬＥＤ（Ｌｉｇｈｔ　Ｅｍｉｔｔｉｎ
ｇ　Ｄｉｏｄｅ　）ペレットのレンズ効果のために、樹
脂が塗布される。Generally, in the assembly process of semiconductor devices, LED (Light Emitting) is used as a protective film for semiconductor pellets and wiring wires fixed on a lead frame.
g Diode) Resin is applied for the lens effect of the pellets.

従来、このような樹脂の塗布は例えば第１図（荀〜（ｃ
）に示すように行われている。すなわち、先ず、第１図
（、）に示すように、ノズル１を下降させ、その先端よ
シリードフレーム２上の半導体ペレット３及び配線ワイ
ヤ４の上に定量の樹脂５を吐出する。その後、ノズル１
を第１図（ｂ）に示すように樹脂５の糸引き部５ａが切
れる位置まで上昇させる。そして、この樹脂５の糸引き
部５ａが第１図（ｃ）に示すように切れると、樹脂５の
塗布工程が完了する。取量、同様の動作を繰シ返すもの
である。Conventionally, such resin application has been carried out, for example, as shown in Fig. 1 (Xun ~ (c
). That is, first, as shown in FIG. 1(,), the nozzle 1 is lowered, and a fixed amount of the resin 5 is discharged from its tip onto the semiconductor pellet 3 and wiring wire 4 on the series lead frame 2. Then nozzle 1
is raised to a position where the threaded portion 5a of the resin 5 is cut, as shown in FIG. 1(b). When the threaded portion 5a of the resin 5 is cut as shown in FIG. 1(c), the process of applying the resin 5 is completed. This involves repeating the same actions over and over again.

〔背景技術の問題点〕[Problems with background technology]

このように従来の樹脂５の塗布工・程においては、ノズ
ル１を上昇させる際に樹脂５の粘度によυ、吐出した樹
脂５がノズル１の上昇と共に持ち帰られる一所甜糸引き
が起る。この糸引き部５ａは、ノズル１をある高さまで
上げると切れるが、ノズル１を糸引き部５ａが切れる位
置まで一度に上昇させると、切れる位置が第１図（ｂ）
にＡ、Ｂ、Ｃに示すようにまちまちになる。In this way, in the conventional resin 5 coating process, when the nozzle 1 is raised, depending on the viscosity of the resin 5, the discharged resin 5 is brought back as the nozzle 1 is raised, causing stringiness in some places. . This string pulling part 5a can be cut by raising the nozzle 1 to a certain height, but if the nozzle 1 is raised all at once to the position where the string pulling part 5a can be cut, the cutting position will be as shown in Fig. 1(b).
The results will vary as shown in A, B, and C.

その結果、半導体ペレット３及び配線ワイヤ４側に塗布
される樹脂５の量も大きくばらついてしまう。また、ノ
ズル１を上昇させた際半導体ペレット３及び配線ワイヤ
４側の樹脂５の付き具合が異なると、塗布量が変化し、
ばらつきの原因となる３、 〔発明の目的〕 この発明は上記実情に鑑みてなされたもので、その目的
は、リードフレーム上の半導体ペレット及び配線ワイヤ
に＠：ｆｆｌ：の樹脂を塗布する際に、樹脂の糸引き部
の切れる１位置を安定化させ、樹脂塗布量のばらつきを
減少させることのできる半導体装置の製造方法を提供す
ることにある。As a result, the amount of resin 5 applied to the semiconductor pellet 3 and wiring wire 4 side also varies greatly. Moreover, if the degree of adhesion of the resin 5 on the semiconductor pellet 3 and wiring wire 4 side differs when the nozzle 1 is raised, the amount of application will change,
3. [Object of the Invention] This invention was made in view of the above-mentioned circumstances, and its purpose is to reduce Another object of the present invention is to provide a method for manufacturing a semiconductor device that can stabilize one position where a stringy portion of resin breaks and reduce variations in the amount of resin applied.

〔発明の概要〕[Summary of the invention]

この発明は、ノズルによりリードフレーム上の半導体ペ
レット及び配線ワイヤの上に樹脂を塗布する半導体装置
の組立工程において、前記ノズルにより前記半導体ペレ
ット及び配線ワイヤ上に樹脂を吐出した後、前記ノズル
を上昇させ、前記樹脂の糸引き部が切れる手前で前記ノ
ズルを一時停止させ、前記糸引き部の樹脂が下方に少し
移動した後、再度前記ノズルを上昇させ、前記糸引き部
を切ることにより、前記糸引き部の切れる位置を一定化
して樹脂塗布量を安定化させるもの−である。This invention provides a method for assembling a semiconductor device in which a nozzle applies resin onto semiconductor pellets and wiring wires on a lead frame, and after the nozzle discharges the resin onto the semiconductor pellets and wiring wires, the nozzle is moved upward. The nozzle is temporarily stopped before the thread-pulling part of the resin is cut, and after the resin in the thread-pulling part moves downward a little, the nozzle is raised again and the thread-pulling part is cut. This is to stabilize the amount of resin applied by making the cutting position of the threaded part constant.

