JPS592196B2 - Photo resist pattern formation method on thick film - Google Patents

Photo resist pattern formation method on thick film

Info

Publication number
JPS592196B2
JPS592196B2 JP11370379A JP11370379A JPS592196B2 JP S592196 B2 JPS592196 B2 JP S592196B2 JP 11370379 A JP11370379 A JP 11370379A JP 11370379 A JP11370379 A JP 11370379A JP S592196 B2 JPS592196 B2 JP S592196B2
Authority
JP
Japan
Prior art keywords
thick film
formation method
resist pattern
pattern formation
photo resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11370379A
Other languages
Japanese (ja)
Other versions
JPS5637697A (en
Inventor
生夫 富田
健郎 菅野
豊 渡辺
久康 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11370379A priority Critical patent/JPS592196B2/en
Publication of JPS5637697A publication Critical patent/JPS5637697A/en
Publication of JPS592196B2 publication Critical patent/JPS592196B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明はスクリーン印刷による厚膜上へのフォト・レジ
スト・パターン形成方法に関す、所謂スクリーン印刷に
よる厚膜技術は、高価且つ取扱いの困難な設備を要する
薄膜技術に比して、製作設備も簡単、且つ取扱いも容易
であるため、各種電子機器用回路部品・装置の製作に・
・イブリツド、ICを始め各種回路の配線パターン作成
に広く利用されている。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of forming photoresist patterns on thick films by screen printing, and the so-called thick film technology by screen printing is superior to thin film technology which requires expensive and difficult-to-handle equipment. As the manufacturing equipment is simple and easy to handle, it is suitable for manufacturing circuit parts and devices for various electronic devices.
・Widely used to create wiring patterns for various circuits including hybrids and ICs.

然しこの技術で製作される回路の最小パターン幅は、1
00〜200ミクロン程度が限度であるため、これよシ
細いパターン幅の回路生成には、スクリーン印刷された
厚膜ペーストを塗付乾燥させた表面にフォト・レジスト
を塗布し、パターン・マスクを介して露光・現像する所
謂フォト・レジスト技術を適用する方法が考えられた。
However, the minimum pattern width of the circuit manufactured using this technology is 1
The limit is about 0.00 to 200 microns, so to generate a circuit with a narrower pattern width, a screen-printed thick film paste is applied and dried, then a photoresist is applied to the surface, and a photoresist is applied through a pattern mask. A method of applying the so-called photoresist technology, which involves exposure and development, was considered.

この方法によつて、製作される回路パターン幅は一挙に
数品の一となわ、30〜40ミクロン程度に減少するこ
ととなつた。
By this method, the width of the circuit pattern produced was reduced to about 30 to 40 microns for several products at once.

然しながらこれ以上に減少させることは、極めて難しく
、本発明者の研究によれば、その原因がスクリーン印刷
により形成された厚膜表面が一見平滑のようで平滑でな
く、2〜5ミクロンの凹凸があるためと判明した。
However, it is extremely difficult to reduce the amount further than this, and according to the research of the present inventor, the reason for this is that the thick film surface formed by screen printing is not smooth at first glance, but has irregularities of 2 to 5 microns. It turned out that it was because of something.

この凹凸の生成はスクリーン印刷による以上、使用する
スクリーンの網目のため避けることはできず、従つてそ
の乾燥后表面に塗付されるフォトレジストの表面の凹凸
の生成も又不可能避であわ、その上にパターン・マスク
を密着させて露光しても、マスクとフォト・レジスト膜
との密着の度合が、部分的に異なるために、所謂切れの
よい回路パターンが得られなかつた。
As long as screen printing is used, the formation of this unevenness cannot be avoided due to the mesh of the screen used, and therefore the formation of unevenness on the surface of the photoresist applied to the surface after drying is also unavoidable. Even if a pattern mask was brought into close contact with the photoresist film and exposed, a so-called well-cut circuit pattern could not be obtained because the degree of contact between the mask and the photoresist film was partially different.

本発明はこの欠点を除去し、回路パターン幅を更に減少
させんとする方法を提供するもので、この目的はスクリ
ーン印刷によつて塗付した厚膜を乾燥后、その表面をブ
ラッシングすることにより、表面の凹凸の度合を減少さ
せ平滑化することによつて達成できる。
The present invention seeks to eliminate this drawback and to provide a method for further reducing the circuit pattern width, the purpose of which is to provide a method for further reducing the circuit pattern width by brushing the surface of the thick film applied by screen printing after drying. This can be achieved by reducing the degree of surface unevenness and smoothing the surface.

