JPS5922052A - Electrophotographic receptor - Google Patents

Abstract

PURPOSE:To obtain an electrophotographic receptor superior in photosensitivity, etc., by forming an amorphous silicon hydride layer contg. a specified amt. of oxygen as a charge transfer layer and an amorphous silicon hydride layer as a charge generating layer on a conductive substrate. CONSTITUTION:An amorphous silicon hydride layer contg. 0.1-40 atomic% O is formed as a charge transfer layer on the conductive substrate 1 by glow discharging in SiH4, Si2H6 or the like contg. 1.0-6.0vol% O2. Then, an amorphous silicon hydride layer is formed on it as a charge generating layer 3 by glow discharging in gaseous silane alone without adding O2. As a result, the obtained electrophotographic receptor is superior in charging characteristics and photosensitivity, and high in deposition speed during the formation of the layer 2.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an electrophotographic photoreceptor, and more particularly to an electrophotographic photoreceptor having good dark resistance and excellent photosensitivity characteristics.

[Technical background of the invention and its problems]

Conventionally, the photosensitive materials used in electrophotographic photoreceptors include:
For example, amorphous selenium (a-8e), cadmium sulfide (CdS), or selenium-tellurium (Se-Te)
Inorganic materials such as PVC-N-vinylcarbazole (PVCz) and trinitrofluorenone (TNF) are known. However, various problems remain when using these photosensitive materials. That is, among the above-mentioned photosensitive materials, inorganic materials are extremely toxic and therefore have the problem of requiring special precautions for human body safety when producing them. In addition, electrophotographic photoreceptors manufactured using inorganic materials have poor thermal stability of 75 hours, and fourth, the mechanical strength of the photoreceptor is weak. The reality is that it is used at the expense of some of the characteristics of the system.

In addition, organic materials such as PVCz and TNF mentioned above have excellent thermal stability and abrasion resistance because they are organic materials, and therefore have a product life of 4 Hz. .

On the other hand, in recent years, amorphous hydrogenated silicone (hereinafter referred to as a-S
It is called iH. )7 is attracting attention as a photosensitive material for electrophotographic photoreceptors. This a-8iH has excellent performance in terms of environmental contamination resistance, heat resistance, abrasion resistance, and photosensitive characteristics, as compared to the conventional photosensitive materials described above.

However, using this a-8t)I electrophotographic photoreceptor f, -12, +lij using the usual glow j:z t4 decomposition method, 'il+! In the crushed 14 cases, the maximum dark resistance C could not be obtained with a value of more than 10I0Ω, and there was one point in between that the specified surface potential could not be obtained on the corona-charged table. ing. fllE is this a-8I
An electrophotographic scintillator using H has not yet been put into practical use.

In order to improve the dark resistance of this a-8IH photoreceptor to about 1011Ω1, boron (H) was added by adding X.1 to a-8iH.
Total 20~20'''Oppm 1>, or oxygen (0)
etc., with an atomic coefficient of 0.1 to 30 is described, for example, in Japanese Patent Application Laid-Open No. 54-86341 and Japanese Patent Application Laid-open No. 54-1.
It is disclosed in Publication No. 45539.

However, the effect of boron addition on the dark resistance of a-8IH is extremely small and does not result in a significant improvement.

- When oxygen is added to B-8iI, the dark resistance improves, but as the oxygen content of the photoreceptor increases, the light resistance increases
This eliminates the problem of reduced sound intensity characteristics.

Furthermore, the optical absorption edge (E
However, compared to that of the a-8iH photoreceptor, it has a problem in that its function as a long wavelength photoreceptor is significantly impaired.

Furthermore, Japanese Patent Application Laid-Open No. 56-156834 discloses that it is effective to dope a-SiH with an acid in order to obtain a 1111 resistance of about 1013 Ωα or more required for an electrophotographic photoreceptor. It has been small. Among them, a-8
Oxygen [7) doping lij for iH is about 10-'
It is stated that the range of 5 X I F2 atomic candy is suitable. However, the above acid tree Dofu'
Although the a-8ijl photoreceptor has good dark resistance, it is not suitable for industrial production because of the slow deposition rate during its manufacture. are doing.

[Purpose of the invention]

The purpose of this book is to solve the above-mentioned problems, to have a dark resistance that is high enough to obtain an s-plane potential, and to have light sensitivity characteristics, especially ( 1. To provide a high quality electrophotographic photoreceptor.