〔発明の実施例〕[Embodiments of the invention]

以下図面を参照してこの発明の一実施例を説明する。先
ず、第２図（ａ）に示すようにノズル１１を下降させ、
その先端よシリードフレーム１２上の半導体ペレット１
３及び配線ワイヤ１４の上に定量の樹脂１５を吐出する
。その後、ノズル１１を上昇させ、第２図（ｂ）に示す
ように樹脂１５の糸引き部１５ａｆｉ切れる位置の手前
の位置になると、ノズル１ノを一時停止させる。An embodiment of the present invention will be described below with reference to the drawings. First, as shown in FIG. 2(a), the nozzle 11 is lowered,
Semiconductor pellet 1 on the series lead frame 12 from its tip
3 and the wiring wire 14 in a fixed amount. Thereafter, the nozzle 11 is raised, and when the nozzle 11 reaches a position just before the position where the threaded portion 15afi of the resin 15 breaks as shown in FIG. 2(b), the nozzle 1 is temporarily stopped.

このノズル１１の停止位置は、樹脂１５の粘度及び塗布
シによシ異なるが、例えば半導体ペレット１３の表面よ
り約１０ｍの位置とする。しかして、このノズル１１の
停止時に糸引き部１５ａの樹脂が下方に少し移動すると
、第２図（ｃ）に示すように再度ノズル１１を上昇させ
、糸引き部１５ａを切る。これによシ、第２図（ｄ）に
示すように、半導体ペレット１３及び配線ワイヤ１４へ
の樹脂１５の塗布が完了する。以下、同様の動作を繰９
返すものである。The stopping position of this nozzle 11 varies depending on the viscosity of the resin 15 and the application method, but is set to a position approximately 10 m from the surface of the semiconductor pellet 13, for example. When the nozzle 11 is stopped and the resin in the threaded part 15a moves downward a little, the nozzle 11 is raised again to cut the threaded part 15a as shown in FIG. 2(c). Thereby, as shown in FIG. 2(d), the application of the resin 15 to the semiconductor pellet 13 and the wiring wire 14 is completed. Below, repeat the same operation.
It is something to give back.

上記工程においては、樹脂１５の糸引き部１５ａが切れ
る手前の位置で、ノズル１１を一時停止させた後、再°
度ノズル１ノを上昇させるようにしているので、糸引き
部１５ａの切れる位置が第２図（ｃ）　Ｋ　Ｄで示すよ
うに一定化する。In the above process, the nozzle 11 is temporarily stopped at a position before the threaded portion 15a of the resin 15 is cut, and then the nozzle 11 is restarted.
Since the nozzle 1 is raised at the same time, the position where the thread pulling portion 15a breaks becomes constant as shown by KD in FIG. 2(c).

また、ノズル１１を一時停止させた際、樹脂１５が下方
に移動するため、半導体ペレット１３及び配線ワイヤ１
４への付着面積が太きくなシ塗布量が多くなる。これに
伴い、ノズル１１側に持ち帰られる樹脂１５の量が少な
くなり、このため糸引き部１５＆の形状が安定化する。Further, when the nozzle 11 is temporarily stopped, the resin 15 moves downward, so that the semiconductor pellet 13 and the wiring wire 1
Since the adhesion area to No. 4 is large, the amount of coating is increased. Accordingly, the amount of resin 15 brought back to the nozzle 11 side is reduced, and therefore the shape of the threaded portion 15& is stabilized.

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明によれば、リードフレーム上の半
導体ペレット及び配線ワイヤに樹脂を塗布する工程にお
いて、樹脂の糸引き部の切れる位置を一定にし、塗布輯
脂掘−のばらつきを減少させることができるため、樹脂
量が微量であっても安定した塗布を行うことができる。As described above, according to the present invention, in the process of applying resin to semiconductor pellets and wiring wires on a lead frame, the position at which the threaded part of the resin breaks is made constant, and variations in coating thickness are reduced. Therefore, stable coating can be performed even if the amount of resin is small.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の樹脂塗布上′程を示す構成図、第２図は
この発明の一実施例に係る樹脂塗布工程を示す構成図で
ある。 １ノ・・・ノズル、１２・・・リードフレーム、１３・
・・半導体ペレット、１４・・・配線ワイヤ、１５・・
・樹脂、１５＆・・・糸引き部。 出願人代理人　　弁理士　鈴　江　武　彦第２図 （ａ）　　　　　　　（ｂ） □゛ 第２図 （ｄ）FIG. 1 is a block diagram showing a conventional resin coating process, and FIG. 2 is a block diagram showing a resin coating process according to an embodiment of the present invention. 1 nozzle, 12... lead frame, 13...
...Semiconductor pellet, 14...Wiring wire, 15...
・Resin, 15 &... thread pulling part. Applicant's representative Patent attorney Takehiko Suzue Figure 2 (a) (b) □゛Figure 2 (d)

