JPS59208793A - Amorphous semiconductor device - Google Patents

Abstract

PURPOSE:To enable to use the resin film substrate without causing any peeling-off trouble of an amorphous semiconductor film or any deterioration of the film quality in an amorphous semiconductor device by a method wherein the device is formed into a constitution that the amorphous semiconductor film is coated on the resin film substrate involving fibers. CONSTITUTION:A resin film substrate 1 has involved a sheet-shaped core material 2, wherein worp threads 2a and weft threads 2b have been alternately knitted. A plural number of photoelectric conversion region 3a-3d have been juxtaposed on this substrate 1. These regions 3a-3d respectively have a laminated structure, wherein metal electrode layers 4a-4d divided from the substrate 1 side in each region, an amorphous semiconductor film 5 continuously stretching over each region and transparent electrode layers 6a-6d divided in each region have been laminated in order. When the substrate 1 involving fibers in such a way as mentioned above is compared with that no involving fibers, the linear expansion coefficient has become lower. As a result, the linear expansion coefficient difference between the substrate 1 and the film 5 is reduced and the stripping trouble of the film 5 can be prevented, and, at the same time, the covered temperature of the film 5 can be risen, thereby enabling to obtain a semiconductor film of good quality.

Description

DETAILED DESCRIPTION OF THE INVENTION B) Industrial Application Field The present invention relates to an amorphous semiconductor device equipped with a film substrate.

(b) Prior art Amorphous semiconductors based on amorphous silicon, which can be formed by glow discharge in an atmosphere of silicone compounds such as silane (SiH4), are attracting attention as new semiconductor materials, and are currently used in optical devices such as photovoltaic devices and optical sensors. It has been put into practical use as active devices such as thin film transistors.

Normally, amorphous semiconductors are thin, with a film thickness of several tens of micrometers or less, for example, about 4,000 to 11 meters for photovoltaic devices, and therefore require some kind of supporting substrate. As is well known, for an amorphous silicon semiconductor film formed by glow discharge, the supporting substrate must be maintained at a temperature of about 00°C to 350°C, and the higher the temperature the semiconductor film is deposited, the better the quality of the film. In order to obtain this, such a support substrate is required to have heat resistance.

Therefore, glass and metals with high heat resistance have been used for a long time, and in particular, since glass substrates have insulating properties, it is possible to arrange a plurality of semiconductor films electrically independent of each other, and it is also possible to It is most commonly used because it allows a semiconductor film to be arbitrarily wired on a substrate.

However, since the above-mentioned insulating substrate can be formed from glass, there is a risk of breakage, and for this reason, a flexible resin film made of heat-resistant resin such as polyimide resin or fluorine-based resin, which is free from the risk of breakage, has been developed as a new insulating substrate material. It has come to appear.

However, the coefficient of linear expansion of such a resin film is larger than that of the amorphous semiconductor film to be observed, and as a result of the film substrate being in an expanded state due to heating during the deposition process of the amorphous semiconductor film, the film substrate is in an expanded state due to heating. At the time of recovery, the thin amorphous semiconductor film caused an accident due to the thin amorphous semiconductor film due to the above-mentioned difference in linear expansion coefficient and shrinkage from the initial size due to heating and cooling of the film substrate 1. Furthermore, if the deposition temperature of the amorphous semiconductor film is lowered to prevent such peeling accidents, a semiconductor film of good quality cannot be obtained.

(c) Purpose of the Invention The present invention has been made in view of the above-mentioned points.-C1 The purpose is to use a flexible resin filter substrate that does not have the risk of breakage, and to prevent peeling accidents of amorphous semiconductor films or deterioration of film quality. The goal is to make it possible without having to invite it.

(d) Structure of the Invention The amorphous semiconductor device of the present invention has a structure in which an amorphous semiconductor film is deposited on a resin film substrate containing fibers.

(E) Example Figures 1 and 2 show an example in which the present invention is applied to a photovoltaic device. As shown in FIG. 3, the resin film substrate 1) has warp yarns (2a) and weft yarns (2a) made of fibers such as glass fibers, carbon fibers, metal fine fibers, etc.
It includes a woven fabric-like core material (2) which is made by alternately knitting 2b). (3a) to (3d) are a plurality of photoelectric conversion regions arranged in parallel on the above-mentioned Noil 1 and the substrate (1);
a) to (3d) (dimensions: metal electrode layers (4a) to (4d) with a film thickness of about 3,000 to 1 Am divided into each region from the film substrate (1) side, and continuously spanning each region. Amorphous semiconductor film (5) with a thickness of about 4,000 to 1000 lam
And transparent electrodes of oxidized soot, inreum oxide soot, etc. with a film thickness of about 400 to 700 A divided into each region! (6a
) to (6d) are sequentially laminated.

The amorphous semiconductor film (5) is made of hydrogenated amorphous silicon (a- 8I:H)
By adding an appropriate impurity gas, a P'IN junction is formed when viewed from the light-receiving surface side parallel to the film surface.

(7b) to (7d> are each metal electrode layer (4b) to (4d)
Extended from Ammo) 1. The first connection terminals (8a) to (8c) exposed from the fas semiconductor film (5) are the first connection terminals (7b) of the adjacent photoelectric conversion regions (3a) to (3c) on the left.
Transparent electrode layers (6a) to (6c) to be bonded to ~(7d>)
The hook-shaped second connection end -r-1 (9
) (10) is the photoelectric conversion area (3a>
(3d) metal electrode layer (4a) or transparent electrode layer (6)
d) is an external terminal extending from the external terminal.