[Summary of the invention]

The electrophotographic photoreceptor of the present invention comprises a 7M supporting substrate and a charge transport layer comprising an amorphous silicon hydride layer provided on the substrate and containing 0.1 to 40 atoms of oxygen. It is characterized in that +H(4) is formed by the charge generation layer consisting of 1 and 1.

In the following, the invention will be explained in more detail.

The amorphous hydrogenated silicon layer according to the present invention and the oxygen-doped amorphous hydrogenated silicon layer (hereinafter referred to as a-8iT
I: Referred to as 0 layer. ) is shown in the drawing.

In the drawings, a conductive support substrate 1 is laminated with an acid-doped amorphous hydrogenated silicon layer 2 and an amorphous hydrogenated silicon layer 3.

a-8i) formed on a supporting substrate according to the present invention;
(The :0 layer functions as a charge transport layer.The J・'A has an extremely high deposition rate due to the increased doping of !1 silicon to one a-8i, and retains the corona charge. is more than 1%. That is, a-8iH and 1
Since oxygen is deposited on the supporting substrate at 1 mm, the deposition rate is 2 mm.
．． The speed has been increased to 0 to 6゜Oμ/I (about 0 to 6゜Oμ/I), and the dark resistance has a value of about 10''l to 10140㎜, which is required for charging. The thickness of such a-8iH:0 layer is preferably 5μ to 1-00μ, most preferably 10μ to Iμ.Also, oxygen doping)
Must be in charge of 0.1~411 atoms):
, and preferably has a ratio of 1.0 to 20 atoms. When the oxygen doping amount is 0.1 atoms, the dark resistance of the a-8iH layer becomes 10'0.
．． 0 cm or less, while 40 atomic%, t<
4, the transportability of f-loaded cargo will be extremely reduced.

Above a-8IH: a-8i[(J
li3 functions primarily as a charge generation layer. The layer is a
-8iH: Compensates for the decrease in photosensitivity in the long wavelength region due to the 0 layer, and improves the photosensitivity characteristics of the E1°C photoreceptor.

The thickness of such a-8iH layer is preferably 0.1 μ to 10 μ, more preferably 1 μ to 5 μ.

The conductive support substrate used in the present invention is not particularly limited, but includes, for example, glass, stainless steel, aluminum, or ITO (Indium Tinoxy).
It is possible to use a material coated with a dθ) film, etc., and the shape thereof may be any of a film, a sheet, a drum, an R-rut, etc.

The electrophotographic photoreceptor of the present invention can be manufactured, for example, as follows.

That is, the a-8iH layer and the a-8iHS 0 layer are formed by decomposing silane gas (SiH4) by a conventional high-frequency glow discharge decomposition method, or by adding oxygen + JFl.
The 5lik gas is decomposed and deposited on the conductive supporting substrate (7, +4'). Preferably trF: 100°C to 250"C. Also, as a high 1 wave power source, I MHz to 50"C.
It is preferable to use a radio wave of 13.56 MHz, particularly preferably one of 13.56 MHz.Then, it is preferable to apply a power density of IOW to IKW between '+t4it1 for gas decomposition. .

A-8iH: Examples of the raw material gas used when forming the 0 layer include silane gas (Si&) containing oxygen gas, sosilane gas (Sid(a)), etc.; It is preferable to use a silane gas containing 0.1 to 40 atomic coefficients of oxygen in the silane gas. It is preferably .5 to 12.0 rest, more preferably 1.0 to 5.0 rest.

When forming a-st, rI layer, write a-8I in -
In the formation of the H:0 layer, it is only necessary to stop the supply of the C:y element gas, and it is possible to stack the a-S iII layer with one composition of the a-8iH:O layer.

Glow, a-8i released from 141j by the free decomposition method
HU'? As mentioned above, its dark resistance is less than 10" Ω steel even at ++, and in general, in order to be applied to an electrophotographic photoreceptor that requires a dark resistance of about 101 s Ω or more. It is known that it is sufficient to dope oxygen by about 10-' to 5 x 10-2 atomic%.The present inventors further increased the doping bone of 119 elements to a-8iH to obtain 0. .1 to 40 atoms,
4. It was found that a-8iH: 0 layer can be obtained with a fast deposition speed and excellent corona charge characteristics in a single layer.7
-However, since the above a-8+H:0 layer has an extremely large number of oxygen barrings, the number of 81-0 bonds increases.