Claims (1)

【特許請求の範囲】[Claims] ノズル、によシリードフレーム上の半導体ペレット及び
配線ワ・イヤの上に順次樹脂を塗布する半導体装置の組
立工程において、前記ノズルによシ前記半導体ペレット
及び°配線ワイヤ上に樹脂を吐出じた後、前記ノズルを
上昇させ、前記樹脂の糸引き部が切れる手前で前記ノズ
ルを一時停止させ、前記糸引き部の樹脂が下方に少し移
動した後、再度前記ノズルを上昇させることによシ、前
記糸引き部を切ることを特徴とする半導体装置の製造方
法。In a semiconductor device assembly process in which a nozzle sequentially applies resin onto semiconductor pellets and wiring wires on a lead frame, the nozzle discharges resin onto the semiconductor pellets and wiring wires. After that, the nozzle is raised, the nozzle is temporarily stopped just before the stringy part of the resin is cut, and after the resin in the threaded part moves downward a little, the nozzle is raised again. A method for manufacturing a semiconductor device, comprising cutting the threaded portion.
JP58100385A 1983-06-06 1983-06-06 Manufacture of semiconductor device Pending JPS59225533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58100385A JPS59225533A (en) 1983-06-06 1983-06-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58100385A JPS59225533A (en) 1983-06-06 1983-06-06 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS59225533A true JPS59225533A (en) 1984-12-18

Family

ID=14272540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58100385A Pending JPS59225533A (en) 1983-06-06 1983-06-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS59225533A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63111969A (en) * 1986-10-28 1988-05-17 Matsushita Electric Ind Co Ltd Method for coating resin to very small winding part
JPH06343912A (en) * 1993-06-10 1994-12-20 Seikosha Co Ltd Driving of dispenser
JP2008034443A (en) * 2006-07-26 2008-02-14 Sharp Corp Resin coating method, and optical semiconductor device
JP2011249829A (en) * 2011-07-20 2011-12-08 Mitsubishi Chemicals Corp White light-emitting element
WO2012147611A1 (en) * 2011-04-26 2012-11-01 サンユレック株式会社 Method and apparatus for manufacturing optical device
EP3534416A1 (en) * 2018-02-28 2019-09-04 Nichia Corporation Method of manifacturing light emitting device and light emitting device
JP2019153785A (en) * 2018-02-28 2019-09-12 日亜化学工業株式会社 Light emitting device manufacturing method and light emitting device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63111969A (en) * 1986-10-28 1988-05-17 Matsushita Electric Ind Co Ltd Method for coating resin to very small winding part
JPH06343912A (en) * 1993-06-10 1994-12-20 Seikosha Co Ltd Driving of dispenser
JP2008034443A (en) * 2006-07-26 2008-02-14 Sharp Corp Resin coating method, and optical semiconductor device
US9373730B2 (en) 2011-04-26 2016-06-21 Sanyu Rec Co., Ltd. Method and apparatus for manufacturing optical device
WO2012147611A1 (en) * 2011-04-26 2012-11-01 サンユレック株式会社 Method and apparatus for manufacturing optical device
EP2704220A1 (en) * 2011-04-26 2014-03-05 Sanyu Rec Co., Ltd. Method and apparatus for manufacturing optical device
KR20140030192A (en) * 2011-04-26 2014-03-11 산유 레크 가부시키가이샤 Method and apparatus for manufacturing optical device
JPWO2012147611A1 (en) * 2011-04-26 2014-07-28 サンユレック株式会社 Opto device manufacturing method and manufacturing apparatus
EP2704220A4 (en) * 2011-04-26 2014-10-29 Sanyu Rec Co Ltd Method and apparatus for manufacturing optical device
US10050158B2 (en) 2011-04-26 2018-08-14 Sanyu Rec Co., Ltd. Method and apparatus for manufacturing optical device
JP2011249829A (en) * 2011-07-20 2011-12-08 Mitsubishi Chemicals Corp White light-emitting element
EP3534416A1 (en) * 2018-02-28 2019-09-04 Nichia Corporation Method of manifacturing light emitting device and light emitting device
JP2019153785A (en) * 2018-02-28 2019-09-12 日亜化学工業株式会社 Light emitting device manufacturing method and light emitting device

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