In the photovoltaic device configured to refuse, the transparent electrode layer (6a)
- (6d) When there is an incident radiation on the amorphous semiconductor film (5), the transparent electrode layer (6a) - (6d) and the metal electrode 11 (4a) of each photoelectric conversion region (3a) - (3d) are exposed. )
A photovoltaic force is generated between ~(4d), and the photovoltaic force that declines is the first
Connection terminals (7b) to (7d) and second connection terminals (8a) to
(8c) is electrically added to the external terminal (
9) The serial output is derived from <10>.

The feature of the present invention lies in the structure of the resin film substrate (1). That is, as shown in FIGS. 2 and 3, the resin film substrate 1) provided in the present invention contains fibers, and its linear expansion coefficient is lower than that of conventional substrates that do not contain fibers. I'm here. For example, the coefficient of linear expansion of polyimide resin is about 30×10-5/'C, whereas in this example, a woven fabric made of alternating warp (2a) and weft (2b) consisting of a fibers is used. The core material (2) is impregnated with polyimide resin and thermally cured, and the coefficient of linear expansion of the no-film substrate (1) is approximately equal to that of the core material (2) and is almost unrelated to that of the polyimide resin. . Therefore, when sorter lime glass is used as the fiber forming the core material (2), the coefficient of linear expansion of the filter substrate (1) is approximately 0.8 to 1.IX 10-
5/'C,' and in the case of carbon mFa, it is 0.
'54X 10-5/°C. Furthermore, the presence of the core material (2) also improves the ability to shrink from the initial size due to heating and cooling.

A polyimide resin film substrate (1) containing such a core material (2) in the form of a woven glass fiber is commercially available from Toshi Co., Ltd. under the trade name 1 Polyimide Laminate T, IL J. Suitable for use in inventions.

In addition, in the case of the film substrate (1) having the woven fabric-like core material (2) as described above, by aligning the longitudinal direction of the amorphous semiconductor film (5) with the direction of the weft (2b), the amorphous semiconductor The expansion of the noil L and the substrate (1) relative to the film (5) can be minimized.

In addition, as for the form of the fibers contained in the film substrate (1), it is best to use the woven core (2) as in the above embodiment, but either the warp (2a) or the weft (2b).
Even if short pitch fibers are mixed therein, it can be used.

Furthermore, l: a resin film substrate (1) made of polyimide;
Since the metal electrode layer (4) is opaque, a metal electrode layer (4) is placed on the substrate (1) side.
Arrange a) to (4d) and form an amorphous semiconductor film 5)
It had a laminated structure with transparent electrode layers (6a) to (6d) on top, but if a fluororesin, which is transparent although slightly inferior in heat resistance to polyimide resin, is used as the resin film substrate (1), the metal electrode layer (4a) to (4d) and the transparent electrode layers (6a) to (6d) may be replaced with each other and the light may be guided from the film substrate (1) (R11).The am used at this time may be made of transparent glass. Naturally, it is a fiber.

Figures 4 and 5 show a well-known thin film transistor (12) in which an amorphous semiconductor film (11) is a living body using a film substrate (1) made of such a transparent fluororesin and a core material (2) of empty fibers. In the figure, (13) is a transparent electrode layer, (14) is the gate electrode of the thin film transistor (12), (15) and (16) are the source and drain electrodes, and (17) is the gate electrode of the thin film transistor (12). is a transparent insulating film such as silicon nitride that electrically isolates the amorphous semiconductor layer (11) and the gate electrode (14), and when an electric signal is applied to the gate electrode (14), the source and drain electrodes (15) and (16) are conductive and an electric signal is applied to the transparent electrode layer 13).

A film substrate (1) in which such thin film transistors (12) are integrated in a matrix and each constitutes one pixel so as to perform switching operations independently, and a transparent electrode layer completely adhered to the entire surface of the transparent resin film substrate. By sealing liquid crystal in the opposing gap between the two faces, a flexible liquid crystal panel for pixel display can be obtained.

B) Effects of the Invention As is clear from the following ten explanations, the present invention uses a flexible resin film substrate with no risk of breakage. The difference in linear expansion coefficient between the film substrate and the amorphous 1'-conductor film is suppressed and the temperature is returned to room temperature. It is possible to prevent peeling accidents of thin amorphous semiconductor films due to differences in linear expansion coefficients and shrinkage from initial dimensions, etc., and also to increase the deposition temperature of the amorphous semiconductor film, resulting in good quality. A semiconductor film can be obtained.

[Brief explanation of the drawing]

Fig. 1 is a plan view showing one embodiment of the present invention, and Fig. 2 is a plan view showing an embodiment of the present invention.
3 (A> is a plan view showing the core material of the resin film substrate used in the present invention, FIG. 4 (B) is an enlarged qi plane view thereof, and FIG. A plan view showing another embodiment of the present invention, and FIG. 5 is a sectional view taken along the line v-v' in FIG. 4. (1) - Resin film substrate, (2) - Core material, (3
a>~(3d>・Photoelectric conversion region, (5><11>
Amorphous semiconductor film, (12)...thin film transistor.

Claims (1)

[Claims] (1) An amorphous semiconductor device formed by depositing an amorphous conductive film on a resin film substrate containing fibers.