As a result, the optical absorption edge of the a-8iII: 0 layer is a-
The 8iH layer shifts to a wavelength that is lower than that of the iH layer, and the photosensitivity in the long wavelength region becomes 11 (lower). The a-8iH layer with excellent retention properties is used as a 1-it charge transport layer, and the a-8iH layer with excellent photosensitivity characteristics is laminated as a charge generation layer.

〔Effect of the invention〕

The electrophotographic photoreceptor having the structure of the present invention includes a-8iH:
By using Oj- as a heavy transport layer, it has good dark resistance, and by stacking an a-8iH layer as a charge generation layer, it has excellent photosensitivity characteristics.

Furthermore, in its manufacture (in the case of a-8iH:0), due to the large amount of doping of 19 elements in the 0 layer, the deposition rate increases significantly to about 20 to 6.0 μ/H, and Manufacturing becomes "r fit:".

[Embodiments of the invention]

Example 1 Parallel plate type high frequency glow for one night: ITO film on one electrode of the main device ~? Corning 7 overturned
Q59 (manufactured by Dow Corning) glass substrates were stacked.

Once the inside of the apparatus was evacuated at I x 10-6'l'orrt, silane (SIT-L) gas and oxygen (07) gas were put into barrels and the gas pressure was adjusted to 8 x 10-'Torr. )''.The oxygen gas content in the mixed gas is 6.0
Ura so that the volume is φ.

Adjustments were made using a thigh and scale.

A glow discharge was caused by applying a high frequency wave of 1.3.56 MITy between the parallel plate electrodes with the glass substrate temperature set to 250'C with a heating stage.
5t) L and? 'j: 0, and the gas was supplied at an angle of 'r' to form an amorphous hydrogenated silicon layer containing oxygen on the substrate. The deposition rate at this time was 5^/sec, and the thickness was about 10μ.
'14 original thickness ψ:,) a-8iH as feeding layer: 0
The layer is 〒11.

Next, stop the supply of the cerium gas, continue the discharge by supplying only the silane gas, and a-8iH: 0!, Q
An amorphous hydrogenated silicon layer (,゛) containing no element (・ζ1) was layered on the top.The deposition r*4y at this time was IA/s.
ee and a-Fii as a charge generation layer with a thickness of about 2μ
l [Layers were laminated to obtain an electrophotographic photoreceptor.

When this 1, 1 & light body was exposed to the corona zone (i) at -6 KV, a front potential of 550 V was observed.Next, image exposure of 151 uz, sec was performed to form an electrostatic latent image, and then magnetic When the image was transferred to 1'4!L paper using a brush development method using a positive donor, a clear image with good contrast was obtained.

Example Using the same equipment path as that used in Example 1, an aluminum substrate (100 order x 100 intervals x 1
The substrate temperature was maintained at 200°C.

Into this device, a mixed gas of 7 runs/oxygen adjusted to a total volume ratio of 4.0 containing oxygen gas was introduced, and the gas pressure was adjusted to 0-I.
Torr was set at 1-11. 50 SCCM of gas flow
Then, a high frequency of 13.56 M and EIz of 100 W was applied between the parallel plate electrodes to cause glow discharge. The deposition rate at this time was 4 A/see, and about 12 μpl of amorphous hydrogenated silicon A containing hydrogen was deposited.

Next, the supply of oxygen gas is stopped, and only silane gas q) is supplied to perform Glossy! Nichi, continued. At this time, the aluminum crystallinity was raised to 250°C and the silane gas pressure was changed to 0.05 Torr. The deposition rate at this time was 1.2A/see, and a 3μ thick layer of oxygen was deposited):
(An electrophotographic photoreceptor was fabricated by laminating an amorphous hydrogenated silicon layer without any oxidation.)

When this photoreceptor was corona charged with a glass 7I (V), the surface potential +d was heated to 700 V.Next, the photoreceptor was irradiated with 201ux Haloke 9 lamp light, and when the photoreceptor was exposed to half light. When measured from 1 to 0.
A high photosensitivity of 51 ux and 8 ee was obtained, and it was confirmed that the electrophotographic photoreceptor was highly practical.

[Brief explanation of drawings]

The drawings are a new view of an electrophotographic photoreceptor according to the present invention. , 3...Amorphous hydrogenated silicon layer.

Claims (1)

[Claims] an electrically conductive supporting substrate; and an oxygen-containing substrate provided on the substrate.
Due to the charge transport layer consisting of an amorphous hydrogenated silicon layer containing 1 to 40 atoms and the charge generation layer consisting of an amorphous hydrogenated silicon layer! 'Characterized by being made'+1f;+1f;light photography