ブラッシングとしては、市販のサンド・ペーパーならば
、1500番以上の細いものを使用して、厚膜上を2〜
3回ブラッシングすることによつて、厚膜上の凹凸の度
合を半減することができる。
For brushing, if you are using commercially available sandpaper, use a thin piece of 1500 grit or higher, and rub it over the thick film for 2 to 2 minutes.
By brushing three times, the degree of unevenness on the thick film can be halved.

又上記サンド・ペーパーに代り、ブラッシング・シート
、例えば住友3M社製のスコツチ・ブライト、あるいは
市販のクリーニング・フラッシュ(20〜25ミクロン
径のガラス・ファイバーを多数束ねたフラッシュ)を使
用しても略同様の成果が得られた。以下硝子基板に微細
な配線パターンを形成させる本発明の1実施例について
説明する。
Also, instead of the sand paper mentioned above, a brushing sheet such as Scotchi Bright manufactured by Sumitomo 3M, or a commercially available cleaning flash (a flash made of a bundle of glass fibers with a diameter of 20 to 25 microns) may be used. Similar results were obtained. An embodiment of the present invention in which a fine wiring pattern is formed on a glass substrate will be described below.

硝子基板上にスクリーン印刷により、市販の導体ペース
ト(金、銀、金・白金等の貴金属粉末とガラス・フリツ
トを混合したものを有機バインダーに分散させたもの)
を均一に10数ミクロン厚さで塗付し70も〜150一
Cで15分乃至30分乾燥させ、その表面を既述のクリ
ーニング・ブラシユで数回ブラツシングする。
A commercially available conductive paste (a mixture of gold, silver, gold/platinum, etc. noble metal powder and glass frit dispersed in an organic binder) is made by screen printing on a glass substrate.
is applied uniformly to a thickness of 10-odd microns, dried at 70°C to 150°C for 15 to 30 minutes, and the surface is brushed several times with the cleaning brush described above.

このブラツシングにより、厚膜の表面凹凸の度合は1.
5〜3ミクロンに減少する。
This brushing reduces the degree of surface unevenness of the thick film to 1.
Reduced to 5-3 microns.

次いで公知技術によりその表面にPVA系フオト・レジ
ストを数ミクロン厚さに塗付し、パターン・マスクを密
着させ、露光、現像しクロロセンによるエツチングを施
し、焼成して完成する。
Next, a PVA-based photoresist is applied to the surface to a thickness of several microns using a known technique, a pattern mask is adhered to the surface, exposed, developed, etched with chlorocene, and completed by baking.

Claims (1)

【特許請求の範囲】[Claims] 1 基板上に厚膜ペーストを塗付乾燥させて後、その表
面をブラッシング処理により平滑化し、その上にフォト
・レジストを施すことを特徴とするスクリーン印刷によ
る厚膜上へのフォト・レジスト・パターン形成法。
1. A photoresist pattern on a thick film by screen printing, which is characterized by applying a thick film paste onto a substrate, drying it, smoothing the surface by brushing, and applying a photoresist thereon. Formation method.
JP11370379A 1979-09-05 1979-09-05 Photo resist pattern formation method on thick film Expired JPS592196B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11370379A JPS592196B2 (en) 1979-09-05 1979-09-05 Photo resist pattern formation method on thick film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11370379A JPS592196B2 (en) 1979-09-05 1979-09-05 Photo resist pattern formation method on thick film

Publications (2)

Publication Number Publication Date
JPS5637697A JPS5637697A (en) 1981-04-11
JPS592196B2 true JPS592196B2 (en) 1984-01-17

Family

ID=14619024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11370379A Expired JPS592196B2 (en) 1979-09-05 1979-09-05 Photo resist pattern formation method on thick film

Country Status (1)

Country Link
JP (1) JPS592196B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3733599B2 (en) * 1993-08-11 2006-01-11 住友化学株式会社 Metal oxide powder and method for producing the same

Also Published As

Publication number Publication date
JPS5637697A (en) 1981-04-11

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